JP5768498B2 - 記憶素子、記憶装置 - Google Patents

記憶素子、記憶装置 Download PDF

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Publication number
JP5768498B2
JP5768498B2 JP2011114440A JP2011114440A JP5768498B2 JP 5768498 B2 JP5768498 B2 JP 5768498B2 JP 2011114440 A JP2011114440 A JP 2011114440A JP 2011114440 A JP2011114440 A JP 2011114440A JP 5768498 B2 JP5768498 B2 JP 5768498B2
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JP
Japan
Prior art keywords
layer
magnetization
storage
oxide
memory
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Expired - Fee Related
Application number
JP2011114440A
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English (en)
Japanese (ja)
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JP2012244031A (ja
JP2012244031A5 (enExample
Inventor
裕行 内田
裕行 内田
細見　政功
政功 細見
大森　広之
広之 大森
別所　和宏
和宏 別所
肥後　豊
豊 肥後
徹哉 浅山
徹哉 浅山
一陽 山根
一陽 山根
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011114440A priority Critical patent/JP5768498B2/ja
Priority to TW101111507A priority patent/TWI540684B/zh
Priority to US13/462,538 priority patent/US8854876B2/en
Priority to KR1020120051401A priority patent/KR101983856B1/ko
Priority to CN201210152403.9A priority patent/CN102800803B/zh
Publication of JP2012244031A publication Critical patent/JP2012244031A/ja
Publication of JP2012244031A5 publication Critical patent/JP2012244031A5/ja
Priority to US14/478,642 priority patent/US9356230B2/en
Application granted granted Critical
Publication of JP5768498B2 publication Critical patent/JP5768498B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2011114440A 2011-05-23 2011-05-23 記憶素子、記憶装置 Expired - Fee Related JP5768498B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011114440A JP5768498B2 (ja) 2011-05-23 2011-05-23 記憶素子、記憶装置
TW101111507A TWI540684B (zh) 2011-05-23 2012-03-30 Memory elements and memory devices
US13/462,538 US8854876B2 (en) 2011-05-23 2012-05-02 Perpendicular magnetization storage element and storage device
KR1020120051401A KR101983856B1 (ko) 2011-05-23 2012-05-15 기억 소자, 기억 장치
CN201210152403.9A CN102800803B (zh) 2011-05-23 2012-05-16 存储元件和存储设备
US14/478,642 US9356230B2 (en) 2011-05-23 2014-09-05 Perpendicular magnetization storage element and storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011114440A JP5768498B2 (ja) 2011-05-23 2011-05-23 記憶素子、記憶装置

Publications (3)

Publication Number Publication Date
JP2012244031A JP2012244031A (ja) 2012-12-10
JP2012244031A5 JP2012244031A5 (enExample) 2014-06-19
JP5768498B2 true JP5768498B2 (ja) 2015-08-26

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Family Applications (1)

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JP2011114440A Expired - Fee Related JP5768498B2 (ja) 2011-05-23 2011-05-23 記憶素子、記憶装置

Country Status (5)

Country Link
US (2) US8854876B2 (enExample)
JP (1) JP5768498B2 (enExample)
KR (1) KR101983856B1 (enExample)
CN (1) CN102800803B (enExample)
TW (1) TWI540684B (enExample)

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JP6832818B2 (ja) 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
KR102514506B1 (ko) 2017-12-19 2023-03-29 삼성전자주식회사 자기 메모리 장치 및 그 제조 방법
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JP2019164848A (ja) * 2018-03-19 2019-09-26 東芝メモリ株式会社 磁気記憶装置
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Also Published As

Publication number Publication date
TWI540684B (zh) 2016-07-01
US8854876B2 (en) 2014-10-07
KR20120130701A (ko) 2012-12-03
CN102800803A (zh) 2012-11-28
CN102800803B (zh) 2016-12-14
KR101983856B1 (ko) 2019-05-29
US9356230B2 (en) 2016-05-31
TW201248785A (en) 2012-12-01
JP2012244031A (ja) 2012-12-10
US20120300542A1 (en) 2012-11-29
US20140374752A1 (en) 2014-12-25

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