JP5754398B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5754398B2
JP5754398B2 JP2012053061A JP2012053061A JP5754398B2 JP 5754398 B2 JP5754398 B2 JP 5754398B2 JP 2012053061 A JP2012053061 A JP 2012053061A JP 2012053061 A JP2012053061 A JP 2012053061A JP 5754398 B2 JP5754398 B2 JP 5754398B2
Authority
JP
Japan
Prior art keywords
comb teeth
electrode
internal electrode
semiconductor device
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012053061A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013187464A5 (https=
JP2013187464A (ja
Inventor
宮本　昇
宮本　　昇
角田　義一
義一 角田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012053061A priority Critical patent/JP5754398B2/ja
Priority to DE102012224354.2A priority patent/DE102012224354B4/de
Priority to US13/733,723 priority patent/US8754462B2/en
Priority to CN201310074184.1A priority patent/CN103311191B/zh
Publication of JP2013187464A publication Critical patent/JP2013187464A/ja
Publication of JP2013187464A5 publication Critical patent/JP2013187464A5/ja
Application granted granted Critical
Publication of JP5754398B2 publication Critical patent/JP5754398B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/475—Capacitors in combination with leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2012053061A 2012-03-09 2012-03-09 半導体装置 Active JP5754398B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012053061A JP5754398B2 (ja) 2012-03-09 2012-03-09 半導体装置
DE102012224354.2A DE102012224354B4 (de) 2012-03-09 2012-12-21 Halbleitervorrichtung
US13/733,723 US8754462B2 (en) 2012-03-09 2013-01-03 Semiconductor device
CN201310074184.1A CN103311191B (zh) 2012-03-09 2013-03-08 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012053061A JP5754398B2 (ja) 2012-03-09 2012-03-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2013187464A JP2013187464A (ja) 2013-09-19
JP2013187464A5 JP2013187464A5 (https=) 2014-10-09
JP5754398B2 true JP5754398B2 (ja) 2015-07-29

Family

ID=49029640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012053061A Active JP5754398B2 (ja) 2012-03-09 2012-03-09 半導体装置

Country Status (4)

Country Link
US (1) US8754462B2 (https=)
JP (1) JP5754398B2 (https=)
CN (1) CN103311191B (https=)
DE (1) DE102012224354B4 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012005299T5 (de) * 2012-03-19 2014-09-04 Mitsubishi Electric Corporation Halbleitervorrichtung und Halbleitersystem
JP6169250B2 (ja) * 2014-03-06 2017-07-26 三菱電機株式会社 電力用半導体装置
JP7365405B2 (ja) * 2019-04-24 2023-10-19 ローム株式会社 半導体装置
CN113748509B (zh) * 2019-04-24 2024-04-30 罗姆股份有限公司 半导体装置
JP2021182575A (ja) * 2020-05-18 2021-11-25 現代自動車株式会社Hyundai Motor Company 半導体装置内部スナバ回路接続構造及びこれを用いたパワーモジュール構造
US11538748B2 (en) * 2020-06-04 2022-12-27 Mediatek Singapore Pte. Ltd. Semiconductor device with capacitor element
JP6841367B1 (ja) * 2020-07-14 2021-03-10 富士電機株式会社 半導体モジュール、電力変換装置及び半導体モジュールの製造方法
KR20230123346A (ko) * 2022-02-16 2023-08-23 삼성전자주식회사 집적 회로
DE102022211040A1 (de) 2022-10-19 2024-04-25 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleitermodul

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299584A (ja) 1992-02-21 1993-11-12 Toshiba Corp 薄膜容量素子及び半導体記憶装置
JPH06140446A (ja) 1992-07-21 1994-05-20 Hitachi Ltd 半導体装置及びそれを用いた電子装置
JP3340003B2 (ja) * 1995-11-20 2002-10-28 京セラ株式会社 多層配線基板及び半導体素子収納用パッケージ
JPH10174424A (ja) 1996-10-07 1998-06-26 Toshiba Corp 電力変換装置
JP2000058372A (ja) 1998-08-04 2000-02-25 Toshiba Corp セラミックコンデンサ実装構造
JP2000092847A (ja) 1998-09-14 2000-03-31 Denso Corp コンデンサ付き半導体モジュール装置
JP3553849B2 (ja) 2000-03-07 2004-08-11 富士電機デバイステクノロジー株式会社 半導体装置及びその製造方法
JP4044265B2 (ja) 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
US6558169B2 (en) * 2001-03-29 2003-05-06 Intel Corporation Shunt power connection for an integrated circuit package
JP4060657B2 (ja) * 2002-07-18 2008-03-12 Ｎｅｃトーキン株式会社 固体電解コンデンサとその製造方法
JP2004350400A (ja) 2003-05-22 2004-12-09 Hitachi Ltd 電力変換装置
DE10345247B4 (de) 2003-09-29 2007-10-04 Infineon Technologies Ag Verwendung von Leiterbahnen als Krallkörper
JP2005341643A (ja) * 2004-05-24 2005-12-08 Toshiba Corp 電力変換器のブスバー装置
JP2006174566A (ja) * 2004-12-14 2006-06-29 Toyota Motor Corp 電流制御素子、昇圧装置およびインバータ装置
JP2006222347A (ja) * 2005-02-14 2006-08-24 Toyota Motor Corp 半導体モジュールと半導体モジュールの製造方法
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
KR100876247B1 (ko) * 2006-10-19 2008-12-26 삼성에스디아이 주식회사 이차전지 및 그 제조방법
JP5061717B2 (ja) 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
JP5151338B2 (ja) * 2007-09-14 2013-02-27 株式会社Ｉｈｉ コンデンサ内蔵絶縁型半導体パワーモジュール
US8053865B2 (en) * 2008-03-10 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOM capacitors integrated with air-gaps
JP5169353B2 (ja) * 2008-03-18 2013-03-27 三菱電機株式会社 パワーモジュール
JP5332753B2 (ja) 2009-03-10 2013-11-06 日産自動車株式会社 機電一体型駆動装置
JP5469584B2 (ja) 2010-10-28 2014-04-16 株式会社日立製作所 バスバ間内蔵コンデンサ、電力機器及び電力変換装置

Also Published As

Publication number Publication date
CN103311191B (zh) 2016-08-10
US20130234291A1 (en) 2013-09-12
US8754462B2 (en) 2014-06-17
JP2013187464A (ja) 2013-09-19
DE102012224354B4 (de) 2021-09-30
DE102012224354A1 (de) 2013-09-12
CN103311191A (zh) 2013-09-18

Similar Documents

Publication Publication Date Title
JP5754398B2 (ja) 半導体装置
JP6233507B2 (ja) パワー半導体モジュールおよび複合モジュール
JP6230660B2 (ja) 電力用半導体モジュール
US9871463B2 (en) Power module
CN105814686B (zh) 半导体装置
JP5678884B2 (ja) 電力変換装置
EP3104412B1 (en) Power semiconductor module
US8373197B2 (en) Circuit device
JP2007073743A (ja) 半導体装置
WO2021029150A1 (ja) 半導体装置
IT201800004209A1 (it) Dispositivo semiconduttore di potenza con relativo incapsulamento e corrispondente procedimento di fabbricazione
WO2015072105A1 (ja) パワーモジュール
JP7155748B2 (ja) 半導体装置
JP2017017109A (ja) 半導体装置
JP7118204B1 (ja) 半導体装置
CN113314479A (zh) 半导体电路
CN105633024A (zh) 半导体装置
JP5151338B2 (ja) コンデンサ内蔵絶縁型半導体パワーモジュール
JP5619232B2 (ja) 半導体装置および電極用部材の製造方法
WO2021015050A1 (ja) 電気回路装置
JP5485833B2 (ja) 半導体装置、電極用部材および電極用部材の製造方法
WO2025115471A1 (ja) 電力変換装置
WO2024024067A1 (ja) 電力変換装置、電力変換装置の製造方法
JP2016214012A (ja) 電力変換装置
WO2017110540A1 (ja) 回路構成体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140430

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140430

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140821

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150428

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150511

R150 Certificate of patent or registration of utility model

Ref document number: 5754398

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250