CN103311191B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN103311191B
CN103311191B CN201310074184.1A CN201310074184A CN103311191B CN 103311191 B CN103311191 B CN 103311191B CN 201310074184 A CN201310074184 A CN 201310074184A CN 103311191 B CN103311191 B CN 103311191B
Authority
CN
China
Prior art keywords
comb
tooth portions
internal electrode
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310074184.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN103311191A (zh
Inventor
宫本升
角田义
角田义一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103311191A publication Critical patent/CN103311191A/zh
Application granted granted Critical
Publication of CN103311191B publication Critical patent/CN103311191B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/475—Capacitors in combination with leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201310074184.1A 2012-03-09 2013-03-08 半导体装置 Active CN103311191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012053061A JP5754398B2 (ja) 2012-03-09 2012-03-09 半導体装置
JP2012-053061 2012-03-09

Publications (2)

Publication Number Publication Date
CN103311191A CN103311191A (zh) 2013-09-18
CN103311191B true CN103311191B (zh) 2016-08-10

Family

ID=49029640

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310074184.1A Active CN103311191B (zh) 2012-03-09 2013-03-08 半导体装置

Country Status (4)

Country Link
US (1) US8754462B2 (https=)
JP (1) JP5754398B2 (https=)
CN (1) CN103311191B (https=)
DE (1) DE102012224354B4 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012005299T5 (de) * 2012-03-19 2014-09-04 Mitsubishi Electric Corporation Halbleitervorrichtung und Halbleitersystem
JP6169250B2 (ja) * 2014-03-06 2017-07-26 三菱電機株式会社 電力用半導体装置
JP7365405B2 (ja) * 2019-04-24 2023-10-19 ローム株式会社 半導体装置
CN113748509B (zh) * 2019-04-24 2024-04-30 罗姆股份有限公司 半导体装置
JP2021182575A (ja) * 2020-05-18 2021-11-25 現代自動車株式会社Hyundai Motor Company 半導体装置内部スナバ回路接続構造及びこれを用いたパワーモジュール構造
US11538748B2 (en) * 2020-06-04 2022-12-27 Mediatek Singapore Pte. Ltd. Semiconductor device with capacitor element
JP6841367B1 (ja) * 2020-07-14 2021-03-10 富士電機株式会社 半導体モジュール、電力変換装置及び半導体モジュールの製造方法
KR20230123346A (ko) * 2022-02-16 2023-08-23 삼성전자주식회사 집적 회로
DE102022211040A1 (de) 2022-10-19 2024-04-25 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleitermodul

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1511435A (zh) * 2001-03-29 2004-07-07 ض� 用于集成电路封装的分流连接器

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299584A (ja) 1992-02-21 1993-11-12 Toshiba Corp 薄膜容量素子及び半導体記憶装置
JPH06140446A (ja) 1992-07-21 1994-05-20 Hitachi Ltd 半導体装置及びそれを用いた電子装置
JP3340003B2 (ja) * 1995-11-20 2002-10-28 京セラ株式会社 多層配線基板及び半導体素子収納用パッケージ
JPH10174424A (ja) 1996-10-07 1998-06-26 Toshiba Corp 電力変換装置
JP2000058372A (ja) 1998-08-04 2000-02-25 Toshiba Corp セラミックコンデンサ実装構造
JP2000092847A (ja) 1998-09-14 2000-03-31 Denso Corp コンデンサ付き半導体モジュール装置
JP3553849B2 (ja) 2000-03-07 2004-08-11 富士電機デバイステクノロジー株式会社 半導体装置及びその製造方法
JP4044265B2 (ja) 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
JP4060657B2 (ja) * 2002-07-18 2008-03-12 Ｎｅｃトーキン株式会社 固体電解コンデンサとその製造方法
JP2004350400A (ja) 2003-05-22 2004-12-09 Hitachi Ltd 電力変換装置
DE10345247B4 (de) 2003-09-29 2007-10-04 Infineon Technologies Ag Verwendung von Leiterbahnen als Krallkörper
JP2005341643A (ja) * 2004-05-24 2005-12-08 Toshiba Corp 電力変換器のブスバー装置
JP2006174566A (ja) * 2004-12-14 2006-06-29 Toyota Motor Corp 電流制御素子、昇圧装置およびインバータ装置
JP2006222347A (ja) * 2005-02-14 2006-08-24 Toyota Motor Corp 半導体モジュールと半導体モジュールの製造方法
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
KR100876247B1 (ko) * 2006-10-19 2008-12-26 삼성에스디아이 주식회사 이차전지 및 그 제조방법
JP5061717B2 (ja) 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
JP5151338B2 (ja) * 2007-09-14 2013-02-27 株式会社Ｉｈｉ コンデンサ内蔵絶縁型半導体パワーモジュール
US8053865B2 (en) * 2008-03-10 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOM capacitors integrated with air-gaps
JP5169353B2 (ja) * 2008-03-18 2013-03-27 三菱電機株式会社 パワーモジュール
JP5332753B2 (ja) 2009-03-10 2013-11-06 日産自動車株式会社 機電一体型駆動装置
JP5469584B2 (ja) 2010-10-28 2014-04-16 株式会社日立製作所 バスバ間内蔵コンデンサ、電力機器及び電力変換装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1511435A (zh) * 2001-03-29 2004-07-07 ض� 用于集成电路封装的分流连接器

Also Published As

Publication number Publication date
US20130234291A1 (en) 2013-09-12
US8754462B2 (en) 2014-06-17
JP2013187464A (ja) 2013-09-19
DE102012224354B4 (de) 2021-09-30
DE102012224354A1 (de) 2013-09-12
CN103311191A (zh) 2013-09-18
JP5754398B2 (ja) 2015-07-29

Similar Documents

Publication Publication Date Title
CN103311191B (zh) 半导体装置
CN107112294B (zh) 半导体装置以及功率模块
CN105765716B (zh) 功率半导体模块和复合模块
US7772709B2 (en) Resin sealed semiconductor device and manufacturing method therefor
US8373197B2 (en) Circuit device
US9871463B2 (en) Power module
CN106252312B (zh) 具有堆叠端子的半导体器件
CN102484109B (zh) 电力变换装置
JP6813259B2 (ja) 半導体装置
CN110914975B (zh) 功率半导体模块
US20260020201A1 (en) Power module connection capacitor and power conversion device provided with same
CN209896058U (zh) 功率半导体器件和封装件
US10217690B2 (en) Semiconductor module that have multiple paths for heat dissipation
CN102460694A (zh) 电力变换装置
WO2015072105A1 (ja) パワーモジュール
US10903138B2 (en) Semiconductor device and method of manufacturing the same
CN113366634A (zh) 半导体装置
CN111354710B (zh) 半导体装置及其制造方法
CN113261095B (zh) 半导体装置、半导体装置的制造方法及电力转换装置
CN115206919A (zh) 半导体装置
CN113314479A (zh) 半导体电路
CN216145614U (zh) 智能功率模块
WO2021015050A1 (ja) 電気回路装置
JP2003298009A (ja) パワーモジュール及びそれを用いた電力変換装置
EP4086953B1 (en) Packaged power semiconductor device and power converter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant