JP5748188B2 - 半導体装置 - Google Patents
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- JP5748188B2 JP5748188B2 JP2009225617A JP2009225617A JP5748188B2 JP 5748188 B2 JP5748188 B2 JP 5748188B2 JP 2009225617 A JP2009225617 A JP 2009225617A JP 2009225617 A JP2009225617 A JP 2009225617A JP 5748188 B2 JP5748188 B2 JP 5748188B2
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- 239000004065 semiconductor Substances 0.000 title claims description 168
- 230000015556 catabolic process Effects 0.000 claims description 146
- 239000010410 layer Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 56
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 20
- 239000002344 surface layer Substances 0.000 claims description 17
- 230000007547 defect Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 description 84
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- 238000002955 isolation Methods 0.000 description 44
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
実施の形態1にかかる逆阻止IGBT(Insulated Gate Bipolar Transistor)は、n型(第1導電型)のドリフト領域からなる半導体基板上に、活性領域と、活性領域の外側に設けられた耐圧接合終端領域と、耐圧接合終端領域の外周端部に設けられたp型(第2導電型)の分離領域を備えている。つまり、逆阻止IGBTは、活性領域のエミッタ領域と分離領域との間に、耐圧接合終端領域を設けた構成となっている。耐圧接合終端領域は、半導体装置を構成するpn接合表面の電界強度を緩和し所望の耐圧を実現する。耐圧接合終端領域は、耐圧構造領域に相当する。ドリフト領域は、第1半導体領域に相当する。分離領域は、第2半導体領域に相当する。また、このような逆阻止IGBTは、たとえば600V程度または1200V程度の保証耐圧を有する。
実施の形態1に示す逆阻止IGBTにおいて、電子線を照射した半導体基板を用いてもよい。また、半導体基板に電子線を照射した後に、半導体基板に熱処理をおこなってもよい。それ以外の構成は、実施の形態1に示す逆阻止IGBT(図1参照)と同様である。
図6は、実施の形態3にかかる逆阻止IGBTの耐圧接合終端領域を示す断面図である。図6に示すように、実施の形態1に示す逆阻止IGBTの逆方向耐圧構造領域の耐圧構造(図1参照)を、順方向に電圧が印加されたときに主に順方向耐圧を実現する順方向耐圧構造領域に適用してもよい。
図8は、実施の形態4にかかる逆阻止IGBTの耐圧接合終端領域を示す断面図である。図8に示すように、実施の形態3に示す逆阻止IGBT(図6参照)の活性領域100の構造を、トレンチゲート構造のIGBTとしてもよい。
図9は、実施の形態5にかかる逆阻止IGBTの耐圧接合終端領域を示す断面図である。図9に示すように、実施の形態3に示す逆阻止IGBT(図6参照)の第2内周FP部、第2内周FP部に接する内周FLRに代えて、リサーフ(RESURF:ReduceSuerface Field)構造からなるドリフト領域よりも低い不純物濃度を有するp型領域(以下、リサーフ領域とする)を設けてもよい。
2 チャネル領域
3 エミッタ領域
4 ボディ領域
6 ゲート絶縁膜
7 ゲート電極
8 層間絶縁膜
9 エミッタ電極
10 コレクタ領域
11 コレクタ電極
12 分離領域
13 等電位フィールドプレート(FP)
31 チャネルストッパー領域
32 中間フィールドプレート(FP)
41 外周フィールドリミッティングリング(FLR)
42 外周フィールドプレート
43 第1外周フィールドプレート部
44 第2外周フィールドプレート部
100 活性領域
200 耐圧接合終端領域
220 順方向耐圧構造領域
230 中間部
240 逆方向耐圧構造領域
Claims (7)
- 第1導電型の第1半導体領域からなる半導体基板上に、活性領域と、当該活性領域の外側に設けられた耐圧構造領域を設けた半導体装置において、
前記半導体基板の裏面に設けられた第2導電型のコレクタ領域と、
前記耐圧構造領域の外周を囲み、前記半導体基板のおもて面から裏面まで貫通し、前記コレクタ領域に接するように設けられた第2導電型の第2半導体領域と、
前記耐圧構造領域の前記半導体基板のおもて面の表面層に、前記活性領域を囲むように、設けられた複数の第2導電型の第3半導体領域と、
前記半導体基板のおもて面の表面に選択的に設けられた層間絶縁膜と、
前記第3半導体領域に接し、前記層間絶縁膜の上に設けられた複数の導電膜と、
前記耐圧構造領域の前記半導体基板のおもて面の表面層に設けられ、逆電圧が印加された際に前記第2半導体領域から前記活性領域に伸びる空乏層の拡がりを抑制する第2導電型の第4半導体領域と、
を備え、
前記導電膜のうち、第1導電膜は、前記第2半導体領域と前記第4半導体領域の間に設けられた前記第3半導体領域のうち、前記第2半導体領域から前記第4半導体領域側に向かって伸びる空乏層によって空乏化される最も当該第2半導体領域から離れた前記第3半導体領域に接し、かつ、前記第1導電膜の前記活性領域側の端部は、当該第1導電膜が接する当該第3半導体領域の当該活性領域側の端部よりも当該活性領域側に張り出すように設けられており、
前記導電膜のうち、第2導電膜は、前記第1導電膜が接する前記第3半導体領域よりも前記第2半導体領域側に設けられた前記第3半導体領域に接し、かつ、前記第2導電膜の前記第2半導体領域側の端部は、当該第2導電膜が接する当該第3半導体領域の当該第2半導体領域側の端部よりも、当該第2半導体領域側に張り出すように設けられており、
前記第4半導体領域には、該第4半導体領域の端部から前記活性領域側と前記第2半導体領域側に等しく張り出す第3導電膜が接していることを特徴とする半導体装置。 - 前記耐圧構造領域の、前記第4半導体領域と前記第2半導体領域との間は、逆方向耐圧を確保するための逆方向耐圧構造領域であり、
前記耐圧構造領域の、前記第4半導体領域と前記活性領域との間は、順方向耐圧を確保するための順方向耐圧構造領域であることを特徴とする請求項1に記載の半導体装置。 - 前記第2導電膜の数は、前記第1導電膜の数より多いことを特徴とする請求項1または2に記載の半導体装置。
- 前記第1導電膜は1つであることを特徴とする請求項3に記載の半導体装置。
- 20kGy以上の電子線が照射され結晶欠陥が導入された後に熱処理された前記半導体基板を備えることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記第3半導体領域は、前記第2半導体領域から離れるほど、隣り合う当該第3半導体領域との間隔が広くなるように設けられていることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記第3半導体領域と前記第4半導体領域とが同じ深さであることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2009225617A JP5748188B2 (ja) | 2009-09-29 | 2009-09-29 | 半導体装置 |
CN201010507863.XA CN102034856B (zh) | 2009-09-29 | 2010-09-28 | 半导体器件 |
US12/892,676 US8558342B2 (en) | 2009-09-29 | 2010-09-28 | Semiconductor device |
DE102010046770A DE102010046770A1 (de) | 2009-09-29 | 2010-09-28 | Halbleiteranordnung |
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JP2009225617A JP5748188B2 (ja) | 2009-09-29 | 2009-09-29 | 半導体装置 |
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JP5748188B2 true JP5748188B2 (ja) | 2015-07-15 |
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JP (1) | JP5748188B2 (ja) |
CN (1) | CN102034856B (ja) |
DE (1) | DE102010046770A1 (ja) |
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WO2010067430A1 (ja) * | 2008-12-10 | 2010-06-17 | トヨタ自動車株式会社 | 半導体装置 |
JP5218474B2 (ja) * | 2010-05-27 | 2013-06-26 | 富士電機株式会社 | 半導体装置 |
JP5866827B2 (ja) * | 2011-06-30 | 2016-02-24 | 富士電機株式会社 | 逆阻止型絶縁ゲート型バイポーラトランジスタの製造方法 |
JP5716591B2 (ja) * | 2011-07-26 | 2015-05-13 | 三菱電機株式会社 | 半導体装置 |
US9385188B2 (en) | 2012-01-12 | 2016-07-05 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device with termination region having floating electrodes in an insulating layer |
CN103855200B (zh) * | 2012-11-30 | 2016-11-23 | 上海联星电子有限公司 | 一种半导体器件及其制作方法 |
CN103887331B (zh) * | 2012-12-21 | 2019-04-16 | 上海矽睿科技有限公司 | 高压igbt器件的vld终端及其制备方法 |
WO2014112057A1 (ja) * | 2013-01-16 | 2014-07-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN103746002B (zh) * | 2013-12-17 | 2016-04-20 | 西安理工大学 | 一种台阶形沟槽-场限环复合终端结构 |
JP6496992B2 (ja) * | 2014-07-22 | 2019-04-10 | 富士電機株式会社 | 半導体装置 |
WO2017002619A1 (ja) * | 2015-06-30 | 2017-01-05 | 富士電機株式会社 | 半導体装置及びその製造方法 |
US9741570B1 (en) | 2016-07-29 | 2017-08-22 | Infineon Technologies Austria Ag | Method of manufacturing a reverse-blocking IGBT |
DE102016120300A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Austria Ag | Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung |
JP6854654B2 (ja) * | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
CN107742642A (zh) * | 2017-09-22 | 2018-02-27 | 广东美的制冷设备有限公司 | 绝缘栅双极晶体管及其终端结构的制作方法、ipm模块以及空调器 |
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JP2950025B2 (ja) * | 1992-07-02 | 1999-09-20 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
US5548150A (en) * | 1993-03-10 | 1996-08-20 | Kabushiki Kaisha Toshiba | Field effect transistor |
JP3111827B2 (ja) | 1994-09-20 | 2000-11-27 | 株式会社日立製作所 | 半導体装置及びそれを使った電力変換装置 |
JPH1074959A (ja) * | 1996-07-03 | 1998-03-17 | Toshiba Corp | 電力用半導体素子 |
JP5162804B2 (ja) * | 2001-09-12 | 2013-03-13 | 富士電機株式会社 | 半導体装置 |
JP4899290B2 (ja) * | 2003-04-10 | 2012-03-21 | 富士電機株式会社 | 逆阻止型半導体装置 |
JP4269863B2 (ja) * | 2003-09-25 | 2009-05-27 | 富士電機デバイステクノロジー株式会社 | 双方向高耐圧プレーナ型半導体装置 |
JP4930894B2 (ja) * | 2005-05-13 | 2012-05-16 | サンケン電気株式会社 | 半導体装置 |
JP4367508B2 (ja) * | 2007-03-13 | 2009-11-18 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP4916348B2 (ja) * | 2007-03-14 | 2012-04-11 | 株式会社鎌倉製作所 | 排気用ルーフファン用シャッター装置 |
JP5358963B2 (ja) * | 2008-02-04 | 2013-12-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5374883B2 (ja) * | 2008-02-08 | 2013-12-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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- 2010-09-28 CN CN201010507863.XA patent/CN102034856B/zh active Active
- 2010-09-28 DE DE102010046770A patent/DE102010046770A1/de not_active Withdrawn
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CN102034856B (zh) | 2014-09-03 |
JP2011077202A (ja) | 2011-04-14 |
US8558342B2 (en) | 2013-10-15 |
DE102010046770A1 (de) | 2011-03-31 |
US20110073903A1 (en) | 2011-03-31 |
CN102034856A (zh) | 2011-04-27 |
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