JP4992269B2 - 電力半導体装置 - Google Patents
電力半導体装置 Download PDFInfo
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- JP4992269B2 JP4992269B2 JP2006092743A JP2006092743A JP4992269B2 JP 4992269 B2 JP4992269 B2 JP 4992269B2 JP 2006092743 A JP2006092743 A JP 2006092743A JP 2006092743 A JP2006092743 A JP 2006092743A JP 4992269 B2 JP4992269 B2 JP 4992269B2
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 description 24
- 239000012535 impurity Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Description
Claims (1)
- 一対の主表面を持つ第1導電型の第1の半導体領域と、一方の主表面より第1の半導体領域内に延びる第2導電型の第2の半導体領域と、第2の半導体領域を囲むように形成され、一方の主表面より第1の半導体領域内に延びる第2導電型の複数の第3の半導体領域と、第3の半導体領域を囲むように形成され、一方の主表面より第1の半導体領域に延びる第1導電型の第4の半導体領域と、
他方の主表面に形成された第1の主電極と、第2の半導体領域に低抵抗接触し、絶縁膜を介して形成される第2の主電極と、第3の半導体領域に低抵抗接触し、第2の半導体領域の側及びその反対側に絶縁膜を介して形成される複数の補助電極と、を有し、
複数の前記第3の半導体領域の間および直下において、複数の前記第3の半導体領域を覆うように設けられ、拡散長が、複数の前記第3の半導体領域の拡散深さより深い第1導電型の第5の半導体領域を有することを特徴とする半導体装置。
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JP2006092743A JP4992269B2 (ja) | 2006-03-30 | 2006-03-30 | 電力半導体装置 |
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JP2006092743A JP4992269B2 (ja) | 2006-03-30 | 2006-03-30 | 電力半導体装置 |
Publications (2)
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JP2007266520A JP2007266520A (ja) | 2007-10-11 |
JP4992269B2 true JP4992269B2 (ja) | 2012-08-08 |
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JP2006092743A Active JP4992269B2 (ja) | 2006-03-30 | 2006-03-30 | 電力半導体装置 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011066171A (ja) * | 2009-09-17 | 2011-03-31 | Hitachi Ltd | 半導体装置 |
JP2012004466A (ja) * | 2010-06-21 | 2012-01-05 | Hitachi Ltd | 半導体装置 |
JP5641055B2 (ja) * | 2010-12-17 | 2014-12-17 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2013038329A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置 |
JP2016035989A (ja) | 2014-08-04 | 2016-03-17 | 株式会社東芝 | 半導体装置 |
WO2016147352A1 (ja) * | 2015-03-18 | 2016-09-22 | 三菱電機株式会社 | 電力用半導体装置 |
CN108922888B (zh) * | 2018-08-31 | 2023-06-06 | 江苏丽隽功率半导体有限公司 | 一种功率器件的终端结构及其制作方法 |
JP7150539B2 (ja) * | 2018-09-15 | 2022-10-11 | 株式会社東芝 | 半導体装置 |
US11450734B2 (en) | 2019-06-17 | 2022-09-20 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method for semiconductor device |
US11257943B2 (en) | 2019-06-17 | 2022-02-22 | Fuji Electric Co., Ltd. | Semiconductor device |
EP4207306A4 (en) * | 2020-09-30 | 2023-10-18 | Huawei Technologies Co., Ltd. | CONNECTION STRUCTURE OF A POWER DEVICE, PRODUCTION METHOD THEREOF AND POWER DEVICE |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5032878A (en) * | 1990-01-02 | 1991-07-16 | Motorola, Inc. | High voltage planar edge termination using a punch-through retarding implant |
JPH03222475A (ja) * | 1990-01-29 | 1991-10-01 | Matsushita Electron Corp | 半導体装置 |
JP3111827B2 (ja) * | 1994-09-20 | 2000-11-27 | 株式会社日立製作所 | 半導体装置及びそれを使った電力変換装置 |
JPH0922997A (ja) * | 1995-07-04 | 1997-01-21 | Toyota Autom Loom Works Ltd | 半導体装置 |
JPH10270370A (ja) * | 1997-03-26 | 1998-10-09 | Sharp Corp | 不純物の拡散方法ならびに半導体装置およびその製造方法 |
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