JP5737547B2 - 炭化ケイ素被覆黒鉛粒子の製造方法及び炭化ケイ素被覆黒鉛粒子 - Google Patents
炭化ケイ素被覆黒鉛粒子の製造方法及び炭化ケイ素被覆黒鉛粒子 Download PDFInfo
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- JP5737547B2 JP5737547B2 JP2009205041A JP2009205041A JP5737547B2 JP 5737547 B2 JP5737547 B2 JP 5737547B2 JP 2009205041 A JP2009205041 A JP 2009205041A JP 2009205041 A JP2009205041 A JP 2009205041A JP 5737547 B2 JP5737547 B2 JP 5737547B2
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- silicon carbide
- graphite particles
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- carbon
- coated graphite
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 209
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 204
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 202
- 239000002245 particle Substances 0.000 title claims description 104
- 229910002804 graphite Inorganic materials 0.000 title claims description 95
- 239000010439 graphite Substances 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000010304 firing Methods 0.000 claims description 6
- 230000004580 weight loss Effects 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 description 105
- 239000002131 composite material Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 32
- 239000011248 coating agent Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 23
- 238000001878 scanning electron micrograph Methods 0.000 description 22
- 238000005524 ceramic coating Methods 0.000 description 21
- 239000011247 coating layer Substances 0.000 description 21
- 238000005245 sintering Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000003575 carbonaceous material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- -1 silicon carbide carbon compound Chemical class 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009205041A JP5737547B2 (ja) | 2009-09-04 | 2009-09-04 | 炭化ケイ素被覆黒鉛粒子の製造方法及び炭化ケイ素被覆黒鉛粒子 |
| EP20100813705 EP2474514A4 (en) | 2009-09-04 | 2010-09-01 | PROCESS FOR PRODUCING A SILICIUMCARBIDBESCHICHTETEN CARBON BASED MATERIALS, SILICIUMCARBIDBESCHICHTETES CARBON BASE MATERIAL SINTERED (silicon carbide) CARBON COMPLEX, CERAMIC COATED SINTERED (silicon carbide) CARBON COMPLEX AND METHOD FOR PRODUCING THE SINTERED (silicon carbide) CARBON COMPLEX |
| US13/392,593 US9085493B2 (en) | 2009-09-04 | 2010-09-01 | Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex |
| RU2012112935/03A RU2012112935A (ru) | 2009-09-04 | 2010-09-01 | Способ получения углеродного материала с карбидокремниевым покрытием, углеродный материал с карбидокремниевым покрытием, спеченный комплекс карбид кремния/углерод, спеченный комплекс карбид кремния/углерод с керамическим покрытием и способ получения спеченного комплекса карбид кремния/углерод |
| CN201080039227.7A CN102482165B (zh) | 2009-09-04 | 2010-09-01 | 碳化硅包覆碳基材的制造方法、碳化硅包覆碳基材、碳化硅碳复合烧结体、陶瓷包覆碳化硅碳复合烧结体以及碳化硅碳复合烧结体的制造方法 |
| KR1020127003033A KR20120076340A (ko) | 2009-09-04 | 2010-09-01 | 탄화규소 피복 탄소 기재의 제조 방법 및 탄화규소 피복 탄소 기재 및 탄화규소 탄소 복합 소결체, 세라믹스 피복 탄화규소 탄소 복합 소결체 및 탄화규소 탄소 복합 소결체의 제조 방법 |
| PCT/JP2010/064871 WO2011027756A1 (ja) | 2009-09-04 | 2010-09-01 | 炭化ケイ素被覆炭素基材の製造方法及び炭化ケイ素被覆炭素基材並びに炭化ケイ素炭素複合焼結体、セラミックス被覆炭化ケイ素炭素複合焼結体及び炭化ケイ素炭素複合焼結体の製造方法 |
| TW099129624A TWI477443B (zh) | 2009-09-04 | 2010-09-02 | 被覆碳化矽之碳基材之製造方法以及被覆碳化矽之碳基材與碳化矽碳複合燒結體、被覆陶瓷之碳化矽碳複合燒結體和碳化矽碳複合燒結體之製造方法 |
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| JP5678332B2 (ja) * | 2009-09-04 | 2015-03-04 | 東洋炭素株式会社 | セラミックス炭素複合材及びその製造方法並びにセラミックス被覆セラミックス炭素複合材及びその製造方法 |
| US9283693B2 (en) * | 2010-07-30 | 2016-03-15 | Lg Innotek Co., Ltd. | Hot press sintering apparatus and press element |
| JP5748564B2 (ja) | 2011-05-27 | 2015-07-15 | 東洋炭素株式会社 | 炭化ケイ素−炭素複合材の製造方法 |
| JP5748586B2 (ja) * | 2011-06-07 | 2015-07-15 | 東洋炭素株式会社 | 炭素−炭化ケイ素複合材 |
| KR101911432B1 (ko) | 2012-06-18 | 2019-01-04 | 삼성전자주식회사 | 복합 담체, 이의 제조 방법, 이를 포함한 전극 촉매 및 상기 전극 촉매를 포함한 막-전극 접합체 및 연료 전지 |
| WO2013190662A1 (ja) * | 2012-06-20 | 2013-12-27 | 東洋炭素株式会社 | 炭素-炭化ケイ素複合材 |
| WO2014081005A1 (ja) * | 2012-11-26 | 2014-05-30 | 東洋炭素株式会社 | セラミックス炭素複合材の特性制御方法並びにセラミックス炭素複合材 |
| US9636122B2 (en) | 2013-03-15 | 2017-05-02 | Depuy Ireland Unlimited Company | Femoral orthopaedic instrument assembly for setting offset |
| DE102015111453B4 (de) * | 2015-07-15 | 2022-03-10 | Infineon Technologies Ag | Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements |
| JP7333172B2 (ja) | 2015-08-20 | 2023-08-24 | インテグリス・インコーポレーテッド | 炭化ケイ素/黒鉛複合材並びにそれを含む物品及び組立品 |
| FR3042993A1 (fr) | 2015-11-04 | 2017-05-05 | Commissariat Energie Atomique | Matrice et piston d'appareil de sps, appareil de sps les comprenant, et procede de frittage, densification ou assemblage sous une atmosphere oxydante utilisant cet appareil |
| EP4187191B1 (de) * | 2016-10-13 | 2024-05-22 | Airbus Defence and Space GmbH | Verbundpulver zur generativen fertigung, verfahren zur herstellung eines verbundpulvers |
| JP7093264B2 (ja) * | 2018-08-10 | 2022-06-29 | イビデン株式会社 | 反応装置 |
| CA3147593A1 (en) * | 2019-07-17 | 2021-01-21 | Phillips 66 Company | Electrode particles suitable for batteries |
| CN115417678B (zh) * | 2022-11-07 | 2023-03-24 | 湖南联合半导体科技有限公司 | 一种低温化学气相反应法制备SiC涂层的方法 |
| CN116143542A (zh) * | 2022-12-08 | 2023-05-23 | 中国科学院上海硅酸盐研究所 | 一种金刚石结合碳化硅复相陶瓷的制备方法和应用 |
| CN117577802B (zh) * | 2023-11-16 | 2025-12-09 | 宁德新能源科技有限公司 | 负极活性材料、负极极片、二次电池和电子设备 |
| KR102845759B1 (ko) * | 2024-01-24 | 2025-08-13 | 한국재료연구원 | 열방호 소재용 금속 탄화물 계면층 제조방법 및 이를 이용한 열방호 소재 |
| CN118684521B (zh) * | 2024-08-27 | 2025-02-25 | 浙江晶诚新材料有限公司 | 碳化硅涂层石墨基座及其制备方法与应用 |
| CN118684522B (zh) * | 2024-08-27 | 2025-05-13 | 浙江晶诚新材料有限公司 | 带有嵌入式碳化硅涂层的石墨基座及其制备方法与应用 |
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- 2010-09-01 WO PCT/JP2010/064871 patent/WO2011027756A1/ja not_active Ceased
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| EP2474514A1 (en) | 2012-07-11 |
| CN102482165A (zh) | 2012-05-30 |
| EP2474514A4 (en) | 2013-05-29 |
| CN102482165B (zh) | 2014-01-22 |
| KR20120076340A (ko) | 2012-07-09 |
| TWI477443B (zh) | 2015-03-21 |
| RU2012112935A (ru) | 2013-10-10 |
| WO2011027756A1 (ja) | 2011-03-10 |
| US20120156479A1 (en) | 2012-06-21 |
| US9085493B2 (en) | 2015-07-21 |
| JP2011051866A (ja) | 2011-03-17 |
| TW201113220A (en) | 2011-04-16 |
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