JP2011051866A - 炭化ケイ素被覆炭素基材の製造方法及び炭化ケイ素被覆炭素基材並びに炭化ケイ素炭素複合焼結体、セラミックス被覆炭化ケイ素炭素複合焼結体及び炭化ケイ素炭素複合焼結体の製造方法 - Google Patents
炭化ケイ素被覆炭素基材の製造方法及び炭化ケイ素被覆炭素基材並びに炭化ケイ素炭素複合焼結体、セラミックス被覆炭化ケイ素炭素複合焼結体及び炭化ケイ素炭素複合焼結体の製造方法 Download PDFInfo
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Abstract
【解決手段】未結合手を有しないSP2炭素構造からなるベース部と、未結合手を有するSP2炭素構造からなるエッジ部とを表面に有する炭素基材を準備する工程と、温度1400〜1600℃、圧力1〜150Paの雰囲気中で、炭素基材の表面と、SiOガスとを反応させて炭化ケイ素を形成することにより、炭化ケイ素で被覆された炭素基材を製造する工程とを備えることを特徴としている。
【選択図】図1
Description
図1は、炭化ケイ素被覆処理に用いた坩堝内の配置状態を示す模式的断面図である。図1に示すように、黒鉛製坩堝1内に、カーボンシート2を配置し、その上にSiO源として、SiO粉末3を配置した。SiO粉末3の上に、カーボンフェルト4を配置し、カーボンフェルト4の上に、炭素基材として黒鉛粒子5を配置した。黒鉛粒子5の上に、カーボンフェルト6を配置し、その上にカーボンシート7を配置した。
SiO(g)+ 3CO(g) → SiC(s)+2CO2(g) …(2)
CO2(g) + C(s) → 2CO(g) …(3)
(実施例1:CVR法による炭化ケイ素被膜の形成)
SiO粉末として、平均粒子径300μmの粉末を用い、黒鉛粒子として、平均粒子径20μmの粒子を用い、表1に示す坩堝内の配置状態で、黒鉛粒子の表面に炭化ケイ素被膜を形成し、炭化ケイ素被覆黒鉛粒子を得た。加熱温度は1500℃とし、加熱時間は2時間とした。また、圧力は、20Paとなるように制御した。
温度を1500℃、圧力を105kPaとする以外は、上記実施例1と同様にして、炭化ケイ素被覆黒鉛粒子を作製した。
加熱温度を、1200℃、1300℃、1400℃、1450℃、1500℃、1550℃、1600℃、1700℃、及び1800℃に変化させて、加熱温度による影響を検討した。なお、圧力は、20Paとした。その他の条件は、上記実施例1と同様にして、黒鉛粒子の表面に、炭化ケイ素被膜を形成した。
加熱温度を1500℃とし、炭化ケイ素被膜を形成する際の圧力を、20Pa、50Pa、100Pa、150Pa、及び200Paに変化させて、炭化ケイ素被覆黒鉛粒子を作製した。作製した炭化ケイ素黒鉛粒子の表面の炭化ケイ素被膜の性状について、表2に評価結果を示す。
実施例1の炭化ケイ素被覆黒鉛粒子、比較例1の炭化ケイ素被覆黒鉛粒子、及び炭化ケイ素で被覆していない黒鉛粒子について、熱重量分析(TG)を行った。
実施例1の炭化ケイ素被覆黒鉛粒子を用いて、炭化ケイ素炭素複合焼結体を作製した。炭化ケイ素被覆黒鉛粒子を大電流放電接合装置(住友石炭工業社製、「SPS−1050」)を用い、加圧焼結することにより、炭化ケイ素炭素複合焼結体を作製した。この装置を用いることにより、放電プラズマ焼結により焼結させた。放電プラズマ焼結は、電流による直接加熱に加え、パルス通電による電流衝撃を発生させ、通常より低温で粉体を焼結させることができる。
図16は、本発明に従う実施形態のセラミックス被覆炭化ケイ素炭素複合焼結体を示す模式的断面図である。
2…カーボンシート
3…SiO粉末
4…カーボンフェルト
5…黒鉛粒子
6…カーボンフェルト
7…カーボンシート
10…黒鉛粒子
11…炭化ケイ素被膜
12…炭化ケイ素被覆黒鉛粒子
20…黒鉛粒子
21…炭化ケイ素界面層
22…炭化ケイ素炭素複合焼結体
23…セラミックス被覆層
24…セラミックス被覆炭化ケイ素炭素複合焼結体
Claims (21)
- 未結合手を有しないSP2炭素構造からなるベース部と、未結合手を有するSP2炭素構造からなるエッジ部とを表面に有する炭素基材を準備する工程と、
温度1400〜1600℃、圧力1〜150Paの雰囲気中で、前記炭素基材の表面と、SiOガスとを反応させて炭化ケイ素を形成することにより、炭化ケイ素で被覆された炭素基材を製造する工程とを備える炭化ケイ素被覆炭素基材の製造方法。 - 前記炭素基材が、黒鉛基材であることを特徴とする請求項1に記載の炭化ケイ素被覆炭素基材の製造方法。
- 前記炭素基材が、炭素粒子であることを特徴とする請求項1または2に記載の炭化ケイ素被覆炭素基材の製造方法。
- 前記炭素粒子の平均粒子径が、50nm〜500μmの範囲内であることを特徴とする請求項3に記載の炭化ケイ素被覆炭素基材の製造方法。
- 前記SiOガスが、前記炭素基材と共に配置されるSiO源から発生することを特徴とする請求項1〜4のいずれか1項に記載の炭化ケイ素被覆炭素基材の製造方法。
- 前記炭素基材及び前記SiO源が、反応容器内に配置されており、前記反応容器が焼成炉内に配置されていることにより、前記反応容器内を加熱し、排気することを特徴とする請求項5に記載の炭化ケイ素被覆炭素基材の製造方法。
- 未結合手を有しないSP2炭素構造からなるベース部と、未結合手を有するSP2炭素構造からなるエッジ部とを表面に有する炭素基材の表面をケイ素成分と反応させて炭化ケイ素を形成することにより、表面を炭化ケイ素の層で被覆した炭素基材であって、
前記炭化ケイ素の層の厚みが、20μm以下であることを特徴とする炭化ケイ素被覆炭素基材。 - 炭化ケイ素の層の厚みが1nm〜20μmの範囲内であることを特徴とする請求項7に記載の炭化ケイ素被覆炭素基材。
- 前記炭素基材が、黒鉛基材であることを特徴とする請求項7または8に記載の炭化ケイ素被覆炭素基材。
- 前記炭素基材が、炭素粒子であることを特徴とする請求項7〜9のいずれか1項に記載の炭化ケイ素被覆炭素基材。
- 前記炭素粒子の平均粒子径が、50nm〜500μmの範囲内であることを特徴とする請求項10に記載の炭化ケイ素被覆炭素基材。
- 空気中650℃1時間の加熱による重量減少が、5重量%未満であることを特徴とする請求項10または11に記載の炭化ケイ素被覆炭素基材。
- 請求項1〜6に記載の方法により製造されることを特徴とする炭化ケイ素被覆炭素基材。
- 炭化ケイ素で被覆された炭素基材粒子を焼結することによって得られる炭化ケイ素炭素複合焼結体であって、
相対密度が90〜100%であり、Al、Be、B及びSeの合計の含有量が0.1重量%未満であることを特徴とする炭化ケイ素炭素複合焼結体。 - 前記炭素基材粒子が、黒鉛粒子であることを特徴とする請求項14に記載の炭化ケイ素炭素複合焼結体。
- 前記炭素基材粒子の平均粒子径が、50nm〜500μmの範囲内であることを特徴とする請求項14または15に記載の炭化ケイ素炭素複合焼結体。
- 前記炭化ケイ素の層の厚みが、1nm〜20μmの範囲内であることを特徴とする請求項14〜16のいずれか1項に記載の炭化ケイ素炭素複合焼結体。
- 請求項10〜13のいずれか1項に記載の炭化ケイ素被覆炭素基材を焼結することによって得られることを特徴とする炭化ケイ素炭素複合焼結体。
- 請求項14〜18のいずれか1項に記載の炭化ケイ素炭素複合焼成体の表面の少なくとも一部の上に、セラミックス被覆層を形成したことを特徴とするセラミックス被覆炭化ケイ素炭素複合焼結体。
- 請求項14〜18のいずれか1項に記載の炭化ケイ素炭素複合焼結体を製造する方法であって、
2200℃以下の温度で焼結することを特徴とする炭化ケイ素炭素複合焼結体の製造方法。 - 焼結助剤を用いずに焼結することを特徴とする請求項20に記載の炭化ケイ素炭素複合焼結体の製造方法。
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KR1020127003033A KR20120076340A (ko) | 2009-09-04 | 2010-09-01 | 탄화규소 피복 탄소 기재의 제조 방법 및 탄화규소 피복 탄소 기재 및 탄화규소 탄소 복합 소결체, 세라믹스 피복 탄화규소 탄소 복합 소결체 및 탄화규소 탄소 복합 소결체의 제조 방법 |
RU2012112935/03A RU2012112935A (ru) | 2009-09-04 | 2010-09-01 | Способ получения углеродного материала с карбидокремниевым покрытием, углеродный материал с карбидокремниевым покрытием, спеченный комплекс карбид кремния/углерод, спеченный комплекс карбид кремния/углерод с керамическим покрытием и способ получения спеченного комплекса карбид кремния/углерод |
CN201080039227.7A CN102482165B (zh) | 2009-09-04 | 2010-09-01 | 碳化硅包覆碳基材的制造方法、碳化硅包覆碳基材、碳化硅碳复合烧结体、陶瓷包覆碳化硅碳复合烧结体以及碳化硅碳复合烧结体的制造方法 |
PCT/JP2010/064871 WO2011027756A1 (ja) | 2009-09-04 | 2010-09-01 | 炭化ケイ素被覆炭素基材の製造方法及び炭化ケイ素被覆炭素基材並びに炭化ケイ素炭素複合焼結体、セラミックス被覆炭化ケイ素炭素複合焼結体及び炭化ケイ素炭素複合焼結体の製造方法 |
EP20100813705 EP2474514A4 (en) | 2009-09-04 | 2010-09-01 | PROCESS FOR PRODUCING CARBON BASE MATERIAL COATED WITH SILICON CARBIDE, CARBON BASE MATERIAL COATED WITH SILICON CARBIDE, CARBON- (SILICON CARBIDE) FRITTED COMPLEX, CARBON- (SILICON CARBIDE) COATED FRITTED COMPLEX OF CERAMIC, AND PROCESS FOR PRODUCING SINK CARBON- (SILICON CARBIDE) COMPLEX |
US13/392,593 US9085493B2 (en) | 2009-09-04 | 2010-09-01 | Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex |
TW099129624A TWI477443B (zh) | 2009-09-04 | 2010-09-02 | 被覆碳化矽之碳基材之製造方法以及被覆碳化矽之碳基材與碳化矽碳複合燒結體、被覆陶瓷之碳化矽碳複合燒結體和碳化矽碳複合燒結體之製造方法 |
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US9045375B2 (en) | 2011-05-27 | 2015-06-02 | Toyo Tanso Co., Ltd. | Method for producing silicon carbide-carbon composite |
JP2013014493A (ja) * | 2011-06-07 | 2013-01-24 | Toyo Tanso Kk | 炭素−炭化ケイ素複合材 |
US9246175B2 (en) | 2012-06-18 | 2016-01-26 | Samsung Electronics Co., Ltd. | Composite support, method of preparing the same, electrode catalyst including the composite support, and membrane-electrode assembly and fuel cell each including the electrode catalyst |
JP2020026370A (ja) * | 2018-08-10 | 2020-02-20 | イビデン株式会社 | 反応装置 |
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KR20120076340A (ko) | 2012-07-09 |
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EP2474514A1 (en) | 2012-07-11 |
CN102482165A (zh) | 2012-05-30 |
CN102482165B (zh) | 2014-01-22 |
WO2011027756A1 (ja) | 2011-03-10 |
JP5737547B2 (ja) | 2015-06-17 |
US9085493B2 (en) | 2015-07-21 |
TW201113220A (en) | 2011-04-16 |
RU2012112935A (ru) | 2013-10-10 |
EP2474514A4 (en) | 2013-05-29 |
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