JP5733401B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP5733401B2
JP5733401B2 JP2013527923A JP2013527923A JP5733401B2 JP 5733401 B2 JP5733401 B2 JP 5733401B2 JP 2013527923 A JP2013527923 A JP 2013527923A JP 2013527923 A JP2013527923 A JP 2013527923A JP 5733401 B2 JP5733401 B2 JP 5733401B2
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semiconductor device
lead frame
metal layer
electronic component
wire
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JPWO2013021726A1 (ja
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伸 征矢野
伸 征矢野
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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US10741478B2 (en) * 2016-03-30 2020-08-11 Mitsubishi Electric Corporation Power module and method of manufacturing the same, and power electronic apparatus and method of manufacturing the same
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JP7341078B2 (ja) * 2020-02-07 2023-09-08 日立Astemo株式会社 半導体装置
JP7396118B2 (ja) * 2020-02-28 2023-12-12 富士電機株式会社 半導体モジュール
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JP2003243608A (ja) * 2002-02-15 2003-08-29 Mitsubishi Electric Corp 電力用モジュール
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JP4764692B2 (ja) 2005-09-29 2011-09-07 日立オートモティブシステムズ株式会社 半導体モジュール
JP2007335538A (ja) 2006-06-13 2007-12-27 Sanken Electric Co Ltd 半導体装置の製法
JP5076440B2 (ja) * 2006-10-16 2012-11-21 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2008074164A1 (fr) * 2006-12-21 2008-06-26 Abb Research Ltd Module semi-conducteur
JP4640345B2 (ja) 2007-01-25 2011-03-02 三菱電機株式会社 電力用半導体装置
WO2009081723A1 (fr) 2007-12-20 2009-07-02 Fuji Electric Device Technology Co., Ltd. Dispositif à semi-conducteurs et son procédé de fabrication
JP5217013B2 (ja) 2008-01-11 2013-06-19 日産自動車株式会社 電力変換装置およびその製造方法
JP4946959B2 (ja) 2008-04-09 2012-06-06 株式会社デンソー 半導体装置の製造方法
JP5119139B2 (ja) 2008-12-12 2013-01-16 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2011086743A (ja) 2009-10-15 2011-04-28 Mitsubishi Electric Corp 電力用半導体装置、及び該電力用半導体装置の製造方法
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CN103534796B (zh) 2016-06-01
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