JP5732216B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5732216B2 JP5732216B2 JP2010196523A JP2010196523A JP5732216B2 JP 5732216 B2 JP5732216 B2 JP 5732216B2 JP 2010196523 A JP2010196523 A JP 2010196523A JP 2010196523 A JP2010196523 A JP 2010196523A JP 5732216 B2 JP5732216 B2 JP 5732216B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Optical Filters (AREA)
Description
本実施の形態では、発光装置及び発光装置の作製方法の一形態を図1を用いて説明する。図1(E)には同一基板上に作製された異なる構造の2つの薄膜トランジスタの断面構造の一例を示す。
本実施の形態では、実施の形態1に示した複数の薄膜トランジスタと、エレクトロルミネッセンスを利用する発光素子とを用い、アクティブマトリクス型の発光表示装置を作製する一例を示す。
本実施の形態では、実施の形態1に示した複数の薄膜トランジスタを用いて、同一基板上に画素部と駆動回路を形成し、アクティブマトリクス型の発光表示装置を作製する一例を示す。
また、本実施の形態では、薄膜トランジスタと同一基板上に設けられる端子部の構成の一例を図5に示す。なお、図5において、図4と同じ箇所には同じ符号を用いて説明する。
本実施の形態では、実施の形態2に示した図3(A)及び図3(C)に用いる発光素子の素子構造の一例について説明する。
本実施の形態では、発光表示パネル(発光パネルともいう)の外観及び断面について、図7を用いて説明する。図7(A)は、第1の基板上に形成された薄膜トランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図7(B)は、図7(A)のH−Iにおける断面図に相当する。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
本明細書に開示する発光装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
11 配線
12 配線
13 配線
14 配線
15 配線
21 入力端子
22 入力端子
23 入力端子
24 入力端子
25 入力端子
26 出力端子
27 出力端子
28 薄膜トランジスタ
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
42 トランジスタ
43 トランジスタ
51 電源線
52 電源線
53 電源線
61 期間
62 期間
111a ゲート電極層
111b 容量配線層
111c ゲート電極層
113 酸化物半導体層
115a 電極層
115b 電極層
115c 容量電極層
123 酸化物半導体層
211a ゲート電極層
211b ゲート配線層
211c ゲート電極層
213 酸化物半導体層
213a 高抵抗ソース領域
213b 高抵抗ドレイン領域
215a ソース電極層
215b ドレイン電極層
215c 接続電極層
215d 接続電極層
215e 配線層
215f 接続電極層
215g 端子
216 導電層
223 チャネル形成領域
400 基板
402 ゲート絶縁層
407 酸化物絶縁層
408 保護絶縁層
411 カラーフィルタ層
412 オーバーコート層
414 電極
415 導電層
416 電極層
417 端子
418 導電層
450 薄膜トランジスタ
459 隔壁
460 薄膜トランジスタ
1001 電極
1002 電極
1003 EL層
1004 電荷発生層
1100 携帯電話機
1101 筐体
1102 表示部
1103 操作ボタン
1104 外部接続ポート
1105 スピーカ
1106 マイク
1800 筐体
1801 筐体
1802 表示パネル
1803 スピーカ
1804 マイクロフォン
1805 操作キー
1806 ポインティングデバイス
1807 カメラ用レンズ
1808 外部接続端子
1810 キーボード
1811 外部メモリスロット
3000 卓上照明器具
3001 照明装置
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 画素電極
4515 接続端子電極
4516 端子電極
4517 画素電極
4518a FPC
4519 異方性導電膜
4520 隔壁
4540 導電層
4542 酸化物絶縁層
4543 オーバーコート層
4544 絶縁層
4545 カラーフィルタ層
4548 接続電極層
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 電極
7004 EL層
7005 電極
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 電極
7014 EL層
7015 電極
7016 遮蔽膜
7017 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 電極
7024 EL層
7025 電極
7027 導電膜
7029 隔壁
7030 接続電極層
7031 酸化物絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7040 接続電極層
7041 酸化物絶縁層
7043 カラーフィルタ層
7044 オーバーコート層
7045 保護絶縁層
7050 接続電極層
7051 酸化物絶縁層
7053 平坦化絶縁層
7055 保護絶縁層
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
Claims (2)
- 画素部に設けられた第1のトランジスタと、
駆動回路に設けられた第2のトランジスタとを有し、
前記第1のトランジスタは、
第1のゲート電極と、
前記第1のゲート電極上のゲート絶縁層と、
前記ゲート絶縁層上の第1の酸化物半導体層とを有し、
前記第1の酸化物半導体層上に第4のゲート電極を有さず、
前記第2のトランジスタは、
第2のゲート電極と、
前記第2のゲート電極上の前記ゲート絶縁層と、
前記ゲート絶縁層上の第2の酸化物半導体層と、
前記第2の酸化物半導体層上の絶縁層と、
前記絶縁層上の第3のゲート電極とを有し、
前記第1のゲート電極と前記第2のゲート電極とは、同一面上に設けられ、
前記第1の酸化物半導体層は前記ゲート絶縁層上面と接する領域を有し、
前記第2の酸化物半導体層は前記ゲート絶縁層上面と接する領域を有し、
前記第2のゲート電極の電位は、前記第3のゲート電極の電位と同じであることを特徴とする半導体装置。 - 画素部に設けられた第1のトランジスタと、
駆動回路に設けられた第2のトランジスタとを有し、
前記第1のトランジスタは、
第1のゲート電極と、
前記第1のゲート電極上のゲート絶縁層と、
前記ゲート絶縁層上の第1の酸化物半導体層とを有し、
前記第1の酸化物半導体層上に第4のゲート電極を有さず、
前記第2のトランジスタは、
第2のゲート電極と、
前記第2のゲート電極上の前記ゲート絶縁層と、
前記ゲート絶縁層上の第2の酸化物半導体層と、
前記第2の酸化物半導体層上の絶縁層と、
前記絶縁層上の第3のゲート電極とを有し、
前記第1のゲート電極と前記第2のゲート電極とは、同一面上に設けられ、
前記第1の酸化物半導体層は前記ゲート絶縁層上面と接する領域を有し、
前記第2の酸化物半導体層は前記ゲート絶縁層上面と接する領域を有し、
前記第1の酸化物半導体層上にカラーフィルタ層を有し、
前記カラーフィルタ層上に、前記第1のトランジスタと電気的に接続する画素電極と、前記画素電極上の発光層とを有し、
前記第2のゲート電極の電位は、前記第3のゲート電極の電位と同じであることを特徴とする半導体装置。
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2010
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- 2010-08-26 US US12/869,327 patent/US8378344B2/en active Active
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US20110210324A1 (en) | 2011-09-01 |
TWI528603B (zh) | 2016-04-01 |
TW201128820A (en) | 2011-08-16 |
JP2017038089A (ja) | 2017-02-16 |
JP2019079818A (ja) | 2019-05-23 |
JP2015130513A (ja) | 2015-07-16 |
JP7480255B2 (ja) | 2024-05-09 |
WO2011027701A1 (en) | 2011-03-10 |
JP6852043B2 (ja) | 2021-03-31 |
JP2011077511A (ja) | 2011-04-14 |
US8378344B2 (en) | 2013-02-19 |
JP7174093B2 (ja) | 2022-11-17 |
JP2021108374A (ja) | 2021-07-29 |
JP2018028691A (ja) | 2018-02-22 |
JP2023014101A (ja) | 2023-01-26 |
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