KR100846968B1 - 유기전계발광표시장치 - Google Patents
유기전계발광표시장치 Download PDFInfo
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- KR100846968B1 KR100846968B1 KR1020070049147A KR20070049147A KR100846968B1 KR 100846968 B1 KR100846968 B1 KR 100846968B1 KR 1020070049147 A KR1020070049147 A KR 1020070049147A KR 20070049147 A KR20070049147 A KR 20070049147A KR 100846968 B1 KR100846968 B1 KR 100846968B1
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- thin film
- organic light
- light emitting
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- 239000010409 thin film Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 230000005525 hole transport Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- -1 ZnInGaO Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (11)
- 기판;상기 기판상에 소스전극, 드레인 전극 및 N형 반도체화합물로 이루어진 반도체층을 포함한 구동 박막트랜지스터 어레이;상기 박막트랜지스터 어레이 상부에 형성된 적어도 하나의 절연막;상기 구동 박막트랜지스터의 드레인 전극과 연결되는 캐소드 전극;상기 캐소드 전극상에 상기 캐소드 전극의 재료보다 일함수가 작은 재료로 이루어지며 상기 캐소드 전극의 전면(全面)에 형성된 금속박막;상기 금속박막 상에 상기 캐소드 영역에 마주하는 위치에 형성된 유기발광층; 및상기 유기발광층 상에 형성되는 애노드 전극을 포함하여 구성되는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 n형 반도체화합물은 ZnO, ZnGaO, AnInO, In2O3, ZnInGaO, ZnSnO 및 ZnSnO로 구성되는 군에서 선택되는 하나인 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 캐소드 전극의 재료는 ITO, Ag, 및 Al로 구성되는 군에서 선택되는 하나인 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 금속박막의 재료는 Cs, Mg, 및 Li로 구성되는 군에서 선택되는 하나인 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 금속박막의 두께는 0.01Å 내지 10Å인 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 구동 박막트랜지스터는 탑 게이트 구조, 바텀 게이트 구조(bottom gate structure), 코플레나 구조(coplanar structure), 및 역스태거드 구조(inverted staggered structure)로 구성되는 군에서 선택되는 하나인 것을 특징으로 하는 유 기전계발광표시장치.
- 제 1 항에 있어서,상기 애노드 전극과 상기 유기발광층 사이에는 정공주입층 및 정공수송층 중 적어도 어느 하나가 더 포함되는 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 캐소드 전극과 상기 유기발광층 사이에는 전자주입층 및 전자수송층 중적어도 어느 하나가 더 포함되는 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 기판은 투명한 재료이고, 상기 캐소드 전극의 재료는 ITO이고, 금속박막의 재료는 Cs인 것을 특징으로하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 유기전계발광표시장치에 구비된 화소회로는유기발광소자;상기 유기발광소자의 캐소드 전극에 드레인 전극이 연결되는 N형 구동박막트랜지스터; 및상기 구동박막트랜지스터의 게이트전극에 연결되는 스위칭 박막트랜지스터를 포함하는 것을 특징으로 하는 유기전계발광표시장치.
- 제 10 항에 있어서,상기 스위칭 박막트랜지스터는 N형 박막트랜지스터인 것을 특징으로 하는 유기전계발광표시장치.
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KR1020070049147A KR100846968B1 (ko) | 2007-05-21 | 2007-05-21 | 유기전계발광표시장치 |
US12/120,693 US7777225B2 (en) | 2007-05-21 | 2008-05-15 | Organic light-emitting display device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2462504A (en) * | 2008-08-13 | 2010-02-17 | Lg Display Co Ltd | Organic light emitting display and manufacturing method of the same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5484109B2 (ja) * | 2009-02-09 | 2014-05-07 | 三菱電機株式会社 | 電気光学装置 |
WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
KR101119046B1 (ko) * | 2010-01-08 | 2012-03-02 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101708847B1 (ko) * | 2010-04-08 | 2017-02-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR101818451B1 (ko) * | 2010-12-24 | 2018-01-16 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 및 그 제조방법 |
CN106449706B (zh) * | 2016-10-17 | 2019-05-03 | 昆山国显光电有限公司 | 显示面板及其制造方法 |
Citations (3)
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KR20030031650A (ko) * | 2001-10-15 | 2003-04-23 | 삼성에스디아이 주식회사 | 액티브 매트릭스형 유기전계 발광표시소자 및 그의 제조방법 |
KR20070025253A (ko) * | 2005-09-01 | 2007-03-08 | 학교법인 포항공과대학교 | 유기 발광 다이오드 및 이의 제조 방법 |
KR20070102063A (ko) * | 2006-04-13 | 2007-10-18 | 엘지.필립스 엘시디 주식회사 | 유기 전계 발광 표시소자 및 그 제조방법 |
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JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
KR100635514B1 (ko) | 2006-01-23 | 2006-10-18 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
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KR20030031650A (ko) * | 2001-10-15 | 2003-04-23 | 삼성에스디아이 주식회사 | 액티브 매트릭스형 유기전계 발광표시소자 및 그의 제조방법 |
KR20070025253A (ko) * | 2005-09-01 | 2007-03-08 | 학교법인 포항공과대학교 | 유기 발광 다이오드 및 이의 제조 방법 |
KR20070102063A (ko) * | 2006-04-13 | 2007-10-18 | 엘지.필립스 엘시디 주식회사 | 유기 전계 발광 표시소자 및 그 제조방법 |
Cited By (3)
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---|---|---|---|---|
GB2462504A (en) * | 2008-08-13 | 2010-02-17 | Lg Display Co Ltd | Organic light emitting display and manufacturing method of the same |
GB2462504B (en) * | 2008-08-13 | 2011-09-14 | Lg Display Co Ltd | Organic light emitting display and manufacturing method of the same |
KR101352237B1 (ko) * | 2008-08-13 | 2014-01-16 | 엘지디스플레이 주식회사 | 유기전계발광표시장치의 제조방법 |
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US7777225B2 (en) | 2010-08-17 |
US20080290343A1 (en) | 2008-11-27 |
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