JP6125155B2 - 半導体装置およびそれを備える平板表示装置 - Google Patents
半導体装置およびそれを備える平板表示装置 Download PDFInfo
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- JP6125155B2 JP6125155B2 JP2012110492A JP2012110492A JP6125155B2 JP 6125155 B2 JP6125155 B2 JP 6125155B2 JP 2012110492 A JP2012110492 A JP 2012110492A JP 2012110492 A JP2012110492 A JP 2012110492A JP 6125155 B2 JP6125155 B2 JP 6125155B2
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- 239000010409 thin film Substances 0.000 claims description 44
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 61
- 238000010586 diagram Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
20、22、24、26:半導体層
30:ゲート絶縁層
40、42、44、46:ゲート電極
50:層間絶縁層
50a:コンタクトホール
60a、62a、64a、66a:ソース電極
60b、62b、64b、66b:ドレイン電極
70:平坦化層
80:アノード電極
82:画素定義膜
84:有機発光層
86:カソード電極
Claims (8)
- 基板上に形成された半導体層と、
ゲート絶縁層により前記半導体層と電気的に絶縁されたゲート電極と、
前記ゲート電極を含む前記ゲート絶縁層上に形成された絶縁層と、
前記絶縁層上に前記半導体層と接続するように形成されたソース電極およびドレイン電極とを含み、
前記ソース電極又はドレイン電極が前記ゲート電極の少なくとも一部と重畳するように配置され、前記ソース電極、前記ドレイン電極および前記ゲート電極により、並列接続された複数の薄膜トランジスタが形成され、前記ゲート電極は前記複数の薄膜トランジスタの共通電極となっていることを特徴とする半導体装置。 - 前記重畳するように配置された前記ソース電極と、前記絶縁層と、前記ゲート電極とにより、キャパシタが構成されることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁層に前記半導体層が露出するようにコンタクトホールが形成され、前記コンタクトホールを介して前記ソース電極および前記ドレイン電極が前記半導体層に接続されていることを特徴とする請求項1に記載の半導体装置。
- スキャンラインおよびデータラインに接続された第1薄膜トランジスタと、
前記第1薄膜トランジスタに接続された第2薄膜トランジスタと、
前記第2薄膜トランジスタに接続された発光素子とを含み、
前記第2薄膜トランジスタは、
基板上に形成された半導体層と、
ゲート絶縁層により前記半導体層と電気的に絶縁されたゲート電極と、
前記ゲート電極を含む前記ゲート絶縁層上に形成された絶縁層と、
前記絶縁層上に前記半導体層と接続するように形成されたソース電極およびドレイン電極とを含み、
前記ソース電極又はドレイン電極が前記ゲート電極の少なくとも一部と重畳するように配置され、前記ソース電極、前記ドレイン電極および前記ゲート電極により、前記第2薄膜トランジスタを形成する直列接続および/または並列接続された複数の薄膜トランジスタが形成され、前記ゲート電極は前記複数の薄膜トランジスタの共通電極となっていることを特徴とする平板表示装置。 - 前記重畳するように配置された前記ソース電極と、前記絶縁層と、前記ゲート電極とにより、キャパシタが構成されることを特徴とする請求項4に記載の平板表示装置。
- 前記絶縁層に前記半導体層が露出するようにコンタクトホールが形成され、前記コンタクトホールを介して前記ソース電極および前記ドレイン電極が前記半導体層に接続されていることを特徴とする請求項4に記載の平板表示装置。
- 前記第2薄膜トランジスタの前記ソース電極が電源電圧に接続され、前記ドレイン電極が前記発光素子に接続されることを特徴とする請求項4に記載の平板表示装置。
- 前記発光素子は、アノード電極と、有機発光層と、カソード電極とを含み、前記アノード電極が前記第2薄膜トランジスタの前記ドレイン電極に接続されることを特徴とする請求項7に記載の平板表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0010388 | 2012-02-01 | ||
KR1020120010388A KR20130089044A (ko) | 2012-02-01 | 2012-02-01 | 반도체 장치 및 그를 구비하는 평판표시장치 |
Publications (2)
Publication Number | Publication Date |
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JP2013162120A JP2013162120A (ja) | 2013-08-19 |
JP6125155B2 true JP6125155B2 (ja) | 2017-05-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012110492A Active JP6125155B2 (ja) | 2012-02-01 | 2012-05-14 | 半導体装置およびそれを備える平板表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9053986B2 (ja) |
EP (1) | EP2624299A1 (ja) |
JP (1) | JP6125155B2 (ja) |
KR (1) | KR20130089044A (ja) |
CN (1) | CN103247690B (ja) |
TW (1) | TWI603134B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101672091B1 (ko) * | 2014-02-25 | 2016-11-02 | 엘지디스플레이 주식회사 | 복합형 박막 트랜지스터를 갖는 유기 전계 발광 표시 장치 |
KR102354377B1 (ko) * | 2014-11-24 | 2022-01-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102300026B1 (ko) * | 2015-01-08 | 2021-09-09 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102328678B1 (ko) * | 2015-02-09 | 2021-11-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이를 구비한 디스플레이 장치, 박막 트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법 |
CN106373996B (zh) * | 2015-07-21 | 2019-12-31 | 台达电子工业股份有限公司 | 半导体装置 |
KR102430819B1 (ko) * | 2015-08-19 | 2022-08-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
WO2017066601A1 (en) | 2015-10-16 | 2017-04-20 | Huang Yiren Ronnie | Method and apparatus for providing hybrid mode to access ssd drive |
CN105185793A (zh) * | 2015-10-28 | 2015-12-23 | 武汉华星光电技术有限公司 | 一种薄膜晶体管基板及其显示装置 |
CN105552085B (zh) * | 2015-12-25 | 2019-04-30 | 昆山国显光电有限公司 | 一种像素驱动电路及其制备方法 |
CN105655347A (zh) * | 2016-01-04 | 2016-06-08 | 昆山国显光电有限公司 | 一种tft背板、其制备方法及显示装置 |
KR102483956B1 (ko) | 2016-03-31 | 2023-01-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20180047540A (ko) | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102508468B1 (ko) * | 2018-02-08 | 2023-03-10 | 삼성디스플레이 주식회사 | 표시 장치 |
CN108320705B (zh) | 2018-02-14 | 2021-04-27 | 京东方科技集团股份有限公司 | 像素单元及其制作方法和阵列基板 |
JP2019032557A (ja) * | 2018-11-06 | 2019-02-28 | 株式会社ジャパンディスプレイ | 表示装置 |
KR20220148999A (ko) * | 2021-04-29 | 2022-11-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
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JP3783786B2 (ja) * | 1995-01-26 | 2006-06-07 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置 |
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-
2012
- 2012-02-01 KR KR1020120010388A patent/KR20130089044A/ko not_active Application Discontinuation
- 2012-05-14 JP JP2012110492A patent/JP6125155B2/ja active Active
- 2012-06-21 US US13/528,976 patent/US9053986B2/en active Active
- 2012-08-29 CN CN201210311792.5A patent/CN103247690B/zh active Active
- 2012-08-30 TW TW101131471A patent/TWI603134B/zh active
- 2012-09-11 EP EP12183869.2A patent/EP2624299A1/en not_active Ceased
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Publication number | Publication date |
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CN103247690B (zh) | 2017-12-19 |
TW201333588A (zh) | 2013-08-16 |
TWI603134B (zh) | 2017-10-21 |
CN103247690A (zh) | 2013-08-14 |
US9053986B2 (en) | 2015-06-09 |
JP2013162120A (ja) | 2013-08-19 |
KR20130089044A (ko) | 2013-08-09 |
US20130193439A1 (en) | 2013-08-01 |
EP2624299A1 (en) | 2013-08-07 |
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