CN105655347A - 一种tft背板、其制备方法及显示装置 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 173
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- 239000012212 insulator Substances 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
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- 238000001312 dry etching Methods 0.000 claims description 8
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- 229920005591 polysilicon Polymers 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000011810 insulating material Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
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- 238000005499 laser crystallization Methods 0.000 description 1
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- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
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Abstract
本发明公开了一种TFT背板的制备工艺,包括如下步骤:S1:在基板上依次形成缓冲层、半导体层、栅极绝缘层、第一金属层,所述第一金属层经刻蚀形成栅极层;S2、在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属层,刻蚀所述第二金属层形成电容层,再以电容层做掩膜版刻蚀电容绝缘材料层以暴露半导体层两端的部分区域,形成电容绝缘层;S3、在步骤S2的基础上沉积层间绝缘层,刻蚀层间绝缘层和栅极绝缘层形成接触孔使所述半导体层暴露;S4、在步骤S3的基础上沉积金属材料,刻蚀后形成源漏极。本发明提供的工艺通过减少刻孔工艺总膜层厚度,降低刻孔工艺难度,进而提高TFT电气特性稳定性。
Description
技术领域
本发明涉及平板显示领域,具体涉及一种TFT背板、其制备方法及显示装置。
背景技术
目前在低温多晶硅技术LTPS(LowTemperaturePoly-silicon)流程中接触孔的刻蚀工艺存在如下技术问题:
需要刻蚀的膜层很厚(层间介质层ILD:绝缘层 ),接触孔深且越往下孔径越小,反应过程中容易出现反应物不能及时排出而发生刻蚀停止现象;若通过延长刻蚀时间或增大偏置电源(BiasPower)来避免刻蚀停止,则会导致线宽损失(CDLoss)比较大,影响器件电学性能;
为解决上述技术问题,现有技术中对接触孔采用湿刻和干刻工艺相结合的方式,即先在干刻区进行干法刻蚀,刻蚀掉层间介质层和部分第一绝缘层,然后再将刻蚀器件运送到湿刻区进行湿法刻蚀,刻蚀掉剩余的第一绝缘层。由于湿法刻蚀能有效避免多晶硅层过刻,但需要增加待刻蚀器件在干刻区和湿刻区之间的运送工艺,工艺较繁琐。
发明内容
本发明所要解决的技术问题是现有TFT背板制备过程中接触孔刻蚀工艺难度较大导致其电学性能下降的问题,从而提供一种TFT背板的制备工艺,此工艺通过减少刻孔工艺总膜层厚度,降低刻孔工艺难度,进而提高TFT电气特性稳定性。
为解决上述技术问题,本发明是通过以下技术方案实现的:
一种TFT背板的制备工艺,包括如下步骤:
S1:在基板上依次形成缓冲层、半导体层、栅极绝缘层、第一金属层,所述第一金属层经刻蚀形成栅极层;
S2、在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属层,刻蚀所述第二金属层形成电容层,再以电容层做掩膜版刻蚀电容绝缘材料层以暴露半导体层两端的部分区域,形成电容绝缘层;
S3、在步骤S2的基础上沉积层间绝缘层,刻蚀层间绝缘层和栅极绝缘层形成贯穿层间绝缘层和栅极绝缘层的接触孔;
S4、在步骤S3的基础上沉积金属材料,刻蚀后形成源漏极。
所述的步骤S2为:
在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属Mo层,刻蚀所述第二金属Mo层形成电容层,在同一干刻机腔室内通过工艺参数的条件后,再以电容层做掩膜版刻蚀CI材料层以暴露半导体层两端的部分区域,形成电容绝缘层。
采用碳氟化合物刻蚀气体对层间绝缘层和栅极绝缘层进行刻蚀。
所述接触孔的孔径为2~5μm,所述接触孔的深度为400~1000nm。
所述层间绝缘层为氧化硅层SiOx,所述层间绝缘层为氮化硅层SiNx。
所述的栅极绝缘层为氧化硅层SiOx,所述的电容绝缘层为氮化硅层SiNx,所述半导体层为多晶硅层。
所述的缓冲层包括在基板上形成的第一缓冲层和第二缓冲层,所述的第一缓冲层为氮化硅层SiNx,所述的第二缓冲层为氧化硅层SiOx。
一种运用所述的制备工艺制备的TFT背板。
一种显示装置,所述显示装置包含有所述的TFT背板。
本发明相对于现有技术具有如下有益效果:
本发明所述的TFT背板的制备工艺是在栅极层上沉积电容绝缘材料层CI,再溅镀形成第二金属层,先将所述第二金属层刻蚀形成电容层后,在同一干刻机腔室内,进行工艺参数及条件变更,继续以电容层的图形作为掩膜版,进行下层电容绝缘材料层CI刻蚀,以暴露半导体层两端如的部分区域,形成电容绝缘层CI。在层间绝缘层ILD沉积完成后,进行接触孔刻蚀工艺,由于电容绝缘层CI在前层已经刻蚀完成,此处接触孔刻蚀工艺只需要需要将层间绝缘层ILD及栅极绝缘层GI层刻蚀完成即可,刻蚀膜层总厚度降低,降低工艺难度,增加电气特性稳定性。
附图说明
为了使本发明的内容更容易被清楚的理解,下面根据本发明的具体实施例并结合附图,对本发明作进一步详细的说明,其中
图1是本发明TFT背板的结构示意图;
其中附图标记为:
01-第一缓冲层、02-第二缓冲层,03-半导体层,04-栅极绝缘层、05-栅极层、06-电容绝缘层、07-电容层,08层间绝缘层,10-第一接触孔,11-第二接触孔,12-第三接触孔。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明实施方式作进一步地详细描述。
本发明可以以许多不同的形式实施,而不应该被理解为限于在此阐述的实施例。相反,提供这些实施例,使得本公开将是彻底和完整的,并且将把本发明的构思充分传达给本领域技术人员,本发明将仅由权利要求来限定。在附图中,为了清晰起见,会夸大层和区域的尺寸和相对尺寸。应当理解的是,当元件例如层、区域或基板被称作“设置在”或“设置在”另一元件“上”时,该元件可以直接设置在所述另一元件上,或者也可以存在中间元件。相反,当元件被称作“直接设置在”或“直接设置在”另一元件上时,不存在中间元件。
一种TFT背板的制备工艺,如图1所示,包括如下步骤:
S1:在基板上依次形成缓冲层、半导体层03、栅极绝缘层04、第一金属层,所述第一金属层经刻蚀形成栅极层05;
S2、在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属层,刻蚀所述第二金属层形成电容层07,再以电容层07做掩膜版刻蚀电容绝缘材料层以暴露半导体层03两端的部分区域,形成电容绝缘层06;
S3、在步骤S2的基础上沉积层间绝缘层,在预定位置用碳氟化合物刻蚀气体刻蚀层间绝缘层08和栅极绝缘层04形成贯穿层间绝缘层08和栅极绝缘层04接触孔,对层间绝缘层08、层间绝缘层08和栅极绝缘层04进行刻蚀。所述的接触孔包括第一接触孔10,第二接触孔11和第三接触孔12,所述第一接触孔10贯穿所述层间绝缘层08和栅极绝缘层04使所述半导体层03暴露;所述的第二接触孔11贯穿所述层间绝缘层08和栅极绝缘层04使所述电容层07暴露;所述的第三接触孔12贯穿所述层间绝缘层08和栅极绝缘层04使所述栅极层05暴露;
S4、在步骤S3的基础上沉积金属材料Ti/Al/Ti,刻蚀后形成源漏极。
具体地,所述的步骤S2为:
在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属Mo层,刻蚀所述第二金属Mo层形成电容层07,在同一干刻机腔室内通过工艺参数的条件后,再以电容层07做掩膜版刻蚀电容绝缘层06以暴露半导体层03两端的部分区域,形成电容绝缘层06。
所述接触孔的孔径为2~5μm,所述接触孔的深度为400~1000nm。
所述层间绝缘层08为氧化硅层SiOx,所述层间绝缘层08为氮化硅层SiNx。
所述的栅极绝缘层04为氧化硅层SiOx,所述的电容绝缘层06为氮化硅层SiNx,所述半导体层03为多晶硅层。
所述的缓冲层包括在基板上形成的第一缓冲层01和第二缓冲层02,所述的第一缓冲层01为氮化硅层SiNx,所述的第二缓冲层02为氧化硅层SiOx。
应用例
如图1所示,本发明制备的TFT背板中制备的第一缓冲层01为氮化硅层SiNx,厚度为所述第二缓冲层02氧化硅层SiOx,厚度为所述半导体层03为多晶硅层,厚度为所述栅极绝缘层04为氧化硅层SiOx,厚度为所述栅极层05为金属Mo层,厚度为所述电容绝缘层06为氮化硅层SiNx,厚度为所述电容层07为金属Mo层,厚度为所述层间绝缘层08为氧化硅层SiOx,厚度为所述层间绝缘层08为氮化硅层SiNx,厚度为
其制备方法包括下述步骤:
S1:在基板上依次沉积缓冲层,半导体层03、栅极绝缘层04和第一金属层,具体地:
通过等离子体增强化学气相沉积法(PECVD)在基板00上依次形成厚度为的第一缓冲层01(氮化硅层SiNx),厚度为的第二缓冲层02(氧化硅层SiOx),厚度为的所述非晶硅层,通过对非晶硅层进行激光晶化形成多晶硅层,再通过刻蚀工艺图案化,形成半导体层03;
通过等离子体增强化学气相沉积法(PECVD)形成覆盖所述半导体层03且厚度为的栅极绝缘层04(氧化硅层SiOx);通过等离子体增强化学气相沉积法在所述栅极绝缘层04上依次形成厚度为的第一金属层,所述第一金属层经刻蚀形成栅极层05
S2、在步骤S1的基础上沉积氮化硅层SiNx形成电容绝缘材料层,再溅镀形成第二金属层Mo层,刻蚀所述第二金属层Mo层形成电容层07,在同一干刻机腔室内通过工艺参数的条件后,再以电容层07做掩膜版刻蚀电容绝缘层06以暴露半导体层03两端的部分区域,形成电容绝缘层06。
S3、在步骤S2的基础上沉积氧化硅层SiOx形成层间绝缘层08,在预定位置用碳氟化合物刻蚀气体刻蚀层间绝缘层08和栅极绝缘层04形成贯穿层间绝缘层08和栅极绝缘层04接触孔,对层间绝缘层08、层间绝缘层08和栅极绝缘层04进行刻蚀。所述的接触孔包括第一接触孔10,第二接触孔11和第三接触孔12,所述第一接触孔10贯穿所述层间绝缘层08和栅极绝缘层04使所述半导体层03暴露;所述的第二接触孔11贯穿所述层间绝缘层08和栅极绝缘层04使所述电容层07暴露;所述的第三接触孔12贯穿所述层间绝缘层08和栅极绝缘层04使所述栅极层05暴露;
所述接触孔的孔径为2~5μm,所述接触孔的深度为400~1000nm。
S4、在步骤S3的基础上沉积金属材料Ti/Al/Ti,刻蚀后形成源漏极。
一种显示装置,所述显示装置包含上述方法制备得到的TFT背板,还包括在所述的TFT背板依次层叠设置的第一电极层(阳极)、有机发光单元和第二电极层(阴极),所述的有机发光单元包括堆叠设置的第一有机功能层、发光层和第二有机功能层,所述第一有机功能层包括空穴注入层和/或空穴传输层,所述的第二有机功能层包括电子传输层和/或电子注入层。所述显示装置选用的材料、规格、制备方法同现有技术,不为本发明创造的必要技术特征,本实施例中不再赘述。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。
Claims (9)
1.一种TFT背板的制备工艺,其特征在于,包括如下步骤:
S1:在基板上依次形成缓冲层、半导体层(03)、栅极绝缘层(04)、第一金属层,所述第一金属层经刻蚀形成栅极层(05);
S2、在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属层,刻蚀所述第二金属层形成电容层(07),再以电容层(07)做掩膜版刻蚀电容绝缘材料层以暴露半导体层(03)两端的部分区域,形成电容绝缘层(06);
S3、在步骤S2的基础上沉积层间绝缘层,刻蚀层间绝缘层(08)和栅极绝缘层(04)形成贯穿层间绝缘层(08)和栅极绝缘层(04)的接触孔;
S4、在步骤S3的基础上沉积金属材料,刻蚀后形成源漏极。
2.根据权利要求1所述的TFT背板的制备工艺,其特征在于,所述的步骤S2为:
在步骤S1的基础上沉积电容绝缘材料层,再溅镀形成第二金属Mo层,刻蚀所述第二金属Mo层形成电容层(07),在同一干刻机腔室内通过工艺参数的条件后,再以电容层(07)做掩膜版刻蚀CI材料层以暴露半导体层(03)两端的部分区域,形成电容绝缘层(06)。
3.根据权利要求2所述的TFT背板的制备工艺,其特征在于,采用碳氟化合物刻蚀气体对层间绝缘层(08)和栅极绝缘层(04)进行刻蚀。
4.根据权利要求3所述的TFT背板的制备工艺,其特征在于,所述接触孔的孔径为2~5μm,所述接触孔的深度为400~1000nm。
5.根据权利要求4所述的TFT背板的制备工艺,其特征在于,所述层间绝缘层(08)为氧化硅层SiOx,所述层间绝缘层(08)为氮化硅层SiNx。
6.根据权利要求1-5任一项所述的TFT背板的制备工艺,其特征在于,所述的栅极绝缘层(04)为氧化硅层SiOx,所述的电容绝缘层(06)为氮化硅层SiNx,所述半导体层(03)为多晶硅层。
7.根据权利要求1-5任一项所述的TFT背板的制备工艺,其特征在于,所述的缓冲层包括在基板上形成的第一缓冲层(01)和第二缓冲层(02),所述的第一缓冲层(01)为氮化硅层SiNx,所述的第二缓冲层(02)为氧化硅层SiOx。
8.一种由权利要求1-7任一项所述的制备工艺制备的TFT背板。
9.一种显示装置,其特征在于,所述显示装置包含有权利要求8所述的TFT背板。
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