CN105789266A - 一种oled阵列基板及其制备方法、显示装置 - Google Patents
一种oled阵列基板及其制备方法、显示装置 Download PDFInfo
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Abstract
本发明实施例提供了一种OLED阵列基板及其制备方法、显示装置,涉及显示技术领域,可减少OLED阵列基板中公共电源供给线占据的有效显示区域的面积,提高包括该阵列基板的显示装置的开口率,进而延长OLED显示装置的使用寿命。该OLED阵列基板包括:多个像素单元和金属走线;像素单元包括:OLED发光单元、驱动晶体管和存储电容;覆盖驱动晶体管、存储电容和金属走线的绝缘层;位于绝缘层上方的金属导电层,金属导电层用于向像素单元提供公共电压;金属导电层与金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠。本发明用于OLED阵列基板、以及包括该阵列基板的显示装置的制备。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种OLED阵列基板及其制备方法、显示装置。
背景技术
目前OLED显示(OrganicLight-EmittingDisplay,有机电致发光显示)装置的一个主流显示方式为oxideTFT(oxideThinFilmTransistor,氧化物薄膜晶体管)+WOLED(白光OLED显示)+COA(colorfilteronarray,即彩色滤色膜制作在阵列基板上)。为了解决oxideTFT的阈值电压(Vth)偏移及发光亮度不均一的问题,上述主流显示方式的驱动像素采用了3T1C的外部补偿技术,其中“3T1C”是指一个像素单元中包括3个薄膜晶体管(TFT)以及1个存储电容Cst。
但是上述OLED显示装置的像素开口率较小;并且由于像素开口率减小,OLED显示装置的发光强度必须增大以弥补像素开口率减小对于OLED显示装置显示的影响,从而影响了OLED显示装置的使用寿命。
发明内容
鉴于此,为解决现有技术的问题,本发明的实施例提供一种OLED阵列基板及其制备方法、显示装置,可减少OLED阵列基板中公共电源供给线占据的有效显示区域的面积,从而提高了包括该OLED阵列基板的显示装置的开口率,进而延长OLED显示装置的使用寿命。
为达到上述目的,本发明的实施例采用如下技术方案:
一方面、本发明实施例提供了一种OLED阵列基板,所述OLED阵列基板包括:多个像素单元和金属走线;所述像素单元包括:OLED发光单元、驱动晶体管和存储电容;覆盖所述驱动晶体管、所述存储电容和所述金属走线的绝缘层;所述OLED阵列基板还包括:位于所述绝缘层上方的金属导电层,所述金属导电层用于向所述像素单元提供公共电压;所述金属导电层与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠。
可选的,所述金属走线包括:连接所述像素单元与检测集成电路的检测补偿线;所述金属导电层包括:平行于所述检测补偿线的第一公共电源供给线,所述第一公共电源供给线与所述检测补偿线在垂直于所述OLED阵列基板的方向上交叠。
可选的,所述金属走线包括:栅线;所述金属导电层包括:平行于所述栅线的第二公共电源供给线,所述第二公共电源供给线与所述栅线在垂直于所述OLED阵列基板的方向上交叠。
优选的,所述第二公共电源供给线还与所述驱动晶体管所在的区域、所述存储电容所在的区域在垂直于所述OLED阵列基板的方向上交叠。
可选的,所述金属走线包括:数据线;所述金属导电层包括:平行于所述数据线的第三公共电源供给线,所述第三公共电源供给线与所述数据线在垂直于所述OLED阵列基板的方向上交叠。
在上述基础上优选的,所述金属走线包括:数据线;所述OLED阵列基板还包括:与所述数据线同层设置的数据线保留图案;所述金属导电层通过贯通所述绝缘层的第一通孔、第二通孔分别与所述驱动晶体管的源极、所述数据线保留图案相连接。
进一步可选的,所述OLED发光单元包括:依次远离衬底基板的第一电极、发光层、第二电极;在所述金属导电层包括有第三公共电源供给线的情况下,所述OLED阵列基板还包括:覆盖所述金属导电层和所述绝缘层的层间绝缘层;所述第一电极设置在所述层间绝缘层上。
可选的,所述像素单元还包括:第一晶体管和第二晶体管,所述金属走线包括:数据线、栅线和检测补偿线;
所述第一晶体管的源极与所述数据线电连接、其漏极与所述驱动晶体管的栅极电连接、其栅极与所述栅线电连接;
所述驱动晶体管的源极与所述金属导电层电连接、其漏极与所述OLED发光单元的阳极和所述第二晶体管的源极电连接;
所述存储电容的一端与所述第一晶体管的漏极电连接、另一端与所述驱动晶体管的漏极电连接;所述OLED发光单元的阴极接地;
所述第二晶体管的栅极与所述检测补偿线电连接。
另一方面、本发明实施例还提供了一种OLED阵列基板的制备方法,所述制备方法包括:形成多个像素单元和金属走线的步骤;形成的所述像素单元包括:OLED发光单元、驱动晶体管和存储电容;形成覆盖所述像素单元和所述金属走线的绝缘层的步骤;所述制备方法还包括:在所述绝缘层上方形成与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠的金属导电层,所述金属导电层用于向所述像素单元提供公共电压。
可选的,所述制备方法具体包括:在衬底基板上形成驱动晶体管、存储电容以及金属走线;形成的所述金属走线包括:数据线;形成与所述数据线同层设置的数据线保留图案;形成覆盖所述驱动晶体管、所述存储电容以及所述金属走线的绝缘层;所述金属导电层通过贯通所述绝缘层的第一通孔、第二通孔分别与所述驱动晶体管的源极、所述数据线保留图案相连接;所述绝缘层上还形成有露出所述驱动晶体管的漏极的第三通孔;在所述绝缘层上方形成第一电极和金属导电层;所述金属导电层与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠,用于向所述像素单元提供公共电压;所述第一电极通过所述第三通孔与所述驱动晶体管的漏极相连接;形成覆盖所述第一电极和所述金属导电层的像素界定层;在所述像素界定层的开口部分形成发光层;在所述发光层上形成第二电极;其中,所述第一电极、所述发光层和所述第二电极构成OLED发光单元;所述OLED发光单元、所述驱动晶体管和所述存储电容构成所述像素单元。
优选的,所述在所述绝缘层上方形成第一电极和金属导电层的步骤包括:在绝缘层上形成金属导电层;形成的所述金属导电层包括:平行于所述数据线的第三公共电源供给线,所述第三公共电源供给线与所述数据线在垂直于所述OLED阵列基板的方向上交叠;形成覆盖所述金属导电层的层间绝缘层;所述层间绝缘层上形成有与所述第三通孔贯通的第四通孔;在所述层间绝缘层上形成第一电极;所述第一电极通过所述第四通孔和所述第三通孔与所述驱动晶体管的漏极相连接。
再一方面、本发明实施例还提供了一种显示装置,包括上述任一项所述的OLED阵列基板。
基于此,在本发明实施例提供的上述OLED显示装置中,由于用于向像素单元提供公共电压VDD的金属导电层设置在绝缘层上方,且与显示区域内不透光的金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠,减少了OLED显示装置中相当于公共电源供给线的金属导电层占据的有效显示区域的面积,提高了OLED显示装置的开口率;由于开口率得以提高,不需要增加OLED发光单元的发光强度来弥补像素开口率的减小对于OLED显示装置显示的影响,从而提高了OLED显示装置的使用寿命。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种OLED阵列基板的平面架构示意图一;
图2为本发明实施例提供的一种OLED阵列基板的平面架构示意图二;
图3为本发明实施例提供的一种OLED阵列基板的平面架构示意图三;
图4为本发明实施例提供的一种OLED阵列基板的平面架构示意图四;
图5为本发明实施例提供的一种OLED阵列基板的平面架构示意图五;
图6为本发明实施例提供的一种OLED阵列基板的平面架构示意图六;
图7为本发明实施例提供的一种OLED阵列基板的截面架构示意图一;
图8为本发明实施例提供的一种OLED阵列基板的截面架构示意图二;
图9为本发明实施例提供的一种3T1C驱动像素结构的外部补偿电路结构示意图;
图10为本发明实施例提供的一种OLED阵列基板的制备方法流程示意图一;
图11为本发明实施例提供的一种OLED阵列基板的制备方法流程示意图二。
附图标记:
10-衬底基板;20-栅极;21-栅线;22-数据线引线;30-栅绝缘层;40-有源层;50-源极;51-漏极;52-数据线;53-数据线保留图案;60-绝缘层;61-保护层;62-平坦层;70-彩膜层;80-第一电极;81-发光层;82-第二电极;90-金属导电层;91-第一公共电源供给线;92-第二公共电源供给线;93-第三公共电源供给线;100-像素界定层;110-检测补偿线;120-层间绝缘层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
需要指出的是,除非另有定义,本发明实施例中所使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员共同理解的相同含义。还应当理解,诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义,而不应用理想化或极度形式化的意义来解释,除非这里明确地这样定义。
并且,由于本发明实施例所涉及的OLED阵列基板中各图案尺寸非常微小,为了清楚起见,本发明实施例附图中的各结构图案尺寸均被放大,除非另有明确说明,不代表实际尺寸与比例。
需要说明的是,在本发明实施例的描述中,“A与B在垂直于该OLED阵列基板的方向上交叠”是指:A与B在垂直于该OLED阵列基板的方向上完全重叠,或者A与B在垂直于该OLED阵列基板的方向上部分重叠。本发明对此不作限定。考虑到更好的提高像素开口率,可以选择前者。
本发明实施例提供了一种OLED阵列基板,该OLED阵列基板包括:多个像素单元和金属走线;该像素单元包括:OLED发光单元、驱动晶体管和存储电容;覆盖驱动晶体管、存储电容和金属走线的绝缘层;上述OLED阵列基板还包括:位于绝缘层上方的金属导电层,金属导电层用于向像素单元提供公共电压(VDD);金属导电层与金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠。
需要说明的是,上述的金属走线例如可以是栅线、数据线、连接像素单元与检测集成电路(SenseIC)的检测补偿线(即Senseline)中的至少一种走线。另外,本领域技术人员根据现有技术可以获知:上述OLED阵列基板包括:显示区域和显示区域之外的外围区域,其中,显示区域又称AA(ActiveArea)区,一般用于实现显示,外围区域可用于设置驱动电路等。上述多个像素单元和金属走线均位于显示区域内。
这样一来,由于用于向像素单元提供公共电压VDD的金属导电层设置在绝缘层上方,且与显示区域内不透光的金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠,减少了OLED阵列基板中相当于公共电源供给线的金属导电层占据的有效显示区域的面积,提高了包括该OLED阵列基板的显示装置的开口率;由于开口率得以提高,不需要增加OLED发光单元的发光强度来弥补像素开口率的减小对于OLED显示面板显示的影响,从而提高了OLED显示面板中OLED器件的使用寿命。
上述金属导电层可以是公共电源供给线。下面按照金属导电层的不同位置以及金属走线包括的不同情况,具体说明本实施例提供的OLED阵列基板。
在上述基础上可选的,如图1所示,上述的金属走线具体包括:连接像素单元与检测集成电路的检测补偿线110;上述的金属导电层具体包括:平行于该检测补偿线110的第一公共电源供给线91,第一公共电源供给线91与检测补偿线110在垂直于所述OLED阵列基板的方向上交叠(图中以虚线示意出位于下方的检测补偿线110),并进一步优选地位于检测补偿线110的正上方。
由于检测补偿线与第一公共电源供给线在垂直于所述OLED阵列基板的方向上交叠,可使得检测补偿线与第一公共电源供给线之间形成一定的电容,增加Senseline的电容,保证了Senseline电容的稳定性。
在上述基础上可选的,如图2所示,上述的金属走线具体包括:栅线21;上述的金属导电层具体包括:平行于栅线21的第二公共电源供给线92,第二公共电源供给线92与栅线21在垂直于所述OLED阵列基板的方向上交叠(图中以虚线示意出位于下方的栅线21),并进一步优选地位于栅线21的正上方。
这里,由于金属导电层设置在绝缘层上方,与栅线之间的距离较远,能够减小栅线与VDD发生静电放电(Electro-StaticDischarge,简称ESD)的风险。
进一步的,考虑到栅线所在的区域与驱动晶体管和存储电容的区域相距很近,如图3所示,可以将第二公共电源供给线92设置地再宽些与驱动晶体管所在的区域、存储电容所在的区域在垂直于所述OLED阵列基板的方向上交叠。这样一来,在包括有栅线21、驱动晶体管以及存储电容的区域形成了横向大面积的VDD区域,使得第二公共电源供给线的宽度较大,降低了VDD的电压降(IRdrop),降低了OLED阵列基板的能耗。
在上述基础上可选的,如图4所示,上述的金属走线具体包括:数据线52;上述的金属导电层具体包括:平行于数据线52的第三公共电源供给线93,第三公共电源供给线93与数据线52在垂直于所述OLED阵列基板的方向上交叠(图中以虚线示意出位于下方的数据线52),并进一步优选地位于数据线52的正上方。
需要说明的是,上述图1至图4仅分别单独示意出金属导电层包括有第一公共电源供给线91、第二公共电源供给线92、第三公共电源供给线93任一者的情况。本发明实施例对此不作限定,如图5所示,上述的金属导电层可以包括有上述的第一公共电源供给线与第二公共电源供给线,即第一公共电源供给线与第二公共电源供给线相互之间相连以形成一体结构;或者,如图6所示,上述的金属导电层可以包括有上述的第一公共电源供给线、第二公共电源供给线以及第三公共电源供给线,即第一公共电源供给线、第二公共电源供给线以及第三公共电源供给线相互之间相连以形成一体结构,以使得金属导电层的面积更大,VDD的IRdrop更小。
进一步的,如图7所示,OLED阵列基板还包括:与数据线同层设置的数据线保留图案;金属导电层通过贯通绝缘层的第一通孔(图中标记为a)、第二通孔(图中标记为b)分别与驱动晶体管的源极、数据线保留图案相连接。上述数据线保留图案一般位于显示区域(图中标记为AA区域,表示ActiveArea)之外的外围区域。
需要说明的是,图7中的各层结构依次为:衬底基板10→栅极20、栅线以及与栅金属同层设置的数据线引线22→栅绝缘层30→有源层40→源极50、漏极51、数据线以及与数据线同层设置的数据线保留图案53→保护层61→彩膜层70→平坦层62→OLED发光单元的第一电极80和金属导电层90→像素界定层100→OLED发光单元的发光层81→OLED发光单元的第二电极82。
这里,由于目前主流的OLED阵列基板是集成有彩膜的COA基板,故上述图7中示意的各层结构还包括有彩膜层70。在此情况下,上述的绝缘层60可以由覆盖驱动TFT的保护层(通常简称为PAS层)61和位于保护层61上方的覆盖彩膜层70的平坦层(通常简称为OC层,OverCoat)62构成,即上述的第一通孔、第二通孔均贯通这两层。
进一步的,在上述金属导电层包括有第三公共电源供给线的情况下,如图8所示,OLED阵列基板还包括:覆盖金属导电层90和绝缘层60的层间绝缘层120;OLED发光单元的第一电极80设置在层间绝缘层120上。
这样一来,由于在数据线上方设置了与其重叠的第三公共电源供给线,为了保证OLED发光单元的第一电极(即像素电极,例如可以由ITO材料构成)不与金属导电层发生短路,本发明实施例进一步在金属导电层与第一电极之间设置了上述的层间绝缘层。这样一来,可以通过减少金属导电层与第一电极之间的距离来进一步增加开口率,从而既能够减少VDD的IRdrop又能保证开口率的进一步增加。
可选的,参考图9所示,像素单元还包括:第一晶体管T1和第二晶体管T2,金属走线包括:数据线Data、栅线G1和检测补偿线G2;第一晶体管T1的源极与数据线Data电连接、其漏极与驱动晶体管T3的栅极电连接、其栅极与栅线G1电连接;驱动晶体管T3的源极与金属导电层VDD电连接、其漏极与OLED发光单元的阳极和第二晶体管T2的源极电连接;存储电容Cst的一端与第一晶体管T1的漏极电连接、另一端与驱动晶体管T3的漏极电连接;OLED发光单元的阴极接地;第二晶体管T2的栅极与检测补偿线G2电连接。这样可以实现3T1C的外部补偿结构。该种结构可以解决oxideTFT的阈值电压(Vth)偏移及发光亮度不均一的问题。
进一步的,本发明实施例还提供了一种上述的OLED阵列基板的制备方法,该制备方法包括:形成多个像素单元和金属走线的步骤;形成的像素单元包括:OLED发光单元、驱动晶体管和存储电容;形成覆盖像素单元和金属走线的绝缘层的步骤;上述制备方法还包括:在绝缘层上方形成与金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠的金属导电层,金属导电层用于向像素单元提供公共电压。
上述制备方法具体包括:在衬底基板上形成驱动晶体管、存储电容以及金属走线;形成的金属走线包括:数据线;形成与数据线同层设置的数据线保留图案;形成覆盖驱动晶体管、存储电容以及金属走线的绝缘层;金属导电层通过贯通绝缘层的第一通孔、第二通孔分别与驱动晶体管的源极、数据线保留图案相连接;绝缘层上还形成有露出驱动晶体管的漏极的第三通孔;在绝缘层上方形成第一电极和金属导电层;金属导电层与金属走线、驱动晶体管和存储电容中的至少一者在垂直于该OLED阵列基板的方向上交叠,用于向像素单元提供公共电压;第一电极通过第三通孔与驱动晶体管的漏极相连接;形成覆盖第一电极和金属导电层的像素界定层;在像素界定层的开口部分形成发光层;在发光层上形成第二电极;其中,第一电极、发光层和第二电极构成OLED发光单元;OLED发光单元、驱动晶体管和存储电容构成像素单元。
这里,存储电容的上电极例如可以与驱动晶体管的源漏极同层设置,存储电容的下电极可以与驱动晶体管的栅极同层设置。
示例的,由于目前主流的OLED阵列基板是集成有彩膜的COA基板,在此情况下,上述的绝缘层可以由覆盖驱动TFT的保护层(通常简称为PAS层)和位于保护层上方的覆盖彩膜层的平坦层(通常简称为OC层,OverCoat)构成,故上述制备方法的具体步骤和各构图工艺分别如图10中(a)部分和(b)所示,在衬底基板上依次形成:包括栅极、栅线以及与栅金属同层设置的数据线引线的栅金属层→栅绝缘层→有源层→刻蚀阻挡层(这里,若有源层的材料为不容易受到源漏极刻蚀影响的材料,也可以省略刻蚀阻挡层的制备步骤,具体可沿用现有技术,本发明实施例对此不作限定)→包括源极、漏极、数据线以及与数据线同层设置的数据线保留图案的源漏金属层→保护层→彩膜层→平坦层→OLED发光单元的第一电极和金属导电层→像素界定层→OLED发光单元的发光层→OLED发光单元的第二电极。
在上述基础上,在绝缘层上方形成第一电极和金属导电层的步骤具体包括:在绝缘层上形成金属导电层;形成的金属导电层包括:平行于数据线的第三公共电源供给线,第三公共电源供给线与数据线在垂直于所述OLED阵列基板的方向上交叠;参考图8所示,形成覆盖金属导电层90的层间绝缘层120;层间绝缘层120上形成有与第三通孔(图中标记为c)贯通的第四通孔(图中标记为d);在层间绝缘层120上形成第一电极80;第一电极80通过第四通孔和第三通孔与驱动晶体管的漏极51相连接。
由于在数据线上方设置了与其重叠的第三公共电源供给线,为了保证OLED发光单元的第一电极(即像素电极,例如可以由ITO材料构成)不与金属导电层发生短路,本发明实施例进一步在金属导电层与第一电极之间设置了上述的层间绝缘层。这样一来,可以通过减少金属导电层与第一电极之间的距离来进一步增加开口率,从而既能够减少VDD的IRdrop又能保证开口率的进一步增加。
上述制备方法的具体步骤和各构图工艺分别如图11中(a)部分和(b)所示,在衬底基板上依次形成:包括栅极、栅线以及与栅金属同层设置的数据线引线的栅金属层→栅绝缘层→有源层→刻蚀阻挡层(这里,若有源层的材料为不容易受到源漏极刻蚀影响的材料,也可以省略刻蚀阻挡层的制备步骤,具体可沿用现有技术,本发明实施例对此不作限定)→包括源极、漏极、数据线以及与数据线同层设置的数据线保留图案的源漏金属层→保护层→彩膜层→平坦层→金属导电层→层间绝缘层→OLED发光单元的第一电极→像素界定层→OLED发光单元的发光层→OLED发光单元的第二电极。
在上述基础上,本发明实施例还提供了一种显示装置,该显示装置包括上述的OLED阵列基板。
上述显示装置具体可以是OLED显示器、OLED电视、数码相框、手机、平板电脑等具有任何显示功能的产品或者部件。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (12)
1.一种OLED阵列基板,所述OLED阵列基板包括:多个像素单元和金属走线;所述像素单元包括:OLED发光单元、驱动晶体管和存储电容;覆盖所述驱动晶体管、所述存储电容和所述金属走线的绝缘层;其特征在于,所述OLED阵列基板还包括:
位于所述绝缘层上方的金属导电层,所述金属导电层用于向所述像素单元提供公共电压;
所述金属导电层与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠。
2.根据权利要求1所述的OLED阵列基板,其特征在于,
所述金属走线包括:连接所述像素单元与检测集成电路的检测补偿线;
所述金属导电层包括:平行于所述检测补偿线的第一公共电源供给线,所述第一公共电源供给线与所述检测补偿线在垂直于所述OLED阵列基板的方向上交叠。
3.根据权利要求1所述的OLED阵列基板,其特征在于,
所述金属走线包括:栅线;
所述金属导电层包括:平行于所述栅线的第二公共电源供给线,所述第二公共电源供给线与所述栅线在垂直于所述OLED阵列基板的方向上交叠。
4.根据权利要求3所述的OLED阵列基板,其特征在于,
所述第二公共电源供给线还与所述驱动晶体管所在的区域、所述存储电容所在的区域在垂直于所述OLED阵列基板的方向上交叠。
5.根据权利要求1所述的OLED阵列基板,其特征在于,
所述金属走线包括:数据线;
所述金属导电层包括:平行于所述数据线的第三公共电源供给线,所述第三公共电源供给线与所述数据线在垂直于所述OLED阵列基板的方向上交叠。
6.根据权利要求1至5任一项所述的OLED阵列基板,其特征在于,所述金属走线包括:数据线;
所述OLED阵列基板还包括:与所述数据线同层设置的数据线保留图案;
所述金属导电层通过贯通所述绝缘层的第一通孔、第二通孔分别与所述驱动晶体管的源极、所述数据线保留图案相连接。
7.根据权利要求6所述的OLED阵列基板,其特征在于,所述OLED发光单元包括:依次远离衬底基板的第一电极、发光层、第二电极;
在所述金属导电层包括有第三公共电源供给线的情况下,所述OLED阵列基板还包括:覆盖所述金属导电层和所述绝缘层的层间绝缘层;
所述第一电极设置在所述层间绝缘层上。
8.根据权利要求1所述的OLED阵列基板,其特征在于,所述像素单元还包括:第一晶体管和第二晶体管,所述金属走线包括:数据线、栅线和检测补偿线;
所述第一晶体管的源极与所述数据线电连接、其漏极与所述驱动晶体管的栅极电连接、其栅极与所述栅线电连接;
所述驱动晶体管的源极与所述金属导电层电连接、其漏极与所述OLED发光单元的阳极和所述第二晶体管的源极电连接;
所述存储电容的一端与所述第一晶体管的漏极电连接、另一端与所述驱动晶体管的漏极电连接;所述OLED发光单元的阴极接地;
所述第二晶体管的栅极与所述检测补偿线电连接。
9.一种OLED阵列基板的制备方法,所述制备方法包括:形成多个像素单元和金属走线的步骤;形成的所述像素单元包括:OLED发光单元、驱动晶体管和存储电容;形成覆盖所述像素单元和所述金属走线的绝缘层的步骤;其特征在于,所述制备方法还包括:
在所述绝缘层上方形成与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠的金属导电层,所述金属导电层用于向所述像素单元提供公共电压。
10.根据权利要求9所述的制备方法,其特征在于,所述制备方法具体包括:
在衬底基板上形成驱动晶体管、存储电容以及金属走线;形成的所述金属走线包括:数据线;
形成与所述数据线同层设置的数据线保留图案;
形成覆盖所述驱动晶体管、所述存储电容以及所述金属走线的绝缘层;所述金属导电层通过贯通所述绝缘层的第一通孔、第二通孔分别与所述驱动晶体管的源极、所述数据线保留图案相连接;所述绝缘层上还形成有露出所述驱动晶体管的漏极的第三通孔;
在所述绝缘层上方形成第一电极和金属导电层;所述金属导电层与所述金属走线、所述驱动晶体管和所述存储电容中的至少一者在垂直于所述OLED阵列基板的方向上交叠,用于向所述像素单元提供公共电压;所述第一电极通过所述第三通孔与所述驱动晶体管的漏极相连接;
形成覆盖所述第一电极和所述金属导电层的像素界定层;
在所述像素界定层的开口部分形成发光层;
在所述发光层上形成第二电极;
其中,所述第一电极、所述发光层和所述第二电极构成OLED发光单元;所述OLED发光单元、所述驱动晶体管和所述存储电容构成所述像素单元。
11.根据权利要求10所述的制备方法,其特征在于,所述在所述绝缘层上方形成第一电极和金属导电层的步骤包括:
在绝缘层上形成金属导电层;形成的所述金属导电层包括:平行于所述数据线的第三公共电源供给线,所述第三公共电源供给线与所述数据线在垂直于所述OLED阵列基板的方向上交叠;
形成覆盖所述金属导电层的层间绝缘层;所述层间绝缘层上形成有与所述第三通孔贯通的第四通孔;
在所述层间绝缘层上形成第一电极;所述第一电极通过所述第四通孔和所述第三通孔与所述驱动晶体管的漏极相连接。
12.一种显示装置,其特征在于,包括如权利要求1至8任一项所述的OLED阵列基板。
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Also Published As
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US20180261663A1 (en) | 2018-09-13 |
WO2017206796A1 (zh) | 2017-12-07 |
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