JP5727784B2 - オプトエレクトロニクス部品の製造方法 - Google Patents
オプトエレクトロニクス部品の製造方法 Download PDFInfo
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- JP5727784B2 JP5727784B2 JP2010504442A JP2010504442A JP5727784B2 JP 5727784 B2 JP5727784 B2 JP 5727784B2 JP 2010504442 A JP2010504442 A JP 2010504442A JP 2010504442 A JP2010504442 A JP 2010504442A JP 5727784 B2 JP5727784 B2 JP 5727784B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007019776A DE102007019776A1 (de) | 2007-04-26 | 2007-04-26 | Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente |
| DE102007019776.6 | 2007-04-26 | ||
| PCT/DE2008/000704 WO2008131736A1 (de) | 2007-04-26 | 2008-04-25 | Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010525586A JP2010525586A (ja) | 2010-07-22 |
| JP2010525586A5 JP2010525586A5 (enExample) | 2012-01-12 |
| JP5727784B2 true JP5727784B2 (ja) | 2015-06-03 |
Family
ID=39590472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504442A Active JP5727784B2 (ja) | 2007-04-26 | 2008-04-25 | オプトエレクトロニクス部品の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8476644B2 (enExample) |
| EP (1) | EP2149160B1 (enExample) |
| JP (1) | JP5727784B2 (enExample) |
| KR (1) | KR101623986B1 (enExample) |
| CN (1) | CN101720513B (enExample) |
| DE (1) | DE102007019776A1 (enExample) |
| TW (1) | TWI385823B (enExample) |
| WO (1) | WO2008131736A1 (enExample) |
Families Citing this family (124)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102008032318A1 (de) | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen |
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| DE102008025756B4 (de) | 2008-05-29 | 2023-02-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiteranordnung |
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| KR101017395B1 (ko) | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| KR101557362B1 (ko) | 2008-12-31 | 2015-10-08 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| KR101533817B1 (ko) | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| DE102009019161A1 (de) * | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| DE102009019524B4 (de) | 2009-04-30 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem |
| DE102009022966A1 (de) | 2009-05-28 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Halbleiterchips |
| US9362459B2 (en) | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
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| KR101007077B1 (ko) * | 2009-11-06 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 그 제조방법 |
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| DE102009060747B4 (de) | 2009-12-30 | 2025-01-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
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| US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
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| TW200849677A (en) | 2008-12-16 |
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| KR20100016631A (ko) | 2010-02-12 |
| US20100117111A1 (en) | 2010-05-13 |
| KR101623986B1 (ko) | 2016-05-24 |
| TWI385823B (zh) | 2013-02-11 |
| WO2008131736A1 (de) | 2008-11-06 |
| US8476644B2 (en) | 2013-07-02 |
| EP2149160A1 (de) | 2010-02-03 |
| JP2010525586A (ja) | 2010-07-22 |
| CN101720513B (zh) | 2013-10-30 |
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