CN105849915B - 具有成形衬底的半导体发光器件和制造所述器件的方法 - Google Patents
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Abstract
本发明的实施例包括衬底(10)和生长在衬底上的半导体结构(12)。半导体结构包括设置在n型区(16)和p型区(20)之间的发光层(18)。衬底包括第一侧壁(30)和第二侧壁(32)。第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处。反射性层(34)设置在第一侧壁(30)之上。
Description
技术领域
本发明涉及可以具有改进的光提取的半导体发光器件。
背景技术
包括发光二极管(LED)、谐振腔发光二极管(RCLED)、垂直腔激光二极管(VCSEL)和边缘发射激光器的半导体发光器件是当前可得到的最高效的光源之一。在能够跨可见光谱操作的高亮度发光器件的制造中,当前感兴趣的材料系统包括III-V族半导体,特别是镓、铝、铟和氮的二元、三元和四元合金,其还被称为III族氮化物材料。典型地,III族氮化物发光器件通过以下来制作:通过金属-有机化学气相沉积(MOCVD)、分子束外延(MBE)或其它外延技术在蓝宝石、碳化硅、III族氮化物或其它合适衬底上外延生长不同组成和掺杂剂浓度的半导体层的堆叠。堆叠通常包括形成在衬底之上的掺杂有例如Si的一个或多个n型层、形成在一个或多个n型层之上的有源区中的一个或多个发光层、以及形成在有源区之上的掺杂有例如Mg的一个或多个p型层。电气接触件形成在n和p型区上。
图1图示了已知的LED。在生长衬底2上生长外延结构之后,金属接触件形成在外延结构上,并且器件相对于生长方向倒装并附连到底座5。在图1中,外延结构和金属接触件被示为块3。磷光体层4形成在衬底2之上。磷光体层4吸收由外延结构的发光层发射的光并且发射不同波长的光。透镜6设置在LED和底座5之上。
在图1中图示的器件中,从LED提取的大部分光是从衬底侧(如与外延结构侧相对)提取的。由发光层朝向金属接触件发射的光在离开结构之前可以部分地被反射性p接触件所反射。p接触件可以覆盖与衬底相对的外延结构表面的某个部分。磷光体一般在所有方向上发射光。由磷光体吸收并且以不同波长发射的一些光8被发射在透镜6的方向上。由磷光体吸收的一些光9被朝向外延结构3发射回来。由于外延结构3不是非常具有反射性的,因此光9可能被吸收,这降低图1的器件的效率。
发明内容
本发明的目的是提供一种可以减少由外延结构对光的吸收的器件。
本发明的实施例包括衬底和生长在衬底上的半导体结构。半导体结构包括设置在n型区和p型区之间的发光层。衬底包括第一侧壁和第二侧壁。第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处。反射性层设置在第一侧壁之上。
根据本发明的实施例的方法包括在衬底上生长半导体结构,该半导体结构包括设置在n型区和p型区之间的III族氮化物发光层。该方法还包括对衬底成形以形成第一侧壁和第二侧壁。第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处。反射性层形成在第一侧壁之上。
附图说明
图1图示了现有技术经磷光体转换的发光二极管。
图2图示了III族氮化物LED的一个示例。
图3图示了具有成形生长衬底的器件。
图4是在图3中图示的器件的截面视图。
图5图示了设置在反射性底座上的具有成形生长衬底和波长转换层的器件。
图6图示了设置在反射性底座上的具有成形生长衬底的两个器件。
图7图示了在图1中图示的结构的远场发射图案。
图8图示了在图6中图示的结构的远场发射图案。
图9是具有设置在底座中的成形开口中的成形生成衬底的器件的截面视图。
图10是具有成形生长衬底的器件的截面视图。
具体实施方式
在本发明的实施例中,对生长衬底成形以减少朝向外延结构定向的光的量。
尽管在以下示例中半导体发光器件是发射蓝光或UV光的III族氮化物LED,但是可以使用除LED之外的半导体发光器件,诸如激光二极管以及通过诸如其它III-V族材料、III族磷化物、III族砷化物、II-VI族材料、ZnO或基于Si的材料之类的其它材料系统所制得的半导体发光器件。
图2图示了可以在本发明的实施例中使用的III族氮化物LED。可以使用任何合适的半导体发光器件并且本发明的实施例不限于在图2中图示的器件。图2的器件通过在生长衬底10上生长III族氮化物半导体结构12而形成,如本领域中所已知的。生长衬底通常是蓝宝石,但是可以是任何合适的衬底,诸如例如非III族氮化物材料、蓝宝石、SiC、Si、GaN或复合衬底。在其上生长III族氮化物半导体结构的生长衬底的表面可以在生长之前被图案化、粗糙化或纹理化,其可以改进到衬底中的光提取。
半导体结构包括夹在n和p型区之间的发光或有源区。n型区16可以首先生长并且可以包括不同组成和掺杂剂浓度的多个层,包括例如诸如缓冲层或成核层之类的准备层,其可以是n型或非有意掺杂的,以及设计用于得到对于使发光区高效地发射光而言合期望的特定光学、材料或电气性质的n或甚至p型器件层。发光或有源区18生长在n型区之上。合适的发光区的示例包括单个厚或薄发光层,或者包括通过屏障层分离的多个薄或厚发光层的多量子阱发光区。p型区20然后可以生长在发光区之上。类似于n型区,p型区可以包括不同组成、厚度和掺杂剂浓度的多个层,包括非有意掺杂的层,或者n型层。
在生长之后,在p型区的表面上形成p接触件。p接触件21通常包括多个传导层,诸如反射金属和防护金属,其可以防止或减少反射金属的电迁移。反射金属通常是银,但是可以使用任何合适的一种或多种材料。在形成p接触件21之后,移除部分的p接触件21、p型区20和有源区18以暴露在其上形成n接触件22的n型区16的部分。n和p接触件22和21通过间隙25从彼此电气隔离,间隙25可以填充有电介质,诸如硅的氧化物或者任何其它合适的材料。可以形成多个n接触件通孔;n和p接触件22和21不限于图2中所图示的布置。n和p接触件可以重分布以形成具有电介质/金属堆叠的键合垫,如本领域中所已知的。
为了形成到LED的电气连接,一个或多个互连26和28形成在n和p接触件22和21上或者电气连接到它们。在图2中,互连26电气连接到n接触件22。互连28电气连接到p接触件21。互连26和28通过电介质层24和间隙27与n和p接触件22和21并且与彼此电气隔离。互连26和28可以例如是焊料、柱状凸块、金层或者任何其它合适的结构。许多单独的LED形成在单个生长衬底晶片上,然后从器件的晶片切分。半导体结构、n和p接触件22和21以及互连26和28在以下图中由块12表示。
图3图示了根据本发明的实施例的具有成形生长衬底的器件。图4是在图3中图示的器件的截面视图。在图3中图示的器件可以从生长衬底晶片切分使得外延结构12是矩形。沿矩形外延结构12的一个长边,生长衬底10被成形为基本上竖直的侧壁30。沿矩形外延结构12的另一长边,生长衬底10被成形为倾斜侧壁32。倾斜侧壁32可以倾斜使得其在生长衬底10的顶部处的顶点33处基本上与竖直侧壁30相遇。在图4中图示的截面中,竖直侧壁30和倾斜侧壁32形成具有60°的角度35的直角三角形。三角形的角度35可以在一些实施例中为至少50°并且在一些实施例中小于或等于70°。沿矩形外延结构的短边,生长衬底10可以具有基本上竖直的侧壁36使得衬底10形成三棱柱。衬底不限于在图3和4中图示的直角三角形形状,并且可以成形为任何合适的形状和截面,包括例如几何形状,诸如梯形棱柱、除直角三角形之外的其它三角形、任何种类的棱柱和拟柱体。棱柱是具有n边形基底的多面体,基底的平移副本不处于与基底相同的平面中,并且n个其它面(必要地所有平行四边形)连结基底的平移副本和基底的对应边。所有平行于基底面的截面都相同。棱柱以其基底而命名,因此具有五边形基底的棱柱被称为五棱柱。拟柱体是其中所有顶点位于两个平行平面中的多面体。
竖直侧壁30可以覆盖有高度反射性的材料34。竖直侧壁36可以覆盖有反射性材料,诸如高度反射性的材料34或不同的材料。可以使用任何(多种)合适的反射性材料,诸如例如反射性漆、诸如Ag或Al之类的反射性金属、电介质材料或白色漫射器。在一些实施例中,结构12的所有或一些侧壁涂敷有高度反射性的材料。通过具有最大面积的侧壁,在图3和4中图示的实施例中倾斜侧壁32,从衬底提取光。
根据本发明的实施例成形的生长衬底可以厚于常规器件中的生长衬底,诸如在图1中图示的器件。例如,图3和4中的生长衬底10可以在一些实施例中为至少300μm厚,在一些实施例中不多于1000μm厚,在一些实施例中至少500μm厚,并且在一些实施例中不多于800μm厚。
衬底10可以通过任何合适的方法来成形。例如,基本上竖直的侧壁30和36可以通过从生长衬底晶片切分器件而形成。倾斜侧壁32可以通过任何合适的技术来形成,诸如例如蚀刻、碾磨、激光划切、烧蚀、或子表面划切和断裂(有时称为“隐形”切分或切割)。在一些实施例中,器件12在倾斜侧壁32的形成期间受保护,例如通过为其覆盖处置带或任何其它合适的材料或技术。在一些实施例中,倾斜侧壁32可以在衬底10上生长半导体结构之后形成。倾斜侧壁32可以在从生长衬底晶片切分器件之前或之后形成。在一些实施例中,衬底10在形成倾斜侧壁32之前减薄。
图5图示了具有成形生长衬底和波长转换层的器件。波长转换层40形成在倾斜侧壁32上,倾斜侧壁32是从其提取光的衬底10的表面。波长转换层40可以例如是例如通过烧结形成到陶瓷中,然后胶合到衬底10的波长转换层材料,或者是通过任何合适的方法(包括例如模制、层压、电泳沉积、旋涂、喷涂、丝网印刷或滴涂)设置在衬底上的混合有诸如硅树脂、玻璃或环氧树脂之类的透明材料的波长转换材料。波长转换层40通常在50和100μm厚之间,尽管其可以是对于所使用的特定波长转换材料和用于形成波长转换层的特定方法而言适当的任何厚度。
波长转换层40中的波长转换材料可以是例如常规磷光体、有机磷光体、量子点、有机半导体、II-VI族或III-V族半导体、II-VI族或III-V族半导体量子点或纳米晶体、染料、聚合物或其它发光材料。波长转换材料吸收由LED发射的光并且发射一个或多个不同波长的光。由LED发射的未经转换的光通常是从结构提取的光的最终光谱的部分,尽管其不需要如此。常见组合的示例包括与发射黄色的波长转换材料组合的发射蓝色的LED、与发射红色和绿色的波长转换材料组合的发射蓝色的LED、与发射蓝色和黄色的波长转换材料组合的发射UV的LED、以及与发射蓝色、绿色和红色的波长转换材料组合的发射UV的LED。可以添加发射其它颜色的光的波长转换材料以定制从结构发射的光的光谱。
如由射线46所图示的,由波长转换层40发射到衬底10中的光可以被反射性涂层34反射,然后朝向波长转换层40发射,其中光可以从器件逸出。由波长转换层40发射到衬底10中的光46不太可能遭遇图5的器件中的半导体结构12,这与图1的器件相对,在图1的器件中,由磷光体发射到衬底中的大量光被欠佳的反射性外延结构所吸收。因而,对生长衬底成形可以通过减少由波长转换层40生成的被半导体结构吸收的光的量而增加器件的提取效率。
在一些实施例中,具有成形生长衬底的器件设置在反射性底座上,如图5中所示。反射性底座42可以由诸如反射性金属之类的反射性材料形成,或者可以是具有反射性顶表面44的任何合适的材料。顶表面可以通过例如为表面涂敷诸如Ag或Al之类的反射性金属、反射性漆或任何其它合适的材料而成为反射性的。
由于在图3,4和5中图示的器件通过衬底10的单个侧壁(倾斜侧壁32)发射光,因此光发射不对称,如在图1的器件中那样。图6图示了其中图5中所图示的器件中的两个背对背设置在反射性底座42上的配置。左侧器件50和右侧器件52的竖直侧壁30上的反射性涂层34彼此相邻设置。来自左侧器件50的光大部分发射在方向51上。来自右侧器件52的光大部分发射在方向53上。
图7图示了来自图1中所图示的器件的远场发射图案。图1的发射图案是基本上对称的朗伯图案。图8图示了来自图6中所图示的器件的远场发射图案。图6的结构在两个波瓣中反射光,来自左侧器件50的波瓣51A和来自右侧器件52的波瓣53A。相比于图1的器件,图6的结构从结构的侧面提取大幅更多的光,而图1的器件从结构的顶部提取大幅更多的光。在图6中图示的结构在不要求定向性而是偏好显著侧面发射的照明应用中可以是有益的,例如以增强光漫射。
图9图示了可以适合用于要求光发射的定向性的应用的实施例。在图9的器件中,腔体或开口66形成在底座64中。腔体66成形为容纳具有成形生长衬底10的器件,诸如在图3中图示的器件。腔体66的形状可以基本上与器件的形状相同。例如,腔体66可以成形为使得侧壁32基本上平行于底座64的表面之一。在一些实施例中,腔体66可以成形为使得侧壁32与底座64的表面重合,或插入以容纳波长转换构件。在可替换方案中,腔体66可以成形为使得侧壁32突出在底座64的表面上方。
涂敷有反射性材料34的衬底10的侧壁30设置成接近腔体66。在一些实施例中,腔体66的内表面中的一个或多个是反射性的,使得分离的反射性材料层34可以省略。同样地,如果腔体66的内表面中的一个或多个是反射性的,则分离的反射性材料层可以从侧壁36省略。从其提取光的侧壁32设置成基本上与底座64的顶表面齐平(如在该上下文中使用的,底座64的“顶”表面是指腔体从其延伸的表面)。可以例如为发光陶瓷或任何其它合适的材料的波长转换构件60可以通过诸如硅树脂、环氧树脂、玻璃或任何其它合适材料之类的透明粘合层62而附连到侧壁32。反射性材料68可以设置在波长转换构件60周围。在图9中图示的结构发射与图1中所图示的结构类似的远场图案。通过图9中所图示的取向中的结构的顶部而从结构提取大部分光。
在一些实施例中,围绕图9的器件中的波长转换构件60和/或底座64的反射性层68可以由传导热量的材料制成。底座可以由任何合适的材料制成,诸如例如金属、陶瓷、AlN或二氧化硅。在一些实施例中,底座的表面涂敷有任何合适的反射性材料(在图9中未示出),包括例如银金属。反射性层68可以例如是任何合适的材料,诸如白色反射体膏。底座64和/或反射性层68可以从LED和/或波长转换构件60传导开热量,这可以增加结构的效率和/或改进器件的寿命。
衬底10的形状不限于在图3,4,5,6和9中图示的形状。图10图示了根据本发明的实施例的成形衬底10的截面。半导体结构12的平面70在图10中图示。在图4的器件中,在其上设置反射性层的侧壁30与平面70的等效物形成直角。从其提取光的侧壁32与平面70的等效物形成锐角35。图4的衬底10具有四个侧壁并且没有其它表面。从侧壁32提取光,侧壁32是具有最大面积的侧壁。
在图10中,在其上设置反射性层的侧壁30与平面70形成锐角72。从其提取光的侧壁32与平面70形成锐角74。锐角74小于锐角72(即,侧壁30比侧壁32更接近竖直)。换言之,相比侧壁32,侧壁30布置在相对于主平面70的不同角度处(这也是针对图4的器件的情况)。如在图4中,在图10的器件中,从侧壁32提取光。在一些实施例中,从其提取光的侧壁是具有最大面积的侧壁。
在图10中图示的衬底还具有顶表面76。顶表面76可以涂敷有反射性层。反射性层类似于或等同于以上描述的那些。很少或没有光通过顶表面76从衬底提取。在图10中图示的衬底具有顶表面和四个侧壁,彼此相对的两个长侧壁30和32,以及彼此相对的两个短侧壁36。短侧壁36可以竖直或者以相对于主平面70的锐角成角度。侧壁32的面积大于顶表面76的面积。侧壁30和36以及顶表面76可以涂敷有反射性层。波长转换层可以设置在侧壁32上,如上文所述。
在一些实施例中,附加于或替代于涂敷有反射性材料,衬底的反射性侧壁可以被纹理化,例如通过以随机或重复图案来粗糙化或图案化,以朝向通过其从衬底提取光的侧壁32散射和/或引导光。
已经详细地描述了本发明,本领域技术人员将领会的是,在给定本公开内容的情况下,可以对本发明做出修改而不脱离本文描述的发明概念的精神。因此,不意图将本发明的范围限于所图示和描述的具体实施例。
Claims (13)
1.一种发光器件,包括:
衬底;以及
设置在衬底上的半导体结构,半导体结构包括设置在n型区和p型区之间的发光层;
其中:
衬底包括第一侧壁和第二侧壁;
第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处;
第一侧壁与半导体结构的主表面形成直角;并且
反射性层设置在第一侧壁之上,
其中通过第二侧壁从衬底提取光,并且
其中第二侧壁与半导体结构的主表面形成锐角。
2.权利要求1所述的发光器件,其中第二侧壁具有比第一侧壁大的面积。
3.权利要求1所述的发光器件,其中半导体结构包括第一长边、第二长边以及连接第一和第二长边的短边,其中第一侧壁沿第一长边设置并且第二侧壁沿第二长边设置。
4.权利要求1所述的发光器件,其中衬底具有至少500μm的厚度。
5.权利要求1所述的发光器件,还包括设置在第二侧壁之上的波长转换层。
6.权利要求1所述的发光器件,其中衬底和半导体结构设置在底座中的腔体中,其中腔体成形为容纳衬底和半导体结构,并且其中第二侧壁与底座的顶表面平行。
7.权利要求6所述的发光器件,还包括:
设置在第二侧壁之上的波长转换层;以及
围绕波长转换层的底座的顶表面上所设置的反射性层。
8.权利要求1所述的发光器件,其中衬底和半导体衬底是第一衬底和第一半导体结构,器件还包括:
第二衬底;以及
设置在第二衬底上的第二半导体结构,第二半导体结构包括设置在n型区和p型区之间的发光层;
其中:
第二衬底包括第一侧壁和第二侧壁;
第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处;并且
第一衬底的第一侧壁面向第二衬底的第一侧壁。
9.权利要求1所述的发光器件,其中第一侧壁被纹理化。
10.权利要求1所述的发光器件,其中第一和第二侧壁形成拟柱体的部分。
11.一种制造发光器件的方法,包括:
在衬底上生长半导体结构,半导体结构包括设置在n型区和p型区之间的III族氮化物发光层;
对衬底成形以形成第一侧壁和第二侧壁,其中第一侧壁和第二侧壁设置在相对于半导体结构的主表面的不同角度处,其中第一侧壁与半导体结构的主表面形成直角,第二侧壁与半导体结构的主表面形成锐角,并且通过第二侧壁从衬底提取光;以及
在第一侧壁之上形成反射性层。
12.权利要求11所述的制造发光器件的方法,其中成形包括在生长半导体结构之后蚀刻衬底。
13.权利要求11所述的制造发光器件的方法,还包括纹理化第一侧壁。
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JP2017501588A (ja) | 2017-01-12 |
WO2015101854A1 (en) | 2015-07-09 |
KR102307081B1 (ko) | 2021-10-05 |
TWI644457B (zh) | 2018-12-11 |
TW201533933A (zh) | 2015-09-01 |
KR20160106151A (ko) | 2016-09-09 |
US20160329464A1 (en) | 2016-11-10 |
JP6628727B2 (ja) | 2020-01-15 |
EP3092663A1 (en) | 2016-11-16 |
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US10090436B2 (en) | 2018-10-02 |
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