DE102007019776A1 - Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente - Google Patents

Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente Download PDF

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Publication number
DE102007019776A1
DE102007019776A1 DE102007019776A DE102007019776A DE102007019776A1 DE 102007019776 A1 DE102007019776 A1 DE 102007019776A1 DE 102007019776 A DE102007019776 A DE 102007019776A DE 102007019776 A DE102007019776 A DE 102007019776A DE 102007019776 A1 DE102007019776 A1 DE 102007019776A1
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Prior art keywords
semiconductor body
layer
component
contacts
carrier
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DE102007019776A
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German (de)
English (en)
Inventor
Stefan Dr. Illek
Andreas Dr. Plößl
Alexander Heindl
Patrick Rode
Dieter Dr. Eissler
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to DE102007019776A priority Critical patent/DE102007019776A1/de
Priority to JP2010504442A priority patent/JP5727784B2/ja
Priority to TW097115246A priority patent/TWI385823B/zh
Priority to CN200880022464.5A priority patent/CN101720513B/zh
Priority to EP08748777.3A priority patent/EP2149160B1/de
Priority to KR1020097023960A priority patent/KR101623986B1/ko
Priority to PCT/DE2008/000704 priority patent/WO2008131736A1/de
Priority to US12/597,682 priority patent/US8476644B2/en
Publication of DE102007019776A1 publication Critical patent/DE102007019776A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE102007019776A 2007-04-26 2007-04-26 Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente Withdrawn DE102007019776A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102007019776A DE102007019776A1 (de) 2007-04-26 2007-04-26 Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
JP2010504442A JP5727784B2 (ja) 2007-04-26 2008-04-25 オプトエレクトロニクス部品の製造方法
TW097115246A TWI385823B (zh) 2007-04-26 2008-04-25 光電組件及製造複數個光電組件之方法
CN200880022464.5A CN101720513B (zh) 2007-04-26 2008-04-25 光电子器件和用于制造多个光电子器件的方法
EP08748777.3A EP2149160B1 (de) 2007-04-26 2008-04-25 Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente
KR1020097023960A KR101623986B1 (ko) 2007-04-26 2008-04-25 광전 소자，및 복수 개의 광전 소자들의 제조 방법
PCT/DE2008/000704 WO2008131736A1 (de) 2007-04-26 2008-04-25 Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente
US12/597,682 US8476644B2 (en) 2007-04-26 2008-04-25 Optoelectronic component and method for the manufacture of a plurality of optoelectronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007019776A DE102007019776A1 (de) 2007-04-26 2007-04-26 Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente

Publications (1)

Publication Number Publication Date
DE102007019776A1 true DE102007019776A1 (de) 2008-10-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007019776A Withdrawn DE102007019776A1 (de) 2007-04-26 2007-04-26 Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente

Country Status (8)

Country Link
US (1) US8476644B2 (enExample)
EP (1) EP2149160B1 (enExample)
JP (1) JP5727784B2 (enExample)
KR (1) KR101623986B1 (enExample)
CN (1) CN101720513B (enExample)
DE (1) DE102007019776A1 (enExample)
TW (1) TWI385823B (enExample)
WO (1) WO2008131736A1 (enExample)

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WO2010077571A1 (en) * 2008-12-08 2010-07-08 Cree, Inc. Light emitting diode with improved light extraction
DE102009022966A1 (de) 2009-05-28 2010-12-02 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Halbleiterchips
WO2010125028A3 (de) * 2009-04-30 2011-04-07 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterkörper mit einem reflektierenden schichtsystem
EP2315273A1 (en) * 2009-10-22 2011-04-27 LG Innotek Co., Ltd. Light emitting device and light emitting device package
EP2320483A1 (en) * 2009-11-06 2011-05-11 LG Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
EP2393132A3 (en) * 2010-06-07 2011-12-21 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8461616B2 (en) 2008-05-29 2013-06-11 Osram Opto Semiconductors Gmbh Semiconductor arrangement
WO2014012760A1 (de) * 2012-07-16 2014-01-23 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
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US8928052B2 (en) 2008-03-31 2015-01-06 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing same
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JP2015216389A (ja) * 2009-05-11 2015-12-03 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 反射構造を有する半導体発光ダイオードおよびその製造方法
WO2016008805A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauteils und optoelektronisches halbleiterbauteil
WO2016120398A1 (en) * 2015-01-30 2016-08-04 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and semiconductor component
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
JP2016225609A (ja) * 2015-05-28 2016-12-28 日亜化学工業株式会社 発光素子及びその製造方法
EP2325905B1 (en) * 2009-11-19 2017-01-11 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing same
US9705058B2 (en) 2013-05-29 2017-07-11 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic semiconductor chips, and optoelectronic semiconductor chip
US9721940B2 (en) 2013-10-01 2017-08-01 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip and method of producing radiation-emitting semiconductor chips
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
EP2374163B1 (en) * 2008-12-08 2022-02-02 CreeLED, Inc. Led with a composite high reflectivity layer
DE102022115644A1 (de) 2022-06-23 2023-12-28 Ams-Osram International Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
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KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
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DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
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DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
US9105824B2 (en) * 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
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JP5356312B2 (ja) 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
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