JP5708493B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5708493B2 JP5708493B2 JP2011540372A JP2011540372A JP5708493B2 JP 5708493 B2 JP5708493 B2 JP 5708493B2 JP 2011540372 A JP2011540372 A JP 2011540372A JP 2011540372 A JP2011540372 A JP 2011540372A JP 5708493 B2 JP5708493 B2 JP 5708493B2
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Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係る半導体装置を示す断面図である。
beam epitaxy)法を用いてもよい。触媒膜2として、酸化鉄(FeO及びFe2O3)、塩化鉄(Fe2Cl3)、及びコバルト鉄(CoFe)等の鉄を含む化合物又は合金の膜を形成してもよい。また、触媒膜2として、ニッケル(Ni)、コバルト(Co)、白金(Pt)、金(Au)、又は銅(Cu)の膜を形成してもよく、Ni、Co、Pt、Au、Cuを含む化合物又は合金の膜を形成してもよい。触媒膜2の厚さは特に限定されないが、50nm〜1000nmであることが好ましく、100nm〜500nmであることがより好ましい。
次に、第2の実施形態について説明する。図5は、第2の実施形態に係る半導体装置を示す断面図である。
次に、第3の実施形態について説明する。図7は、第3の実施形態に係る半導体装置を示す断面図である。
次に、第4の実施形態について説明する。図9は、第4の実施形態に係る半導体装置を示す断面図である。
次に、第5の実施形態について説明する。図19は、第5の実施形態に係る半導体装置を示す断面図である。
次に、第6の実施形態について説明する。図21は、第6の実施形態に係る半導体装置を示す断面図である。
次に、第7の実施形態について説明する。第7の実施形態では、電界効果トランジスタ及び配線を並行して形成する。図24A乃至図24Eは、第7の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。
以下、本発明の諸態様を付記としてまとめて記載する。
(付記1)
絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
を含むことを特徴とする半導体装置の製造方法。
(付記2)
前記触媒膜を除去する工程と、
前記グラフェン層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にトップゲート電極を形成する工程と、
を含むことを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)
前記触媒膜を除去する工程と、
前記絶縁体と前記グラフェン層との間にゲート絶縁膜を形成する工程と、
前記グラフェン層との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする付記1に記載の半導体装置の製造方法。
(付記4)
前記グラフェン層を薄化する工程を含むことを特徴とする付記1に記載の半導体装置の製造方法。
(付記5)
前記触媒膜を除去する工程と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分を前記導電膜の他方に位置する第2の部分よりも薄化する工程と、
前記第1の部分上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にトップゲート電極を形成する工程と、
を含むことを特徴とする付記1に記載の半導体装置の製造方法。
(付記6)
前記触媒膜を除去する工程と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分を前記導電膜の他方に位置する第2の部分よりも薄化する工程と、
前記絶縁体と前記前記第1の部分との間にゲート絶縁膜を形成する工程と、
前記第1の部分との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする付記1に記載の半導体装置の製造方法。
(付記7)
前記グラフェン層を前記触媒膜の上面及び下面の両方から成長させることを特徴とする付記1に記載の半導体装置の製造方法。
(付記8)
前記触媒膜を除去する工程と、
前記グラフェン層の前記触媒膜の上面又は下面の一方から成長した部分の一部を除去する工程と、
前記グラフェン層の前記触媒膜の上面又は下面の他方から成長した部分上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にトップゲート電極を形成する工程と、
を含むことを特徴とする付記7に記載の半導体装置の製造方法。
(付記9)
前記触媒膜を除去する工程と、
前記グラフェン層の前記触媒膜の上面又は下面の一方から成長した部分の一部を除去する工程と、
前記絶縁体と前記グラフェン層の前記触媒膜の上面又は下面の他方から成長した部分との間にゲート絶縁膜を形成する工程と、
前記グラフェン層との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする付記7に記載の半導体装置の製造方法。
(付記10)
ソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極により懸架されたグラフェン層を含むチャネルと、
前記グラフェン層のバンド構造を変化させるゲート電極と、
前記ゲート電極と前記チャネルとの間に形成されたゲート絶縁膜と、
を有することを特徴とする半導体装置。
(付記11)
前記ソース電極及び前記ドレイン電極は絶縁体上に形成されており、
前記チャネルは前記絶縁体から離間して形成されていることを特徴とする付記10に記載の半導体装置。
(付記12)
前記グラフェン層は前記ソース電極及び前記ドレイン電極よりも前記チャネルから離間する方向に延びており、
前記チャネルは、前記グラフェン層の前記ソース電極及び前記ドレイン電極よりも前記チャネルから離間する方向に延びた部分よりも薄いことを特徴とする付記10に記載の半導体装置。
(付記13)
2個の導電膜と、
前記2個の導電膜により懸架されたグラフェン層を含む配線と、
を有することを特徴とする半導体装置。
(付記14)
前記2個の導電膜は絶縁体上に形成されており、
前記配線は前記絶縁体から離間して形成されていることを特徴とする付記13に記載の半導体装置。
Claims (12)
- 絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
前記触媒膜を除去する工程と、
前記絶縁体と前記グラフェン層との間にゲート絶縁膜を形成する工程と、
前記グラフェン層との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記導電膜を形成する工程は、前記グラフェン層に接するソース電極及びドレイン電極を形成する工程を有し、
前記グラフェン層のうちで前記ソース電極と前記ドレイン電極との間に位置する部分を薄化する工程を含むことを特徴とする請求項1に記載の半導体装置の製造方法。 - 絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
前記触媒膜を除去する工程と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分を前記導電膜の他方に位置する第2の部分よりも薄化する工程と、
前記第1の部分上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にトップゲート電極を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
前記触媒膜を除去する工程と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分を前記導電膜の他方に位置する第2の部分よりも薄化する工程と、
前記絶縁体と前記第1の部分との間にゲート絶縁膜を形成する工程と、
前記第1の部分との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
を含む、前記グラフェン層をチャネル材料に用いた電界効果トランジスタを有する半導体装置の製造方法であって、
前記グラフェン層を前記触媒膜の上面及び下面の両方から成長させることを特徴とする半導体装置の製造方法。 - 前記触媒膜を除去する工程と、
前記グラフェン層の前記触媒膜の上面又は下面の一方から成長した部分の一部を除去する工程と、
前記グラフェン層の前記触媒膜の上面又は下面の他方から成長した部分上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にトップゲート電極を形成する工程と、
を含むことを特徴とする請求項5に記載の半導体装置の製造方法。 - 前記触媒膜を除去する工程と、
前記グラフェン層の前記触媒膜の下面から成長した部分の一部を除去する工程と、
前記絶縁体と前記グラフェン層の前記触媒膜の上面から成長した部分との間にゲート絶縁膜を形成する工程と、
前記グラフェン層との間で前記ゲート絶縁膜を挟む位置にバックゲート電極を形成する工程と、
を含むことを特徴とする請求項5に記載の半導体装置の製造方法。 - 絶縁体上に触媒膜を形成する工程と、
前記触媒膜を起点としてグラフェン層を成長させる工程と、
前記グラフェン層に接する導電膜を前記絶縁体上に形成する工程と、
を含む、前記グラフェン層を配線材料に用いた半導体装置の製造方法であって、
前記グラフェン層を前記触媒膜の上面及び下面の両方から成長させることを特徴とする半導体装置の製造方法。 - 前記触媒膜を形成する工程は、
第1のCo膜を形成する工程と、
前記第1のCo膜上にTiN膜を形成する工程と、
前記TiN膜上に第2のCo膜を形成する工程と、
を有することを特徴とする請求項5乃至8のいずれか1項に記載の半導体装置の製造方法。 - 絶縁体上に形成されたソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極に接続されたグラフェン層を含むチャネルと、
前記絶縁体と前記グラフェン層との間で、前記ソース電極及び前記ドレイン電極の側方に形成されたゲート絶縁膜と、
前記グラフェン層との間で前記ゲート絶縁膜を挟む位置に形成されたバックゲート電極と、
前記ソース電極と前記ドレイン電極との間で前記グラフェン層上に形成された第2のゲート絶縁膜と、
前記第2のゲート絶縁膜上に形成されたトップゲート電極と、
を有することを特徴とする半導体装置。 - 導電膜と、
前記導電膜に接続されたグラフェン層と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたトップゲート電極と、
を有し、
前記グラフェン層の前記第1の部分は、前記グラフェン層の前記導電膜の他方に位置する第2の部分よりも薄いことを特徴とする半導体装置。 - 絶縁体上に形成された導電膜と、
前記導電膜に接続されたグラフェン層と、
前記グラフェン層の前記導電膜の一方に位置する第1の部分と前記絶縁体との間に形成されたゲート絶縁膜と、
前記第1の部分との間で前記ゲート絶縁膜を挟む位置に形成されたバックゲート電極と、
を有し、
前記グラフェン層の前記第1の部分は、前記グラフェン層の前記導電膜の他方に位置する第2の部分よりも薄いことを特徴とする半導体装置。
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Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101251020B1 (ko) * | 2010-03-09 | 2013-04-03 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 태양전지 및 염료감응 태양전지 |
EP2602830A4 (en) * | 2010-08-05 | 2017-03-22 | Fujitsu Limited | Method for manufacturing semiconductor device and method for growing graphene |
JP2012144415A (ja) * | 2010-12-21 | 2012-08-02 | Meijo Univ | グラフェン素材の製造方法及びグラフェン素材 |
KR101813176B1 (ko) * | 2011-04-07 | 2017-12-29 | 삼성전자주식회사 | 그래핀 전자 소자 및 제조방법 |
KR101813179B1 (ko) * | 2011-06-10 | 2017-12-29 | 삼성전자주식회사 | 복층의 게이트 절연층을 구비한 그래핀 전자 소자 |
KR101878751B1 (ko) * | 2011-06-27 | 2018-07-17 | 삼성전자주식회사 | 그래핀 구조체 및 그 제조방법과, 그래핀 소자 및 그 제조방법 |
JP5857659B2 (ja) * | 2011-11-17 | 2016-02-10 | 株式会社デンソー | 半導体素子の製造方法 |
JP5978600B2 (ja) * | 2011-11-21 | 2016-08-24 | 富士通株式会社 | 半導体装置の製造方法 |
US8633055B2 (en) * | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
JP5870758B2 (ja) * | 2012-02-28 | 2016-03-01 | 富士通株式会社 | 電子デバイス及びその製造方法 |
JP5668009B2 (ja) * | 2012-03-26 | 2015-02-12 | 株式会社東芝 | 配線及び半導体装置 |
CN103359719B (zh) * | 2012-04-05 | 2015-01-21 | 清华大学 | 石墨烯纳米窄带的制备方法 |
CN103377887B (zh) * | 2012-04-24 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 场效应晶体管及其制作方法 |
JP5910294B2 (ja) * | 2012-05-10 | 2016-04-27 | 富士通株式会社 | 電子装置及び積層構造体の製造方法 |
CN103531618B (zh) * | 2012-07-05 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种双栅鳍型场效应晶体管及其制造方法 |
US8519450B1 (en) * | 2012-08-17 | 2013-08-27 | International Business Machines Corporation | Graphene-based non-volatile memory |
JP5972735B2 (ja) * | 2012-09-21 | 2016-08-17 | 株式会社東芝 | 半導体装置 |
JP6201322B2 (ja) * | 2013-01-18 | 2017-09-27 | 富士通株式会社 | 電子デバイス及びその製造方法、並びに基板構造及びその製造方法 |
JP6195266B2 (ja) | 2013-05-01 | 2017-09-13 | 富士通株式会社 | 電子装置の製造方法 |
SG11201510807VA (en) * | 2013-05-01 | 2016-02-26 | Koninkl Philips Nv | Method of manufacturing a partially freestanding graphene crystal film and device comprising such a film |
CN103745994A (zh) * | 2013-12-24 | 2014-04-23 | 上海新傲科技股份有限公司 | 采用石墨烯的场效应晶体管及其制备方法 |
WO2015126139A1 (en) * | 2014-02-19 | 2015-08-27 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
WO2015191089A1 (en) * | 2014-06-13 | 2015-12-17 | Intel Corporation | Graphene fluorination for integration of graphene with insulators and devices |
CN104300008B (zh) * | 2014-10-30 | 2017-06-30 | 京东方科技集团股份有限公司 | 一种电极结构、薄膜晶体管、阵列基板及显示面板 |
DE102014222749B3 (de) * | 2014-11-07 | 2015-12-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Kontaktstruktur zwischen einem Kantenabschnitt eines 2D-Materials und einem Metall |
US9508801B2 (en) * | 2015-01-08 | 2016-11-29 | International Business Machines Corporation | Stacked graphene field-effect transistor |
KR102455433B1 (ko) * | 2015-07-03 | 2022-10-17 | 삼성전자주식회사 | 수직 정렬된 2차원 물질을 포함하는 소자 및 수직 정렬된 2차원 물질의 형성방법 |
US20170090278A1 (en) * | 2015-09-30 | 2017-03-30 | G-Force Nanotechnology Ltd. | Euv pellicle film and manufacturing method thereof |
FR3045826A1 (fr) * | 2015-12-17 | 2017-06-23 | Commissariat Energie Atomique | Supports amplificateurs de contraste utilisant un materiau bidimensionnel |
JP6666168B2 (ja) * | 2016-02-26 | 2020-03-13 | 住友電気工業株式会社 | 電子装置およびその製造方法 |
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
CN107887333B (zh) * | 2016-09-30 | 2020-07-31 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
US10153159B1 (en) * | 2017-11-30 | 2018-12-11 | International Business Machines Corporation | Source and drain formation using self-aligned processes |
US10256306B1 (en) * | 2017-11-30 | 2019-04-09 | International Business Machines Corporation | Vertically integrated multispectral imaging sensor with graphene as electrode and diffusion barrier |
SE541523C2 (en) | 2018-04-03 | 2019-10-29 | Graphensic Ab | Electrical contacts for low dimensional materials |
US10580886B2 (en) | 2018-05-29 | 2020-03-03 | International Business Machines Corporation | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly |
US10593798B2 (en) | 2018-08-05 | 2020-03-17 | International Business Machines Corporation | Vertical transistor with one atomic layer gate length |
US10586864B2 (en) * | 2018-08-05 | 2020-03-10 | International Business Machines Corporation | Vertical transistor with one-dimensional edge contacts |
CN109979995A (zh) * | 2019-04-10 | 2019-07-05 | 电子科技大学 | 一种新型的栅极抽取和注入场效应晶体管结构 |
JP7476724B2 (ja) | 2020-08-24 | 2024-05-01 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
CN112538611B (zh) * | 2020-12-02 | 2022-07-22 | 北海惠科光电技术有限公司 | 石墨烯碳纳米管复合膜及其制备方法以及薄膜晶体管阵列 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008023669A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | Nanomatériau carboné semi-conducteur du type n, son procédé de production et procédé de fabrication d'un dispositif semi-conducteur |
JP2009143761A (ja) * | 2007-12-13 | 2009-07-02 | Fujitsu Ltd | グラフェンシートの製造方法、半導体装置の製造方法および半導体装置 |
JP2009164432A (ja) * | 2008-01-08 | 2009-07-23 | Fujitsu Ltd | 半導体装置の製造方法、半導体装置および配線構造体 |
JP2009234815A (ja) * | 2008-03-26 | 2009-10-15 | Fujitsu Ltd | グラフェンシート系材料の処理方法及び装置 |
JP2009252798A (ja) * | 2008-04-01 | 2009-10-29 | Mitsumi Electric Co Ltd | カーボンナノチューブ電界効果トランジスタおよびその製造方法 |
WO2011021715A1 (ja) * | 2009-08-20 | 2011-02-24 | 日本電気株式会社 | 基板、基板の製造方法、半導体素子および半導体素子の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3000035B2 (ja) | 1993-03-24 | 2000-01-17 | 科学技術振興事業団 | グラファイト薄膜の形成方法 |
JP3044683B2 (ja) | 1995-03-17 | 2000-05-22 | 科学技術振興事業団 | グラファイト層の形成方法、該方法によって形成されたグラファイト層を有するx線光学素子及びx線光学素子の製造方法 |
DE69623550T2 (de) | 1995-07-10 | 2003-01-09 | Japan Res Dev Corp | Verfahren zur Herstellung von Graphitfasern |
JP2973352B2 (ja) | 1995-07-10 | 1999-11-08 | 科学技術振興事業団 | グラファイトファイバーの作成方法 |
US7619257B2 (en) * | 2006-02-16 | 2009-11-17 | Alcatel-Lucent Usa Inc. | Devices including graphene layers epitaxially grown on single crystal substrates |
US7968885B2 (en) * | 2007-08-07 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP5244364B2 (ja) * | 2007-10-16 | 2013-07-24 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
JP5284978B2 (ja) * | 2007-11-14 | 2013-09-11 | パナソニック株式会社 | 薄膜トランジスタの製造方法 |
CN101464871A (zh) | 2007-12-21 | 2009-06-24 | 鸿富锦精密工业(深圳)有限公司 | 报表查询配置系统及方法 |
US10164135B2 (en) * | 2009-08-07 | 2018-12-25 | Guardian Glass, LLC | Electronic device including graphene-based layer(s), and/or method or making the same |
US8614435B2 (en) * | 2009-11-03 | 2013-12-24 | International Business Machines Corporation | Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices |
US8105928B2 (en) * | 2009-11-04 | 2012-01-31 | International Business Machines Corporation | Graphene based switching device having a tunable bandgap |
KR101813176B1 (ko) * | 2011-04-07 | 2017-12-29 | 삼성전자주식회사 | 그래핀 전자 소자 및 제조방법 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008023669A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | Nanomatériau carboné semi-conducteur du type n, son procédé de production et procédé de fabrication d'un dispositif semi-conducteur |
JP2009143761A (ja) * | 2007-12-13 | 2009-07-02 | Fujitsu Ltd | グラフェンシートの製造方法、半導体装置の製造方法および半導体装置 |
JP2009164432A (ja) * | 2008-01-08 | 2009-07-23 | Fujitsu Ltd | 半導体装置の製造方法、半導体装置および配線構造体 |
JP2009234815A (ja) * | 2008-03-26 | 2009-10-15 | Fujitsu Ltd | グラフェンシート系材料の処理方法及び装置 |
JP2009252798A (ja) * | 2008-04-01 | 2009-10-29 | Mitsumi Electric Co Ltd | カーボンナノチューブ電界効果トランジスタおよびその製造方法 |
WO2011021715A1 (ja) * | 2009-08-20 | 2011-02-24 | 日本電気株式会社 | 基板、基板の製造方法、半導体素子および半導体素子の製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN7015000255; Seyoung Kim et al.: 'Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric' Applied Physics Letters Volume 94, Issue 6, 20090212, PP.062107 * |
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