JP5588095B2 - 半導体リソグラフィー用共重合体とその製造方法 - Google Patents
半導体リソグラフィー用共重合体とその製造方法 Download PDFInfo
- Publication number
- JP5588095B2 JP5588095B2 JP2007313125A JP2007313125A JP5588095B2 JP 5588095 B2 JP5588095 B2 JP 5588095B2 JP 2007313125 A JP2007313125 A JP 2007313125A JP 2007313125 A JP2007313125 A JP 2007313125A JP 5588095 B2 JP5588095 B2 JP 5588095B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- copolymer
- monomer
- polymerization
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/04—Polymerisation in solution
- C08F2/06—Organic solvent
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/38—Esters containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Emergency Medicine (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007313125A JP5588095B2 (ja) | 2006-12-06 | 2007-12-04 | 半導体リソグラフィー用共重合体とその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006329535 | 2006-12-06 | ||
| JP2006329535 | 2006-12-06 | ||
| JP2007313125A JP5588095B2 (ja) | 2006-12-06 | 2007-12-04 | 半導体リソグラフィー用共重合体とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008163319A JP2008163319A (ja) | 2008-07-17 |
| JP2008163319A5 JP2008163319A5 (enExample) | 2011-01-13 |
| JP5588095B2 true JP5588095B2 (ja) | 2014-09-10 |
Family
ID=39491819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007313125A Active JP5588095B2 (ja) | 2006-12-06 | 2007-12-04 | 半導体リソグラフィー用共重合体とその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7960494B2 (enExample) |
| JP (1) | JP5588095B2 (enExample) |
| KR (1) | KR101450926B1 (enExample) |
| TW (1) | TWI432893B (enExample) |
| WO (1) | WO2008068903A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005105869A1 (ja) * | 2004-04-30 | 2005-11-10 | Maruzen Petrochemical Co., Ltd. | 半導体リソグラフィー用共重合体とその製造方法、および組成物 |
| JP4905250B2 (ja) * | 2007-05-18 | 2012-03-28 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| TWI462938B (zh) * | 2008-05-21 | 2014-12-01 | Sumitomo Chemical Co | 聚合物及含有該聚合物之化學放大型阻劑組成物 |
| JP5591465B2 (ja) * | 2008-10-30 | 2014-09-17 | 丸善石油化学株式会社 | 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法 |
| JP2010168434A (ja) * | 2009-01-21 | 2010-08-05 | Jsr Corp | メタクリル系ラクトン共重合体の重合方法及び共重合体 |
| JP5653583B2 (ja) * | 2009-02-27 | 2015-01-14 | 丸善石油化学株式会社 | 半導体リソグラフィー用共重合体の製造方法 |
| JP5793825B2 (ja) * | 2009-09-10 | 2015-10-14 | 三菱レイヨン株式会社 | リソグラフィー用重合体の製造方法、レジスト組成物の製造方法、および基板の製造方法 |
| JP5471549B2 (ja) * | 2010-02-10 | 2014-04-16 | 三菱瓦斯化学株式会社 | 機能性樹脂組成物 |
| KR20130090756A (ko) * | 2010-03-31 | 2013-08-14 | 스미또모 베이크라이트 가부시키가이샤 | 포지티브형 감광성 수지 조성물의 제조 방법, 포지티브형 감광성 수지 조성물, 및 필터 |
| JP5786426B2 (ja) * | 2011-04-11 | 2015-09-30 | Jsr株式会社 | フォトレジスト組成物、レジストパターン形成方法 |
| JP5743858B2 (ja) * | 2011-11-14 | 2015-07-01 | 丸善石油化学株式会社 | 低分子量レジスト用共重合体の製造方法 |
| TWI471690B (zh) * | 2012-08-30 | 2015-02-01 | Tokyo Ohka Kogyo Co Ltd | Method for manufacturing photoresist composition |
| JP6369156B2 (ja) * | 2013-08-09 | 2018-08-08 | 三菱ケミカル株式会社 | リソグラフィー用重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法 |
| JP6384424B2 (ja) * | 2014-09-04 | 2018-09-05 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP6520054B2 (ja) * | 2014-11-06 | 2019-05-29 | 三菱ケミカル株式会社 | 半導体リソグラフィー用重合体の精製方法および製造方法、レジスト組成物の製造方法、ならびにパターンが形成された基板の製造方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| US4603101A (en) * | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
| DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
| JP2964733B2 (ja) | 1991-10-23 | 1999-10-18 | 三菱電機株式会社 | パターン形成材料 |
| US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
| US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
| JP3380128B2 (ja) | 1996-11-29 | 2003-02-24 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| JP3297272B2 (ja) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
| JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| JP3664576B2 (ja) * | 1996-09-25 | 2005-06-29 | 旭化成ケミカルズ株式会社 | 熱可塑性共重合体の製造方法 |
| JP3712218B2 (ja) * | 1997-01-24 | 2005-11-02 | 東京応化工業株式会社 | 化学増幅型ホトレジスト組成物 |
| US6706826B1 (en) * | 1998-03-27 | 2004-03-16 | Mitsubishi Rayon Co., Ltd. | Copolymer, process for producing the same, and resist composition |
| US6242161B1 (en) * | 1998-05-29 | 2001-06-05 | Jsr Corporation | Acrylic copolymer and reflection-preventing film-forming composition containing the same |
| JP4164942B2 (ja) | 1998-05-29 | 2008-10-15 | Jsr株式会社 | アクリル系共重合体およびそれを含有する反射防止膜形成組成物並びにレジスト膜の形成方法 |
| JP3042618B2 (ja) | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
| WO2000001684A1 (en) * | 1998-07-03 | 2000-01-13 | Nec Corporation | (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same |
| JP2000313779A (ja) | 1999-04-30 | 2000-11-14 | Jsr Corp | 反射防止膜形成組成物 |
| KR100359862B1 (ko) * | 1999-12-23 | 2002-11-09 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
| KR100549574B1 (ko) | 1999-12-30 | 2006-02-08 | 주식회사 하이닉스반도체 | 유기 반사 방지막용 중합체 및 그의 제조방법 |
| JP2001201856A (ja) | 2000-01-21 | 2001-07-27 | Daicel Chem Ind Ltd | フォトレジスト用樹脂とその製造方法、及びフォトレジスト組成物 |
| JP4135848B2 (ja) | 2000-02-28 | 2008-08-20 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP4654544B2 (ja) | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
| JP3421328B2 (ja) | 2001-10-15 | 2003-06-30 | ダイセル化学工業株式会社 | 放射線感光材料用樹脂の製造方法 |
| JP3861679B2 (ja) | 2001-12-17 | 2006-12-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
| JP4000295B2 (ja) | 2001-12-21 | 2007-10-31 | 三菱レイヨン株式会社 | レジスト用共重合体およびその製造方法、ならびにレジスト組成物 |
| JP4372561B2 (ja) * | 2003-01-07 | 2009-11-25 | 三菱レイヨン株式会社 | レジスト用共重合体およびその製造方法、レジスト組成物ならびにパターン製造方法 |
| JP3720827B2 (ja) * | 2003-02-20 | 2005-11-30 | 丸善石油化学株式会社 | レジストポリマーの製造方法 |
| TWI349831B (en) * | 2003-02-20 | 2011-10-01 | Maruzen Petrochem Co Ltd | Resist polymer and method for producing the polymer |
| JP2005171093A (ja) * | 2003-12-11 | 2005-06-30 | Maruzen Petrochem Co Ltd | 半導体リソグラフィー用共重合体の製造方法及び該方法により得られる半導体リソグラフィー用共重合体 |
| WO2005105869A1 (ja) | 2004-04-30 | 2005-11-10 | Maruzen Petrochemical Co., Ltd. | 半導体リソグラフィー用共重合体とその製造方法、および組成物 |
| JP4323406B2 (ja) * | 2004-10-04 | 2009-09-02 | 住友化学株式会社 | 連続重合装置およびそれを用いた連続重合方法 |
| JP4484690B2 (ja) * | 2004-12-21 | 2010-06-16 | ダイセル化学工業株式会社 | フォトレジスト用樹脂の製造方法 |
| JP4635614B2 (ja) | 2005-01-17 | 2011-02-23 | Jsr株式会社 | 共重合体および液浸上層膜用樹脂組成物 |
| JP4552697B2 (ja) | 2005-03-03 | 2010-09-29 | Jsr株式会社 | 液浸上層膜用重合体および液浸上層膜用樹脂組成物 |
-
2007
- 2007-12-04 JP JP2007313125A patent/JP5588095B2/ja active Active
- 2007-12-05 WO PCT/JP2007/001353 patent/WO2008068903A1/ja not_active Ceased
- 2007-12-05 US US12/516,489 patent/US7960494B2/en active Active
- 2007-12-05 KR KR1020097011366A patent/KR101450926B1/ko active Active
- 2007-12-06 TW TW096146554A patent/TWI432893B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090095580A (ko) | 2009-09-09 |
| TWI432893B (zh) | 2014-04-01 |
| WO2008068903A1 (ja) | 2008-06-12 |
| US7960494B2 (en) | 2011-06-14 |
| JP2008163319A (ja) | 2008-07-17 |
| US20090306328A1 (en) | 2009-12-10 |
| TW200837495A (en) | 2008-09-16 |
| KR101450926B1 (ko) | 2014-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5588095B2 (ja) | 半導体リソグラフィー用共重合体とその製造方法 | |
| JP4355011B2 (ja) | 液浸リソグラフィー用共重合体及び組成物 | |
| TWI454486B (zh) | A method for producing a copolymer for photoresist | |
| JP5591465B2 (ja) | 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法 | |
| CN103619889B (zh) | 聚合物及其制造方法 | |
| JP4976229B2 (ja) | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 | |
| JP5308660B2 (ja) | 半導体リソグラフィー用重合体の製造方法 | |
| TWI584063B (zh) | 微影用共聚合物的製造方法 | |
| JP5743858B2 (ja) | 低分子量レジスト用共重合体の製造方法 | |
| JP5384421B2 (ja) | 半導体リソグラフィー用共重合体の製造方法 | |
| JP5869754B2 (ja) | リソグラフィー用共重合体およびその精製方法 | |
| JP5751487B2 (ja) | レジスト用重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法 | |
| JP2008106084A (ja) | 半導体リソグラフィー用共重合体、組成物並びに該共重合体の製造方法 | |
| WO2010082232A1 (ja) | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 | |
| JP2011026372A (ja) | 有機反射防止膜用共重合体の製造方法 | |
| JP5659570B2 (ja) | 重合体の製造方法、半導体リソグラフィー用重合体、レジスト組成物、およびパターンが形成された基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101122 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130610 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130620 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140318 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140512 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140722 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140725 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5588095 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |