WO2010082232A1 - フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 - Google Patents
フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 Download PDFInfo
- Publication number
- WO2010082232A1 WO2010082232A1 PCT/JP2009/000126 JP2009000126W WO2010082232A1 WO 2010082232 A1 WO2010082232 A1 WO 2010082232A1 JP 2009000126 W JP2009000126 W JP 2009000126W WO 2010082232 A1 WO2010082232 A1 WO 2010082232A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- group
- resin
- acid
- solution
- Prior art date
Links
- 0 CC(C)(C)CC(C)(C(C)(C)C(C)(C)CC(C*)(C(C)(C)C(C)(C)CC(C)(C(C)(C)C)C(OC(CC(CC1)(C2)O)C(CC3)CC3CC12O)=O)C(OC(C(CC12)CC11C#N)C2OC1O)=O)C(OC(C)(C)C1(C2)CC(CC3C4)CC3C2C4C1)=O Chemical compound CC(C)(C)CC(C)(C(C)(C)C(C)(C)CC(C*)(C(C)(C)C(C)(C)CC(C)(C(C)(C)C)C(OC(CC(CC1)(C2)O)C(CC3)CC3CC12O)=O)C(OC(C(CC12)CC11C#N)C2OC1O)=O)C(OC(C)(C)C1(C2)CC(CC3C4)CC3C2C4C1)=O 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
- C08F6/06—Treatment of polymer solutions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
Definitions
- the present invention relates to a method for producing a photoresist resin solution, a photoresist composition, and a pattern forming method.
- the photoresist composition solution needs to be finely filtered before it is used for semiconductor production, and the filtration performance is often poor.
- proposals such as Patent Document 1 and Patent Document 2 have been made.
- the lithograph using an ArF excimer laser has further evolved, and the pattern is further miniaturized by exposure during immersion. As a result, further improvement in the filtration performance of the photoresist resin solution is required.
- An object of the present invention is to provide a photoresist composition having good filterability that enables uniform pattern formation, and is a resin solution for photoresist that is stable for a long period of time, that is, has a filtration performance even when stored for a long period of time.
- An object of the present invention is to provide a photoresist resin solution that does not decrease.
- the present invention relates to a photoresist characterized in that a solution containing a photoresist resin that becomes alkali-soluble by an acid is heated and aged at 30 to 90 ° C. for 30 minutes or longer and then filtered through a filter medium having a pore diameter of 1 ⁇ m or less.
- a method for producing a resin solution is provided.
- At least the following formula (1) is used as a polymerization unit of a photoresist resin that becomes alkali-soluble by an acid.
- R represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, and R 1 represents a protecting group removable by an acid.
- the present invention provides at least the following formula (2) as a polymerization unit of a photoresist resin that becomes alkali-soluble by an acid.
- R represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 6 carbon atoms which may have a halogen atom
- R 2 represents a group having 4 to 20 carbon atoms including a lactone skeleton.
- the present invention also provides at least the following formula (3) as a polymerization unit of a photoresist resin that becomes alkali-soluble by an acid.
- R represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 6 carbon atoms which may have a halogen atom
- R 3 represents 4 to 4 carbon atoms containing an alicyclic skeleton having a polar group. 20 groups are shown.
- the present invention further includes a step of heating and aging a solution containing a resin for a photoresist that is alkali-soluble by an acid at 30 to 90 ° C. for 30 minutes or more, a polymerization reaction is performed, and the polymerization solution is added and precipitated in a poor solvent. The produced precipitate is filtered, dissolved in an organic solvent, and the poor solvent is distilled off.
- the method for producing a resin solution for a photoresist as described above is provided.
- the solvent used in the solution containing the photoresist resin that is alkali-soluble by acid contains at least propylene glycol monomethyl ether acetate (PGMEA) and / or propylene glycol monomethyl ether (PGME).
- PMEA propylene glycol monomethyl ether acetate
- PGME propylene glycol monomethyl ether
- the present invention also provides that the solid content concentration of the solution is 3 to 40% by weight in the step of heating and aging a solution containing a photoresist resin that becomes alkali-soluble by an acid at 30 to 90 ° C. for 30 minutes or more.
- a method for producing a photoresist resin solution as described above is provided.
- the present invention further provides a photoresist resin solution in which a solution containing a photoresist resin that is alkali-soluble by an acid is heated and aged at 30 to 90 ° C. for 30 minutes or longer and then filtered through a filter medium having a pore diameter of 1 ⁇ m or less. To do.
- the present invention provides the above-mentioned photoresist solution, wherein a solution containing a photoresist resin that is alkali-soluble by an acid is heated and aged at 30 to 90 ° C. for 30 minutes or longer and then filtered through a filter medium having a pore diameter of 1 ⁇ m or less.
- a photoresist composition containing a photoacid generator in a resin solution.
- the present invention also provides a pattern forming method, wherein the photoresist composition described above is applied to a substrate, and after exposure, the pattern is formed by a process including at least alkali dissolution.
- the resin for photoresist of the present invention is often used for a positive photoresist, and has, as a polymerized unit of the resin, for example, a group that becomes alkali-soluble by the action of an acid.
- acrylic and methacrylic may be collectively referred to as (meth) acrylic in this document.
- an acidic group that exhibits alkali-solubility such as phenol or carboxylic acid, is often protected.
- the above formula (1) represents a polymer unit having a group that becomes alkali-soluble by an acid.
- the polymer unit represented by this formula (1) Examples of the monomer corresponding to are as follows.
- ring Z 1 represents an alicyclic hydrocarbon ring having 6 to 20 carbon atoms which may have a substituent.
- R a represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, and R 4 to R 6 may be the same or different and may have a substituent.
- a good alkyl group having 1 to 6 carbon atoms is shown.
- R 7 is a substituent bonded to ring Z 1 and is the same or different and is an oxo group, an alkyl group, a hydroxyl group which may be protected with a protecting group, or a hydroxy group which is protected with a protecting group.
- R 7 represents a —COOR c group.
- R c represents a tertiary hydrocarbon group, a tetrahydrofuranyl group, a tetrahydropyranyl group, or an oxepanyl group which may have a substituent.
- p represents an integer of 1 to 3.
- R 8 and R 9 are the same or different and each represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms which may have a substituent.
- R 10 represents a hydrogen atom or an organic group. At least two of R 8 , R 9 and R 10 may be bonded to each other to form a ring together with adjacent atoms.
- the alicyclic hydrocarbon ring having 6 to 20 carbon atoms in ring Z 1 may be a single ring or a polycyclic ring such as a condensed ring or a bridged ring.
- Typical alicyclic hydrocarbon rings include, for example, cyclohexane ring, cyclooctane ring, cyclodecane ring, adamantane ring, norbornane ring, norbornene ring, bornane ring, isobornane ring, perhydroindene ring, decalin ring, perhydrofluorene ring.
- the alicyclic hydrocarbon ring includes an alkyl group such as a methyl group (eg, a C 1-4 alkyl group), a halogen atom such as a chlorine atom, a hydroxyl group optionally protected by a protecting group, an oxo group, a protected group It may have a substituent such as a carboxyl group which may be protected with a group.
- the ring Z 1 is preferably a polycyclic alicyclic hydrocarbon ring (bridged hydrocarbon ring) such as an adamantane ring.
- Examples of the halogen atom in R a [and R in the above formulas (1) to (3)] include a fluorine atom and a chlorine atom.
- Examples of the alkyl group having 1 to 6 carbon atoms in R a (and R) include methyl, ethyl, propyl, isopropyl, butyl, pentyl, hexyl groups and the like.
- R a (and R) is preferably a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 4 carbon atoms which may be substituted with a fluorine atom.
- alkyl group having 1 to 6 carbon atoms which may have a substituent in R 4 to R 6 , R 8 and R 9 in formulas (4a), (4b) and (4d) include, for example, methyl, Linear or branched alkyl groups having 1 to 6 carbon atoms such as ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl and hexyl groups; haloalkyl having 1 to 6 carbon atoms such as trifluoromethyl group Groups and the like.
- examples of the alkyl group represented by R 7 include straight-chain such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, hexyl, octyl, decyl, dodecyl group, etc. Examples thereof include branched alkyl groups having about 1 to 20 carbon atoms. Examples of the hydroxyl group that may be protected with a protecting group for R 7 include a hydroxyl group and a substituted oxy group (for example, C 1-4 alkoxy group such as methoxy, ethoxy, propoxy group, etc.).
- Examples of the hydroxyalkyl group which may be protected with a protecting group include a group in which a hydroxyl group which may be protected with the protecting group is bonded via an alkylene group having 1 to 6 carbon atoms.
- Examples of the carboxyl group that may be protected with a protecting group include a —COOR d group.
- R d represents a hydrogen atom or an alkyl group, and examples of the alkyl group include linear or branched carbon such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, and hexyl groups. Examples thereof include alkyl groups of 1 to 6.
- the tertiary hydrocarbon group in R c of the —COOR c group includes, for example, t-butyl, t-amyl, 2-methyl-2-adamantyl, (1-methyl-1-adamantyl) ethyl group Etc.
- the tetrahydrofuranyl group includes a 2-tetrahydrofuranyl group
- the tetrahydropyranyl group includes a 2-tetrahydropyranyl group
- the oxepanyl group includes a 2-oxepanyl group.
- Examples of the organic group for R 10 include a group containing a hydrocarbon group and / or a heterocyclic group.
- the hydrocarbon group includes an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, and a group in which two or more of these are bonded.
- Examples of the aliphatic hydrocarbon group include linear or branched alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, hexyl, and octyl groups (C 1- 8 alkyl groups); linear or branched alkenyl groups such as allyl groups (C 2-8 alkenyl groups, etc.); linear or branched alkynyl groups such as propynyl groups (C 2-8 alkynyl) Group, etc.).
- Examples of the alicyclic hydrocarbon group include cycloalkyl groups such as cyclopropyl, cyclopentyl, and cyclohexyl groups (3 to 8 membered cycloalkyl groups); cycloalkenyl groups such as cyclopentenyl and cyclohexenyl groups (3 to 8 members) Cycloalkenyl groups and the like); bridged carbocyclic groups such as adamantyl and norbornyl groups (C 4-20 bridged carbocyclic groups and the like) and the like.
- Examples of the aromatic hydrocarbon group include C 6-14 aromatic hydrocarbon groups such as phenyl and naphthyl groups.
- Examples of the group in which an aliphatic hydrocarbon group and an aromatic hydrocarbon group are bonded include benzyl and 2-phenylethyl groups. These hydrocarbon groups are protected with alkyl groups (C 1-4 alkyl groups, etc.), haloalkyl groups (C 1-4 haloalkyl groups, etc.), halogen atoms, hydroxyl groups that may be protected with protecting groups, and protecting groups. It may have a substituent such as a hydroxymethyl group which may be protected, a carboxyl group which may be protected with a protecting group, or an oxo group.
- the protecting group a protecting group conventionally used in the field of organic synthesis can be used.
- heterocyclic group examples include heterocyclic groups containing at least one heteroatom selected from an oxygen atom, a sulfur atom and a nitrogen atom.
- Preferred organic groups include C 1-8 alkyl groups, organic groups containing a cyclic skeleton, and the like.
- the “ring” constituting the cyclic skeleton includes a monocyclic or polycyclic non-aromatic or aromatic carbocyclic or heterocyclic ring.
- monocyclic or polycyclic non-aromatic carbocycles and lactone rings are particularly preferable.
- the monocyclic non-aromatic carbocycle include a cycloalkane ring having about 3 to 15 members such as a cyclopentane ring and a cyclohexane ring.
- polycyclic non-aromatic carbocycle bridged carbocycle
- examples of the polycyclic non-aromatic carbocycle include, for example, an adamantane ring; a norbornane ring, a norbornene ring, a bornane ring, an isobornane ring, a tricyclo [5.2.1.0 2,6 ] decane ring, Tetracyclo [4.4.0.1 2,5 .
- a bridged carbocyclic ring such as a bicyclic ring system, a tricyclic ring system, and a tetracyclic ring system (for example, a bridging carbocyclic ring having about 6 to 20 carbon atoms).
- the lactone ring include a ⁇ -butyrolactone ring, a 4-oxatricyclo [4.3.1.1 3,8 ] undecan-5-one ring, and a 4-oxatricyclo [4.2.1.0 3 , 7 ] nonan-5-one ring, 4-oxatricyclo [5.2.1.0 2,6 ] decan-5-one ring, and the like.
- the ring constituting the cyclic skeleton includes an alkyl group such as a methyl group (eg, a C 1-4 alkyl group), a haloalkyl group such as a trifluoromethyl group (eg, a C 1-4 haloalkyl group), a chlorine atom Or a halogen atom such as a fluorine atom, a hydroxyl group that may be protected with a protective group, a hydroxyalkyl group that may be protected with a protective group, a mercapto group that may be protected with a protective group, or a protective group.
- an alkyl group such as a methyl group (eg, a C 1-4 alkyl group), a haloalkyl group such as a trifluoromethyl group (eg, a C 1-4 haloalkyl group), a chlorine atom Or a halogen atom such as a fluorine atom, a hydroxyl group that may be protected with
- It may have a substituent such as a carboxyl group which may be protected, an amino group which may be protected with a protecting group, and a sulfonic acid group which may be protected with a protecting group.
- a protecting group a protecting group conventionally used in the field of organic synthesis can be used.
- the ring constituting the cyclic skeleton may be directly bonded to an oxygen atom (oxygen atom adjacent to R 10 ) shown in the formula (4d) or may be bonded via a linking group.
- the linking group include linear or branched alkylene groups such as methylene, methylmethylene, dimethylmethylene, ethylene, propylene and trimethylene groups; carbonyl groups; oxygen atoms (ether bonds; —O—); oxycarbonyl groups ( An ester bond; —COO—); an aminocarbonyl group (amide bond; —CONH—); and a group in which a plurality of these are bonded.
- At least two of R 8 , R 9 and R 10 may be bonded to each other to form a ring together with adjacent atoms.
- the ring include cycloalkane rings such as cyclopropane ring, cyclopentane ring and cyclohexane ring; oxygen-containing rings such as tetrahydrofuran ring, tetrahydropyran ring and oxepane ring; bridged ring and the like.
- stereoisomers may exist, but these can be used alone or as a mixture of two or more.
- the following compounds may be mentioned, but the invention is not limited thereto.
- the following compounds may be mentioned, but the invention is not limited thereto.
- the compound represented by the above formula (4d) can be obtained, for example, by reacting the corresponding vinyl ether compound and (meth) acrylic acid by a conventional method using an acid catalyst.
- 1-adamantyloxy-1-ethyl (meth) acrylate can be produced by reacting 1-adamantyl-vinyl-ether with (meth) acrylic acid in the presence of an acid catalyst.
- the photoresist resin that is alkali-soluble by an acid in the present invention may have other polymerized units as polymerized units (repeating structural units) other than the polymerized unit having a group that is alkali-soluble by the acid. Good.
- the polymerizable unsaturated monomer corresponding to the other polymerized units include monomers that can impart or improve hydrophilicity and water solubility.
- Examples of such monomers include hydroxyl group-containing monomers (including compounds in which hydroxyl groups are protected), mercapto group-containing monomers (including compounds in which mercapto groups are protected), carboxyl groups Containing monomers (including compounds in which carboxyl groups are protected), amino group-containing monomers (including compounds in which amino groups are protected), sulfonic acid group-containing monomers (where sulfonic acid groups are protected) Polar group-containing monomers such as lactone skeleton-containing monomers, cyclic ketone skeleton-containing monomers, acid anhydride group-containing monomers, imide group-containing monomers, and the like Is mentioned.
- the above formula (2) represents a polymer unit containing a lactone skeleton, and the monomer corresponding to the polymer unit represented by the formula (2) includes The following are listed.
- Each of the compounds represented by the formulas (5a) to (5c) may have stereoisomers, but these can be used alone or as a mixture of two or more.
- R a is the same as above.
- R 11 to R 13 are the same or different and are protected by a hydrogen atom, an alkyl group, a hydroxyl group that may be protected with a protecting group, a hydroxyalkyl group that may be protected with a protecting group, or a protecting group.
- V 1 to V 3 are the same or different and represent —CH 2 —, —CO— or —COO—. Provided that (i) at least one of V 1 to V 3 is —CO— or —COO—, or (ii) at least one of R 11 to R 13 is protected with a protecting group.
- X 1 represents a carbon atom, an oxygen atom or a sulfur atom, and substituents R 17 and R 18 are present only when it is a carbon atom.
- R 14 to R 18 may be the same or different and each may be a hydrogen atom, an alkyl group, a hydroxyl group that may be protected with a protecting group, a hydroxyalkyl group that may be protected with a protecting group, or a protective group.
- halogen atom such as a carboxyl group, a cyano group, a fluorine atom or a chlorine atom, or an alkyl group having 1 to 6 carbon atoms substituted by a fluorine atom.
- q represents 1 or 2
- r represents 0 or 1.
- a typical example of a monomer (polar group-containing monomer) corresponding to the polymerization unit represented by the formula (3) is a monomer represented by the following formula (6).
- ring Z 2 represents an alicyclic hydrocarbon ring having 6 to 20 carbon atoms.
- R a is the same as above.
- R 19 is a substituent bonded to ring Z 2 and is the same or different and is an oxo group, an alkyl group, a hydroxyl group which may be protected with a protecting group, or a hydroxy group which is protected with a protecting group.
- An alkyl group, a carboxyl group that may be protected with a protecting group, an amino group that may be protected with a protecting group, or a sulfonic acid group that may be protected with a protecting group is shown.
- At least one of the s R 19 s may be protected with an oxo group, a hydroxyl group that may be protected with a protecting group, a hydroxyalkyl group that may be protected with a protecting group, or a protecting group.
- s represents an integer of 1 to 3.
- the alicyclic hydrocarbon ring having 6 to 20 carbon atoms in the ring Z 2 may be a single ring or a polycyclic ring such as a condensed ring or a bridged ring.
- Typical alicyclic hydrocarbon rings include, for example, cyclohexane ring, cyclooctane ring, cyclodecane ring, adamantane ring, norbornane ring, norbornene ring, bornane ring, isobornane ring, perhydroindene ring, decalin ring, perhydrofluorene ring.
- Tricyclo [7.4.0.0 3,8 ] tridecane ring trihydroanthracene ring, tricyclo [5.2.1.0 2,6 ] decane ring, tricyclo [4.2.2.1 2, 5 ] Undecane ring, tetracyclo [4.4.0.1 2,5 . 1 7,10 ] dodecane ring and the like.
- the alicyclic hydrocarbon ring is protected with an alkyl group such as a methyl group (for example, a C 1-4 alkyl group), a haloalkyl group such as a trifluoromethyl group, a halogen atom such as a fluorine atom or a chlorine atom, or a protecting group.
- a hydroxyl group which may be protected a hydroxyalkyl group which may be protected with a protecting group, a mercapto group which may be protected with a protecting group, an oxo group, a carboxyl group which may be protected with a protecting group, a protecting group It may have a substituent such as an amino group which may be protected with a sulfonic acid group which may be protected with a protecting group.
- the alkyl group for R 19 is a linear or branched chain such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, hexyl, octyl, decyl, dodecyl groups, etc. And an alkyl group having about 1 to 20 carbon atoms.
- the amino group that may be protected with a protecting group include an amino group and a substituted amino group (for example, C 1-4 alkylamino groups such as methylamino, ethylamino, propylamino group, etc.).
- R e represents a hydrogen atom or an alkyl group, and examples of the alkyl group include linear or branched carbon such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, and hexyl groups. Examples thereof include alkyl groups of 1 to 6.
- a hydroxyl group optionally protected with a protecting group for R 19 a hydroxyalkyl group optionally protected with a protecting group, a mercapto group optionally protected with a protecting group, a carboxyl optionally protected with a protecting group
- the groups are the same as described above.
- polar group-containing monomer examples include acrylic acid, methacrylic acid, maleic anhydride, maleimide and the like.
- a polymerization unit constituting a resin that becomes alkali-soluble by an acid can be added as necessary.
- Specific examples include the following vinyl monomers. Substitution of methyl (meth) acrylate, ethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-butyl (meth) acrylate, n-hexyl (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate, etc.
- (Meth) acrylic acid ester compound cyclohexyl (meth) acrylate, norbornyl (meth) acrylate, adamantyl (meth) acrylate having a linear or branched alkyl group having 1 to 20 carbon atoms which may have a group
- (Meth) acrylic acid ester compounds having an alicyclic hydrocarbon group having 6 to 20 carbon atoms which may have a substituent such as tetracyclododecanyl (meth) acrylate, styrene, ⁇ -styrene, p-methyl
- Aromatic alkenyl compounds which may have a substituent such as styrene Acrylonitrile, methacrylonitrile vinyl cyanide compounds such as nitriles, N, N- dimethyl (meth) acrylamide, N- isopropyl (meth) acrylamide, (meth) acrylamide compound, and the like.
- the ratio of the polymerization unit represented by the formula (1) is not particularly limited, but all of the polymers constituting the polymer are not limited. It is generally 1 to 100 mol%, preferably 5 to 80 mol%, more preferably about 10 to 60 mol%, based on the monomer unit.
- the polymer units having a lactone skeleton represented by the formula (2) are, for example, about 0 to 95 mol%, preferably about 10 to 90 mol%, more preferably about 20 to 60 mol%.
- the ratio of the polymer unit represented by the formula (3) is, for example, about 0 to 70 mol%, preferably about 5 to 60 mol%, and more preferably about 10 to 50 mol%. More specifically, the fact that it becomes alkali-soluble by an acid means that the protecting group is removed by heating as required by the action of an acid generated from a photoacid generator, etc. The property of dissolving in an alkali developer or the like is expressed.
- the present invention provides a highly stable and homogeneous photo-resist by filtering a solution containing a photoresist resin that becomes alkali-soluble with an acid at 30 to 90 ° C. by heating and aging for 30 minutes or more and then filtering with a filter medium having a pore diameter of 1 ⁇ m or less.
- a method for producing a resist resin solution has been found, and the temperature for heat aging is usually 30 to 90 ° C., preferably 35 to 80 ° C., particularly preferably about 40 to 70 ° C.
- the heating temperature is lower than 30 ° C., the time required for aging becomes very long, which is not economical.
- the heating temperature exceeds 90 ° C., the photoresist resin is decomposed, which is not preferable.
- the time for heating and aging the solution containing a photoresist resin that becomes alkali-soluble by an acid is usually 30 minutes or more, preferably 2 hours or more, particularly preferably 4 hours or more. If the heat aging time is less than 30 minutes, long-term storage stability deteriorates. Moreover, although it is the upper limit of the heat aging time, it is not particularly limited. The effect of the present invention can also be realized by filtering after storage at an appropriate temperature for a long period of time.
- the pore diameter of the filter medium used for filtration is usually 1 ⁇ m or less, preferably 0.5 ⁇ m or less, particularly preferably 0.1 ⁇ m or less. If the pore diameter exceeds 1 ⁇ m, the particles present in the resin solution cannot be sufficiently removed.
- the pore diameter is important for the filter medium, and the material is not particularly limited. Examples of the material for the filter medium include polytetrafluoroethylene (PTFE), polyethylene, polypropylene, and nylon.
- the resin concentration at the time of heat aging is usually 3 to 40% by weight, preferably 3 to 30% by weight, particularly preferably about 3 to 20% by weight.
- the resin concentration is less than 3% by weight, the amount of the solution to be handled increases, which is not economical.
- it exceeds 40 weight% filtration resistance will become large when filtering and suitable filtration will become impossible.
- the solvent used when the photoresist resin solution of the present invention is heat-aged is not particularly limited as long as it is a solvent capable of dissolving the resin, but it is preferable to use a solvent used for the resist composition.
- examples include glycol solvents, ester solvents, ketone solvents, and mixed solvents thereof.
- propylene glycol monomethyl ether PGME
- propylene glycol monomethyl ether acetate PGMEA
- ethyl lactate methyl isobutyl ketone
- methyl amyl ketone methyl amyl ketone
- cyclohexanone a mixture thereof (for example, propylene glycol monomethyl ether acetate and / or A solvent containing at least propylene glycol monomethyl ether), particularly a propylene glycol monomethyl ether acetate single solvent, a mixed solvent of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, a mixed solvent of propylene glycol monomethyl ether acetate and ethyl lactate, Propylene glycol monomethyl ether acetate and cyclohexano Of a mixed solvent of a solvent containing at least propylene glycol monomethyl ether acetate is preferably used.
- the polymerization method used for obtaining the polymer compound (resin for photoresist that becomes alkali-soluble by acid) in the present invention is not particularly limited, but radical polymerization is preferred.
- the polymerization of the monomer mixture can be performed by a conventional method used for producing an acrylic polymer, such as solution polymerization, bulk polymerization, suspension polymerization, bulk-suspension polymerization, and emulsion polymerization. Is preferred.
- drop polymerization is preferable among solution polymerization. Specifically, for example, (i) a monomer solution previously dissolved in an organic solvent and a polymerization initiator solution dissolved in an organic solvent are prepared in an organic solvent kept at a constant temperature.
- a monomer solution previously dissolved in an organic solvent and a polymerization initiator solution dissolved in the organic solvent are respectively prepared, and the polymerization initiator solution is dropped into the monomer solution maintained at a constant temperature. It is performed by a method or the like.
- radical polymerization initiator is not particularly limited, but examples include azo compounds, peroxide compounds, and redox compounds. 2,2'-azobisisobutyrate, azobisisobutyronitrile, 2,2'-azobis (2-methylbutyronitrile), t-butylperoxypivalate, di-t-butylperoxide, iso Preferred are butyryl peroxide, lauroyl peroxide, succinic acid peroxide, dicinnamyl peroxide, di-n-propyl peroxydicarbonate, t-butylperoxyallyl monocarbonate, benzoyl peroxide, hydrogen peroxide, ammonium persulfate, etc. .
- a known solvent can be used.
- ether chain ether such as diethyl ether, propylene glycol monomethyl ether, etc., chain ether such as tetrahydrofuran, dioxane, etc.
- ester methyl acetate, ethyl acetate, Glycol ether esters such as butyl acetate, ethyl lactate, propylene glycol monomethyl ether acetate
- ketones acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, etc.
- amides N, N-dimethylacetamide, N, N-dimethylformamide, etc.
- Sulfoxide such as dimethyl sulfoxide
- alcohol such as methanol, ethanol, propanol
- hydrocarbon aromatic carbonization such as benzene, toluene, xylene
- the polymer obtained by polymerization can be purified by precipitation or reprecipitation.
- the precipitation or reprecipitation solvent may be either an organic solvent or water, or a mixed solvent.
- the organic solvent used as the precipitation or reprecipitation solvent include hydrocarbons (aliphatic hydrocarbons such as pentane, hexane, heptane, and octane; alicyclic hydrocarbons such as cyclohexane and methylcyclohexane; aromatics such as benzene, toluene, and xylene.
- Aromatic hydrocarbons halogenated hydrocarbons (halogenated aliphatic hydrocarbons such as methylene chloride, chloroform and carbon tetrachloride; halogenated aromatic hydrocarbons such as chlorobenzene and dichlorobenzene), nitro compounds (nitromethane, nitroethane, etc.) , Nitrile (acetonitrile, benzonitrile, etc.), ether (chain ether such as diethyl ether, diisopropyl ether, dimethoxyethane; cyclic ether such as tetrahydrofuran, dioxane), ketone (acetone, methyl ethyl ketone) Diisobutyl ketone, etc.), ester (ethyl acetate, butyl acetate, etc.), carbonate (dimethyl carbonate, diethyl carbonate, ethylene carbonate, propylene carbonate, etc.), alcohol (methanol, ethanol, propanol
- a solvent containing at least a hydrocarbon (particularly an aliphatic hydrocarbon such as hexane) is preferable.
- the weight average molecular weight (Mw) of the polymer compound is, for example, about 1,000 to 500,000, preferably about 3000 to 50,000, and the molecular weight distribution (Mw / Mn) is, for example, about 1.2 to 2.5.
- said Mn shows a number average molecular weight
- both Mn and Mw are values of polystyrene conversion.
- the polymer compound has high stability such as chemical resistance, is excellent in solubility in organic solvents, and is excellent in hydrolyzability and solubility in water after hydrolysis, so that it is a highly functional polymer in various fields. Can be used.
- the step of heating and aging a solution containing a photoresist resin that becomes alkali-soluble by an acid at 30 to 90 ° C. for 30 minutes or longer is performed as described above. Then, the polymerization solution is added and precipitated in a poor solvent, and the produced precipitate is filtered (filtered), then dissolved in an organic solvent, and the poor solvent is distilled off.
- the photoresist composition of the present invention contains, for example, a photoresist resin (polymer compound) produced by the above method, a photoacid generator, and a resist solvent.
- the photoresist composition can be prepared, for example, by adding a photoacid generator to the photoresist resin solution obtained as described above.
- photoacid generator examples include conventional or known compounds that efficiently generate acid upon exposure, such as diazonium salts, iodonium salts (for example, diphenyliodohexafluorophosphate), sulfonium salts (for example, triphenylsulfonium hexafluoroantimony).
- diazonium salts for example, diphenyliodohexafluorophosphate
- sulfonium salts for example, triphenylsulfonium hexafluoroantimony
- sulfonate esters [eg 1-phenyl-1- (4-methylphenyl) sulfonyloxy-1-benzoylmethane, 1,2,3-tri Sulfonyloxymethylbenzene, 1,3-dinitro-2- (4-phenylsulfonyloxymethyl) benzene, 1-phenyl-1- (4-methylphenylsulfonyloxymethyl) -1-hydroxy-1-ben Irumetan etc.], oxathiazole derivatives, s- triazine derivatives, disulfone derivatives (diphenyl sulfone) imide compound, an oxime sulfonate, a diazonaphthoquinone, and benzoin tosylate.
- photoacid generators can be used alone or in combination of
- the use amount of the photoacid generator can be appropriately selected according to the strength of the acid generated by light irradiation, the ratio of each repeating unit in the polymer (resin for photoresist), and the like. It can be selected from a range of about 1 to 30 parts by weight, preferably 1 to 25 parts by weight, and more preferably about 2 to 20 parts by weight.
- the resist solvent examples include glycol solvents, ester solvents, ketone solvents, and mixed solvents exemplified as the polymerization solvent.
- glycol solvents examples include glycol solvents, ester solvents, ketone solvents, and mixed solvents exemplified as the polymerization solvent.
- propylene glycol monomethyl ether propylene glycol monomethyl ether acetate, ethyl lactate, methyl isobutyl ketone, methyl amyl ketone, cyclohexanone, and a mixed solution thereof are preferable.
- propylene glycol monomethyl ether acetate alone solvent propylene glycol monomethyl ether
- a solvent containing at least propylene glycol monomethyl ether acetate, such as a mixed solvent of acetate and propylene glycol monomethyl ether, a mixed solvent of propylene glycol monomethyl ether acetate and ethyl lactate, a mixed solvent of propylene glycol monomethyl ether acetate and cyclohexanone is preferable. Used.
- the polymer concentration in the photoresist composition is, for example, about 3 to 40% by weight.
- the photoresist composition may contain an alkali-soluble component such as an alkali-soluble resin (for example, a novolac resin, a phenol resin, an imide resin, a carboxyl group-containing resin), a colorant (for example, a dye), and the like.
- an alkali-soluble component such as an alkali-soluble resin (for example, a novolac resin, a phenol resin, an imide resin, a carboxyl group-containing resin), a colorant (for example, a dye), and the like.
- the photoresist composition thus obtained is applied onto a substrate or a substrate, dried, and then exposed to light on a coating film (resist film) through a predetermined mask (or further subjected to post-exposure baking).
- a coating film resist film
- predetermined mask or further subjected to post-exposure baking
- the base material or substrate examples include silicon wafer, metal, plastic, glass, and ceramic.
- the photoresist composition can be applied using a conventional application means such as a spin coater, a dip coater, or a roller coater.
- the thickness of the coating film is, for example, about 0.05 to 20 ⁇ m, preferably about 0.1 to 2 ⁇ m.
- light of various wavelengths such as ultraviolet rays and X-rays can be used.
- semiconductor resists g-rays, i-rays, and excimer lasers (eg, XeCl, KrF, KrCl, ArF, ArCl, etc.) are usually used. Etc. are used.
- the exposure energy is, for example, about 1 to 1000 mJ / cm 2 , preferably about 10 to 500 mJ / cm 2 .
- An acid is generated from the photoacid generator by light irradiation, and the acid causes, for example, a carboxyl group of a repeating unit (a repeating unit having an acid-eliminable group) that becomes alkali-soluble by the action of an acid of a photoresist resin.
- the protecting group (leaving group) is rapidly removed to generate a carboxyl group that contributes to solubilization. Therefore, a predetermined pattern can be formed with high accuracy by development (alkali dissolution) with water or an alkali developer.
- the weight average molecular weight (Mw) and number average molecular weight (Mn) of the polymer indicate standard polystyrene conversion values determined by GPC measurement using a tetrahydrofuran solvent using a refractive index system (RI).
- RI refractive index system
- Example 1 Synthesis of the following polymer compounds
- PGMEA propylene glycol monomethyl ether acetate
- PGME propylene glycol monomethyl ether
- PGMEA propylene glycol monomethyl ether acetate
- Example 2 Synthesis of the following polymer compounds The three monomers of Example 1 were substituted with 12.89 g of 1- (1-methacryloyloxy-1-methylethyl) adamantane, 5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4,8 ] nonane- A polymer solution was obtained in the same manner as in Example 1, except that the amount was changed to 10.92 g of 2-one and 6.20 g of 1,3-dihydroxy-5-methacryloyloxyadamantane. The obtained polymer was subjected to GPC analysis. As a result, Mw (weight average molecular weight) was 8500, and molecular weight distribution (Mw / Mn) was 1.87.
- Mw weight average molecular weight
- Example 3 Synthesis of the following polymer compounds The three monomers of Example 1 were substituted with 11.29 g of 1- (1-methacryloyloxy-1-methylethyl) cyclohexane, 5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4,8 ] nonane- A polymer solution was obtained in the same manner as in Example 1, except that 11.94 g of 2-one and 6.77 g of 1,3-dihydroxy-5-methacryloyloxyadamantane were used. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 9100, and molecular weight distribution (Mw / Mn) was 1.95.
- Mw weight average molecular weight
- Example 4 Synthesis of the following polymer compounds The three monomers of Example 1 were converted to 11.45 g of 1- (1-methacryloyloxy-1-methylethyl) cyclohexane, 5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4,8 ] nonane- A polymer solution was obtained in the same manner as in Example 1 except for changing to 12.11 g of 2-one and 6.44 g of 1-hydroxy-3-methacryloyloxyadamantane. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 9400 and molecular weight distribution (Mw / Mn) was 1.98.
- Mw weight average molecular weight
- Example 5 Synthesis of the following polymer compounds The three monomers of Example 1 were substituted with 12.52 g of 1- (1-methacryloyloxy-1-methylethyl) adamantane, 1-fluoro-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4, 8 ] A polymer solution was obtained in the same manner as in Example 1 except that 11.46 g of nonan-2-one and 6.02 g of 1,3-dihydroxy-5-methacryloyloxyadamantane were used. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 8300 and molecular weight distribution (Mw / Mn) was 1.83.
- Mw weight average molecular weight
- Example 6 Synthesis of the following polymer compounds The three monomers of Example 1 were converted to 10.94 g of 1- (1-methacryloyloxy-1-methylethyl) cyclohexane, 1-fluoro-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4, 8 ] A polymer solution was obtained in the same manner as in Example 1 except that 12.50 g of nonan-2-one and 6.56 g of 1,3-dihydroxy-5-methacryloyloxyadamantane were used. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 8800, and molecular weight distribution (Mw / Mn) was 1.85.
- Mw weight average molecular weight
- Example 7 Synthesis of the following polymer compounds The three monomers of Example 1 were converted to 11.59 g of 1- (1-methacryloyloxy-1-methylethyl) adamantane, 1-trifluoromethyl-5-methacryloyloxy-3-oxatricyclo [4.2.1.0. 4,8 ] Nonane-2-one 12.83 g and 1,3-dihydroxy-5-methacryloyloxyadamantane were changed to 5.58 g to obtain a polymer solution. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 7800 and molecular weight distribution (Mw / Mn) was 1.79.
- Mw weight average molecular weight
- Example 8 Synthesis of the following polymer compounds
- the three monomers of Example 1 were converted to 10.50 g of 1- (1-methacryloyloxy-1-methylethyl) -3-methylcyclohexane, 1-trifluoromethyl-5-methacryloyloxy-3-oxatricyclo [4.2 .1.0 4,8] nonan-2-one 13.59 g, 1,3-dihydroxy-5 except for changing the methacryloyloxyadamantane 5.91g performs the same operation as in example 1, to obtain a polymer solution It was. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 8000 and molecular weight distribution (Mw / Mn) was 1.81.
- Example 9 Synthesis of the following polymer compounds
- the three monomers of Example 1 were converted to 11.72 g of 2-methyl-2-methacryloyloxyadamantane, 1-cyano-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4,8 ] nonane-2 -A polymer solution was obtained in the same manner as in Example 1 except that 12.37 g and 1-hydroxy-3-methacryloyloxyadamantane were changed to 5.91 g.
- Mw weight average molecular weight
- Mn molecular weight distribution
- Example 10 Synthesis of the following polymer compounds The three monomers of Example 1 were mixed with 12.38 g of 1- (1-methacryloyloxy-1-methylethyl) adamantane, 1-cyano-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4, 8 ] A polymer solution was obtained in the same manner as in Example 1 except that 11.67 g of nonan-2-one and 5.95 g of 1,3-dihydroxy-5-methacryloyloxyadamantane were used. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 8100, and molecular weight distribution (Mw / Mn) was 1.80.
- Mw weight average molecular weight
- Example 11 Synthesis of the following polymer compounds The three monomers of Example 1 were converted to 10.81 g of 1- (1-methacryloyloxy-1-methylethyl) cyclohexane, 1-cyano-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4, 8 ] A polymer solution was obtained in the same manner as in Example 1 except that 12.71 g of nonan-2-one and 6.48 g of 1,3-dihydroxy-5-methacryloyloxyadamantane were used. When the obtained polymer was analyzed by GPC, it was found that Mw (weight average molecular weight) was 8900, and molecular weight distribution (Mw / Mn) was 1.88.
- Mw weight average molecular weight
- Example 12 Synthesis of the following polymer compounds The three monomers of Example 1 were converted to 10.96 g of 1- (1-methacryloyloxy-1-methylethyl) cyclohexane, 1-cyano-5-methacryloyloxy-3-oxatricyclo [4.2.1.0 4, 8 ] A polymer solution was obtained in the same manner as in Example 1 except that 12.89 g of nonan-2-one and 6.16 g of 1-hydroxy-3-methacryloyloxyadamantane were used. When the obtained polymer was subjected to GPC analysis, it was found that Mw (weight average molecular weight) was 9100 and molecular weight distribution (Mw / Mn) was 1.91.
- Mw weight average molecular weight
- Example 13 Synthesis of the following polymer compounds
- the three monomers of Example 1 were converted to 11.26 g of 1- (1-methacryloyloxy-1-methylethyl) -3-methylcyclohexane, 1-cyano-5-methacryloyloxy-3-oxatricyclo [4.2.1 .0 4,8] nonan-2-one 12.41 g, 1,3-dihydroxy-5 except for changing the methacryloyloxyadamantane 6.33g performs the same operation as in example 1 to obtain a polymer solution.
- Mw weight average molecular weight
- Mn molecular weight distribution
- Comparative Example 1-13 About the comparative example corresponding to the number of an Example, operation similar to an Example was performed except not performing the heat processing for 60 degreeC and 8 hours in an Example.
- a photoresist composition with good filterability that enables uniform pattern formation.
- a photoresist resin solution that is stable over a long period of time that is, a photoresist resin solution that does not deteriorate the filtration performance even when stored for a long period of time is provided.
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
を含むことを特徴とする前記記載のフォトレジスト用樹脂溶液の製造方法を提供する。
を含むことを特徴とする前記記載のフォトレジスト用樹脂溶液の製造方法を提供する。
を含むことを特徴とする前記記載のフォトレジスト用樹脂溶液の製造方法を提供する。
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
下記高分子化合物の合成
実施例の番号に対応した比較例について、実施例における60℃、8時間の加熱処理を行わない以外は実施例と同様の操作を行った。
実施例および比較例で得られたポリマー溶液を、固形分濃度5重量%、溶媒組成PGMEA/PGME(重量比6/4)になるように調製し、1日間および10日間25℃で放置した。その後、調整したポリマー溶液50gを、孔径0.02μm のフィルターを装着したステンレスホルダー(アドバンテック東洋製、KST-47)に入れ、0.15MPaの圧力でろ過し、その性能を評価した。
Claims (10)
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液を30~90℃において、30分以上加熱熟成後、細孔径1μm以下のろ材によりろ過することを特徴とするフォトレジスト用樹脂溶液の製造方法。
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液を30~90℃において、30分以上加熱熟成する工程は、重合反応し、重合溶液を貧溶媒中へ添加沈殿させ、生成した沈殿をろ過後、有機溶媒に溶解し、貧溶媒を留去後実施することを特徴とする請求項1記載のフォトレジスト用樹脂溶液の製造方法。
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液に使用される溶媒が、少なくともプロピレングリコールモノメチルエーテルアセテート(PGMEA)および/またはプロピレングリコールモノメチルエーテル(PGME)を含むことを特徴とする請求項1記載のフォトレジスト用樹脂溶液の製造方法。
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液を30~90℃において、30分以上加熱熟成する工程で、溶液の固形分濃度が3~40重量%であることを特徴とする請求項1記載のフォトレジスト用樹脂溶液の製造方法。
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液を30~90℃において、30分以上加熱熟成後、細孔径1μm以下のろ材によりろ過されたフォトレジスト用樹脂溶液。
- 酸によりアルカリ可溶となるフォトレジスト用樹脂を含む溶液を30~90℃において、30分以上加熱熟成後、細孔径1μm以下のろ材によりろ過された請求項8記載のフォトレジスト用樹脂溶液に、更に光酸発生剤を含有させたフォトレジスト組成物。
- 請求項9記載のフォトレジスト組成物を基板に塗布し、露光後、アルカリ溶解を少なくとも含む工程によりパターンを形成することを特徴とするパターン形成方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117016465A KR20110106882A (ko) | 2009-01-15 | 2009-01-15 | 포토레지스트용 수지 용액의 제조 방법, 포토레지스트 조성물 및 패턴 형성 방법 |
PCT/JP2009/000126 WO2010082232A1 (ja) | 2009-01-15 | 2009-01-15 | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
US13/132,375 US8753793B2 (en) | 2009-01-15 | 2009-01-15 | Method for producing resin solution for photoresist, photoresist composition, and pattern-forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/000126 WO2010082232A1 (ja) | 2009-01-15 | 2009-01-15 | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010082232A1 true WO2010082232A1 (ja) | 2010-07-22 |
Family
ID=42339502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/000126 WO2010082232A1 (ja) | 2009-01-15 | 2009-01-15 | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8753793B2 (ja) |
KR (1) | KR20110106882A (ja) |
WO (1) | WO2010082232A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6060012B2 (ja) * | 2013-03-15 | 2017-01-11 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
US10242871B2 (en) * | 2014-10-21 | 2019-03-26 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition including a compound having an amino group protected with a tert-butoxycarbonyl group |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06256565A (ja) * | 1993-03-03 | 1994-09-13 | Sumitomo Chem Co Ltd | 感放射線性樹脂組成物の調製法 |
JPH0774073A (ja) * | 1991-10-07 | 1995-03-17 | Fuji Photo Film Co Ltd | 不純金属成分の低減された感電離放射線性樹脂組成物の製造方法 |
JP2001125269A (ja) * | 1999-10-28 | 2001-05-11 | Fuji Photo Film Co Ltd | 化学増幅型レジスト組成物、その調製方法及びそれを用いたパターン形成方法 |
JP2002502055A (ja) * | 1998-02-02 | 2002-01-22 | クラリアント・インターナシヨナル・リミテッド | 粒子形成傾向の低下したフォトレジスト組成物の製造方法 |
JP2002268235A (ja) * | 2001-03-07 | 2002-09-18 | Nippon Zeon Co Ltd | レジスト組成物の調製方法 |
JP2004199019A (ja) * | 2002-10-25 | 2004-07-15 | Fuji Photo Film Co Ltd | レジスト組成物の製造方法 |
JP2006126818A (ja) * | 2004-09-28 | 2006-05-18 | Sumitomo Chemical Co Ltd | 化学増幅型レジスト組成物 |
JP2007034049A (ja) * | 2005-07-28 | 2007-02-08 | Fujifilm Corp | 化学増幅型レジスト組成物及びその製造方法 |
JP2009037108A (ja) * | 2007-08-03 | 2009-02-19 | Daicel Chem Ind Ltd | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09152714A (ja) | 1995-11-29 | 1997-06-10 | Hitachi Chem Co Ltd | 感光性樹脂組成物及びレジスト像の製造法 |
JP2000231200A (ja) | 1999-02-10 | 2000-08-22 | Mitsubishi Chemicals Corp | フォトレジスト組成物 |
JP3963624B2 (ja) | 1999-12-22 | 2007-08-22 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2001215704A (ja) * | 2000-01-31 | 2001-08-10 | Sumitomo Chem Co Ltd | 化学増幅型ポジ型レジスト組成物 |
JP4929552B2 (ja) | 2000-10-30 | 2012-05-09 | 住友化学株式会社 | 固体樹脂の製造方法 |
US6664023B2 (en) * | 2001-03-13 | 2003-12-16 | International Business Machines Corporation | Controlled aging of photoresists for faster photospeed |
JP2002278053A (ja) * | 2001-03-16 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP3759526B2 (ja) | 2003-10-30 | 2006-03-29 | 丸善石油化学株式会社 | 半導体リソグラフィー用共重合体の製造方法 |
KR20060051603A (ko) | 2004-09-28 | 2006-05-19 | 스미또모 가가꾸 가부시키가이샤 | 화학 증폭 레지스트 조성물 |
JP5022594B2 (ja) | 2005-12-06 | 2012-09-12 | 株式会社ダイセル | フォトレジスト用樹脂溶液及びその製造方法 |
-
2009
- 2009-01-15 WO PCT/JP2009/000126 patent/WO2010082232A1/ja active Application Filing
- 2009-01-15 US US13/132,375 patent/US8753793B2/en not_active Expired - Fee Related
- 2009-01-15 KR KR1020117016465A patent/KR20110106882A/ko not_active Application Discontinuation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0774073A (ja) * | 1991-10-07 | 1995-03-17 | Fuji Photo Film Co Ltd | 不純金属成分の低減された感電離放射線性樹脂組成物の製造方法 |
JPH06256565A (ja) * | 1993-03-03 | 1994-09-13 | Sumitomo Chem Co Ltd | 感放射線性樹脂組成物の調製法 |
JP2002502055A (ja) * | 1998-02-02 | 2002-01-22 | クラリアント・インターナシヨナル・リミテッド | 粒子形成傾向の低下したフォトレジスト組成物の製造方法 |
JP2001125269A (ja) * | 1999-10-28 | 2001-05-11 | Fuji Photo Film Co Ltd | 化学増幅型レジスト組成物、その調製方法及びそれを用いたパターン形成方法 |
JP2002268235A (ja) * | 2001-03-07 | 2002-09-18 | Nippon Zeon Co Ltd | レジスト組成物の調製方法 |
JP2004199019A (ja) * | 2002-10-25 | 2004-07-15 | Fuji Photo Film Co Ltd | レジスト組成物の製造方法 |
JP2006126818A (ja) * | 2004-09-28 | 2006-05-18 | Sumitomo Chemical Co Ltd | 化学増幅型レジスト組成物 |
JP2007034049A (ja) * | 2005-07-28 | 2007-02-08 | Fujifilm Corp | 化学増幅型レジスト組成物及びその製造方法 |
JP2009037108A (ja) * | 2007-08-03 | 2009-02-19 | Daicel Chem Ind Ltd | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110244394A1 (en) | 2011-10-06 |
KR20110106882A (ko) | 2011-09-29 |
US8753793B2 (en) | 2014-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4355011B2 (ja) | 液浸リソグラフィー用共重合体及び組成物 | |
JP5588095B2 (ja) | 半導体リソグラフィー用共重合体とその製造方法 | |
JP5631550B2 (ja) | フォトレジスト用共重合体の製造方法 | |
JP5030474B2 (ja) | 半導体リソグラフィー用樹脂組成物 | |
JP4976229B2 (ja) | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 | |
JP5914241B2 (ja) | 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物 | |
JP5107089B2 (ja) | 液浸用フォトレジスト高分子化合物及び組成物 | |
JP5308660B2 (ja) | 半導体リソグラフィー用重合体の製造方法 | |
WO2010082232A1 (ja) | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 | |
JP5138234B2 (ja) | 半導体リソグラフィー用樹脂の製造方法 | |
JP2010150447A (ja) | ラクトン骨格を含む単量体、高分子化合物及びフォトレジスト組成物 | |
JP5743858B2 (ja) | 低分子量レジスト用共重合体の製造方法 | |
JP2008106084A (ja) | 半導体リソグラフィー用共重合体、組成物並びに該共重合体の製造方法 | |
JP5653583B2 (ja) | 半導体リソグラフィー用共重合体の製造方法 | |
JP5085263B2 (ja) | フォトレジスト用高分子化合物及びフォトレジスト組成物 | |
JP5384421B2 (ja) | 半導体リソグラフィー用共重合体の製造方法 | |
JP5553488B2 (ja) | リソグラフィー用重合体並びにその製造方法 | |
WO2014002810A1 (ja) | 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法 | |
JP7236830B2 (ja) | 単量体、フォトレジスト用樹脂、フォトレジスト用樹脂組成物、及びパターン形成方法 | |
JP5207878B2 (ja) | リソグラフィー用重合体の製造方法、及びパターン形成方法 | |
JP5562651B2 (ja) | 化学増幅型フォトレジスト用樹脂及びその製造方法 | |
WO2009113228A1 (ja) | ラクトン骨格を含む単量体、高分子化合物及びフォトレジスト組成物 | |
JP5250495B2 (ja) | フォトレジスト用共重合体の製造法 | |
JP2007269898A (ja) | 樹脂の精製方法 | |
JP2008019366A (ja) | 半導体レジスト樹脂の保護膜用樹脂及び半導体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09838202 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13132375 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20117016465 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09838202 Country of ref document: EP Kind code of ref document: A1 |