JP5574395B2 - 複合材料及びその製造方法 - Google Patents
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Description
λg=λ0/(εr・μr)1/2
で表すことができるため、比誘電率εr及び比透磁率μrが大きいほど波長短縮率が大きくなり電子部品や回路基板の小型化が可能となることが知られている。そこで、近年粉末を単体として使用するのではなく、粉末を有機ビヒクルと混合したペースト、樹脂材料と複合化した複合材料として高特性の電子部品・回路基板を得ることが行われている。例えば、高周波特性の良い磁性粉末を樹脂に混合、分散させて複合材料とし、この複合材料を用いて磁気特性の高い電子部品や回路基板を得るのである。
d = 1/(π・f・μ0・μr・σ)1/2
で表される表皮深さdよりも磁性粉末の直径を小さくすることが効果的である。ここで、fは信号周波数、σは磁性粉末の導電率、μ0は真空の透磁率である。
金属元素を添加した平均粒径0.25μmのパーマロイ磁性粉末を、キシレンおよびシクロペンタノン4:1混合液に被覆層となる有機化合物として固形分33%に希釈したポリオレフィン樹脂を溶解した分散液に混合し、さらに分散媒体として平均粒径が200μmのジルコニアビーズを添加し、この状態で遊星攪拌を60分間実施して絶縁材料で被覆した微粒子スラリーを得た。
実施例1において、本発明の有機化合物による絶縁被覆を行わなかったものを比較例1とした。キシレンおよびシクロペンタノン4:1混合液に被覆層となる高分子ポリマーとしてポリオレフィン樹脂を溶解した分散液に混合し、さらに分散媒体として平均粒径が200μmのジルコニアビーズを添加し、この状態で遊星攪拌を30分間実施して磁性粉末スラリーを得た。このようにして得られたスラリーにポリシクロオレフィン樹脂を固形分比率40%に希釈して得た樹脂ワニスを添加しさらに遊星攪拌で5分間混合した。遊星攪拌時の公転速度はいずれも2000rpm、自転速度は800rpmとした。
Claims (9)
- 絶縁材料中に扁平状の微粒子が分散した複合材料において、前記絶縁材料と実質的に同一成分の絶縁材料で予め被覆されている扁平状の前記微粒子を10体積%以上含有し、1GHzの周波数における比透磁率μrが1よりも大きく、かつ損失正接tanδが0.05以下であり、前記微粒子のアスペクト比が2以上、厚さが0.001〜5μm、かつ長さが0.002〜10μmであり、さらに、
前記微粒子が、アルミニウム(Al)、マンガン(Mn)、シリコン(Si)、マグネシウム(Mg)、クロム(Cr)、ニッケル(Ni)、モリブデン(Mo)、銅(Cu)、鉄(Fe)、コバルト(Co)、亜鉛(Zn)、スズ(Sn)、銀(Ag)、チタン(Ti)およびジルコニウム(Zr)、ニッケル(Ni)、パーマロイ(Ni−Fe)鉄(Fe)、鉄(Fe)−シリコン(Si)系合金、鉄(Fe)−窒素(N)系合金、鉄(Fe)−炭素(C)系合金、鉄(Fe)−ホウ素(B)系合金、鉄(Fe)−リン(P)系合金、鉄(Fe)−アルミニウム(Al)系合金、鉄(Fe)−アルミニウム(Al)−シリコン(Si)系合金、ゲーサイト(FeOOH)、ヘマタイト(Fe2O3)、マグネタイト(Fe3O4)、マンガン(Mn)−亜鉛(Zn)フェライト、ニッケル(Ni)−亜鉛(Zn)フェライト、コバルト(Co)フェライト、マンガン(Mn)フェライト、ニッケル(Ni)フェライト、銅(Cu)フェライト、亜鉛(Zn)フェライト、マグネシウム(Mg)フェライト、リチウム(Li)フェライト、マンガン(Mn)−マグネシウム(Mg)フェライト、銅(Cu)−亜鉛(Zn)フェライト、マンガン(Mn)−亜鉛(Zn)フェライトからなる群から選ばれる少なくとも1種を含み、
前記絶縁材料が、ポリイミド樹脂、ポリベンゾオキサゾール樹脂、ポリフェニレン樹脂、ポリベンゾシクロブテン樹脂、ポリアリーレンエーテル樹脂、ポリシロキサン樹脂、エポキシ樹脂、ウレタン樹脂、ポリエステル樹脂、ポリエステルウレタン樹脂、フッ素樹脂、ポリオレフィン樹脂、ポリシクロオレフィン樹脂、シアネート樹脂、ポリフェニレンエーテル樹脂、およびポリスチレン樹脂のうち少なくとも一つ、もしくはAl2O3、SiO2、TiO2、2MgO・SiO2、MgTiO3、CaTiO3、SrTiO3、BaTiO3、3Al2O3・2SiO2、ZrO2、SiC、AlNのセラミックスからなる群より選ばれる少なくとも一つを含むことを特徴とする複合材料。 - 前記微粒子が、チタン(Ti)、バナジウム(V)、クロム(Cr)、マンガン(Mn)、コバルト(Co)、銅(Cu)、亜鉛(Zn)、ニオブ(Nb)、モリブデン(Mo)、インジウム(In)、スズ(Sn)のうちいずれか一種類以上の金属元素を添加した金属粉末であることを特徴とする請求項1に記載の複合材料。
- 絶縁材料中に微粒子が分散した複合材料において、使用時に印加される電界に対して垂直方向と平行方向の誘電率が異なることを特徴とする請求項1または2に記載の複合材料。
- 絶縁材料中に微粒子が分散した複合材料において、複合材料の体積抵抗率が、5×105Ω・cm以上であることを特徴とする請求項1〜3のいずれかに記載の複合材料。
- 絶縁材料中に前記絶縁材料と実質的に同一成分の絶縁材料が被覆された扁平状の微粒子が分散した複合材料の製造方法であって、
微粒子を、絶縁材料を溶解した溶剤中で分散媒体を用いて攪拌することにより、微粒子を機械的に扁平状に変形させる工程と、前記絶縁材料によって表面を被覆した前記扁平状微粒子を得る工程とを同時に行うことで、表面を絶縁材料によって被覆された扁平状微粒子スラリーを製造する工程を有し、
前記微粒子が、アルミニウム(Al)、マンガン(Mn)、シリコン(Si)、マグネシウム(Mg)、クロム(Cr)、ニッケル(Ni)、モリブデン(Mo)、銅(Cu)、鉄(Fe)、コバルト(Co)、亜鉛(Zn)、スズ(Sn)、銀(Ag)、チタン(Ti)およびジルコニウム(Zr)、ニッケル(Ni)、パーマロイ(Ni−Fe)鉄(Fe)、鉄(Fe)−シリコン(Si)系合金、鉄(Fe)−窒素(N)系合金、鉄(Fe)−炭素(C)系合金、鉄(Fe)−ホウ素(B)系合金、鉄(Fe)−リン(P)系合金、鉄(Fe)−アルミニウム(Al)系合金、鉄(Fe)−アルミニウム(Al)−シリコン(Si)系合金、ゲーサイト(FeOOH)、ヘマタイト(Fe2O3)、マグネタイト(Fe3O4)、マンガン(Mn)−亜鉛(Zn)フェライト、ニッケル(Ni)−亜鉛(Zn)フェライト、コバルト(Co)フェライト、マンガン(Mn)フェライト、ニッケル(Ni)フェライト、銅(Cu)フェライト、亜鉛(Zn)フェライト、マグネシウム(Mg)フェライト、リチウム(Li)フェライト、マンガン(Mn)−マグネシウム(Mg)フェライト、銅(Cu)−亜鉛(Zn)フェライト、マンガン(Mn)−亜鉛(Zn)フェライトからなる群から選ばれる少なくとも1種を含み、
前記絶縁材料が、ポリイミド樹脂、ポリベンゾオキサゾール樹脂、ポリフェニレン樹脂、ポリベンゾシクロブテン樹脂、ポリアリーレンエーテル樹脂、ポリシロキサン樹脂、エポキシ樹脂、ウレタン樹脂、ポリエステル樹脂、ポリエステルウレタン樹脂、フッ素樹脂、ポリオレフィン樹脂、ポリシクロオレフィン樹脂、シアネート樹脂、ポリフェニレンエーテル樹脂、およびポリスチレン樹脂のうち少なくとも一つ、もしくはAl2O3、SiO2、TiO2、2MgO・SiO2、MgTiO3、CaTiO3、SrTiO3、BaTiO3、3Al2O3・2SiO2、ZrO2、SiC、AlNのセラミックスからなる群より選ばれる少なくとも一つを含むことを特徴とする複合材料の製造方法。 - 絶縁材料中に前記絶縁材料と実質的に同一成分の絶縁材料が被覆された扁平状の微粒子が分散した複合材料の製造方法であって、
表面を絶縁材料によって被覆した扁平状微粒子スラリーに、前記絶縁材料と実質的に同一成分の絶縁材料を添加する工程を有することを特徴とする請求項5に記載の複合材料の製造方法。 - 微粒子を、絶縁材料を溶解した溶剤中で攪拌することにより、前記絶縁材料によって被覆した前記微粒子を得る工程と、得られた絶縁材料で被覆された微粒子を、前記絶縁材料と実質的に同一成分の絶縁材料中に分散させる製造方法であって、前記微粒子を、絶縁材料を溶解した溶剤中で攪拌する際に、分散媒体を用いて攪拌することにより、機械的な力を付与し微粒子を扁平状に変形させる工程を含む、製造方法によって製造されたことを特徴とする請求項1〜4のいずれかに記載の複合材料。
- 請求項1〜4、7のいずれかに記載の複合材料を少なくとも含むことを特徴とする電子部品。
- 請求項1〜4、7のいずれかに記載の複合材料を少なくとも含むことを特徴とする回路基板。
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