JP5564311B2 - 半導体装置の製造方法、基板処理装置及び基板の製造方法 - Google Patents

半導体装置の製造方法、基板処理装置及び基板の製造方法 Download PDF

Info

Publication number
JP5564311B2
JP5564311B2 JP2010086380A JP2010086380A JP5564311B2 JP 5564311 B2 JP5564311 B2 JP 5564311B2 JP 2010086380 A JP2010086380 A JP 2010086380A JP 2010086380 A JP2010086380 A JP 2010086380A JP 5564311 B2 JP5564311 B2 JP 5564311B2
Authority
JP
Japan
Prior art keywords
gas
gas supply
reaction chamber
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010086380A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003885A (ja
JP2011003885A5 (enExample
Inventor
義則 今井
英治 柴田
隆史 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2010086380A priority Critical patent/JP5564311B2/ja
Priority to US12/782,090 priority patent/US20100297832A1/en
Publication of JP2011003885A publication Critical patent/JP2011003885A/ja
Priority to US13/732,460 priority patent/US9177799B2/en
Publication of JP2011003885A5 publication Critical patent/JP2011003885A5/ja
Application granted granted Critical
Publication of JP5564311B2 publication Critical patent/JP5564311B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010086380A 2009-05-19 2010-04-02 半導体装置の製造方法、基板処理装置及び基板の製造方法 Active JP5564311B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010086380A JP5564311B2 (ja) 2009-05-19 2010-04-02 半導体装置の製造方法、基板処理装置及び基板の製造方法
US12/782,090 US20100297832A1 (en) 2009-05-19 2010-05-18 Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method
US13/732,460 US9177799B2 (en) 2009-05-19 2013-01-02 Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009120882 2009-05-19
JP2009120882 2009-05-19
JP2010086380A JP5564311B2 (ja) 2009-05-19 2010-04-02 半導体装置の製造方法、基板処理装置及び基板の製造方法

Publications (3)

Publication Number Publication Date
JP2011003885A JP2011003885A (ja) 2011-01-06
JP2011003885A5 JP2011003885A5 (enExample) 2013-05-16
JP5564311B2 true JP5564311B2 (ja) 2014-07-30

Family

ID=43124833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010086380A Active JP5564311B2 (ja) 2009-05-19 2010-04-02 半導体装置の製造方法、基板処理装置及び基板の製造方法

Country Status (2)

Country Link
US (2) US20100297832A1 (enExample)
JP (1) JP5564311B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564311B2 (ja) * 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法
JP5529634B2 (ja) * 2010-06-10 2014-06-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板の製造方法
JP5732284B2 (ja) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP5735304B2 (ja) * 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
JP2012174782A (ja) * 2011-02-18 2012-09-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US9082694B2 (en) 2011-02-24 2015-07-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5901978B2 (ja) * 2011-04-11 2016-04-13 株式会社日立国際電気 基板処理装置、基板処理装置制御プログラム、及び半導体装置の製造方法
TWI442012B (zh) * 2011-11-17 2014-06-21 Kern Energy Entpr Co Ltd 垂直式熱處理爐結構
JP6066571B2 (ja) * 2012-02-17 2017-01-25 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP6076615B2 (ja) * 2012-04-27 2017-02-08 東京エレクトロン株式会社 不純物拡散方法、基板処理装置及び半導体装置の製造方法
JP6019938B2 (ja) * 2012-08-30 2016-11-02 富士電機株式会社 炭化珪素半導体装置の製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR102494614B1 (ko) * 2015-03-20 2023-02-02 어플라이드 머티어리얼스, 인코포레이티드 3d 형상추종성 처리를 위한 원자 층 프로세스 챔버
CN110870050A (zh) * 2017-09-25 2020-03-06 株式会社国际电气 衬底处理装置、石英反应管、清洁方法以及程序
JP6820816B2 (ja) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、半導体装置の製造方法、及びプログラム
US20210317574A1 (en) * 2020-04-14 2021-10-14 Wonik Ips Co., Ltd. Substrate processing apparatus
JP7741205B2 (ja) * 2021-06-11 2025-09-17 ジュスン エンジニアリング カンパニー リミテッド パワー半導体素子の製造方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
EP0235966B1 (en) * 1986-02-07 1994-05-04 Canon Kabushiki Kaisha Light receiving member
JPS62205361A (ja) * 1986-03-05 1987-09-09 Canon Inc 電子写真用光受容部材及びその製造方法
JP2550024B2 (ja) 1986-03-17 1996-10-30 富士通株式会社 減圧ｃｖｄ装置
JPH02262324A (ja) * 1989-03-31 1990-10-25 Hoya Corp Ｘ線透過膜およびその製造方法
JP2556621B2 (ja) * 1990-12-11 1996-11-20 ホーヤ株式会社 炭化ケイ素膜の成膜方法
JPH07118854A (ja) 1993-10-22 1995-05-09 Hoya Corp 炭化ケイ素膜の形成方法
JP2000297375A (ja) * 1999-04-09 2000-10-24 Hoya Corp 炭化珪素膜の製造方法及び製造装置、並びにｘ線マスクの製造方法
US20030164143A1 (en) * 2002-01-10 2003-09-04 Hitachi Kokusai Electric Inc. Batch-type remote plasma processing apparatus
JP4595702B2 (ja) * 2004-07-15 2010-12-08 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006073997A (ja) * 2004-08-02 2006-03-16 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
CN101032006A (zh) * 2005-02-17 2007-09-05 株式会社日立国际电气 半导体器件的制造方法以及衬底处理装置
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
JP2006321696A (ja) 2005-05-20 2006-11-30 Hitachi Cable Ltd 炭化珪素単結晶の製造方法
US8466049B2 (en) * 2005-07-29 2013-06-18 Hitachi Kokusai Electric Inc. Semiconductor device producing method with selective epitaxial growth
JP4677873B2 (ja) * 2005-10-05 2011-04-27 株式会社デンソー 成膜装置
KR20080089403A (ko) * 2005-12-22 2008-10-06 에이에스엠 아메리카, 인코포레이티드 도핑된 반도체 물질들의 에피택시 증착
JPWO2007116768A1 (ja) * 2006-03-27 2009-08-20 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP4753841B2 (ja) * 2006-11-10 2011-08-24 株式会社日立国際電気 半導体デバイスの製造方法
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
US8012885B2 (en) * 2007-04-02 2011-09-06 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device
KR20090033788A (ko) * 2007-10-01 2009-04-06 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법과 기판 처리 장치
JP4924395B2 (ja) * 2007-12-07 2012-04-25 東京エレクトロン株式会社 処理装置及び処理方法
JP4611414B2 (ja) * 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5213594B2 (ja) * 2008-09-04 2013-06-19 東京エレクトロン株式会社 熱処理装置
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5384291B2 (ja) * 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP2010141223A (ja) * 2008-12-15 2010-06-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2010153467A (ja) * 2008-12-24 2010-07-08 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP5658463B2 (ja) * 2009-02-27 2015-01-28 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5730496B2 (ja) * 2009-05-01 2015-06-10 株式会社日立国際電気 熱処理装置、半導体デバイスの製造方法および基板処理方法
JP2010287877A (ja) * 2009-05-11 2010-12-24 Hitachi Kokusai Electric Inc 熱処理装置および熱処理方法
JP5564311B2 (ja) 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法

Also Published As

Publication number Publication date
US9177799B2 (en) 2015-11-03
JP2011003885A (ja) 2011-01-06
US20100297832A1 (en) 2010-11-25
US20130122692A1 (en) 2013-05-16

Similar Documents

Publication Publication Date Title
JP5564311B2 (ja) 半導体装置の製造方法、基板処理装置及び基板の製造方法
JP5393895B2 (ja) 半導体装置の製造方法及び基板処理装置
JP5562409B2 (ja) 半導体装置の製造方法及び基板製造方法及び基板処理装置
US20110306212A1 (en) Substrate processing apparatus, semiconductor device manufacturing method and substrate manufacturing method
US8071477B2 (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP2012195565A (ja) 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2011205059A (ja) 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5560093B2 (ja) 基板処理装置及び半導体装置の製造方法及び基板製造方法
US20100282166A1 (en) Heat treatment apparatus and method of heat treatment
US20230369043A1 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KR20230006435A (ko) 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
JP2012178492A (ja) 基板処理装置およびガスノズルならびに基板若しくは半導体デバイスの製造方法
JP2012169668A (ja) 半導体装置の製造方法
JP4851647B2 (ja) 酸化層及びシリコン層のインサイチュウ成長
JP2013197474A (ja) 基板処理方法と半導体装置の製造方法、および基板処理装置
US8771416B2 (en) Substrate processing apparatus with an insulator disposed in the reaction chamber
US20220301851A1 (en) Method of manufacturing semiconductor device, substrate processing method, recording medium, and substrate processing apparatus
JP2013207057A (ja) 基板処理装置、基板の製造方法、及び、基板処理装置のクリーニング方法
JP2013197507A (ja) 基板処理装置および基板処理方法ならびに半導体装置の製造方法
JP2014060327A (ja) 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2012186275A (ja) 基板処理装置及び半導体装置の製造方法
JP2012175072A (ja) 基板処理装置
JP2012204691A (ja) 半導体装置の製造方法及び基板処理装置
JP2014179550A (ja) 基板処理装置
JP2014123616A (ja) 基板処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130329

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140401

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140526

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140610

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140616

R150 Certificate of patent or registration of utility model

Ref document number: 5564311

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250