US20100297832A1 - Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method - Google Patents

Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method Download PDF

Info

Publication number
US20100297832A1
US20100297832A1 US12/782,090 US78209010A US2010297832A1 US 20100297832 A1 US20100297832 A1 US 20100297832A1 US 78209010 A US78209010 A US 78209010A US 2010297832 A1 US2010297832 A1 US 2010297832A1
Authority
US
United States
Prior art keywords
gas
gas supply
reaction chamber
chlorine
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/782,090
Other languages
English (en)
Inventor
Yoshinori Imai
Hideji SHIBATA
Takafumi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Assigned to HITACHI KOKUSAI ELECTRIC, INC. reassignment HITACHI KOKUSAI ELECTRIC, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIBATA, HIDEJI, IMAI, YOSHINORI, SASAKI, TAKAFUMI
Publication of US20100297832A1 publication Critical patent/US20100297832A1/en
Priority to US13/732,460 priority Critical patent/US9177799B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a semiconductor device manufacturing method, substrate processing apparatus, and substrate manufacturing method.
  • silicon carbide has advantageous characteristics such as a wide energy band gap, a high dielectric strength voltage, and a high heat conductivity as compared with silicon (Si), silicon carbide attracts attention as an element material, particularly for an element of a power device.
  • SiC silicon carbide
  • a SiC epitaxial film is formed in a high temperature range of about 1500° C. to about 1800° C. as compared with a temperature range of 900° C. to 1200° C.
  • Epitaxial films can be formed by arranging several substrates to about tens of substrates on a susceptor which is heated to a film forming temperature, for example, by high-frequency waves, and supplying a silicon-containing gas (hereinafter also referred to as a Si source gas), a carbon-containing gas (hereinafter also referred to as a C source gas), and a carrier gas to the substrates.
  • a silicon-containing gas hereinafter also referred to as a Si source gas
  • C source gas carbon-containing gas
  • Propane (C 3 H 8 ) gas or ethylene (C 2 H 4 ) gas is widely used as a C source gas
  • monosilane (SiH 4 ) gas is widely used as a Si source gas
  • hydrogen (H 2 ) gas is widely used as a carrier gas.
  • hydrogen chloride (HCl) gas may be added to a source gas, or a material including chlorine (Cl) in its formula such as trichlorosilane (SiHCl 3 ) gas or tetrachlorosilane (SiCl 4 , silicon tetrachloride) gas may be used as a Si source (for example, refer to Non-patent Document 1).
  • FIG. 1 is an exemplary schematic view illustrating a relationship between a structure of a pancake type susceptor and positions of substrates.
  • the diameter and number of substrates that can be placed on the susceptor are limited to the diameter of the susceptor. Therefore, if the diameter of the substrates is large, the number and total area of the substrates that can be processed at a time are reduced. For example, in the case of FIG.
  • the number of the substrates that can be processed at a time is reduced from twenty to eight, and the total area that can be processed at a time is reduced by about 10%.
  • a gas supply nozzle is installed in a reaction chamber to introduce a source gas and uniformly supply the source gas to stacked substrates.
  • the source gas can be efficiently and uniformly supplied to a plurality of substrates which are vertically stacked, and thus the uniformity of a film thickness can be improved between the substrates and in the surfaces of the substrates.
  • Non-patent Document 1 P. VAN DER PUTTE, L. J. GILING and J. BLOEM, ⁇ GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOUR DEPOSITION SYSTEMS; THE INFLUENCE OF THERMAL DIFFUSION AND TEMPERATURE GRADIENT ⁇ , Journal of Crystal growth, vol. 31, 1975, pp. 299-307.
  • the thermal decomposition temperature of a Si source gas is known to be about 950° C. to 1050° C., and even tetrachlorosilane (SiCl 4 ) including chlorine is known to be thermally decomposed at about 1150° C. to 1250° C.
  • SiC is epitaxially grown at about 1500° C. to about 1800° C. Properties of Si source gases are exemplarily shown in FIG. 9 .
  • a gas supply nozzle for supplying a Si source gas is installed in a reaction chamber in a manner such that the gas supply nozzle extends along a region where substrates are stacked for a batch process, that is, a region where substrates are arranged.
  • the inside temperature of the gas supply nozzle becomes equal to the inside temperature of the reaction chamber, that is, the inside temperature of the gas supply nozzle becomes higher than the decomposition temperature of the Si source gas.
  • the Si source gas when the Si source gas is supplied into the reaction chamber, the Si source gas may decompose while passing through the gas supply nozzle, and thus the Si source gas may be insufficiently supplied into the reaction chamber.
  • Si due to the decomposition of the Si source gas, Si may be deposited on the inner wall of the gas supply nozzle; the inside of the gas supply nozzle may be clogged by deposited Si; an ejection hole formed in the gas supply nozzle may be clogged by deposited Si; and thus the Si source gas may not be supplied into the reaction chamber.
  • Si deposited on the gas supply nozzle may enter the inside of the reaction chamber to contaminate the inside of the reaction chamber.
  • the inside temperature of the gas supply nozzle is higher than the melting point of extracted deposited Si, some of deposited Si may melt and flow to a substrate to cause a crystalline defect on the surface of the substrate.
  • An object of the present invention is to provide a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method that are designed to suppress decomposition of a silicon (Si) source gas in a gas supply nozzle and deposition of Si on a part such as the inner wall of the gas supply nozzle when silicon carbide (SiC) epitaxial films are grown in a vertical type substrate processing apparatus, in which a plurality of substrates are vertically stacked in a reaction chamber and the gas supply nozzle disposed at the inside of the reaction chamber in a region where the substrates are arranged is heated to a temperature higher than the decomposition temperature of the Si source gas.
  • Si silicon
  • SiC silicon carbide
  • a substrate processing apparatus comprising: a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or supply at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system and comprising a first gas supply outlet supplying a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system and comprising at least a second gas supply outlet; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first gas supply system so that at least the silicon-containing gas and the chlorine-containing gas or at least the gas containing silicon and chlorine is supplied into the reaction chamber from the first gas supply outlet of the
  • a semiconductor device manufacturing method comprising: loading a plurality of substrates stacked at predetermined intervals into a reaction chamber; forming silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and unloading the substrates from the reaction chamber.
  • a substrate manufacturing method comprising: loading a plurality of substrates stacked at predetermined intervals into a reaction chamber; forming silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and unloading the substrates from the reaction chamber.
  • FIG. 1 is an exemplary schematic view illustrating a relationship between a structure of a pancake type susceptor and positions of substrates.
  • FIG. 2 is a perspective view illustrating a substrate processing apparatus 10 according to a first embodiment of the present invention.
  • FIG. 3 is a side sectional view illustrating a process furnace 40 of the substrate processing apparatus 10 according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view illustrating the process furnace 40 of the substrate processing apparatus 10 according to the first embodiment of the present invention.
  • FIG. 5 is a schematic view illustrating the process furnace 40 of the substrate processing apparatus 10 and the peripheral structure of the process furnace 40 according to the first embodiment of the present invention.
  • FIG. 6 is an exemplary block diagram illustrating a configuration for controlling each part of the substrate processing apparatus 10 according to the first embodiment of the present invention.
  • FIG. 7 is an exemplary graph showing a relationship between a growth rate and a gas concentration in a SiCl 4 gas-H 2 gas reaction system.
  • FIG. 8 is an exemplary graph showing calculation results of equilibrium concentrations of a SiCl 4 gas-H 2 gas reaction system.
  • FIG. 9 is an exemplary table showing properties of various Si source gases.
  • FIG. 10 is an exemplary graph showing calculation results of equilibrium concentrations of reaction species when H 2 gas is used as a carrier gas.
  • FIG. 11 is an exemplary graph showing calculation results of equilibrium concentrations of reaction species when argon (Ar) gas is used as a carrier gas.
  • FIG. 12 is an exemplary view illustrating a gas supply system of the substrate processing apparatus 10 according to the first embodiment of the present invention.
  • FIG. 13 is an exemplary view illustrating a gas supply system of a substrate processing apparatus 10 according to a third embodiment of the present invention.
  • FIG. 2 is a perspective view illustrating an example of a substrate processing apparatus 10 configured to form a silicon carbide (SiC) according to the current embodiment.
  • the substrate processing apparatus 10 is configured as a batch type vertical heat treatment apparatus.
  • the substrate processing apparatus 10 includes a case 12 in which main parts such as a process furnace 40 are disposed.
  • FOUPs Front Opening Unified Pods, hereinafter referred to as pods
  • pods 16 which are substrate containers configured to accommodate substrates such as wafers 14 (refer to FIG. 2 ) made of silicon (Si) or silicon carbide (SiC), are used as wafer carriers.
  • a pod stage 18 is disposed at the front side of the case 12 (right in FIG. 2 ).
  • Pods 16 are carried to and placed on the pod stage 18 .
  • twenty five wafers 14 are accommodated in each pod 16 .
  • Each of the pods 16 is configured to be placed on the pod stage 18 in a state where a cap (not shown) of the pod 16 is closed.
  • a pod carrying device 20 is disposed. Near the pod carrying device 20 , a pod shelf 22 , a pod opener 24 , and a substrate counter 26 are disposed.
  • the pod shelf 22 is disposed above the pod opener 24 and is configured such that a plurality of pods 16 can be placed and held on the pod shelf 22 .
  • the substrate counter 26 is disposed close to the pod opener 24 .
  • the pod carrying device 20 is configured to carry a pod 16 among the pod stage 18 , the pod shelf 22 , and the pod opener 24 .
  • the pod opener 24 is used to open a cap of a pod 16 . After the cap of the pod 16 is opened, the substrate counter 26 is used to count the number of wafers 14 disposed in the pod 16 .
  • a substrate transfer machine 28 and a boat 30 being a substrate holding tool are disposed.
  • the substrate transfer machine 28 includes an arm (tweezers) 32 capable of picking up wafers 14 , for example, five wafers 14 .
  • wafers 14 can be carried between a pod 16 placed at the pod opener 24 and the boat 30 .
  • the boat 30 is made of a heat-resistant material such as graphite or silicon carbide and is configured to hold a plurality of vertically stacked wafers 14 in a manner such that the wafers 14 are horizontally oriented and vertically arranged with the centers of the wafers 14 being aligned with each other.
  • a boat insulating part 34 is disposed as a circular disk shaped insulating member made of a heat-resistant material such as quartz or silicon carbide, so as to prevent heat transfer from a susceptor 48 (described later) to the lower side of a process furnace 40 (refer to FIG. 3 ).
  • the process furnace 40 is disposed.
  • the process furnace 40 is configured so that the boat 30 in which a plurality of wafers 14 are held can be loaded into the process furnace 40 through the bottom side of the process furnace 40 .
  • FIG. 3 is a side sectional view illustrating the process furnace 4 of the substrate processing apparatus 10 according to the current embodiment
  • FIG. 4 is a cross-sectional view illustrating the process furnace 4
  • the process furnace 40 includes an outer tube 42 as a cylindrical reaction tube.
  • the outer tube 42 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC) and has a cylindrical shape with a closed top side and an opened bottom side.
  • a reaction chamber 44 is formed in the cylindrical hollow part of the inside of the outer tube 42 .
  • the reaction chamber 44 is configured to accommodate vertically stacked wafers 14 made of a material such as silicon or silicon carbide, in a state where the wafers 14 are horizontally oriented and vertically arranged in the boat 30 with the centers of the wafers 14 being aligned with each other.
  • a manifold 46 is installed concentrically with the outer tube 42 .
  • the manifold 46 is made of a material such as stainless steel and has a cylindrical shape with opened top and bottom sides.
  • the manifold 46 is installed to support the outer tube 42 from the bottom side of the outer tube 42 .
  • an O-ring is installed as a seal member.
  • the manifold 46 is supported by a holder (not shown) so that the outer tube 42 can be vertically fixed.
  • a reaction vessel is mainly constituted by the outer tube 42 and the manifold 46 .
  • the process furnace 40 includes the susceptor 48 as a heating part, and a magnetic coil (induction coil) 50 as a magnetic field generating unit.
  • the susceptor 48 has a cylindrical shape and is installed in the reaction chamber 44 in a manner such that the susceptor 48 surrounds the wafers 14 held in the boat 30 .
  • the magnetic coil 50 is installed outside the outer tube 42 to surround the outer tube 42 .
  • the susceptor 48 is configured to generate heat in response to a magnetic field generated by the magnetic coil 50 . As the susceptor 48 generates heat, the inside of the reaction chamber 44 is heated by radiation heat.
  • a temperature sensor (not shown) is installed as a temperature detector configured to detect the inside temperature of the reaction chamber 44 .
  • the magnetic coil 50 and the temperature sensor are electrically connected to a temperature control unit 52 (refer to FIG. 6 ).
  • the temperature control unit 52 is configured to adjust power supply to the magnetic coil 50 based on temperature information detected by the temperature sensor so as to obtain desired temperature distribution in the reaction chamber 44 at a desired time.
  • an inner insulating wall 54 to prevent heat transfer from the susceptor 48 to the outer tube 42 or/and the outside of the outer tube 42 .
  • an outer insulating wall 56 having a structure such as a water cooling structure is installed in a manner such that the outer insulating wall 56 encloses the reaction chamber 44 so as to prevent heat transfer from the inside of the reaction chamber 44 to the outside area.
  • an electric field seal 58 is installed at the outside of the outer insulating wall 56 to prevent leakage of a magnetic field generated by the magnetic coil 50 to the outside area.
  • a first gas supply nozzle 60 a , a second gas supply nozzle 60 b , and a fourth gas supply nozzle 60 d are connected to the manifold 46 as a first gas supply unit, a second gas supply unit, and a fourth gas supply unit.
  • Each of the first gas supply nozzle 60 a , the second gas supply nozzle 60 b , and the fourth gas supply nozzle 60 d is L-shaped.
  • Each of the upstream sides of the first gas supply nozzle 60 a , the second gas supply nozzle 60 b , and the fourth gas supply nozzle 60 d penetrates the sidewall of the manifold 46 in a horizontal direction.
  • the downstream sides of the first and second gas supply nozzles 60 a and 60 b are erected along the inner wall of the susceptor 48 and extended to about the upper end of the boat 30 .
  • the downstream side of the fourth gas supply nozzle 60 d is erected along the inner wall of the outer tube 42 and extended to about the lower end of the boat 30 .
  • Gas flow passages are formed in the first gas supply nozzle 60 a , the second gas supply nozzle 60 b , and the fourth gas supply nozzle 60 d , respectively.
  • first gas supply holes 68 a and second gas supply holes 68 b are formed as first gas supply outlets and second gas supply outlets in a manner such that the first and second gas supply holes 68 a and 68 b are vertically arranged, so as to supply gas to main surfaces of the wafers 14 held in the boat 30 in a horizontal direction.
  • a fourth gas supply hole 68 d is formed as a fourth gas supply outlet to supply gas in a vertical direction.
  • first gas supply holes 68 a as the number of the wafers 14 held in the boat 30 and as many second gas supply holes 68 b as the number of the wafers 14 held in the boat 30 , the uniformity of in-surface film thicknesses of the wafers 14 can be easily controlled, and thus this structure may be preferable.
  • the downstream side of a first gas supply pipe 62 a which is configured to supply at least tetrachlorosilane (SiCl 4 ) gas as a gas containing silicon and chlorine is joined with the downstream side of a third gas supply pipe 62 c which is configured to supply at least propane (C 3 H 8 ) gas as a gas containing carbon, and the joined first and third gas supply pipes 62 a and 62 c are connected to the upstream side of the first gas supply nozzle 60 a .
  • the downstream side of a second gas supply pipe 62 b which is configured to supply at least hydrogen (H 2 ) gas as a reducing gas is connected to the upstream side of the second gas supply nozzle 60 b .
  • the downstream side of a fourth gas supply pipe 62 d which is configured to supply at least a rare gas such as argon (Ar) as a purge gas is connected to the upstream side of the fourth gas supply nozzle 60 d.
  • the structures of the first to fourth gas supply pipes 62 a , 62 b , 62 c , and 62 d are illustrated in FIG. 12 .
  • an Ar gas supply pipe 72 a configured to supply Ar gas as a carrier gas
  • the downstream end of a H 2 gas supply pipe 82 a configured to supply a gas containing hydrogen such as H 2 gas as a carrier gas (or a reducing gas)
  • the downstream end of a SiCl 4 gas supply pipe 92 a configured to supply SiCl 4 gas as a gas containing silicon and chlorine are connected to the upstream side of the first gas supply pipe 62 a .
  • an Ar gas supply source 75 a a mass flow controller (MFC) 74 a as a gas flow rate control device, and a valve 73 a are sequentially installed from the upstream side of the Ar gas supply pipe 72 a .
  • MFC mass flow controller
  • a H 2 gas supply source 85 a At the H 2 gas supply pipe 82 a , a H 2 gas supply source 85 a , an MFC 84 a , and a valve 83 a are sequentially installed from the upstream side of the H 2 gas supply pipe 82 a .
  • a SiCl 4 gas supply source 95 a At the SiCl 4 gas supply pipe 92 a , a SiCl 4 gas supply source 95 a , an MFC 94 a , and a valve 93 a are sequentially installed from the upstream side of the SiCl 4 gas supply pipe 92 a.
  • a H 2 gas supply source 65 b As a gas flow rate control device, and a valve 63 b are sequentially installed from the upstream side of the second gas supply pipe 62 b.
  • H 2 gas supply pipe 72 c configured to supply a gas containing hydrogen such as H 2 gas as a carrier gas (or a reducing gas), and the downstream end of a C 3 H 8 gas supply pipe 82 c configured to supply propane (C 3 H 8 ) gas as a gas containing carbon are connected to the upstream side of the third gas supply pipe 62 c .
  • a H 2 gas supply source 75 c an MFC 74 c as a gas flow rate control device, and a valve 73 c are sequentially installed from the upstream side of the H 2 gas supply pipe 72 c .
  • a C 3 H 8 gas supply source 85 c is sequentially installed from the upstream side of the C 3 H 8 gas supply pipe 82 c.
  • an Ar gas supply source 65 d an MFC 64 d as a gas flow rate control device, and a valve 63 d are installed sequentially from the upstream side of the fourth gas supply pipe 62 d.
  • a gas flow rate control unit 78 (refer to FIG. 6 ) is electrically connected to the valves 73 a , 83 a , 93 a , 63 b , 73 c , 83 c , and 63 d , and the MFCs 74 a , 84 a , 94 a , 64 b , 74 c , 84 c , and 64 d .
  • the gas flow rate control unit 78 is configured to control the supply flow rates of gases so as to obtain desired flow rates at desired times (refer to FIG. 6 ).
  • a first gas supply system of the current embodiment is constituted mainly by the first gas supply pipe 62 a , the Ar gas supply pipe 72 a , the H 2 gas supply pipe 82 a , the SiCl 4 gas supply pipe 92 a , the Ar gas supply source 75 a , the H 2 gas supply source 85 a , the SiCl 4 gas supply source 95 a , the MFCs 74 a , 84 a , and 94 a , and the valves 73 a , 83 a , and 93 a .
  • a second gas supply system of the current embodiment is constituted mainly by the second gas supply pipe 62 b , the H 2 gas supply source 65 b , the MFC 64 b , and the valve 63 b .
  • a third gas supply system of the current embodiment is constituted mainly by the third gas supply pipe 62 c , the H 2 gas supply pipe 72 c , the C 3 H 8 gas supply pipe 82 c , the Ar gas supply source 75 a , the H 2 gas supply source 75 c , the C 3 H 8 gas supply source 85 c , the MFCs 74 c and 84 c , and the valves 73 c and 83 c .
  • a fourth gas supply system of the current embodiment is constituted mainly by the fourth gas supply pipe 62 d , the Ar gas supply source 65 d , the MFC 64 d , and the valve 63 d .
  • the third gas supply pipe 62 c which constitutes the third gas supply system configured to supply at least a gas containing carbon, is connected to the first gas supply nozzle 60 a which is a first gas supply unit.
  • an exhaust pipe 92 is installed in the manifold 46 at a position facing the first and second gas supply nozzles 60 a and 60 b .
  • the exhaust pipe 92 penetrates the sidewall of the manifold 46 .
  • the downstream end of a first gas exhaust nozzle 90 a and the downstream end of a second gas exhaust nozzle 90 b are connected to the upstream side of the exhaust pipe 92 .
  • a first gas exhaust outlet 98 a is formed in a manner such that the first gas exhaust outlet 98 a is opened toward the lower region of the inner space of the susceptor 48 .
  • a second gas exhaust outlet 98 b is formed in a manner such that the second gas exhaust outlet 98 b is opened toward the lower region of a space between the inner insulating wall 54 and the outer tube 42 .
  • a pressure sensor (not shown) is installed as a pressure detector
  • an auto pressure controller (APC) valve 94 is installed as a pressure regulator
  • a vacuum exhaust device 86 such as a vacuum pump is installed.
  • a pressure control unit 98 (refer to FIG. 6 ) is electrically connected to the pressure sensor and the APC valve 94 . Based on a pressure detected by the pressure sensor, the pressure control unit 98 controls the opening degree of the APC valve 94 so as to keep the inside of the reaction chamber 44 at a desired pressure at a desire time.
  • gases supplied through the first and second gas supply nozzles 60 a and 60 b can flow in parallel with the main surfaces of the wafers 14 , and then the gases can be discharged to the outside of the reaction chamber 44 mainly through the first gas exhaust outlet 98 a . Therefore, the wafers 14 made of a material such as silicon or silicon carbide can be efficiently and uniformly exposed to the gases.
  • Gas supplied through the second gas supply nozzle 60 b is diffused in the reaction chamber 44 and is then discharged to the outside of the reaction chamber 44 mainly through the first gas exhaust outlet 98 a .
  • gas composition ratios in the first gas supply nozzle 60 a and the reaction chamber 44 can be properly adjusted. That is, as described later, the ratio of SiCl 4 gas partial pressure/H 2 gas partial pressure (P SiCl4 /P H2 ) can be adjusted to a proper value independently in the first gas supply nozzle 60 a and the reaction chamber 44 .
  • gas ejected through the fourth gas supply hole 68 d purges the space between the outer tube 42 and the inner insulating wall 54 and is then discharged to the outside of the reaction chamber 44 mainly through the second gas exhaust outlet 98 b .
  • gases supplied through the first and second gas supply nozzles 60 a and 60 b can be prevented from flowing into the space between the outer tube 42 and the inner insulating wall 54 , and adhesion of unnecessary byproducts onto the inner wall of the outer tube 42 can be prevented.
  • FIG. 5 is a schematic view illustrating the process furnace 40 and the peripheral structure of the process furnace 40 according to the current embodiment.
  • a loadlock chamber 110 is installed as a preliminary chamber.
  • a boat elevator 115 is installed at the outer surface of the sidewall of the loadlock chamber 110 .
  • the boat elevator 115 includes a lower base plate 112 , a guide shaft 116 , a ball screw 118 , an upper base plate 120 , an elevating motor 122 , an elevating base plate 130 , and a bellows 128 .
  • the lower base plate 112 is horizontally fixed to the outer surface of the sidewall of the loadlock chamber 110 .
  • the guide shaft 116 fitted in the elevating table 114 , and the ball screw 118 screw-coupled with the elevating table 114 are installed on the lower base plate 112 in perpendicular to the lower base plate 112 .
  • the upper base plate 120 is horizontally fixed to the upper ends of the guide shaft 116 and the ball screw 118 .
  • the ball screw 118 is configured to be rotated by the elevating motor 122 installed on the upper base plate 120 .
  • the guide shaft 116 is configured to allow vertical movements of the elevating table 114 and restrict horizontal rotation of the elevating table 114 . By rotating the ball screw 118 , the elevating table 114 can be raised and lowered.
  • a hollow elevating shaft 124 is vertically fixed to the elevating table 114 .
  • a joint part between the elevating table 114 and the elevating shaft 124 is hermetically kept.
  • the elevating shaft 124 and the elevating table 114 are configured to be lifted and lowered together with each other.
  • the lower end of the elevating shaft 124 penetrates a top plate 126 of the loadlock chamber 110 .
  • the inner diameter of a penetration hole formed in the top plate 126 of the loadlock chamber 110 is greater than the outer diameter of the elevating shaft 124 so as to prevent the elevating shaft 124 and the top plate 126 from making contact with each other.
  • the stretchy bellows 128 is installed so as to enclose the elevating shaft 124 as a hollow stretchy part.
  • a joint part between the elevating table 114 and the bellows 128 and a joint part between the top plate 126 and the bellows 128 are hermetically kept so that the inside of the loadlock chamber 110 can be hermetically maintained.
  • the bellows 128 can be sufficiently expanded and contracted in accordance with ascending and descending motions of the elevating table 114 .
  • the bellows 128 has an inner diameter sufficiently greater than the outer diameter of the elevating shaft 124 so as not to make contact with the elevating shaft 124 .
  • the elevating base plate 130 is horizontally fixed to the lower end of the elevating shaft 124 protruding into the loadlock chamber 110 .
  • a joint part between the elevating shaft 124 and the elevating base plate 130 is hermetically kept.
  • a seal cap 102 is hermetically installed on the top surface of the elevating base plate 130 in a state where a seal member such as an O-ring is disposed between the seal cap 102 and the elevating base plate 130 .
  • the seal cap 102 is made of a metal such as stainless steel and has a circular disk shape.
  • a driving control unit 108 (refer to FIG. 6 ) is electrically connected to the elevating motor 122 .
  • the driving control unit 108 controls the boat elevator 115 so that a desired operation of the boat elevator 115 can be performed at a desired time.
  • a driving unit cover 132 is hermetically attached to the bottom surface of the elevating base plate 130 with a seal member such as an O-ring being disposed therebetween.
  • the elevating base plate 130 and the driving unit cover 132 constitute a driving unit accommodation case 134 .
  • the inside of the driving unit accommodation case 134 is isolated from the inside atmosphere of the loadlock chamber 110 .
  • a rotary mechanism 104 is installed in the driving unit accommodation case 134 .
  • a power supply cable 138 is connected to the rotary mechanism 104 .
  • the power supply cable 138 extends from the upper end of the elevating shaft 124 to the rotary mechanism 104 through the inside of the elevating shaft 124 , so as to supply power to the rotary mechanism 104 .
  • the upper end part of a rotation shaft 106 of the rotary mechanism 104 penetrates the seal cap 102 and supports the bottom side of the boat 30 functioning as a substrate holding tool.
  • the driving control unit 108 (refer to FIG. 6 ) is electrically connected to the rotary mechanism 104 .
  • the driving control unit 108 controls the rotary mechanism 104 so that a desired operation of the rotary mechanism 104 can be performed at a desired time.
  • a cooling mechanism 136 is installed around the rotary mechanism 104 in the driving unit accommodation case 134 .
  • Cooling passages 140 are formed in the cooling mechanism 136 and the seal cap 102 .
  • Coolant conduits 142 are connected to the cooling passages 140 to supply coolant.
  • the coolant conduits 142 extend from the upper end of the elevating shaft 124 to the cooling passages 140 through the inside of the elevating shaft 124 , so as to supply coolant to the cooling passages 140 , respectively.
  • FIG. 6 is a block diagram illustrating a configuration for controlling each part of the substrate processing apparatus 10 .
  • a controller (control unit) 152 includes the temperature control unit 52 , the gas flow rate control unit 78 , the pressure control unit 98 , the driving control unit 108 , and a main control unit 150 .
  • the main control unit 150 constitutes a manipulation unit and an input/output unit and controls the overall operation of the substrate processing apparatus 10 .
  • the temperature control unit 52 , the gas flow rate control unit 78 , the pressure control unit 98 , and the driving control unit 108 are electrically connected to the main control unit 150 .
  • a SiC film is formed by supplying a gas mixture (first gas mixture) of SiCl 4 gas, H 2 gas, and C 3 H 8 gas through the first gas supply nozzle 60 a and supplying H 2 gas through the second gas supply nozzle 60 b .
  • a gas mixture first gas mixture
  • H 2 gas H 2 gas
  • C 3 H 8 gas H 2 gas
  • operations of parts of the substrate processing apparatus 10 are controlled by the controller 152 .
  • a pod 16 accommodating a plurality of wafers 14 is placed on the pod stage 18 .
  • the pod carrying device 20 transfers the pod 16 from the pod stage 18 to the pod shelf 22 .
  • the pod carrying device 20 carries the pod 16 from the pod shelf 22 to the pod opener 24 .
  • the pod opener 24 opens a cap of the pod 16 , and the substrate counter 26 detects the number of the wafers 14 accommodated in the pod 16 .
  • the substrate transfer machine 28 picks up wafers 14 from the pod 16 placed on the pod opener 24 and transfers the wafers 14 to the boat 30 .
  • the boat 30 in which the wafers 14 is held is loaded into the reaction chamber 44 (boat loading) as the elevating table 114 and the elevating shaft 124 are lifted by the elevating motor 122 .
  • the bottom side of the manifold 46 is sealed by the seal cap 102 in a state where the O-ring being disposed between the manifold 46 and the seal cap 102 .
  • the inside of the reaction chamber 44 is vacuum-evacuated by the vacuum exhaust device 86 to a predetermined pressure (vacuum degree). At this time, the inside pressure of the reaction chamber 44 is measured by using the pressure sensor, and based on the measured pressure, the APC valve 94 installed at the exhaust pipe 92 is feedback-controlled (S 2 ).
  • alternating current (AC) power (for example, 10 KHz to 100 KHz, 10 KW to 200 KW) is supplied from an AC power supply (not shown) to the magnetic coil 50 to apply an AC magnetic field to the susceptor 48 and thus to generate an induction current in the susceptor 48 for heating the susceptor 48 .
  • AC alternating current
  • the wafers 14 held in the boat 30 and the inside of the reaction chamber 44 are heated to a temperature ranging from 1500° C. to 1800° C. by radiation heat from the susceptor 48 .
  • power to the magnetic coil 50 is feedback-controlled based on temperature information detected by the temperature sensor (S 3 ).
  • the insides of the first and second gas supply nozzles 60 a and 60 b are also heated to, for example, 1500° C. to 1800° C.
  • the rotary mechanism 104 starts to rotate the boat 30 and the wafers 14 .
  • the wafers 14 are rotated until the wafers 14 are unloaded in a later-described unloading operation.
  • valves 83 a and 93 a are opened, and hydrogen (H 2 ) gas which is a reducing gas and tetrachlorosilane (SiCl 4 ) gas which is a gas containing silicon and chlorine are introduced into the reaction chamber 44 through the first gas supply pipe 62 a , the first gas supply nozzle 60 a , and the first gas supply holes 68 a while controlling the flow rates of the gases by using the MFCs 84 a and 94 a .
  • hydrogen (H 2 ) gas which is a reducing gas
  • SiCl 4 tetrachlorosilane
  • valves 73 c and 83 c are opened, and hydrogen (H 2 ) gas which is a reducing gas and propane (C 3 H 8 ) gas which is a carbon-containing gas are supplied into the reaction chamber 44 through the third gas supply pipe 62 c , the first gas supply nozzle 60 a , and the first gas supply holes 68 a while controlling the flow rates of the gases by using the MFCs 74 c and 84 c.
  • hydrogen (H 2 ) gas which is a reducing gas
  • propane (C 3 H 8 ) gas which is a carbon-containing gas
  • valve 63 b is opened, and H 2 gas which is a reducing gas is supplied into the reaction chamber 44 through the second gas supply pipe 62 b , the second gas supply nozzle 60 b , and the second gas supply holes 68 b while controlling the flow rate of the H 2 gas by using the MFC 64 b.
  • the gases supplied into the reaction chamber 44 through the first and second gas supply nozzles 60 a and 60 b are mixed with each other and flow in parallel with main surfaces of the wafers 14 , and then the gases are discharged to the outside of the reaction chamber 44 mainly through the first gas exhaust outlet 98 a .
  • the gases supplied through the first and second gas supply nozzles 60 a and 60 b flow through the inside of the reaction chamber 44 , the gases make contact with the wafers 14 , and thus SiC films are epitaxially grown on the wafers 14 .
  • the valve 63 d is opened, so as to supply Ar gas to a space between the outer tube 42 and the inner insulating wall 54 through the fourth gas supply pipe 62 d and the fourth gas supply nozzle 60 d while controlling the flow rate of the Ar gas by using the MFC 64 d .
  • the Ar gas supplied through the fourth gas supply nozzle 60 d flows through an inner region of the reaction chamber 44 located outside of the inner insulating wall 54 , and then the Ar gas is discharged to the outside of the reaction chamber 44 mainly through the second gas exhaust outlet 98 b .
  • the gases supplied through the first and second gas supply nozzles 60 a and 60 b can be prevented from flowing into the space between the outer tube 42 and the inner insulating wall 54 , and adhesion of unnecessary byproducts onto parts such as the inner wall of the outer tube 42 can be prevented.
  • valves 83 a , 93 a , 63 b , 73 c , and 83 c are closed to stop supply of SiCl 4 gas, H 2 gas, and C 3 H 8 gas, and along with this, the valve 73 a is opened to start supply of inert gas such as Ar gas into the reaction chamber 44 so as to replace the inside atmosphere of the reaction chamber 44 with the Ar gas and adjust the inside pressure of the reaction chamber 44 to atmospheric pressure (S 6 ).
  • inert gas such as Ar gas
  • the seal cap 102 is lowered by using the elevating motor 122 so as to open the bottom side of the manifold 46 and unload the boat 30 in which the processed wafers 14 are held to the outside of the outer tube 42 through the opened bottom side of the manifold 46 (boat unloading). Then, the boat 30 is left at a predetermined position until all the wafers 14 held in the boat 30 are cooled to a predetermined temperature (for example, about room temperature). If the wafers 14 are cooled to the predetermined temperature, the substrate transfer machine 28 picks up the wafers 14 from the boat 30 and carries the wafers 14 into an empty pod 16 placed on the pod opener 24 . Thereafter, the pod carrying device 20 carries the pod 16 in which the wafers 14 are accommodated to the pod shelf 22 or the pod stage 18 . In this way, the substrate processing process of the current embodiment is completed.
  • a predetermined temperature for example, about room temperature
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 10 Torr to 200 Torr
  • SiC films are epitaxially grown on the wafers 14 .
  • the following exemplary process conditions may be used.
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 1 Torr to 100 Torr
  • SiC films are epitaxially grown on the wafers 14 .
  • the process pressure is set to the above-mentioned pressure.
  • FIG. 7 is an exemplary graph showing a relationship between a growth rate and a gas concentration in a SiCl 4 gas-H 2 gas reaction system.
  • the horizontal axis denotes a Cl/H value of a gas mixture
  • the vertical axis denotes a film growth rate caused by Si deposition.
  • the film growth rate decreases gradually in the negative ( ⁇ ) direction (in the range (c) of FIG. 7 ), that is, a Si film formed by deposition is etched (in the range (c) in FIG. 7 ).
  • This reaction can be expressed by the reaction formula: SiCl 4 +2H 2 ⁇ Si+4HCl.
  • a predetermined value for example, in the ranges (a) and (b) of FIG. 7
  • decomposition of SiCl 4 caused by a hydrogen reduction reaction proceeds at a higher rate so that the chemical equilibrium shifts in a direction where Si deposition and deposition occurs.
  • the Cl/H value is higher than the predetermined value (for example, in the range (c) of FIG.
  • a SiC film can be grown on a wafer 14 while suppressing decomposition of SiCl 4 gas in the first gas supply nozzle 60 a and Si deposition on the inner wall of the first gas supply nozzle 60 a.
  • the concentration or supply flow rate of the H 2 gas is kept small relative to that of the SiCl 4 gas.
  • the Cl/H value of the inside of the first gas supply nozzle 60 a is set to be greater than the Cl/H value of the inside of the reaction chamber 44 , like in the range (c) of FIG. 7 .
  • decomposition of SiCl 4 caused by a hydrogen reduction reaction may be suppressed, and an etching reaction of Si by HCl may occur at a higher rate than the rate of Si deposition, so that deposition of Si on the inner wall of the first gas supply nozzle 60 a can be suppressed.
  • the Cl/H value of the inside of the reaction chamber 44 is set to be smaller than the Cl/H value of the inside of the first gas supply nozzle 60 a , like in the ranges (a) and (b) of FIG. 7 .
  • the Cl/H value of the inside of the reaction chamber 44 is set to a vale where a maximum film growth rate can be obtained.
  • reaction chamber 44 decomposition of SiCl 4 gas caused by a hydrogen reduction reaction may be facilitated, and a Si deposition reaction may occur at a rate higher than the rate of a Si etching reaction, so that a SiC epitaxial film can be efficiently grown on a wafer 14 .
  • the above-described Cl/H value is varied according to SiC epitaxial film growth conditions such as the temperature and the inside pressure of the reaction chamber 44 of epitaxial film growth.
  • a gas not containing hydrogen atoms in its molecules such as SiCl 4 gas
  • thermal decomposition of the gas containing silicon and chlorine can be suppressed, and Si deposition can be suppressed inside the first gas supply nozzle 60 a .
  • a gas such as SiH 4 gas containing hydrogen atoms in its molecules is supplied through the first gas supply nozzle 60 a , since the SiH 4 gas is thermally decomposed at a relatively low temperature (for example, in the range from 950° C.
  • FIG. 8 is an exemplary graph showing calculation results of equilibrium concentrations of a SiCl 4 gas-H 2 gas reaction system
  • FIG. 9 is an exemplary table showing properties of various Si source gases.
  • the first gas supply nozzle 60 a can be prevented from being clogged by deposited Si, and gas can be stably supplied into the reaction chamber 44 .
  • SiCl 4 gas which is a gas containing silicon and chlorine is preliminarily mixed with C 3 H 8 gas which is a carbon-containing gas. Therefore, the SiCl 4 gas and the C 3 H 8 gas can be sufficiently mixed with each other before they reach a wafer 14 , and thus a SiC film having a uniform SiC composition ratio can be formed.
  • a hydrogen reduction reaction of the gas containing silicon and chlorine due to the hydrogen component of the carbon-containing gas it is preferable to additionally supply a chlorine-containing gas (for example, HCl gas or Cl 2 gas) to the insides of the first gas supply pipe 62 a and the first gas supply nozzle 60 a .
  • a chlorine-containing gas for example, HCl gas or Cl 2 gas
  • the downstream side of the first gas supply nozzle 60 a extends upward along the inner wall of the susceptor 48 to a position close to the upper end of the boat 30 . Furthermore, the first gas supply holes 68 a is formed in the lateral wall of the vertical part of the first gas supply nozzle 60 a in a manner such that the first gas supply holes 68 a are vertically arranged, so as to supply gas in a direction parallel with main surfaces of wafers 14 held in the boat 30 .
  • gas can be efficiently and uniformly supplied to the surfaces of the wafers 14 that are arranged at predetermined intervals, and thus the film thickness uniformity can be improved between the wafers 14 and in the surface of each wafer 14 .
  • the current embodiment is different from the above-described embodiment, in that a gas mixture (second gas mixture) of SiCl 4 gas, Ar gas, and C 3 H 8 gas is supplied through the first gas supply nozzle 60 a , and H 2 gas is supplied through the second gas supply nozzle 60 b . That is, instead of supplying H 2 gas into the first gas supply nozzle 60 a as a carrier gas (or reducing gas), Ar gas is supplied as a carrier gas in the current embodiment.
  • a substrate processing apparatus of the current embodiment has the same structure as the structure of the substrate processing apparatus 10 of the first embodiment, and thus a description thereof will not be repeated.
  • a gas supply operation S 4 of the current embodiment the valves 73 a and 93 a are opened, and Argon (Ar) gas which is a carrier gas and tetrachlorosilane (SiCl 4 ) gas which is a gas containing silicon and chlorine are introduced into the reaction chamber 44 through the first gas supply pipe 62 a , the first gas supply nozzle 60 a , and the first gas supply holes 68 a while controlling the flow rates of the gases by using the MFCs 74 a and 94 a .
  • Argon (Ar) gas which is a carrier gas and tetrachlorosilane (SiCl 4 ) gas which is a gas containing silicon and chlorine
  • valve 83 c is opened, and propane (C 3 H 8 ) gas which is a carbon-containing gas is supplied into the reaction chamber 44 through the third gas supply pipe 62 c , the first gas supply nozzle 60 a , and the first gas supply holes 68 a while controlling the flow rate of the propane gas by using the MFC 84 c .
  • the valves 83 a and 73 c are kept in a closed state. That is, in the current embodiment, H 2 gas is not supplied into the first gas supply nozzle 60 a.
  • the valve 63 b is opened, and H 2 gas which is a reducing gas is supplied into the reaction chamber 44 through the second gas supply pipe 62 b , the second gas supply nozzle 60 b , and the second gas supply holes 68 b while controlling the flow rate of the H 2 gas by using the MFC 64 b .
  • H 2 gas which is a reducing gas
  • the second gas supply pipe 62 b By supplying the H 2 gas through the second gas supply pipe 62 b , a hydrogen reduction reaction of the SiCl 4 gas can occur in the reaction chamber 44 , and thus SiC epitaxial films can be efficiently grown on wafers 14 .
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 10 Torr to 200 Torr
  • SiC films are epitaxially grown on the wafers 14 .
  • the following exemplary process conditions may be used.
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 1 Torr to 100 Torr
  • SiC films are epitaxially grown on the wafers 14 .
  • the process pressure is set to the above-mentioned pressure.
  • the Cl/H value of the inside of the first gas supply nozzle 60 a is also kept greater than the Cl/H value of the inside of the reaction chamber 44 , so that the same effects as in the first embodiment can be attained.
  • FIG. 10 is a graph showing calculation results of equilibrium concentrations of reaction species when H 2 gas is used as a carrier gas, and FIG.
  • FIG. 11 is a graph showing calculation results of equilibrium concentrations of reaction species when Ar gas is used as a carrier gas. As it can be understood by comparing the graphs, when Ar gas is used as a carrier gas, decomposition of SiCl 4 gas can be more effectively suppressed even in a high temperature range, for example, from 1500° C. to 1700° C., as compared with the case where H 2 gas is used as a carrier gas.
  • a substrate processing apparatus of the current embodiment is different from the substrate processing apparatuses of the previous embodiments, in that a third gas supply system is not connected to the first gas supply unit but the third gas supply system is connected to a second gas supply unit. That is, the current embodiment is different from the previous embodiments, in that the downstream end of a third gas supply pipe 62 c is not connected to the upstream end of a first gas supply nozzle 60 a but connected to the upstream end of a second gas supply nozzle 60 b .
  • FIG. 13 is an exemplary view illustrating a gas supply system of a substrate processing apparatus 10 of the current embodiment.
  • the other structures of the substrate processing apparatus 10 of the current embodiment are the same as those of the substrate processing apparatus 10 of the first embodiment, and thus detailed descriptions thereof will not be repeated.
  • the current embodiment is different from the previous embodiments, in that a gas mixture (third gas mixture) of SiCl 4 gas and Ar gas is supplied through the first gas supply nozzle 60 a , and a gas mixture (fourth gas mixture) of C 3 H 8 gas and H 2 gas is supplied through the second gas supply nozzle 60 b . That is, the current embodiment is different from the previous embodiments in that C 3 H 8 gas including hydrogen atoms in its molecules is supplied through the second gas supply nozzle 60 b instead of being supplied through the first gas supply nozzle 60 a.
  • a gas supply operation S 4 of the current embodiment the valves 73 a and 93 a are opened, and Argon (Ar) gas which is a carrier gas and tetrachlorosilane (SiCl 4 ) gas which is a gas containing silicon and chlorine are introduced into the reaction chamber 44 through the first gas supply pipe 62 a , the first gas supply nozzle 60 a , and the first gas supply holes 68 a while controlling the flow rates of the gases by using the MFCs 74 a and 94 a.
  • Argon (Ar) gas which is a carrier gas and tetrachlorosilane (SiCl 4 ) gas which is a gas containing silicon and chlorine
  • H 2 gas which is a reducing gas and propane (C 3 H 8 ) gas which is a carbon-containing gas are supplied into the reaction chamber 44 through the second gas supply pipe 62 b , the second gas supply nozzle 60 b , and the second gas supply holes 68 b while controlling the flow rates of the gases by using the MFCs 64 b , 74 c , and 84 c.
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 10 Torr to 200 Torr
  • SiC films are epitaxially grown on wafers 14 .
  • the following exemplary process conditions may be used.
  • Process temperature 1500° C. to 1700° C.
  • Process pressure 1 Torr to 100 Torr
  • SiC films are epitaxially grown on the wafers 14 .
  • the process pressure is set to the above-mentioned pressure.
  • the Cl/H value of the inside of the first gas supply nozzle 60 a is also kept greater than the Cl/H value of the inside of the reaction chamber 44 , and thus the same effects as those of the first and second embodiments can be attained.
  • H 2 gas functioning as a carrier gas is not supplied through the first gas supply nozzle 60 a , and C 3 H 8 gas including hydrogen atoms in its molecules is also not supplied through the first gas supply nozzle 60 a . Therefore, a hydrogen reduction reaction of the SiCl 4 gas caused by the hydrogen of the C 3 H 8 gas can be prevented, and thus decomposition of the SiCl 4 gas and deposition of Si can be effectively suppressed in the first gas supply nozzle 60 a.
  • the valve 73 a is also opened to additionally supply Ar gas from the first gas supply nozzle 60 a into the reaction chamber 44 .
  • the total flow rate of gases supplied from the first gas supply nozzle 60 a into the reaction chamber 44 can be changed without having to vary the Cl/H value of the inside of the first gas supply nozzle 60 a , so that process conditions such as the velocity of gases in the reaction chamber 44 can be freely adjusted.
  • the flow rate of Ar gas may be set, for example, in the range from 10 SLM to 20 SLM.
  • Gases supplied through the first and second gas supply nozzles 60 a and 60 b are not limited to the above-mentioned gases. That is, other proper gases may be used according to purposes.
  • HCl hydrogen chloride
  • the downstream side of the gas supply pipe for HCl gas is connected to the downstream side of the valve 63 b of the second gas supply pipe 62 b .
  • a HCl gas supply source, MFC, and valve are sequentially installed from the upstream side of the gas supply pipe for HCl gas.
  • tetrachlorosilane (SiCl 4 ) gas as a gas containing silicon and chlorine
  • trichlorosilane (SiHCl 3 ) gas or dichlorosilane (SiH 2 Cl 2 ) gas may be used.
  • a gas mixture of a silicon-containing gas and a chlorine-containing gas may be used.
  • a silicon-containing gas a gas such as disilane (Si 2 H 6 ) gas or trisilane (Si 3 H 8 ) gas may be supplied.
  • a gas such as hydrogen chloride (HCl) gas or chlorine (Cl 2 ) gas may be supplied.
  • HCl hydrogen chloride
  • Cl 2 chlorine
  • H 2 gas instead of using H 2 gas as a reducing gas, another hydrogen-containing gas such as ammonia (NH 3 ) gas may be used.
  • NH 3 ammonia
  • C 3 H 8 gas is used as a carbon-containing gas in the above-described embodiments
  • another gas such as ethylene (C 2 H 4 ) gas or propylene (C 3 H 6 ) gas may be used as a carbon-containing gas.
  • argon (Ar) gas which is a rare gas is used as a carrier or purge gas
  • another gas such as helium (He) gas, neon (Ne) gas, krypton (Kr) gas, or xenon (Xe) gas
  • a rare gas having a low atomic weight such as helium (He) gas, neon (Ne) gas, or argon (Ar) may be used, and more preferably, inexpensive argon (Ar) gas may be used.
  • each of the first and second gas supply nozzles 60 a and 60 b is one in number.
  • a plurality of first gas supply nozzles 60 a and a plurality of second gas supply nozzles 60 b may be provided.
  • the second gas supply nozzle 60 b is not limited to the above-described structure.
  • the second gas supply nozzle 60 b may extend only up to a position close to the lower end of the boat 30 .
  • the dispositions of the first and second gas supply nozzles 60 a and 60 b may be changed each other.
  • a dopant gas supply nozzle (not shown) may be installed in the reaction chamber 44 to supply a dopant gas for forming an n-type doped layer.
  • the dopant gas supply nozzle may have the same structure as that of the first gas supply nozzle 60 a or the second gas supply nozzle 60 b .
  • nitrogen (N 2 ) gas may be used as a dopant gas for forming an n-type doped layer
  • a boron-containing gas or an aluminum-containing gas may be used as a dopant gas for forming a p-type doped layer.
  • the first gas supply holes 68 a are provided for wafers 14 held in the boat 30 , respectively, and the second gas supply holes 68 b are provided for the wafers 14 held in the boat 30 , respectively.
  • the present invention is not limited thereto.
  • at least one first gas supply hole 68 a or at least one second gas supply hole 68 b may be provided at least at a lateral side of the wafers 14 held in the boat 30 , for example, in a region between the magnetic coil 50 and the wafers 14 .
  • at least one first gas supply hole 68 a or at least one second gas supply hole 68 b may be provided at least at a lateral side of the wafers 14 held in the boat 30 for every several wafers 14 .
  • the present invention is not limited to the embodiments. That is, the present invention may suitably be applied to other cases where epitaxial films, CVD films, ALD films, or other films are grown by using a silicon-containing gas as a source gas.
  • the substrate processing apparatus when silicon carbide (SiC) epitaxial films are grown in a vertical type substrate processing apparatus in which a plurality of substrates are vertically stacked in a reaction chamber and a gas supply nozzle disposed at the inside of the reaction chamber in a region where the substrates are arranged is heated to a temperature higher than the decomposition temperature of the Si source gas, decomposition of a silicon (Si) source gas in the gas supply nozzle and deposition of Si on a part such as the inner wall of the gas supply nozzle can be suppressed.
  • SiC silicon carbide
  • the present invention also includes the following embodiments.
  • a substrate processing apparatus comprising:
  • reaction chamber configured to process a plurality of substrates stacked at predetermined intervals
  • a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or supply at least a gas containing silicon and chlorine;
  • a first gas supply unit connected to the first gas supply system and comprising a first gas supply outlet for supplying a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber;
  • a second gas supply system configured to supply at least a reducing gas
  • a second gas supply unit connected to the second gas supply system and comprising at least a second gas supply outlet;
  • a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit;
  • control unit configured to control the first gas supply system so that at least the silicon-containing gas and the chlorine-containing gas or at least the gas containing silicon and chlorine is supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, the second gas supply system so that at least the reducing gas is supplied into the reaction chamber from the second gas supply outlet of the second gas supply unit, and the third gas supply system so that at least the carbon-containing gas is supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit, so as to form silicon carbide films on the substrates.
  • a semiconductor device manufacturing method comprising:
  • silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and
  • a substrate manufacturing method comprising:
  • silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and
  • the first gas supply system may be configured to further supply a rare gas
  • control unit may be configured to control the first gas supply system, so that at least the silicon-containing gas, the chlorine-containing gas, and the rare gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, or at least the gas containing silicon and chlorine and the rare gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit.
  • the first gas supply system may be configured to further supply argon gas
  • control unit may be configured to control the first gas supply system, so that at least the silicon-containing gas, the chlorine-containing gas, and the argon gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, or at least the gas containing silicon and chlorine and the argon gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit.
  • the second gas supply unit may be configured so that a gas is supplied through the second gas supply outlet in a direction parallel with the main surfaces of the substrates disposed in the reaction chamber.
  • the second gas supply system may be configured to supply hydrogen gas as the reducing gas
  • the control unit may be configured to control the second gas supply system so that at least the hydrogen gas is supplied into the reaction chamber from the second gas supply outlet of the second gas supply unit.
  • the first gas supply unit may comprise a first gas supply nozzle installed in the reaction chamber and comprising an inner gas flow passage
  • the second gas supply unit may comprise a second gas supply nozzle installed in the reaction chamber and comprising an inner gas flow passage
  • the silicon-containing gas may be silane gas, disilane gas, or trisilane gas,
  • the chlorine-containing gas may be hydrogen chloride gas or chlorine gas
  • the carbon-containing gas may be propane gas, ethylene gas, or propylene gas, and
  • the gas containing silicon and chlorine may be tetrachlorosilane gas, trichlorosilane gas, or dichlorosilane gas.
  • the inside of the reaction chamber may be kept at a temperature of 1500° C. to 1700° C. and a pressure of 10 Torr to 200 Torr during forming the silicon carbide films on the substrates.
  • a substrate manufacturing method comprising:
  • silicon carbide films on the substrates by supplying at least a silicon-containing gas, a carbon-containing gas, and a chlorine-containing gas through a first gas supply outlet provided in a substrate-arrangement region of a gas supply nozzle installed in the reaction chamber, and supplying at least a reducing gas through a second gas supply outlet provided in the reaction chamber at a position different from a position where the gas supply nozzle is installed.
  • a substrate manufacturing method comprising:
  • silicon carbide films on the substrates by supplying at least a silicon-containing gas, a carbon-containing gas, a chlorine-containing gas, and a rare gas through a first gas supply outlet provided in a substrate-arrangement region of a gas supply nozzle installed in the reaction chamber, and supplying at least a reducing gas through a second gas supply outlet provided in the reaction chamber at a position different from a position where the gas supply nozzle is installed.
  • a reducing gas may be further supplied through the first gas supply outlet.
  • the reducing gas may be hydrogen gas or a hydrogen-containing gas, and preferably, the reducing gas may be hydrogen gas.
  • the rare gas may be helium gas, neon gas, argon gas, or krypton gas, and preferably, the rare gas may be argon gas.
  • the substrates may be induction-heated.
  • the gas supply nozzle may extend to a region where the substrates are arranged, and the first gas supply outlet may be provided in the substrate-arrangement region.
  • the amount of the reducing gas supplied through the first gas supply outlet may be smaller than the amount of the reducing gas supplied through the second gas supply outlet.
  • the substrates are heated in the range from 1500° C. to 1700° C.
  • the inside pressure of the reaction chamber is kept in the range from 10 Torr to 200 Torr.
  • a substrate processing apparatus comprising: a reaction chamber configured to process a substrate; a first gas supply system configured to supply at least a silicon-containing gas, a carbon-containing gas, and a chlorine-containing gas into the reaction chamber; a second gas supply system configured to supply at least a reducing gas into the reaction chamber; a first gas supply outlet provided in a substrate-arrangement region of a gas supply nozzle installed in the processing chamber; a second gas supply outlet provided in the reaction chamber at a position different a position where the gas supply nozzle is installed; and a controller configured to control the first gas supply system so that at least the silicon-containing gas, the carbon-containing gas, and the chlorine-containing gas are supplied into the reaction chamber through the first gas supply outlet, and the second gas supply system so that at least the reducing gas is supplied into the reaction chamber through the second gas supply outlet, so as to form a silicon carbide film on the substrate.
  • a substrate processing apparatus comprising: a reaction chamber configured to process a substrate; a first gas supply system configured to supply at least a silicon-containing gas, a carbon-containing gas, a chlorine-containing gas, and a rare gas into the reaction chamber; a second gas supply system configured to supply at least a reducing gas into the reaction chamber; a first gas supply outlet provided in a substrate-arrangement region of a gas supply nozzle installed in the processing chamber; a second gas supply outlet provided in the reaction chamber at a position different a position where the gas supply nozzle is installed; and a controller configured to control the first gas supply system so that at least the silicon-containing gas, the carbon-containing gas, the chlorine-containing gas, and the rare gas are supplied into the reaction chamber through the first gas supply outlet, and the second gas supply system so that at least the reducing gas is supplied into the reaction chamber through the second gas supply outlet, so as to form a silicon carbide film on the substrate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
US12/782,090 2009-05-19 2010-05-18 Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method Abandoned US20100297832A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/732,460 US9177799B2 (en) 2009-05-19 2013-01-02 Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-120882 2009-05-19
JP2009120882 2009-05-19
JP2010086380A JP5564311B2 (ja) 2009-05-19 2010-04-02 半導体装置の製造方法、基板処理装置及び基板の製造方法
JP2010-086380 2010-04-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/732,460 Division US9177799B2 (en) 2009-05-19 2013-01-02 Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate

Publications (1)

Publication Number Publication Date
US20100297832A1 true US20100297832A1 (en) 2010-11-25

Family

ID=43124833

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/782,090 Abandoned US20100297832A1 (en) 2009-05-19 2010-05-18 Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method
US13/732,460 Active 2031-05-19 US9177799B2 (en) 2009-05-19 2013-01-02 Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/732,460 Active 2031-05-19 US9177799B2 (en) 2009-05-19 2013-01-02 Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate

Country Status (2)

Country Link
US (2) US20100297832A1 (enExample)
JP (1) JP5564311B2 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110306212A1 (en) * 2010-06-10 2011-12-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus, semiconductor device manufacturing method and substrate manufacturing method
CN102543689A (zh) * 2010-12-21 2012-07-04 株式会社日立国际电气 衬底处理装置、衬底的制造方法及半导体器件的制造方法
CN102646617A (zh) * 2011-02-18 2012-08-22 株式会社日立国际电气 衬底处理装置和方法以及半导体器件制造方法
US20120220108A1 (en) * 2011-02-28 2012-08-30 Hitachi Kokusai Electric Inc. Substrate processing apparatus, and method of manufacturing substrate
EP2594882A1 (en) * 2011-11-17 2013-05-22 Kern Energy Enterprise Co., Ltd. Vertical Heat Treating Furnace
US20130260328A1 (en) * 2012-03-28 2013-10-03 Tokyo Electron Limited Heat treatment system, heat treatment method, and program
US20130288470A1 (en) * 2012-04-27 2013-10-31 Tokyo Electron Limited Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
US20130330930A1 (en) * 2011-02-24 2013-12-12 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
US20140057456A1 (en) * 2012-02-17 2014-02-27 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
US9177799B2 (en) 2009-05-19 2015-11-03 Hitachi Kokusai Electric, Inc. Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
US10453735B2 (en) * 2017-09-26 2019-10-22 Kokusai Electric Corporation Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium
US20200149159A1 (en) * 2017-09-25 2020-05-14 Kokusai Electric Corporation Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device
US20210317574A1 (en) * 2020-04-14 2021-10-14 Wonik Ips Co., Ltd. Substrate processing apparatus

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5732284B2 (ja) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP5901978B2 (ja) * 2011-04-11 2016-04-13 株式会社日立国際電気 基板処理装置、基板処理装置制御プログラム、及び半導体装置の製造方法
JP6019938B2 (ja) * 2012-08-30 2016-11-02 富士電機株式会社 炭化珪素半導体装置の製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
TW202303989A (zh) * 2021-06-11 2023-01-16 南韓商周星工程股份有限公司 製造功率半導體元件的方法

Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US4940642A (en) * 1986-03-05 1990-07-10 Canon Kabushiki Kaisha Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
US5534392A (en) * 1986-02-07 1996-07-09 Canon Kabushiki Kaisha Process for electrophotographic imaging with layered light receiving member containing A-Si and Ge
US20060021570A1 (en) * 2004-08-02 2006-02-02 Kazuhide Hasebe Reduction in size of hemispherical grains of hemispherical grained film
US20060032442A1 (en) * 2004-07-15 2006-02-16 Kazuhide Hasebe Method and apparatus for forming silicon oxide film
US20060199357A1 (en) * 2005-03-07 2006-09-07 Wan Yuet M High stress nitride film and method for formation thereof
US20080124945A1 (en) * 2005-02-17 2008-05-29 Hitachi Kokusa Electric Inc. Production Method for Semiconductor Device and Substrate Processing Apparatus
US20080132084A1 (en) * 2006-11-10 2008-06-05 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device background
US20080242064A1 (en) * 2007-04-02 2008-10-02 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device
US20090145890A1 (en) * 2007-12-07 2009-06-11 Tokyo Electron Limited Treatment apparatus, treatment method, and storage medium
US20090159440A1 (en) * 2002-01-10 2009-06-25 Hitachi Kokusai Electric Inc. Batch-Type Remote Plasma Processing Apparatus
US20090170345A1 (en) * 2007-12-26 2009-07-02 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device and substrate processing apparatus
US20090253265A1 (en) * 2007-05-27 2009-10-08 Hitachi Kokusai Electric, Inc. Method for fabricating semiconductor device and substrate processing apparatus
US20090305517A1 (en) * 2006-03-27 2009-12-10 Hitachi Kokusai Electric Inc. Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus
US20100105192A1 (en) * 2008-10-29 2010-04-29 Naonori Akae Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus
US20100130024A1 (en) * 2008-11-26 2010-05-27 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US20100151682A1 (en) * 2008-12-15 2010-06-17 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US20100154711A1 (en) * 2008-12-24 2010-06-24 Hitachi-Kokusai Electric Inc. Substrate processing apparatus
US20100218724A1 (en) * 2009-02-27 2010-09-02 Hitachi-Kokusai Electric Inc. Substrate processing apparatus
US20100275848A1 (en) * 2009-05-01 2010-11-04 Hitachi-Kokusai Electric Inc. Heat treatment apparatus
US20100282166A1 (en) * 2009-05-11 2010-11-11 Hitachi-Kokusai Electric Inc. Heat treatment apparatus and method of heat treatment
US20110210117A1 (en) * 2008-09-04 2011-09-01 Tokyo Electron Limited Heat treatment apparatus
US20130122692A1 (en) * 2009-05-19 2013-05-16 Hitachi Kokusai Electric, Inc. Semiconductor Device Manufacturing Method and Substrate Manufacturing Method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2550024B2 (ja) 1986-03-17 1996-10-30 富士通株式会社 減圧ｃｖｄ装置
JPH02262324A (ja) * 1989-03-31 1990-10-25 Hoya Corp Ｘ線透過膜およびその製造方法
JP2556621B2 (ja) * 1990-12-11 1996-11-20 ホーヤ株式会社 炭化ケイ素膜の成膜方法
JPH07118854A (ja) 1993-10-22 1995-05-09 Hoya Corp 炭化ケイ素膜の形成方法
JP2000297375A (ja) * 1999-04-09 2000-10-24 Hoya Corp 炭化珪素膜の製造方法及び製造装置、並びにｘ線マスクの製造方法
JP2006321696A (ja) 2005-05-20 2006-11-30 Hitachi Cable Ltd 炭化珪素単結晶の製造方法
WO2007013464A1 (ja) * 2005-07-29 2007-02-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法
JP4677873B2 (ja) * 2005-10-05 2011-04-27 株式会社デンソー 成膜装置
KR20080089403A (ko) * 2005-12-22 2008-10-06 에이에스엠 아메리카, 인코포레이티드 도핑된 반도체 물질들의 에피택시 증착
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法

Patent Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US5534392A (en) * 1986-02-07 1996-07-09 Canon Kabushiki Kaisha Process for electrophotographic imaging with layered light receiving member containing A-Si and Ge
US4940642A (en) * 1986-03-05 1990-07-10 Canon Kabushiki Kaisha Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
US20090159440A1 (en) * 2002-01-10 2009-06-25 Hitachi Kokusai Electric Inc. Batch-Type Remote Plasma Processing Apparatus
US7651730B2 (en) * 2004-07-15 2010-01-26 Tokyo Electron Limited Method and apparatus for forming silicon oxide film
US20060032442A1 (en) * 2004-07-15 2006-02-16 Kazuhide Hasebe Method and apparatus for forming silicon oxide film
US20060021570A1 (en) * 2004-08-02 2006-02-02 Kazuhide Hasebe Reduction in size of hemispherical grains of hemispherical grained film
US20080124945A1 (en) * 2005-02-17 2008-05-29 Hitachi Kokusa Electric Inc. Production Method for Semiconductor Device and Substrate Processing Apparatus
US20090280652A1 (en) * 2005-02-17 2009-11-12 Hironobu Miya Production method for semiconductor device and substrate processing apparatus
US20060199357A1 (en) * 2005-03-07 2006-09-07 Wan Yuet M High stress nitride film and method for formation thereof
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20090305517A1 (en) * 2006-03-27 2009-12-10 Hitachi Kokusai Electric Inc. Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus
US20080132084A1 (en) * 2006-11-10 2008-06-05 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device background
US20080242064A1 (en) * 2007-04-02 2008-10-02 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device
US20090253265A1 (en) * 2007-05-27 2009-10-08 Hitachi Kokusai Electric, Inc. Method for fabricating semiconductor device and substrate processing apparatus
US20090145890A1 (en) * 2007-12-07 2009-06-11 Tokyo Electron Limited Treatment apparatus, treatment method, and storage medium
US8354623B2 (en) * 2007-12-07 2013-01-15 Tokyo Electron Limited Treatment apparatus, treatment method, and storage medium
US20090170345A1 (en) * 2007-12-26 2009-07-02 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device and substrate processing apparatus
US20110210117A1 (en) * 2008-09-04 2011-09-01 Tokyo Electron Limited Heat treatment apparatus
US20100105192A1 (en) * 2008-10-29 2010-04-29 Naonori Akae Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus
US20100130024A1 (en) * 2008-11-26 2010-05-27 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US20100151682A1 (en) * 2008-12-15 2010-06-17 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US20100154711A1 (en) * 2008-12-24 2010-06-24 Hitachi-Kokusai Electric Inc. Substrate processing apparatus
US20100218724A1 (en) * 2009-02-27 2010-09-02 Hitachi-Kokusai Electric Inc. Substrate processing apparatus
US20100275848A1 (en) * 2009-05-01 2010-11-04 Hitachi-Kokusai Electric Inc. Heat treatment apparatus
US20100282166A1 (en) * 2009-05-11 2010-11-11 Hitachi-Kokusai Electric Inc. Heat treatment apparatus and method of heat treatment
US20130122692A1 (en) * 2009-05-19 2013-05-16 Hitachi Kokusai Electric, Inc. Semiconductor Device Manufacturing Method and Substrate Manufacturing Method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177799B2 (en) 2009-05-19 2015-11-03 Hitachi Kokusai Electric, Inc. Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
US20110306212A1 (en) * 2010-06-10 2011-12-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus, semiconductor device manufacturing method and substrate manufacturing method
CN102543689A (zh) * 2010-12-21 2012-07-04 株式会社日立国际电气 衬底处理装置、衬底的制造方法及半导体器件的制造方法
CN102646617A (zh) * 2011-02-18 2012-08-22 株式会社日立国际电气 衬底处理装置和方法以及半导体器件制造方法
US9082694B2 (en) * 2011-02-24 2015-07-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
US20130330930A1 (en) * 2011-02-24 2013-12-12 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
US20120220108A1 (en) * 2011-02-28 2012-08-30 Hitachi Kokusai Electric Inc. Substrate processing apparatus, and method of manufacturing substrate
US9028614B2 (en) * 2011-02-28 2015-05-12 Hitachi Kokusai Electric Inc. Substrate processing apparatus
EP2594882A1 (en) * 2011-11-17 2013-05-22 Kern Energy Enterprise Co., Ltd. Vertical Heat Treating Furnace
CN103122448A (zh) * 2011-11-17 2013-05-29 核心能源实业有限公司 垂直式热处理炉结构
US20140057456A1 (en) * 2012-02-17 2014-02-27 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
US9147573B2 (en) * 2012-02-17 2015-09-29 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US9453683B2 (en) * 2012-03-28 2016-09-27 Tokyo Electron Limited Heat treatment system, heat treatment method, and program
US20130260328A1 (en) * 2012-03-28 2013-10-03 Tokyo Electron Limited Heat treatment system, heat treatment method, and program
US8906792B2 (en) * 2012-04-27 2014-12-09 Tokyo Electron Limited Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
US20130288470A1 (en) * 2012-04-27 2013-10-31 Tokyo Electron Limited Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
US20200149159A1 (en) * 2017-09-25 2020-05-14 Kokusai Electric Corporation Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device
US11685992B2 (en) * 2017-09-25 2023-06-27 Kokusai Electric Corporation Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device
US10453735B2 (en) * 2017-09-26 2019-10-22 Kokusai Electric Corporation Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium
US20210317574A1 (en) * 2020-04-14 2021-10-14 Wonik Ips Co., Ltd. Substrate processing apparatus
US20210317575A1 (en) * 2020-04-14 2021-10-14 Wonik Ips Co., Ltd. Substrate processing apparatus

Also Published As

Publication number Publication date
JP2011003885A (ja) 2011-01-06
JP5564311B2 (ja) 2014-07-30
US9177799B2 (en) 2015-11-03
US20130122692A1 (en) 2013-05-16

Similar Documents

Publication Publication Date Title
US9177799B2 (en) Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
US8409352B2 (en) Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
US8889533B2 (en) Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
JP5393895B2 (ja) 半導体装置の製造方法及び基板処理装置
US8071477B2 (en) Method of manufacturing semiconductor device and substrate processing apparatus
US10480095B2 (en) System for rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US20110306212A1 (en) Substrate processing apparatus, semiconductor device manufacturing method and substrate manufacturing method
US20040255868A1 (en) Plasma etch resistant coating and process
US8450220B2 (en) Substrate processing apparatus , method of manufacturing semiconductor device, and method of manufacturing substrate
US20120156886A1 (en) Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device
US20120220107A1 (en) Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device
US20100275848A1 (en) Heat treatment apparatus
US20100282166A1 (en) Heat treatment apparatus and method of heat treatment
JP2011205059A (ja) 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP2012178492A (ja) 基板処理装置およびガスノズルならびに基板若しくは半導体デバイスの製造方法
JP2010171101A (ja) 半導体装置の製造方法及び基板処理装置
US8771416B2 (en) Substrate processing apparatus with an insulator disposed in the reaction chamber
US20220301851A1 (en) Method of manufacturing semiconductor device, substrate processing method, recording medium, and substrate processing apparatus
JP2013197507A (ja) 基板処理装置および基板処理方法ならびに半導体装置の製造方法
JP2013207057A (ja) 基板処理装置、基板の製造方法、及び、基板処理装置のクリーニング方法
JP2012186275A (ja) 基板処理装置及び半導体装置の製造方法
JP2012175072A (ja) 基板処理装置
JP2014123616A (ja) 基板処理装置
US20120052657A1 (en) Method of forming film and substrate processing apparatus
JP2014179550A (ja) 基板処理装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI KOKUSAI ELECTRIC, INC., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:IMAI, YOSHINORI;SHIBATA, HIDEJI;SASAKI, TAKAFUMI;SIGNING DATES FROM 20100524 TO 20100528;REEL/FRAME:024815/0280

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION