JP5552276B2 - Ｓｏｉ基板の作製方法 - Google Patents

Ｓｏｉ基板の作製方法 Download PDF

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Publication number
JP5552276B2
JP5552276B2 JP2009177815A JP2009177815A JP5552276B2 JP 5552276 B2 JP5552276 B2 JP 5552276B2 JP 2009177815 A JP2009177815 A JP 2009177815A JP 2009177815 A JP2009177815 A JP 2009177815A JP 5552276 B2 JP5552276 B2 JP 5552276B2
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor layer
substrate
chamber
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Expired - Fee Related
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JP2009177815A
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English (en)
Japanese (ja)
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JP2010056543A (ja
JP2010056543A5 (enExample
Inventor
明久 下村
英人 大沼
純平 桃
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009177815A priority Critical patent/JP5552276B2/ja
Publication of JP2010056543A publication Critical patent/JP2010056543A/ja
Publication of JP2010056543A5 publication Critical patent/JP2010056543A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H10P90/1916—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H10P14/3411—
    • H10P14/3808—
    • H10P90/1914—
    • H10W10/181—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2009177815A 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5552276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009177815A JP5552276B2 (ja) 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008200001 2008-08-01
JP2008200016 2008-08-01
JP2008200001 2008-08-01
JP2008200016 2008-08-01
JP2009177815A JP5552276B2 (ja) 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010056543A JP2010056543A (ja) 2010-03-11
JP2010056543A5 JP2010056543A5 (enExample) 2012-06-14
JP5552276B2 true JP5552276B2 (ja) 2014-07-16

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US (2) US7943414B2 (enExample)
JP (1) JP5552276B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007030106A1 (de) * 2007-06-28 2009-01-02 Intega Gmbh Verfahren und Vorrichtung zum Behandeln eines Halbleitersubstrats
SG161151A1 (en) * 2008-10-22 2010-05-27 Semiconductor Energy Lab Soi substrate and method for manufacturing the same
SG162675A1 (en) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
JP5610471B2 (ja) * 2010-04-27 2014-10-22 株式会社日本製鋼所 結晶材料改質装置および結晶材料の改質方法
US20120043198A1 (en) * 2010-08-18 2012-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US9252042B2 (en) 2011-01-25 2016-02-02 Ev Group E. Thallner Gmbh Method for permanent bonding of wafers
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
WO2012136268A1 (de) * 2011-04-08 2012-10-11 Ev Group E. Thallner Gmbh Verfahren zum permanenten bonden von wafern
CN103477420B (zh) * 2011-04-08 2016-11-16 Ev集团E·索尔纳有限责任公司 永久性粘合晶片的方法
CN103460343B (zh) * 2011-04-08 2016-04-13 Ev集团E·索尔纳有限责任公司 晶片的永久粘合方法
DE102011002236A1 (de) * 2011-04-21 2012-10-25 Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg Verfahren zur Herstellung einer polykristallinen Schicht
US20130023108A1 (en) * 2011-07-22 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
US8669166B1 (en) * 2012-08-15 2014-03-11 Globalfoundries Inc. Methods of thinning and/or dicing semiconducting substrates having integrated circuit products formed thereon
US9728453B2 (en) * 2013-03-15 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for hybrid wafer bonding integrated with CMOS processing
WO2016031019A1 (ja) * 2014-08-28 2016-03-03 国立大学法人九州大学 レーザ照射装置及びレーザ照射方法
DE102015007216B4 (de) * 2015-06-03 2023-07-20 Asml Netherlands B.V. Verfahren zur Herstellung einer Halteplatte, insbesondere für einen Clamp zur Waferhalterung, Verfahren zur Herstellung einer Haltevorrichtung zur Halterung eines Bauteils, Halteplatte und Haltevorrichtung
US11255606B2 (en) * 2015-12-30 2022-02-22 Mattson Technology, Inc. Gas flow control for millisecond anneal system
US20170241012A1 (en) * 2016-02-24 2017-08-24 Guardian Industries Corp. Coated article including metal island layer(s) formed using temperature control, and/or method of making the same
US10475930B2 (en) 2016-08-17 2019-11-12 Samsung Electronics Co., Ltd. Method of forming crystalline oxides on III-V materials
US10830933B2 (en) 2018-06-12 2020-11-10 Guardian Glass, LLC Matrix-embedded metamaterial coating, coated article having matrix-embedded metamaterial coating, and/or method of making the same
US10562812B2 (en) 2018-06-12 2020-02-18 Guardian Glass, LLC Coated article having metamaterial-inclusive layer, coating having metamaterial-inclusive layer, and/or method of making the same
CN118983257A (zh) * 2018-07-19 2024-11-19 东京毅力科创株式会社 基板处理装置和基板处理方法
KR20210080432A (ko) 2018-10-26 2021-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물의 제작 방법, 반도체 장치의 제작 방법
JP7262210B2 (ja) * 2018-11-21 2023-04-21 東京エレクトロン株式会社 凹部の埋め込み方法
GB2582948B (en) 2019-04-10 2021-12-08 Thermo Fisher Scient Bremen Gmbh Plasma source chamber for a spectrometer
JP7377021B2 (ja) * 2019-08-20 2023-11-09 浜松ホトニクス株式会社 熱処理装置、熱処理システム及び熱処理品の製造方法
FR3101726B1 (fr) * 2019-10-04 2021-10-01 Commissariat Energie Atomique procédé de fabrication d’un dispositif électronique
US20240118491A1 (en) * 2022-10-05 2024-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic semiconductor device, photonic semiconductor package using the same and manufacturing method thereof

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
JPH05299339A (ja) * 1991-03-18 1993-11-12 Semiconductor Energy Lab Co Ltd 半導体材料およびその作製方法
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5171710A (en) * 1985-08-02 1992-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for photo annealing non-single crystalline semiconductor films
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
FR2639567B1 (fr) * 1988-11-25 1991-01-25 France Etat Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW371776B (en) * 1995-10-15 1999-10-11 Semiconductor Energy Lab Co Ltd Laser irradiation apparatus and method
JP3957777B2 (ja) * 1995-10-15 2007-08-15 株式会社半導体エネルギー研究所 レーザー照射方法
US6444506B1 (en) 1995-10-25 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
US6027960A (en) * 1995-10-25 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
JP3927634B2 (ja) * 1995-10-25 2007-06-13 株式会社半導体エネルギー研究所 レーザーアニール方法及び薄膜トランジスタの作製方法
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JP3349931B2 (ja) 1997-10-30 2002-11-25 松下電器産業株式会社 半導体レーザ装置の製造方法
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2000082679A (ja) * 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
US7153729B1 (en) 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4228419B2 (ja) * 1998-07-29 2009-02-25 信越半導体株式会社 Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3794876B2 (ja) 1998-09-09 2006-07-12 松下電器産業株式会社 半導体装置の製造方法
JP4101409B2 (ja) 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
JP2002231628A (ja) * 2001-02-01 2002-08-16 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
TW544938B (en) 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
DE10318284A1 (de) * 2003-04-22 2004-11-25 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP5019739B2 (ja) * 2004-11-29 2012-09-05 株式会社半導体エネルギー研究所 レーザ処理装置
US7393764B2 (en) * 2004-11-29 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device
US20070117287A1 (en) 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7579654B2 (en) 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
EP1993128A3 (en) * 2007-05-17 2010-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
US7960262B2 (en) 2007-05-18 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device by applying laser beam to single-crystal semiconductor layer and non-single-crystal semiconductor layer through cap film
US7745268B2 (en) 2007-06-01 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere
US7776718B2 (en) 2007-06-25 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers
US7795111B2 (en) 2007-06-27 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
JP5442224B2 (ja) 2007-07-23 2014-03-12 株式会社半導体エネルギー研究所 Ｓｏｉ基板の製造方法
KR101499175B1 (ko) 2007-10-04 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제조방법
US7799658B2 (en) 2007-10-10 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
CN101842910B (zh) 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
US7851318B2 (en) 2007-11-01 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5286046B2 (ja) 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US7947523B2 (en) * 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device

Also Published As

Publication number Publication date
US20110212596A1 (en) 2011-09-01
JP2010056543A (ja) 2010-03-11
US9076839B2 (en) 2015-07-07
US7943414B2 (en) 2011-05-17
US20100029058A1 (en) 2010-02-04

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