JP5511541B2 - 固体撮像装置及び固体撮像装置の駆動方法 - Google Patents

固体撮像装置及び固体撮像装置の駆動方法 Download PDF

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Publication number
JP5511541B2
JP5511541B2 JP2010144221A JP2010144221A JP5511541B2 JP 5511541 B2 JP5511541 B2 JP 5511541B2 JP 2010144221 A JP2010144221 A JP 2010144221A JP 2010144221 A JP2010144221 A JP 2010144221A JP 5511541 B2 JP5511541 B2 JP 5511541B2
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voltage
transistor
floating diffusion
signal
outputs
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Japanese (ja)
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JP2012010106A5 (enExample
JP2012010106A (ja
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雅章 箕輪
彰 沖田
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Canon Inc
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Canon Inc
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Priority to JP2010144221A priority Critical patent/JP5511541B2/ja
Priority to EP11168148.2A priority patent/EP2400550B1/en
Priority to US13/158,266 priority patent/US8817151B2/en
Priority to KR1020110058434A priority patent/KR101418347B1/ko
Priority to CN201110166961.6A priority patent/CN102300053B/zh
Publication of JP2012010106A publication Critical patent/JP2012010106A/ja
Publication of JP2012010106A5 publication Critical patent/JP2012010106A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010144221A 2010-06-24 2010-06-24 固体撮像装置及び固体撮像装置の駆動方法 Active JP5511541B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010144221A JP5511541B2 (ja) 2010-06-24 2010-06-24 固体撮像装置及び固体撮像装置の駆動方法
EP11168148.2A EP2400550B1 (en) 2010-06-24 2011-05-31 Drive method for solid-state imaging device
US13/158,266 US8817151B2 (en) 2010-06-24 2011-06-10 Solid-state imaging device and method for solid-state imaging device for transferring charge from a photoelectric conversion portion to a floating diffusion
KR1020110058434A KR101418347B1 (ko) 2010-06-24 2011-06-16 고체 촬상 장치 및 고체 촬상 장치의 구동 방법
CN201110166961.6A CN102300053B (zh) 2010-06-24 2011-06-21 固态成像装置和用于固态成像装置的驱动方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010144221A JP5511541B2 (ja) 2010-06-24 2010-06-24 固体撮像装置及び固体撮像装置の駆動方法

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JP2012010106A JP2012010106A (ja) 2012-01-12
JP2012010106A5 JP2012010106A5 (enExample) 2013-07-18
JP5511541B2 true JP5511541B2 (ja) 2014-06-04

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US (1) US8817151B2 (enExample)
EP (1) EP2400550B1 (enExample)
JP (1) JP5511541B2 (enExample)
KR (1) KR101418347B1 (enExample)
CN (1) CN102300053B (enExample)

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JP2016178408A (ja) * 2015-03-19 2016-10-06 キヤノン株式会社 固体撮像装置及びその駆動方法、並びに撮像システム
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WO2017010260A1 (ja) * 2015-07-10 2017-01-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および駆動方法、並びに電子機器
JP2018121142A (ja) * 2017-01-24 2018-08-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその駆動方法、並びに電子機器
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Also Published As

Publication number Publication date
US20110316839A1 (en) 2011-12-29
EP2400550B1 (en) 2016-03-09
KR20110140082A (ko) 2011-12-30
EP2400550A1 (en) 2011-12-28
KR101418347B1 (ko) 2014-07-10
US8817151B2 (en) 2014-08-26
CN102300053B (zh) 2015-09-23
JP2012010106A (ja) 2012-01-12
CN102300053A (zh) 2011-12-28

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