JP5510479B2 - Ntcサーミスタ用半導体磁器組成物 - Google Patents
Ntcサーミスタ用半導体磁器組成物 Download PDFInfo
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- JP5510479B2 JP5510479B2 JP2012047445A JP2012047445A JP5510479B2 JP 5510479 B2 JP5510479 B2 JP 5510479B2 JP 2012047445 A JP2012047445 A JP 2012047445A JP 2012047445 A JP2012047445 A JP 2012047445A JP 5510479 B2 JP5510479 B2 JP 5510479B2
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- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
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- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
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- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B2235/3263—Mn3O4
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
- C04B2235/3277—Co3O4
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- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
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- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
まず、セラミック素原料として、Mn3O4、Co3O4、Fe2O3、Al2O3およびTiO2の各粉末を、表1に示すような組成となるように秤量した。表1において、「Mn3O4」、「Co3O4」および「Fe2O3」の各欄には、主成分としてのMn3O4とCo3O4とFe2O3との間での含有率が「重量%」を単位として示され、「Al2O3」および「TiO2」の各欄には、Mn3O4とCo3O4とFe2O3との合計量100重量部に対するAl2O3およびTiO2の各々の重量比率が「重量部」を単位として示されている。
ただし、a×bは、NTCサーミスタ試料の平面寸法、cは、NTCサーミスタ試料の厚さ寸法である。
さらに、得られた単板型のNTCサーミスタの試料に対して、450℃で8時間のアニールのための熱処理を実施した。その後、再度、25℃での抵抗値を測定し、熱処理による抵抗変化率を以下の式から算出した。
ただし、R25-0は、アニール前の25℃での抵抗値、R25-1は、アニール後の25℃での抵抗値である。
2,22 部品本体
4,5 内部電極
23,24 電極
Claims (1)
- 主成分として、少なくともマンガンおよびコバルトを含む、NTCサーミスタ用半導体磁器組成物であって、
添加成分として、アルミニウムおよびチタンの双方をさらに含み、
前記チタンの含有量が、前記主成分の含有量を100重量部としたとき、TiO 2 に換算して9.2重量部以下である、
NTCサーミスタ用半導体磁器組成物。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012047445A JP5510479B2 (ja) | 2012-03-03 | 2012-03-03 | Ntcサーミスタ用半導体磁器組成物 |
US13/693,077 US8669841B2 (en) | 2012-03-03 | 2012-12-04 | Semiconductor ceramic composition for NTC thermistors |
TW101145730A TWI441204B (zh) | 2012-03-03 | 2012-12-05 | Ntc熱阻器用半導體陶瓷組合物 |
CN201310032660.3A CN103295709B (zh) | 2012-03-03 | 2013-01-28 | Ntc热敏电阻用半导体陶瓷组合物 |
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JP2012047445A JP5510479B2 (ja) | 2012-03-03 | 2012-03-03 | Ntcサーミスタ用半導体磁器組成物 |
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JP2013183109A JP2013183109A (ja) | 2013-09-12 |
JP5510479B2 true JP5510479B2 (ja) | 2014-06-04 |
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US (1) | US8669841B2 (ja) |
JP (1) | JP5510479B2 (ja) |
CN (1) | CN103295709B (ja) |
TW (1) | TWI441204B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013179774A1 (ja) * | 2012-05-28 | 2013-12-05 | 株式会社村田製作所 | Ntcサーミスタ素子およびその製造方法 |
WO2014199752A1 (ja) * | 2013-06-13 | 2014-12-18 | 株式会社 村田製作所 | セラミック電子部品およびその製造方法 |
WO2016139975A1 (ja) * | 2015-03-04 | 2016-09-09 | 株式会社村田製作所 | 基板埋め込み用ntcサーミスタおよびその製造方法 |
WO2017038189A1 (ja) * | 2015-09-03 | 2017-03-09 | 株式会社村田製作所 | Ntcサーミスタの製造方法 |
WO2019087777A1 (ja) * | 2017-11-02 | 2019-05-09 | 株式会社村田製作所 | サーミスタ素子およびその製造方法 |
CN114464927B (zh) * | 2021-12-31 | 2024-04-02 | 北京卫蓝新能源科技有限公司 | 一种基于ntc材料的自适应电加热电芯、电池系统及ntc材料 |
CN114455939B (zh) * | 2022-01-07 | 2022-11-01 | 广东风华高新科技股份有限公司 | 一种高阻值高b值的ntc热敏电阻材料及其制备方法 |
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JPS5632701A (en) * | 1979-08-24 | 1981-04-02 | Mitsui Mining & Smelting Co | Thermistor composition |
JPS63315562A (ja) * | 1987-06-18 | 1988-12-23 | Matsushita Electric Ind Co Ltd | サーミスタ磁器組成物 |
JPH06251906A (ja) * | 1993-02-26 | 1994-09-09 | Taiyo Yuden Co Ltd | サーミスタ用組成物 |
JPH08236308A (ja) | 1995-02-22 | 1996-09-13 | Murata Mfg Co Ltd | セラミック電子部品とその特性値調整方法 |
JP3430023B2 (ja) * | 1998-08-19 | 2003-07-28 | ティーディーケイ株式会社 | サーミスタ用組成物 |
ATE434823T1 (de) * | 2000-04-25 | 2009-07-15 | Epcos Ag | Elektrisches bauelement, verfahren zu dessen herstellung und dessen verwendung |
JP4726890B2 (ja) * | 2005-02-08 | 2011-07-20 | 株式会社村田製作所 | 表面実装型負特性サーミスタ |
JP2006269654A (ja) * | 2005-03-23 | 2006-10-05 | Tdk Corp | 積層型ntcサーミスタ |
WO2008041481A1 (fr) * | 2006-09-29 | 2008-04-10 | Murata Manufacturing Co., Ltd. | Porcelaine de thermistance ntc et thermistance ntc l'utilisant |
TWM341297U (en) | 2008-04-14 | 2008-09-21 | Tayao Technology Co Ltd | Thermistor chip |
WO2010044438A1 (ja) * | 2008-10-15 | 2010-04-22 | 株式会社村田製作所 | 熱センサ、非接触温度計装置、及び非接触温度測定方法 |
JP5141775B2 (ja) * | 2008-12-02 | 2013-02-13 | 株式会社村田製作所 | ガスセンサ |
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- 2012-03-03 JP JP2012047445A patent/JP5510479B2/ja active Active
- 2012-12-04 US US13/693,077 patent/US8669841B2/en active Active
- 2012-12-05 TW TW101145730A patent/TWI441204B/zh active
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2013
- 2013-01-28 CN CN201310032660.3A patent/CN103295709B/zh active Active
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Publication number | Publication date |
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US8669841B2 (en) | 2014-03-11 |
TWI441204B (zh) | 2014-06-11 |
TW201337970A (zh) | 2013-09-16 |
JP2013183109A (ja) | 2013-09-12 |
CN103295709B (zh) | 2016-06-22 |
US20130229256A1 (en) | 2013-09-05 |
CN103295709A (zh) | 2013-09-11 |
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