JP2013180908A - 誘電体磁器組成物および電子部品 - Google Patents
誘電体磁器組成物および電子部品 Download PDFInfo
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- JP2013180908A JP2013180908A JP2012044017A JP2012044017A JP2013180908A JP 2013180908 A JP2013180908 A JP 2013180908A JP 2012044017 A JP2012044017 A JP 2012044017A JP 2012044017 A JP2012044017 A JP 2012044017A JP 2013180908 A JP2013180908 A JP 2013180908A
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- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
- C04B2235/9615—Linear firing shrinkage
Abstract
【解決手段】一般式{A1−x(RE)2x/3}y−D2O5+yで表され、タングステンブロンズ構造を有する化合物と、Mの酸化物と、を有する誘電体磁器組成物である。Aは、Ba、Ca、SrおよびMgから選ばれる少なくとも1つ、Dは、Nbおよび/またはTa、REは、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、YbおよびLuから選ばれる少なくとも1つであり、xおよびyが、0<x<1、y>0の関係を満足し、Mは、Al、Si、BおよびLiから選ばれる少なくとも1つである。Mgの酸化物をさらに有することが好ましい。
【選択図】なし
Description
一般式{A1−x(RE)2x/3}y−D2O5+yで表され、タングステンブロンズ構造を有する化合物と、Mの酸化物と、を有し、
前記Aは、Ba、Ca、SrおよびMgからなる群から選ばれる少なくとも1つ、前記Dは、NbおよびTaからなる群から選ばれる少なくとも1つ、前記REは、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、YbおよびLuからなる群から選ばれる少なくとも1つであり、
前記xおよびyが、0<x<1、y>0の関係を満足し、
前記Mは、Al、Si、BおよびLiからなる群から選ばれる少なくとも1つである。
図1に示すように、積層セラミックコンデンサ1は、誘電体層2と内部電極層3とが交互に積層された構成のコンデンサ素子本体10を有する。このコンデンサ素子本体10の両端部には、素子本体10の内部で交互に配置された内部電極層3と各々導通する一対の外部電極4が形成してある。コンデンサ素子本体10の形状に特に制限はないが、通常、直方体状とされる。また、その寸法にも特に制限はなく、用途に応じて適当な寸法とすればよい。
誘電体層2は、本実施形態に係る誘電体磁器組成物から構成されている。該誘電体磁器組成物は、一般式{A1−x(RE)2x/3}y−D2O5+yで表され、タングステンブロンズ構造を有する化合物と、「M」元素の酸化物と、を含む。
内部電極層3に含有される導電材は特に限定されず、たとえばNi,Cu、Ag,Pdあるいはこれらの合金など公知の導電材を用いればよい。内部電極層3の厚さは用途等に応じて適宜決定すればよい。
外部電極4に含有される導電材は特に限定されず、たとえばNi,Cu、Ad、Pd,Ptあるいはこれらの合金、導電性樹脂など公知の導電材を用いればよい。外部電極4の厚さは用途等に応じて適宜決定すればよい。
本実施形態の積層セラミックコンデンサ1は、公知の方法により製造すればよい。本実施形態では、ペーストを用いてグリーンチップを作製し、これを焼成することで、積層セラミックコンデンサを製造する。以下、製造方法について具体的に説明する。
まず、一般式{A1−x(RE)2x/3}y−D2O5+yで表される化合物の粉末を準備した。一般式における「A」元素はBa、「RE」元素はLa、「D」元素はNbであり、xは0.40、yは1.000とした。
また、実験1では、上記の試料との比較のため、一般式BaTiO3で表される化合物を用いてコンデンサ試料を作製した。まず、誘電体原料として、該化合物の粉末を準備した。この粉末を用いた以外は、上記の試料と同様の方法により円盤状のセラミックコンデンサの試料を得た。
まず、得られた焼結体の直径Rを測定した。そして、金型の直径RAと、直径Rとに基づき、以下の式を用いて、縮率を算出した。
縮率(%)=100×(RA−R)/RA
縮率が大きいと、焼結体の密度が高いことを意味する。焼結体の密度が高まると耐湿性が向上するため、高湿度環境下でも好適に使用できる電子部品が得られる。さらに密度が高まることで焼結体の硬さも向上し構造欠陥を防ぐことが可能となる。本実施例では、縮率が16.5%以上を良好とした。結果を表1に示す。
コンデンサ試料に対し、基準温度25℃において、HP社製4284Aを用いて、周波数1kHz、測定電圧1Vrmsとし、静電容量Cを測定した。そして、比誘電率を、焼結体の厚みと、有効電極面積と、測定の結果得られた静電容量Cとに基づき算出した。本実施例では、比誘電率は高い方が好ましく、250以上がより好ましい。結果を表1に示す。
まず、DC−Bias特性を測定するための試料を作製した。上記で準備した誘電体原料にバインダ樹脂と溶剤とを混合してペーストを作製した。得られたペーストを用いてグリーンシートを形成し、その上にPt電極を印刷し、脱バインダ処理、還元焼成、再酸化処理を行って、積層セラミックコンデンサ試料を作製した。Pt電極間の距離(誘電体層の厚み)は5μmであり、誘電体層の層数は4層とした。得られた試料に対し、直流電圧を加えない状態と、20V/μmの直流電圧を加えた状態で、周波数1kHz、測定電圧1Vrmsの測定条件下で静電容量を測定した。そして、直流電圧を加えない状態での静電容量に対して、直流電圧を加えた状態での静電容量が変化した割合をDC−Bias特性とした。すなわち、DC−Bias特性が負である場合には、直流電圧を加えると、静電容量が低下したことを示す。本実施例では、DC−Bias特性は0に近い方が好ましく、±5%以内を良好とした。結果を表1に示す。
誘電体原料として、実験1で用いた化合物粉末およびMの酸化物粉末と、Mgの酸化物粉末とを混合したものを用い、焼成後の組成が表2に示す組成になるように調整した以外は、実験1の試料番号4と同様にして、セラミックコンデンサの試料を作製し、縮率および比誘電率の評価に加え、下記に示す「過度の粒成長」の評価を行った。結果を表2に示す。
まず、焼成前のグリーン成形体の表面において、5×5mmの範囲を金属顕微鏡で観察し、面積が0.01mm2以上の粒子が存在するか否かを評価した。次に、焼成後の誘電体磁器組成物の表面において、5×5mmの範囲を金属顕微鏡で観察し、面積が0.1mm2以上の結晶粒子が存在するか否かを評価した。そして、焼成前の観察で、0.01mm2以上の粒子が観察されず、かつ焼成後の観察で、0.1mm2以上の結晶粒子が観察された場合に、「過度の粒成長」が生じたと判断した。なお、本実施例では、焼成前に面積が0.01mm2以上の粒子が観察された試料はなかった。
誘電体原料として、実験1で用いた化合物粉末およびSiの酸化物粉末と、Mgの酸化物粉末と、Tiの酸化物粉末およびZrの酸化物粉末とを混合したものを用い、焼成後の組成が表3に示す組成になるように調整した以外は、実験1の試料番号4と同様にして、セラミックコンデンサの試料を作製し、実験2と同様の評価を行った。結果を表3に示す。
実験1で用いた化合物の一般式における「x」および「y」の値を表4に示す値とした以外は、実験1の試料番号4と同様にして、セラミックコンデンサの試料を作製し、縮率および比誘電率の評価を行った。結果を表4に示す。
10… コンデンサ素子本体
2… 誘電体層
3… 内部電極層
4… 外部電極
Claims (5)
- 一般式{A1−x(RE)2x/3}y−D2O5+yで表され、タングステンブロンズ構造を有する化合物と、Mの酸化物と、を有し、
前記Aは、Ba、Ca、SrおよびMgからなる群から選ばれる少なくとも1つ、前記Dは、NbおよびTaからなる群から選ばれる少なくとも1つ、前記REは、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、YbおよびLuからなる群から選ばれる少なくとも1つであり、
前記xおよびyが、0<x<1、y>0の関係を満足し、
前記Mは、Al、Si、BおよびLiからなる群から選ばれる少なくとも1つであることを特徴とする誘電体磁器組成物。 - Mgの酸化物をさらに有する請求項1に記載の誘電体磁器組成物。
- TiおよびZrからなる群から選ばれる少なくとも1つの酸化物をさらに有する請求項1または2に記載の誘電体磁器組成物。
- 前記Mの酸化物の含有量が、前記化合物100モルに対して、元素換算で、0.5〜5.0モルである請求項1〜3のいずれかに記載の誘電体磁器組成物。
- 請求項1〜4のいずれかに記載の誘電体磁器組成物から構成される誘電体層と、電極と、を有する電子部品。
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