JP5801274B2 - 誘電体組成物及びこれを含むセラミック電子部品 - Google Patents
誘電体組成物及びこれを含むセラミック電子部品 Download PDFInfo
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- JP5801274B2 JP5801274B2 JP2012225722A JP2012225722A JP5801274B2 JP 5801274 B2 JP5801274 B2 JP 5801274B2 JP 2012225722 A JP2012225722 A JP 2012225722A JP 2012225722 A JP2012225722 A JP 2012225722A JP 5801274 B2 JP5801274 B2 JP 5801274B2
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- 239000000203 mixture Substances 0.000 title claims description 31
- 239000000463 material Substances 0.000 claims description 50
- 239000000843 powder Substances 0.000 claims description 50
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 23
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 150000003624 transition metals Chemical group 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052755 nonmetal Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
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- 229910000299 transition metal carbonate Inorganic materials 0.000 description 2
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Description
母材粉末は、誘電体の主成分であり、BamTiO3(0.995≦m≦1.010)系誘電体粉末を用いることができる。
第1副成分として、少なくとも一つの希土類元素(rare earth element)を含む酸化物または炭酸塩を含むことができる。
第2副成分として、遷移金属を含む酸化物または炭酸塩を含むことができる。
第3副成分は、焼成温度を低めて焼結を促進する役割をするものであり、Si酸化物を含むことができ、他の例としては、Si元素を含むガラス(glass)形態などを含むことができる。
第4副成分は、焼成温度を低めて焼結を促進する役割をするものであり、Al酸化物を含むことができる。
第5副成分は、焼成温度を低めて焼結を促進する役割をするものであり、BaまたはCaのうち少なくとも一つを含む酸化物を含むことができる。
第6副成分は、本実施形態において必ずしも必要な成分ではなく、本実施形態の組成物に必要に応じて選択的に含ませることができる。
表1に記載された組成及び含量に従って、母材粉末と第1〜第5副成分及び第6副成分が選択的に含まれた原料粉末を、ジルコニアボールを混合及び分散メディアとして用い、エタノール及びトルエンを溶媒として分散剤及びバインダと混合した後、約20時間ボールミルしてスラリーを製造した。
MLCCチップの常温静電容量及び誘電損失は、LCR meterを利用して、1kHz、1Vの条件で測定し、サンプルを10個ずつ取って常温絶縁をDC50V印加した状態で約60秒経過後に測定した。この際、誘電定数は10の位を切り上げた値を示す。
110 セラミック素体
111 誘電体層
120a、120b 第1及び第2外部電極
130a、130b 第1及び第2内部電極
Claims (13)
- BamTiO3(0.995≦m≦1.010)を含む母材粉末と、
前記母材粉末100モルに対して、少なくとも一つの希土類元素を含む酸化物または炭酸塩0.05〜4.00モルを含む第1副成分と、
前記母材粉末100モルに対して、少なくとも一つの遷移金属を含む酸化物または炭酸塩0.05〜0.70モルを含む第2副成分と、
前記母材粉末100モルに対して、Si酸化物0.20〜2.00モルを含む第3副成分と、
前記母材粉末100モルに対して、Al酸化物0.02〜1.00モルを含む第4副成分と、
前記第3副成分に対して、BaまたはCaのうち少なくとも一つを含む酸化物20〜140%を含む第5副成分と、
前記母材粉末100モルに対して、Zr酸化物0.01〜1.00モルと、
を含み、各副成分の含量は副成分の原子モルを基準とする誘電体組成物。 - 前記誘電体組成物の平均グレインサイズ(grain size)が少なくとも0.75μm以下であることを特徴とする請求項1に記載の誘電体組成物。
- 前記母材粉末100モルに対して、Mg酸化物または炭酸塩0.01〜2.50モルをさらに含むことを特徴とする請求項1に記載の誘電体組成物。
- 前記第1副成分の希土類元素は、Y、Dy、Ho、Er、Gdであることを特徴とする請求項1に記載の誘電体組成物。
- 前記第2副成分の遷移金属は、Mo、W、Mn、Fe、Co、Ni、V、Cr、Cu及びZnからなる群から選択される少なくとも一つであることを特徴とする請求項1に記載の誘電体組成物。
- 複数の誘電体層が積層されたセラミック素体と、
前記セラミック素体の内部に形成され、非金属を含む内部電極と、
前記セラミック素体の外表面に形成され、前記内部電極と電気的に連結された外部電極と、を含み、
前記誘電体層は、BamTiO3(0.995≦m≦1.010)を含む母材粉末と、前記母材粉末100モルに対して、少なくとも一つの希土類元素を含む酸化物または炭酸塩0.05〜4.00モルを含む第1副成分と、前記母材粉末100モルに対して、少なくとも一つの遷移金属を含む酸化物または炭酸塩0.05〜0.70モルを含む第2副成分と、前記母材粉末100モルに対して、Si酸化物0.20〜2.00モルを含む第3副成分と、前記母材粉末100モルに対して、Al酸化物0.02〜1.00モルを含む第4副成分と、前記第3副成分に対して、BaまたはCaのうち少なくとも一つを含む酸化物20〜140%を含む第5副成分と、前記母材粉末100モルに対して、Zr酸化物0.01〜1.00モルと、を含み、各副成分の含量は副成分の原子モルを基準とするセラミック電子部品。 - 前記誘電体組成物の平均グレインサイズ(grain size)が少なくとも0.75μm以下であることを特徴とする請求項6に記載のセラミック電子部品。
- 前記母材粉末100モルに対して、Mg酸化物または炭酸塩0.01〜2.50モルをさらに含むことを特徴とする請求項6に記載のセラミック電子部品。
- 前記第1副成分の希土類元素は、Y、Dy、Ho、Er、Gdであることを特徴とする請求項6に記載のセラミック電子部品。
- 前記第2副成分の遷移金属は、Mo、W、Mn、Fe、Co、Ni、V、Cr、Cu及びZnからなる群から選択される少なくとも一つであることを特徴とする請求項6に記載のセラミック電子部品。
- 前記各誘電体層の厚さは0.2〜10μmであることを特徴とする請求項6に記載のセラミック電子部品。
- 前記内部電極は、NiまたはNi合金を含むことを特徴とする請求項6に記載のセラミック電子部品。
- 前記内部電極は、前記誘電体層と交互に積層されることを特徴とする請求項6に記載のセラミック電子部品。
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KR101532118B1 (ko) * | 2011-12-27 | 2015-06-29 | 삼성전기주식회사 | 유전체 조성물 및 이를 포함하는 세라믹 전자 부품 |
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US9076578B2 (en) | 2015-07-07 |
JP2013103876A (ja) | 2013-05-30 |
DE102012109362B4 (de) | 2018-09-20 |
KR20130052390A (ko) | 2013-05-22 |
KR101588916B1 (ko) | 2016-01-27 |
CN103102153B (zh) | 2015-09-30 |
US20130119827A1 (en) | 2013-05-16 |
DE102012109362A1 (de) | 2013-05-16 |
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