JP5509259B2 - 電子機器 - Google Patents

電子機器 Download PDF

Info

Publication number
JP5509259B2
JP5509259B2 JP2012122742A JP2012122742A JP5509259B2 JP 5509259 B2 JP5509259 B2 JP 5509259B2 JP 2012122742 A JP2012122742 A JP 2012122742A JP 2012122742 A JP2012122742 A JP 2012122742A JP 5509259 B2 JP5509259 B2 JP 5509259B2
Authority
JP
Japan
Prior art keywords
film
transistor
insulating film
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012122742A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012227530A (ja
JP2012227530A5 (enExample
Inventor
潤 小山
浩二 大力
奨 岡崎
芳隆 守屋
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012122742A priority Critical patent/JP5509259B2/ja
Publication of JP2012227530A publication Critical patent/JP2012227530A/ja
Publication of JP2012227530A5 publication Critical patent/JP2012227530A5/ja
Application granted granted Critical
Publication of JP5509259B2 publication Critical patent/JP5509259B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H10W90/724—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012122742A 2005-02-25 2012-05-30 電子機器 Expired - Fee Related JP5509259B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012122742A JP5509259B2 (ja) 2005-02-25 2012-05-30 電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005051867 2005-02-25
JP2005051867 2005-02-25
JP2012122742A JP5509259B2 (ja) 2005-02-25 2012-05-30 電子機器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006045181A Division JP5046529B2 (ja) 2005-02-25 2006-02-22 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013238724A Division JP5732514B2 (ja) 2005-02-25 2013-11-19 半導体装置
JP2013239445A Division JP5703362B2 (ja) 2005-02-25 2013-11-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2012227530A JP2012227530A (ja) 2012-11-15
JP2012227530A5 JP2012227530A5 (enExample) 2014-01-09
JP5509259B2 true JP5509259B2 (ja) 2014-06-04

Family

ID=36969892

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2012122742A Expired - Fee Related JP5509259B2 (ja) 2005-02-25 2012-05-30 電子機器
JP2013238724A Active JP5732514B2 (ja) 2005-02-25 2013-11-19 半導体装置
JP2013239445A Expired - Fee Related JP5703362B2 (ja) 2005-02-25 2013-11-20 半導体装置
JP2014243057A Expired - Fee Related JP5918837B2 (ja) 2005-02-25 2014-12-01 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2013238724A Active JP5732514B2 (ja) 2005-02-25 2013-11-19 半導体装置
JP2013239445A Expired - Fee Related JP5703362B2 (ja) 2005-02-25 2013-11-20 半導体装置
JP2014243057A Expired - Fee Related JP5918837B2 (ja) 2005-02-25 2014-12-01 半導体装置

Country Status (3)

Country Link
US (2) US7566633B2 (enExample)
JP (4) JP5509259B2 (enExample)
CN (1) CN100573881C (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100970194B1 (ko) 2004-06-02 2010-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7651932B2 (en) * 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
EP1886355A4 (en) * 2005-05-31 2015-04-01 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7652214B2 (en) * 2005-11-02 2010-01-26 Panasonic Corporation Electronic component package
JP2007256914A (ja) * 2006-02-21 2007-10-04 Seiko Epson Corp アクティブマトリクス基板、電気光学装置、電子機器
JP2008066567A (ja) * 2006-09-08 2008-03-21 Ricoh Co Ltd 配線パターンとこれを用いた電子素子、有機半導体素子、積層配線パターンおよび積層配線基板
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
TWI611565B (zh) * 2006-09-29 2018-01-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US7941919B2 (en) * 2007-01-29 2011-05-17 Board Of Regents, The University Of Texas System Method of assembling an electronic textile
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US7973316B2 (en) * 2007-03-26 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US7851804B2 (en) * 2007-05-17 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI423519B (zh) * 2007-09-04 2014-01-11 Mitsubishi Electric Corp Radio frequency identification tag
WO2010035627A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011003522A (ja) 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
TWI518913B (zh) * 2008-11-07 2016-01-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102422338B (zh) 2009-05-02 2015-04-01 株式会社半导体能源研究所 显示设备
KR101860692B1 (ko) * 2009-05-02 2018-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 패널
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
KR20120068772A (ko) 2009-09-16 2012-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
TWI589042B (zh) * 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 發光裝置，撓性發光裝置，電子裝置，照明設備，以及發光裝置和撓性發光裝置的製造方法
KR101174834B1 (ko) 2012-04-05 2012-08-17 주식회사 다보씨앤엠 공정필름을 이용한 필름형 디스플레이 기판의 제조방법 및 이에 사용되는 필름형 디스플레이 기판 제조용 공정필름
KR102891143B1 (ko) 2012-08-10 2025-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 정보 단말 기기
TWI613709B (zh) * 2013-02-20 2018-02-01 財團法人工業技術研究院 半導體元件結構及其製造方法與應用其之畫素結構
JP2014182306A (ja) * 2013-03-19 2014-09-29 Japan Display Inc 表示装置、電子機器及び表示装置の製造方法
US9209207B2 (en) * 2013-04-09 2015-12-08 Apple Inc. Flexible display with bent edge regions
KR20180133562A (ko) * 2013-04-15 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9203050B2 (en) * 2013-05-21 2015-12-01 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
US11145838B2 (en) 2013-05-21 2021-10-12 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
US9472507B2 (en) * 2013-06-17 2016-10-18 Samsung Display Co., Ltd. Array substrate and organic light-emitting display including the same
US9269914B2 (en) 2013-08-01 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
CN109273622B (zh) 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI777433B (zh) 2013-09-06 2022-09-11 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
CN103545321B (zh) * 2013-11-11 2017-03-15 京东方科技集团股份有限公司 显示基板和含有该显示基板的柔性显示装置
US9427949B2 (en) 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
KR102107456B1 (ko) * 2013-12-10 2020-05-08 삼성디스플레이 주식회사 플렉시블 표시 장치 및 이의 제조 방법
CN104752365A (zh) * 2013-12-27 2015-07-01 昆山国显光电有限公司 一种柔性显示器及其制备方法
JP6549150B2 (ja) * 2014-01-06 2019-07-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． コンフォーマル電子デバイスの封入方法
KR102368997B1 (ko) 2014-06-27 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
CN111710794B (zh) 2014-10-17 2024-06-28 株式会社半导体能源研究所 发光装置、模块、电子设备以及发光装置的制造方法
KR20210039507A (ko) * 2014-11-28 2021-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
KR102343656B1 (ko) * 2015-01-15 2021-12-27 삼성디스플레이 주식회사 유기 발광 표시 장치
CN107710313B (zh) * 2015-06-18 2020-01-10 夏普株式会社 柔性电子器件和柔性电子器件的制造方法
KR102632066B1 (ko) 2015-07-30 2024-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
JP2017147044A (ja) * 2016-02-15 2017-08-24 株式会社ジャパンディスプレイ 表示装置、および表示装置の作製方法
JP6715708B2 (ja) * 2016-07-08 2020-07-01 株式会社ジャパンディスプレイ 表示装置
US10217957B2 (en) 2016-10-13 2019-02-26 Sharp Kabushiki Kaisha Organic EL display device and method of manufacturing organic EL display device
CN106585069A (zh) * 2016-12-23 2017-04-26 武汉华星光电技术有限公司 柔性基板、面板及丝网印刷机制作柔性基板、面板的方法
US11152580B2 (en) 2017-03-30 2021-10-19 Sharp Kabushiki Kaisha Flexible display device
TWI645389B (zh) * 2017-11-15 2018-12-21 友達光電股份有限公司 可撓性電子裝置
WO2019171198A1 (ja) * 2018-03-06 2019-09-12 株式会社半導体エネルギー研究所 半導体装置
CN108847134B (zh) * 2018-06-13 2021-05-14 云谷（固安）科技有限公司 一种可拉伸显示屏装置及其制造方法
CN109378327B (zh) * 2018-09-26 2021-02-12 云谷（固安）科技有限公司 显示面板及显示装置
CN109686251B (zh) * 2018-12-25 2021-12-31 厦门天马微电子有限公司 一种柔性显示面板及显示装置
CN110028908A (zh) * 2018-12-25 2019-07-19 瑞声科技(新加坡)有限公司 玻璃软膜结构及其制作方法
CN110028909A (zh) * 2018-12-25 2019-07-19 瑞声科技(新加坡)有限公司 玻璃软膜结构及其制作方法
US12376373B2 (en) 2019-11-01 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7664171B2 (ja) 2019-11-08 2025-04-17 株式会社半導体エネルギー研究所 半導体装置
CN114137754B (zh) * 2021-11-30 2022-10-21 绵阳惠科光电科技有限公司 曲面屏及显示装置
CN119644625B (zh) * 2024-12-02 2025-09-12 东南大学 基于tft变容管和tft驱动阵列的玻璃基电磁调控阵列

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
CN1143394C (zh) * 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
US6199533B1 (en) * 1999-02-01 2001-03-13 Cummins Engine Company, Inc. Pilot valve controlled three-way fuel injection control valve assembly
AU2690400A (en) 1999-02-24 2000-09-14 Hitachi Maxell, Ltd. Ic device and its production method, and information carrier mounted with ic device and its production method
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP4748859B2 (ja) 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
JP4495295B2 (ja) 2000-03-15 2010-06-30 株式会社日立製作所 有価証券類の不正利用防止方法および有価証券類の不正利用防止システム
JP2002083866A (ja) * 2000-09-07 2002-03-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
WO2002067329A1 (en) * 2001-02-16 2002-08-29 Ignis Innovation Inc. Flexible display device
GB0108309D0 (en) * 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
TW564471B (en) * 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
TW586231B (en) * 2001-07-24 2004-05-01 Seiko Epson Corp Transfer method, methods of manufacturing thin film devices and integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, manufacturing methods of IC card and electronic appliance
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP3956697B2 (ja) 2001-12-28 2007-08-08 セイコーエプソン株式会社 半導体集積回路の製造方法
TWI272641B (en) * 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4748943B2 (ja) * 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005032979A (ja) * 2003-07-14 2005-02-03 Canon Inc 有機薄膜トランジスタおよびその製造方法
WO2005057658A1 (en) 2003-12-15 2005-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
JP4060289B2 (ja) * 2004-05-26 2008-03-12 株式会社半導体エネルギー研究所 携帯型コンピュータ

Also Published As

Publication number Publication date
US7566633B2 (en) 2009-07-28
JP2012227530A (ja) 2012-11-15
JP5703362B2 (ja) 2015-04-15
JP5732514B2 (ja) 2015-06-10
CN1832179A (zh) 2006-09-13
CN100573881C (zh) 2009-12-23
JP2015062252A (ja) 2015-04-02
JP2014068029A (ja) 2014-04-17
US20060202206A1 (en) 2006-09-14
US7906784B2 (en) 2011-03-15
US20090194771A1 (en) 2009-08-06
JP5918837B2 (ja) 2016-05-18
JP2014068028A (ja) 2014-04-17

Similar Documents

Publication Publication Date Title
JP5918837B2 (ja) 半導体装置
JP5046529B2 (ja) 半導体装置
JP7250882B2 (ja) 半導体装置、電子機器
US8373172B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP2008103706A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131119

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131203

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140318

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140324

R150 Certificate of patent or registration of utility model

Ref document number: 5509259

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees