CN103545321B - 显示基板和含有该显示基板的柔性显示装置 - Google Patents
显示基板和含有该显示基板的柔性显示装置 Download PDFInfo
- Publication number
- CN103545321B CN103545321B CN201310557272.7A CN201310557272A CN103545321B CN 103545321 B CN103545321 B CN 103545321B CN 201310557272 A CN201310557272 A CN 201310557272A CN 103545321 B CN103545321 B CN 103545321B
- Authority
- CN
- China
- Prior art keywords
- base plate
- display base
- stress absorption
- tft
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 35
- 238000002161 passivation Methods 0.000 claims description 31
- 239000012212 insulator Substances 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000005452 bending Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/07—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 buffer layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
- G02F2201/503—Arrangements improving the resistance to shock
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供一种显示基板和含有该显示基板的柔性显示装置,属于显示技术领域,其可解决现有的显示基板弯曲时薄膜晶体管发生损毁导致显示基板可靠性差的问题。本发明的显示基板,通过在显示基板上引入由树脂材料制备的应力吸收单元,使显示基板在弯曲过程中产生的应力通过树脂材料释放掉,显示基板上的薄膜晶体管不易发生损坏,从而增强了整个显示基板的可靠性。
Description
技术领域
本发明属于显示技术领域,具体涉及一种显示基板和含有该显示基板的柔性显示装置
背景技术
柔性显示装置具有诸多优点,例如耐冲击、抗震能力强、重量轻、体积小,携带更加方便等特点。目前主要的柔性显示装置大致可分为三种:电子纸(或柔性电泳显示)、柔性有机发光二极管(OLED)和柔性液晶等。
柔性显示装置包括显示基板,显示基板包括柔性基板和位于柔性基板上的结构,其中柔性基板为聚酰亚胺(PI)基板,聚对苯二甲酸乙二醇酯(PET)基板等;柔性基板上的结构包括薄膜晶体管(TFT)。现有技术中的柔性显示装置的显示基板通常要用到绝缘层,例如,栅极绝缘层、层间绝缘层、钝化层。上述的绝缘层通常由SiNx或SiOx物质制作,导致上述的绝缘层韧性较差,柔性显示装置在弯曲时易造成绝缘层的断裂,使柔性显示装置的显示基板上的TFT容易发生损坏。例如,由于弯折时应力的聚集,可能导致TFT的断裂,势必会对TFT性能产生影响,从而影响柔性显示装置的可靠性,对显示质量造成不良影响。
发明内容
本发明的目的是解决现有技术中显示基板弯曲时薄膜晶体管发生损毁导致显示基板可靠性差的问题,提供一种可靠性强的显示基板。
解决本发明技术问题所采用的技术方案是一种显示基板,该显示基板,包括:基板和设置在该基板上的薄膜晶体管,显示基板还包括设置在所述的薄膜晶体管相邻区域的应力吸收单元。
本发明提供的显示基板,通过在显示基板上引入由树脂材料制备的应力吸收单元,使显示基板在弯曲过程中产生的应力通过透明树脂材料释放掉,显示基板上的薄膜晶体管不易发生损坏,从而增强了整个显示基板的可靠性。
优选的是,所述的薄膜晶体管上方设置有与薄膜晶体管的漏极电性连接的阳极,所述的阳极上方依次设有发光层、阴极;所述的阳极、发光层、阴极重叠区域形成发光区域;所述的应力吸收单元位于所述的发光区域的对应下方。
优选的是,所述的基板上设置有多个绝缘层;所述的应力吸收单元部分取代位于所述的薄膜晶体管相邻区域的绝缘层中的任意一层或多层。
优选的是,所述的应力吸收单元为多个。
优选的是,所述的多个绝缘层为在基板上依次设置的栅极绝缘层、层间绝缘层、第一钝化层;所述的应力吸收单元部分取代位于所述的薄膜晶体管相邻区域的的栅极绝缘层、层间绝缘层、第一钝化层中的任意一层或多层。
进一步优选的是,所述的应力吸收单元部分取代位于所述的薄膜晶体管相邻区域的栅极绝缘层、层间绝缘层、第一钝化层。
优选的是,所述的应力吸收单元为多个。
优选的是,所述的应力吸收单元的材料为树脂材料。
进一步优选的是,所述的树脂材料为丙烯酸树脂或聚酰亚胺树脂。
本发明的另一个目的是提供一种柔性显示装置,所述的柔性显示装置包括上述的显示基板。
上述的显示基板具有较高的可靠性,从而增强了整个柔性显示装置的可靠性。
附图说明
图1为实施例1中应力吸收单元部分取代栅极绝缘层、层间绝缘层、第一钝化层时显示基板的截面示意图。
图2为实施例1中应力吸收单元部分取代栅极绝缘层、第一钝化层时显示基板的截面示意图。
图3为实施例1中应力吸收单元在平行于基板方向上间隔设置、部分取代栅极绝缘层、层间绝缘层、第一钝化层时显示基板的截面示意图。
其中:
1.基板;2.栅极绝缘层;3.层间绝缘层;4.第一钝化层;5.栅极;6.漏极;7.有源层;8.源极;9.应力吸收单元;10.阳极;11.发光层;12.阴极;13.第二钝化层;14.薄膜层;15.像素界定层;16.发光区域。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1
如图1-3所示,本实施例提供一种显示基板,包括:基板1和设置在该基板1上的薄膜晶体管(TFT),在所述的薄膜晶体管的相邻区域设置的应力吸收单元9。所述的相邻区域指TFT所在的像素区域。
所述的应力吸收单元9采用树脂材料制造,所述的树脂材料为丙烯酸树脂,也可以聚酰亚胺树脂等其它具有弹性形变能力的树脂。当基板1发生弯折时,应力吸收单元9发生弹性形变吸收基板1发生变形的聚集的应力,从而保护TFT等类似的薄膜晶体管发生损坏,保证了器件的可靠性。
所述的基板1可以是聚酰亚胺(PI)基板或聚对苯二甲酸乙二醇酯(PET)基板,即具有一定挠性的基板。
本实施例所述的TFT采用顶栅结构,其包括源极8、漏极6、有源层7、栅极5等,当然,所述的TFT也可以采用底栅结构。
本实施例的显示基板可以是有机发光二极管显示基板、液晶显示基板、或电子纸显示基板等。
TFT上方设有与TFT的漏极6电性连接的阳极10,所述的阳极10上方依次设有发光层11、阴极12;所述的阳极10、发光层11、阴极12重叠区域形成发光区域16;所述的应力吸收单元9位于所述的发光区域16的对应下方。
还可以在上述的阴极12上依次设有第二钝化层13和薄膜层14。
本实施例采用有机发光二极管的阳极与所述TFT的漏极电性连接;当然,还可以采用有机发光二极管的阴极与所述TFT的漏极电性连接,这种结构的有机发光二极管为倒置型有机电致发光二极管。
基板1上设置有多个绝缘层,例如,依次设置的栅极绝缘层2、层间绝缘层3、第一钝化层4,它们一般采用SiNx或SiOx材料制作,韧性较差。对于采用不同TFT结构的显示基板,绝缘层的具体数量和结构可能不同,例如,可能多于或少于三层,绝缘层的命名也可能会有所不同。
所述的应力吸收单元9部分取代位于所述的薄膜晶体管相邻区域的绝缘层中的任意一层或多层。
例如,应力吸收单元9可以部分取代位于TFT相邻区域的栅极绝缘层2、层间绝缘层3、第一钝化层4中的任意一层或多层,此时,所述的应力吸收单元9为一个或多个。
如图1所示,应力吸收单元9部分取代栅极绝缘层2、层间绝缘层3、第一钝化层4。
如图2所示,应力吸收单元9部分取代栅极绝缘层2、第一钝化层4,此时,所述的应力吸收单元9为2个,即应力吸收单元9在垂直于基板的方向上呈间隔设置。应力吸收单元9也可以部分取代栅极绝缘层2、第一钝化层4。
如图3所示,应力吸收单元9还可以在平行于基板1方向上间隔设置。部分取代栅极绝缘层2、层间绝缘层3、第一钝化层4的应力吸收单元9在平行于基板1的方向上间隔设置。例如,制作时可在TFT相邻区域可以形成多个开口,并在多个开口中形成多个应力吸收单元9。如图3所示,在栅极绝缘层2、层间绝缘层3、第一钝化层4中形成多个开口,并在开口中形成多个应力吸收单元9,开口为3个,相应地应力吸收单元9也为3个。
本发明通过在显示基板上引入由透明树脂材料制备的应力吸收单元,使显示基板在弯曲过程中产生的应力通过树脂材料释放掉,显示基板上的薄膜晶体管不易发生损坏,从而增强了整个显示基板的可靠性。
上述的显示基板采用下述的方法制备:
1.在基板1上制备有源层7、栅极绝缘层2、栅极5、层间绝缘层3、源极8、漏极6、第一钝化层4。上述的各层的制备方法为现有技术范畴,在此不再一一赘述。
将与各发光区域16对应的第一钝化层4、层间绝缘层3、栅极绝缘层2通过构图工艺刻蚀掉,形成一个穿透第一钝化层4、层间绝缘层3、栅极绝缘层2的开口,并用树脂材料填充该开口,即可做出如图1所示的应力吸收单元9。
当然,对于如图2所示的应力吸收单元9,则在形成栅极绝缘层2之后,通过与应力吸收单元9形状相应掩膜板刻蚀栅极绝缘层,形成栅极绝缘层开口,然后,对栅极绝缘层开口填充树脂材料;形成层间绝缘层3,形成第一钝化层4,然后,按同样的方法刻蚀掉第一钝化层4,形成第一钝化层开口,对第一钝化层开口填充树脂材料,即可获得如图2所示的在垂直于基板1的方向上呈间隔设置的应力吸收单元9。
当然,对于如图3所示的应力吸收单元9,则采用与应力吸收单元9形状相应的掩膜板,通过对第一钝化层4、层间绝缘层3、栅极绝缘层2进行刻蚀,获得多个开口,然后用透明树脂材料填充所述的多个开口,即可获得如图3所示的在平行于基板1的方向上呈间隔设置的应力吸收单元9。
上述的用树脂材料填充所述开口,可以是采用印刷方式例如喷墨打印将树脂材料填充所述开口;也可以是在所述开口处涂覆感光树脂材料,进行曝光、显影,去除非开口处的感光树脂,将树脂材料填充所述开口。
上述只是示例性的说明,多个绝缘层,例如,第一钝化层4、层间绝缘层3、栅极绝缘层2,在采用不同TFT结构的基板1中可能不同,上述应力吸收单元9的制作方法也涵盖不同结构的显示基板1。
2.在漏极6之上的第一钝化层4上开设过孔,并通过构图工艺制备阳极10。过孔和阳极10制备方法为现有技术范畴,在此不再一一赘述。
3.制备像素界定层15、有机发光层11和阴极12,各层的制备方法为现有技术范畴,在此不再一一赘述。
4.在阴极12上面制备第二钝化层13,在第二钝化层13上涂覆薄膜层14,进行显示基板的封装。
当然,也可以在第二钝化层13上涂覆粘结胶,并通过粘结胶粘附第二基板进行显示基板的封装。
实施例2
本实施例提供一种柔性显示装置,所述的柔性显示装置包括上述的显示基板,优选地,所述柔性显示装置为柔性有机发光二极管显示装置。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (9)
1.一种显示基板,包括:基板和设置在该基板上的薄膜晶体管,其特征在于,
显示基板还包括设置在所述的薄膜晶体管相邻区域的开口,以及填充在所述开口中的应力吸收单元;所述的基板上设置有多个绝缘层;所述开口贯穿所述多个的绝缘层中的任意一层。
2.如权利要求1所述的显示基板,其特征在于,所述的薄膜晶体管上方设置有与薄膜晶体管的漏极电性连接的阳极,所述的阳极上方依次设有发光层、阴极;所述的阳极、发光层、阴极重叠区域形成发光区域;所述的应力吸收单元位于所述的发光区域的对应下方。
3.如权利要求1所述的显示基板,其特征在于,所述的应力吸收单元为多个。
4.如权利要求1所述的显示基板,其特征在于,所述的多个绝缘层为在基板上依次设置的栅极绝缘层、层间绝缘层、第一钝化层;所述的应力吸收单元部分取代位于所述的薄膜晶体管相邻区域的的栅极绝缘层、层间绝缘层、第一钝化层中的任意一层或多层。
5.如权利要求4所述的显示基板,其特征在于,所述的应力吸收单元部分取代位于所述的薄膜晶体管相邻区域的栅极绝缘层、层间绝缘层、第一钝化层。
6.如权利要求4所述的显示基板,其特征在于,所述的应力吸收单元为多个。
7.如权利要求1所述的显示基板,其特征在于,所述的应力吸收单元的材料为树脂材料。
8.如权利要求7所述的显示基板,其特征在于,所述的树脂材料为丙烯酸树脂或聚酰亚胺树脂。
9.一种柔性显示装置,其特征在于,所述的柔性显示装置包括:如权利要求1-8任一所述的显示基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310557272.7A CN103545321B (zh) | 2013-11-11 | 2013-11-11 | 显示基板和含有该显示基板的柔性显示装置 |
PCT/CN2014/078073 WO2015067028A1 (zh) | 2013-11-11 | 2014-05-22 | 显示基板及其制造方法和含有该显示基板的柔性显示装置 |
US14/403,692 US10319751B2 (en) | 2013-11-11 | 2014-05-22 | Display substrate and manufacturing method thereof, and flexible display device having display substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310557272.7A CN103545321B (zh) | 2013-11-11 | 2013-11-11 | 显示基板和含有该显示基板的柔性显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103545321A CN103545321A (zh) | 2014-01-29 |
CN103545321B true CN103545321B (zh) | 2017-03-15 |
Family
ID=49968622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310557272.7A Active CN103545321B (zh) | 2013-11-11 | 2013-11-11 | 显示基板和含有该显示基板的柔性显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10319751B2 (zh) |
CN (1) | CN103545321B (zh) |
WO (1) | WO2015067028A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545321B (zh) | 2013-11-11 | 2017-03-15 | 京东方科技集团股份有限公司 | 显示基板和含有该显示基板的柔性显示装置 |
KR102383076B1 (ko) * | 2015-01-22 | 2022-04-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102367251B1 (ko) * | 2015-02-02 | 2022-02-25 | 삼성디스플레이 주식회사 | 표시 장치 |
CN104795403B (zh) | 2015-04-16 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种柔性基板及其制作方法、显示装置 |
US10083989B2 (en) | 2015-12-10 | 2018-09-25 | Industrial Technology Research Institute | Semiconductor device |
CN106158918B (zh) * | 2016-09-30 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示器及其制备方法 |
CN106898635B (zh) * | 2017-02-28 | 2020-04-07 | 上海天马微电子有限公司 | 显示面板、显示装置 |
CN110494906B (zh) * | 2017-03-31 | 2022-03-04 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
CN107359177B (zh) * | 2017-06-28 | 2020-03-31 | 武汉华星光电半导体显示技术有限公司 | 一种柔性背板的制作方法、液晶显示面板以及oled显示面板 |
CN109037278B (zh) * | 2018-07-23 | 2022-06-17 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN109103224A (zh) * | 2018-08-20 | 2018-12-28 | 云谷(固安)科技有限公司 | Tft基板和显示面板 |
CN109192858B (zh) * | 2018-09-19 | 2020-04-28 | 京东方科技集团股份有限公司 | 柔性基板、阵列基板、显示面板及制备方法和显示装置 |
CN109378327B (zh) * | 2018-09-26 | 2021-02-12 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN109326633B (zh) * | 2018-09-30 | 2022-01-28 | 厦门天马微电子有限公司 | 一种显示面板及显示装置 |
KR20210003992A (ko) * | 2019-07-02 | 2021-01-13 | 삼성디스플레이 주식회사 | 표시 장치 |
CN211236526U (zh) * | 2019-11-22 | 2020-08-11 | 京东方科技集团股份有限公司 | 显示装置及其显示面板、阵列基板 |
CN111415947B (zh) * | 2020-03-27 | 2022-10-28 | 维沃移动通信有限公司 | 显示基板及其制造方法、显示面板和电子设备 |
CN114141828B (zh) * | 2021-11-17 | 2024-02-06 | 深圳市华星光电半导体显示技术有限公司 | 显示面板、显示面板的制作方法以及显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101241915A (zh) * | 2007-02-05 | 2008-08-13 | Lg.菲利浦Lcd株式会社 | 显示基板、显示器件及其制造方法 |
CN102790094A (zh) * | 2011-05-19 | 2012-11-21 | 索尼公司 | 器件和显示单元 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
US7566633B2 (en) * | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7973316B2 (en) * | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR101820166B1 (ko) * | 2010-12-24 | 2018-01-19 | 엘지디스플레이 주식회사 | 화이트 유기발광다이오드 표시소자 및 그 제조방법 |
KR20150046963A (ko) * | 2013-10-23 | 2015-05-04 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 플렉서블 표시 장치의 제조 방법 |
CN103545321B (zh) | 2013-11-11 | 2017-03-15 | 京东方科技集团股份有限公司 | 显示基板和含有该显示基板的柔性显示装置 |
-
2013
- 2013-11-11 CN CN201310557272.7A patent/CN103545321B/zh active Active
-
2014
- 2014-05-22 US US14/403,692 patent/US10319751B2/en active Active
- 2014-05-22 WO PCT/CN2014/078073 patent/WO2015067028A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101241915A (zh) * | 2007-02-05 | 2008-08-13 | Lg.菲利浦Lcd株式会社 | 显示基板、显示器件及其制造方法 |
CN102790094A (zh) * | 2011-05-19 | 2012-11-21 | 索尼公司 | 器件和显示单元 |
Also Published As
Publication number | Publication date |
---|---|
CN103545321A (zh) | 2014-01-29 |
WO2015067028A1 (zh) | 2015-05-14 |
US10319751B2 (en) | 2019-06-11 |
US20150287747A1 (en) | 2015-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103545321B (zh) | 显示基板和含有该显示基板的柔性显示装置 | |
CN103545320B (zh) | 显示基板和含有该显示基板的柔性显示装置 | |
CN103794628B (zh) | 有机发光显示装置及其制造方法 | |
CN103426904B (zh) | 一种柔性有机发光二极管显示器及其制备方法 | |
CN104795403B (zh) | 一种柔性基板及其制作方法、显示装置 | |
CN103811501B (zh) | 柔性显示装置 | |
CN103794736B (zh) | 柔性有机电致发光装置 | |
CN105374947B (zh) | 有机电致发光器件及其制备方法 | |
CN104103775B (zh) | 柔性显示设备,及用于制造柔性显示设备的方法 | |
CN103794631A (zh) | 柔性有机电致发光装置及其制造方法 | |
KR20160025152A (ko) | 보호 구조물 및 보호 구조물을 포함하는 유기 발광 표시 장치 | |
CN103872078A (zh) | 有机发光二极管装置及其制造方法 | |
CN107482042A (zh) | Oled显示基板及其制作方法、oled显示装置 | |
KR102100656B1 (ko) | 유기전계발광 표시소자 및 그 제조방법 | |
CN104867405A (zh) | 显示装置和制造显示装置的方法 | |
CN104282729A (zh) | 一种有机发光显示面板及其制备方法、显示装置 | |
CN107785392A (zh) | 显示装置 | |
CN208045503U (zh) | Oled显示面板 | |
CN203746831U (zh) | 一种柔性显示器 | |
JPWO2019064342A1 (ja) | 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置 | |
CN108110029A (zh) | 显示装置 | |
CN103681694A (zh) | 一种柔性显示基板及柔性显示器 | |
CN105960711A (zh) | 像素驱动电路 | |
KR101311670B1 (ko) | 유기전계발광표시장치 및 그 제조방법 | |
JP6744479B2 (ja) | 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |