JP5508662B2 - 表示装置 - Google Patents
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- Publication number
- JP5508662B2 JP5508662B2 JP2007004106A JP2007004106A JP5508662B2 JP 5508662 B2 JP5508662 B2 JP 5508662B2 JP 2007004106 A JP2007004106 A JP 2007004106A JP 2007004106 A JP2007004106 A JP 2007004106A JP 5508662 B2 JP5508662 B2 JP 5508662B2
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- Prior art keywords
- electrode
- video signal
- transistor
- liquid crystal
- circuit
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
- G09G3/342—Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007004106A JP5508662B2 (ja) | 2007-01-12 | 2007-01-12 | 表示装置 |
| US11/972,159 US8643583B2 (en) | 2007-01-12 | 2008-01-10 | Display device |
| KR1020080003371A KR101536102B1 (ko) | 2007-01-12 | 2008-01-11 | 표시장치 |
| US14/170,693 US9171492B2 (en) | 2007-01-12 | 2014-02-03 | Display device |
| US14/713,065 US9734802B2 (en) | 2007-01-12 | 2015-05-15 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007004106A JP5508662B2 (ja) | 2007-01-12 | 2007-01-12 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2013195121A Division JP5696190B2 (ja) | 2013-09-20 | 2013-09-20 | 表示装置 |
Publications (3)
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| JP2008170749A JP2008170749A (ja) | 2008-07-24 |
| JP2008170749A5 JP2008170749A5 (enExample) | 2010-02-25 |
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| US (3) | US8643583B2 (enExample) |
| JP (1) | JP5508662B2 (enExample) |
| KR (1) | KR101536102B1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11270615B2 (en) | 2019-08-08 | 2022-03-08 | Silicon Works Co., Ltd. | Display device |
Families Citing this family (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101424784B1 (ko) | 2006-01-10 | 2014-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 제조방법 |
| CN101329484B (zh) * | 2007-06-22 | 2010-10-13 | 群康科技(深圳)有限公司 | 液晶显示装置之驱动电路及其驱动方法 |
| TWI413071B (zh) * | 2008-06-11 | 2013-10-21 | Novatek Microelectronics Corp | 用於液晶顯示器降低消耗功率之驅動方法及相關裝置 |
| US8400570B2 (en) * | 2008-10-09 | 2013-03-19 | Manufacturing Resources International, Inc. | System and method for displaying multiple images/videos on a single display |
| US8689343B2 (en) | 2008-10-24 | 2014-04-01 | Manufacturing Resources International, Inc. | System and method for securely transmitting video data |
| KR101065313B1 (ko) * | 2008-11-14 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
| KR101633949B1 (ko) * | 2008-12-24 | 2016-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 및 그 구동 방법 |
| JP4821029B2 (ja) * | 2009-01-09 | 2011-11-24 | 奇美電子股▲ふん▼有限公司 | アクティブマトリクス型ディスプレイ装置及びこれを備える電子機器 |
| US8441574B2 (en) * | 2009-02-16 | 2013-05-14 | Manufacturing Resources International, Inc. | Visual identifier for images on an electronic display |
| EP2396964A4 (en) * | 2009-02-16 | 2013-02-20 | Mri Inc | FEEDBACK LOOP OF DISPLAY CHARACTERISTICS |
| WO2010099178A2 (en) * | 2009-02-24 | 2010-09-02 | Manufacturing Resources International, Inc. | System and method for displaying multiple images/videos on a single display |
| CA2753583A1 (en) * | 2009-02-24 | 2010-09-02 | Manufacturing Resources International, Inc. | System for distributing a plurality of unique video/audio streams |
| JP5740132B2 (ja) | 2009-10-26 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 表示装置及び半導体装置 |
| KR101788521B1 (ko) | 2009-10-30 | 2017-10-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102329497B1 (ko) * | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| WO2011062075A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile latch circuit and logic circuit, and semiconductor device using the same |
| IN2012DN04871A (enExample) | 2009-12-11 | 2015-09-25 | Semiconductor Energy Laoboratory Co Ltd | |
| KR102135817B1 (ko) | 2009-12-18 | 2020-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| WO2011074393A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
| WO2011074379A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
| US20120287110A1 (en) * | 2009-12-24 | 2012-11-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, drive method of liquid crystal display device, and electronic device |
| WO2011077925A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
| WO2011078373A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| CN102804603B (zh) * | 2010-01-20 | 2015-07-15 | 株式会社半导体能源研究所 | 信号处理电路及其驱动方法 |
| CN102714029B (zh) * | 2010-01-20 | 2016-03-23 | 株式会社半导体能源研究所 | 显示装置的显示方法 |
| KR101356248B1 (ko) * | 2010-02-19 | 2014-01-29 | 엘지디스플레이 주식회사 | 영상표시장치 |
| KR20120120458A (ko) | 2010-02-26 | 2012-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| US9697788B2 (en) * | 2010-04-28 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101328808B1 (ko) * | 2010-05-13 | 2013-11-13 | 엘지디스플레이 주식회사 | 영상표시장치 |
| US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TWI620176B (zh) * | 2010-10-05 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置及其驅動方法 |
| TWI621121B (zh) | 2011-01-05 | 2018-04-11 | Semiconductor Energy Laboratory Co., Ltd. | 儲存元件、儲存裝置、及信號處理電路 |
| JP5859839B2 (ja) | 2011-01-14 | 2016-02-16 | 株式会社半導体エネルギー研究所 | 記憶素子の駆動方法、及び、記憶素子 |
| TWI567735B (zh) | 2011-03-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體電路,記憶體單元,及訊號處理電路 |
| WO2012153697A1 (en) | 2011-05-06 | 2012-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
| JP6099368B2 (ja) | 2011-11-25 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP5923343B2 (ja) * | 2012-03-01 | 2016-05-24 | 株式会社ジャパンディスプレイ | 表示装置、表示装置の駆動方法、及び、電子機器 |
| US8754693B2 (en) | 2012-03-05 | 2014-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Latch circuit and semiconductor device |
| US9058892B2 (en) | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
| KR102082794B1 (ko) | 2012-06-29 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법, 및 표시 장치 |
| US8873308B2 (en) | 2012-06-29 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit |
| TWI618075B (zh) | 2012-11-06 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其驅動方法 |
| KR101977248B1 (ko) * | 2012-11-13 | 2019-08-28 | 엘지디스플레이 주식회사 | 표시장치와 그의 데이터 충전편차 보상방법 |
| WO2014084153A1 (en) | 2012-11-28 | 2014-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US20140159587A1 (en) * | 2012-12-12 | 2014-06-12 | Qualcomm Mems Technologies, Inc. | Dynamic adaptive illumination control for field sequential color mode transitions |
| KR20140100793A (ko) * | 2013-02-07 | 2014-08-18 | 삼성전자주식회사 | 자체발광 디스플레이 패널 및 이를 가지는 디스플레이장치 |
| KR102112367B1 (ko) | 2013-02-12 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2014157019A1 (en) | 2013-03-25 | 2014-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI485693B (zh) * | 2013-06-17 | 2015-05-21 | Novatek Microelectronics Corp | 源極驅動器 |
| US9535646B2 (en) * | 2013-06-18 | 2017-01-03 | Microsoft Technology Licensing, Llc | Methods and systems for electronic ink projection |
| JP6329843B2 (ja) | 2013-08-19 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9583063B2 (en) * | 2013-09-12 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2015075612A (ja) * | 2013-10-09 | 2015-04-20 | シナプティクス・ディスプレイ・デバイス株式会社 | 表示ドライバ |
| JP6294629B2 (ja) | 2013-10-11 | 2018-03-14 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
| CN103943061B (zh) | 2013-12-11 | 2016-08-17 | 上海天马微电子有限公司 | 一种内置触控结构的oled显示装置 |
| US9166775B2 (en) * | 2014-01-13 | 2015-10-20 | Hamilton Sundstrand Corporation | Cross-channel data communication with data phase-locked loop |
| JP6442321B2 (ja) | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
| KR102209512B1 (ko) * | 2014-06-30 | 2021-01-29 | 엘지전자 주식회사 | 글래스 타입 단말기 |
| US10319408B2 (en) | 2015-03-30 | 2019-06-11 | Manufacturing Resources International, Inc. | Monolithic display with separately controllable sections |
| US10922736B2 (en) | 2015-05-15 | 2021-02-16 | Manufacturing Resources International, Inc. | Smart electronic display for restaurants |
| CN104835470B (zh) * | 2015-05-26 | 2018-11-20 | 合肥京东方光电科技有限公司 | 显示基板驱动装置及驱动方法、显示设备 |
| KR102390093B1 (ko) * | 2015-05-28 | 2022-04-26 | 삼성디스플레이 주식회사 | 게이트 구동 회로 및 표시 장치 |
| US10269156B2 (en) | 2015-06-05 | 2019-04-23 | Manufacturing Resources International, Inc. | System and method for blending order confirmation over menu board background |
| US10288944B2 (en) * | 2015-07-02 | 2019-05-14 | Apple Inc. | Display border area with dual trench structures |
| JP6828247B2 (ja) * | 2016-02-19 | 2021-02-10 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
| JP6906978B2 (ja) | 2016-02-25 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、および電子機器 |
| US10319271B2 (en) | 2016-03-22 | 2019-06-11 | Manufacturing Resources International, Inc. | Cyclic redundancy check for electronic displays |
| AU2017273560B2 (en) | 2016-05-31 | 2019-10-03 | Manufacturing Resources International, Inc. | Electronic display remote image verification system and method |
| US10510304B2 (en) | 2016-08-10 | 2019-12-17 | Manufacturing Resources International, Inc. | Dynamic dimming LED backlight for LCD array |
| JP2018044976A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN107748461A (zh) * | 2017-11-28 | 2018-03-02 | 广东欧珀移动通信有限公司 | 显示屏组件、移动终端及显示屏组件加工方法 |
| KR102489597B1 (ko) * | 2017-12-27 | 2023-01-17 | 엘지디스플레이 주식회사 | 디스플레이 인터페이스 장치 |
| CN110299116B (zh) | 2018-03-23 | 2021-01-26 | 京东方科技集团股份有限公司 | 移位寄存器单元及驱动方法、栅极驱动电路、显示装置 |
| JP6702457B2 (ja) * | 2019-02-07 | 2020-06-03 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| US11908947B2 (en) * | 2019-08-08 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20230021586A1 (en) * | 2020-01-07 | 2023-01-26 | Ghsp, Inc. | Inductive cooktop display |
| CN111768742B (zh) * | 2020-07-17 | 2021-06-01 | 武汉华星光电技术有限公司 | 像素驱动电路及显示面板 |
| KR102850347B1 (ko) * | 2020-07-23 | 2025-08-28 | 삼성디스플레이 주식회사 | 데이터-스캔 통합 칩을 포함하는 표시 장치 |
| US11210986B1 (en) * | 2020-08-03 | 2021-12-28 | Novatek Microelectronics Corp. | Display driving apparatus and method |
| KR102809085B1 (ko) | 2021-04-13 | 2025-05-20 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 이용한 표시 패널의 구동 방법 |
| US11895362B2 (en) | 2021-10-29 | 2024-02-06 | Manufacturing Resources International, Inc. | Proof of play for images displayed at electronic displays |
| CN114596827B (zh) * | 2022-03-23 | 2022-10-28 | 惠科股份有限公司 | 显示面板的数据电压补偿方法、显示面板及显示装置 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04110994A (ja) * | 1990-08-31 | 1992-04-13 | Sanyo Electric Co Ltd | ドットマトリクス表示装置 |
| JPH05297827A (ja) * | 1992-04-17 | 1993-11-12 | Hitachi Ltd | 液晶表示装置 |
| US5828367A (en) * | 1993-10-21 | 1998-10-27 | Rohm Co., Ltd. | Display arrangement |
| TW475079B (en) * | 1994-05-24 | 2002-02-01 | Semiconductor Energy Lab | Liquid crystal display device |
| JP3593392B2 (ja) | 1995-09-27 | 2004-11-24 | 株式会社東芝 | 液晶表示装置 |
| JP3338259B2 (ja) * | 1995-12-05 | 2002-10-28 | 株式会社東芝 | 液晶表示装置 |
| JP3509398B2 (ja) | 1996-06-28 | 2004-03-22 | 富士通株式会社 | 画像表示方法及び装置 |
| JPH1090662A (ja) * | 1996-07-12 | 1998-04-10 | Tektronix Inc | プラズマ・アドレス液晶表示装置及びその表示パネルの動作方法 |
| JPH1195729A (ja) | 1997-09-24 | 1999-04-09 | Texas Instr Japan Ltd | 液晶ディスプレイ用信号線駆動回路 |
| JP3660126B2 (ja) | 1998-05-18 | 2005-06-15 | 株式会社ルネサステクノロジ | データ転送回路及び液晶表示装置 |
| JP2000194305A (ja) * | 1998-12-25 | 2000-07-14 | Fujitsu Ltd | 画像表示システム |
| JP2000227608A (ja) * | 1999-02-05 | 2000-08-15 | Hitachi Ltd | 液晶表示装置 |
| US6750835B2 (en) | 1999-12-27 | 2004-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Image display device and driving method thereof |
| JP4700190B2 (ja) | 1999-12-27 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 画像表示装置およびその駆動方法 |
| JP3835113B2 (ja) * | 2000-04-26 | 2006-10-18 | セイコーエプソン株式会社 | 電気光学パネルのデータ線駆動回路、その制御方法、電気光学装置、および電子機器 |
| JP3812340B2 (ja) * | 2001-01-15 | 2006-08-23 | 株式会社日立製作所 | 画像表示装置 |
| JP3862966B2 (ja) * | 2001-03-30 | 2006-12-27 | 株式会社日立製作所 | 画像表示装置 |
| JP4092132B2 (ja) * | 2002-04-26 | 2008-05-28 | Necエレクトロニクス株式会社 | 表示装置 |
| US8487859B2 (en) | 2002-12-30 | 2013-07-16 | Lg Display Co., Ltd. | Data driving apparatus and method for liquid crystal display device |
| TWI289821B (en) | 2003-02-10 | 2007-11-11 | Himax Tech Ltd | Data driver for liquid crystal display panel |
| JP2004341251A (ja) * | 2003-05-15 | 2004-12-02 | Renesas Technology Corp | 表示制御回路及び表示駆動回路 |
| JP3882796B2 (ja) * | 2003-07-22 | 2007-02-21 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法および電子機器 |
| AU2003261938A1 (en) | 2003-09-04 | 2005-03-29 | Fujitsu Limited | Information display system, display element, display element drive method, and display device |
| KR100965598B1 (ko) * | 2003-12-11 | 2010-06-23 | 엘지디스플레이 주식회사 | 액정표시장치의 구동장치 및 방법 |
| US8144100B2 (en) * | 2003-12-17 | 2012-03-27 | Samsung Electronics Co., Ltd. | Shared buffer display panel drive methods and systems |
| EP1544842B1 (en) * | 2003-12-18 | 2018-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP4807938B2 (ja) | 2004-05-14 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | コントローラドライバ及び表示装置 |
| US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| US8214819B2 (en) * | 2004-07-09 | 2012-07-03 | Hewlett-Packard Development Company, L.P. | Determining call counts in a program |
| JP4290627B2 (ja) * | 2004-10-04 | 2009-07-08 | シャープ株式会社 | 表示素子駆動装置及びその表示素子駆動装置を備えた表示装置並びに表示素子駆動方法 |
| TWI391887B (zh) * | 2004-11-24 | 2013-04-01 | Semiconductor Energy Lab | 顯示裝置和其驅動方法 |
| KR100639034B1 (ko) | 2005-03-09 | 2006-10-25 | 엘지전자 주식회사 | 플라즈마 디스플레이 패널의 멀티 스캔 장치 및 방법 |
| JP4246177B2 (ja) * | 2005-04-28 | 2009-04-02 | シャープ株式会社 | オフセット補正回路およびオペアンプ回路 |
| JP2007017647A (ja) * | 2005-07-07 | 2007-01-25 | Tohoku Pioneer Corp | 発光表示パネルの駆動装置および駆動方法 |
| KR20070052561A (ko) * | 2005-11-17 | 2007-05-22 | 삼성전자주식회사 | 영상처리장치 및 영상처리방법 |
| WO2007058248A1 (ja) * | 2005-11-18 | 2007-05-24 | Idemitsu Kosan Co., Ltd. | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
| TWI326441B (en) * | 2006-04-28 | 2010-06-21 | Chimei Innolux Corp | Driving device and driving method of liquid crystal panel |
-
2007
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2008
- 2008-01-10 US US11/972,159 patent/US8643583B2/en not_active Expired - Fee Related
- 2008-01-11 KR KR1020080003371A patent/KR101536102B1/ko not_active Expired - Fee Related
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11270615B2 (en) | 2019-08-08 | 2022-03-08 | Silicon Works Co., Ltd. | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140176405A1 (en) | 2014-06-26 |
| US8643583B2 (en) | 2014-02-04 |
| US9734802B2 (en) | 2017-08-15 |
| US20150340015A1 (en) | 2015-11-26 |
| KR101536102B1 (ko) | 2015-07-13 |
| JP2008170749A (ja) | 2008-07-24 |
| KR20080066605A (ko) | 2008-07-16 |
| US20080170028A1 (en) | 2008-07-17 |
| US9171492B2 (en) | 2015-10-27 |
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