JP5503466B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5503466B2
JP5503466B2 JP2010193161A JP2010193161A JP5503466B2 JP 5503466 B2 JP5503466 B2 JP 5503466B2 JP 2010193161 A JP2010193161 A JP 2010193161A JP 2010193161 A JP2010193161 A JP 2010193161A JP 5503466 B2 JP5503466 B2 JP 5503466B2
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Japan
Prior art keywords
chip mounting
wirings
chip
adhesive
wiring
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JP2010193161A
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English (en)
Japanese (ja)
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JP2012054264A (ja
JP2012054264A5 (https=
Inventor
宏 黒田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2010193161A priority Critical patent/JP5503466B2/ja
Priority to CN201110208148.0A priority patent/CN102386112B/zh
Priority to US13/196,171 priority patent/US8574963B2/en
Priority to KR1020110087423A priority patent/KR101811063B1/ko
Priority to TW100131360A priority patent/TWI525719B/zh
Publication of JP2012054264A publication Critical patent/JP2012054264A/ja
Publication of JP2012054264A5 publication Critical patent/JP2012054264A5/ja
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    • HELECTRICITY
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    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
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    • H10W72/251Materials
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JP2010193161A 2010-08-31 2010-08-31 半導体装置の製造方法 Active JP5503466B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010193161A JP5503466B2 (ja) 2010-08-31 2010-08-31 半導体装置の製造方法
CN201110208148.0A CN102386112B (zh) 2010-08-31 2011-07-20 半导体器件的制造方法
US13/196,171 US8574963B2 (en) 2010-08-31 2011-08-02 Method of manufacturing semiconductor device
KR1020110087423A KR101811063B1 (ko) 2010-08-31 2011-08-30 반도체 장치의 제조 방법
TW100131360A TWI525719B (zh) 2010-08-31 2011-08-31 Manufacturing method of semiconductor device

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JP2010193161A JP5503466B2 (ja) 2010-08-31 2010-08-31 半導体装置の製造方法

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JP2012054264A JP2012054264A (ja) 2012-03-15
JP2012054264A5 JP2012054264A5 (https=) 2013-06-06
JP5503466B2 true JP5503466B2 (ja) 2014-05-28

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US (1) US8574963B2 (https=)
JP (1) JP5503466B2 (https=)
KR (1) KR101811063B1 (https=)
CN (1) CN102386112B (https=)
TW (1) TWI525719B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5618873B2 (ja) 2011-03-15 2014-11-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6118652B2 (ja) * 2013-02-22 2017-04-19 ルネサスエレクトロニクス株式会社 半導体チップ及び半導体装置
DE112014003203B4 (de) * 2013-07-10 2019-08-01 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben
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