JP5496635B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5496635B2 JP5496635B2 JP2009284464A JP2009284464A JP5496635B2 JP 5496635 B2 JP5496635 B2 JP 5496635B2 JP 2009284464 A JP2009284464 A JP 2009284464A JP 2009284464 A JP2009284464 A JP 2009284464A JP 5496635 B2 JP5496635 B2 JP 5496635B2
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- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- forming
- gan
- semiconductor layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/477—Vertical HEMTs or vertical HHMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009284464A JP5496635B2 (ja) | 2008-12-19 | 2009-12-15 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008324798 | 2008-12-19 | ||
| JP2008324798 | 2008-12-19 | ||
| JP2009284464A JP5496635B2 (ja) | 2008-12-19 | 2009-12-15 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010166040A JP2010166040A (ja) | 2010-07-29 |
| JP2010166040A5 JP2010166040A5 (enExample) | 2011-12-01 |
| JP5496635B2 true JP5496635B2 (ja) | 2014-05-21 |
Family
ID=42266727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009284464A Active JP5496635B2 (ja) | 2008-12-19 | 2009-12-15 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8748274B2 (enExample) |
| JP (1) | JP5496635B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5506036B2 (ja) * | 2010-03-02 | 2014-05-28 | 古河電気工業株式会社 | 半導体トランジスタ |
| JP2012094688A (ja) * | 2010-10-27 | 2012-05-17 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP2012104568A (ja) * | 2010-11-08 | 2012-05-31 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| CN103229283B (zh) * | 2010-11-26 | 2016-01-20 | 富士通株式会社 | 半导体装置及半导体装置的制造方法 |
| JP5839804B2 (ja) * | 2011-01-25 | 2016-01-06 | 国立大学法人東北大学 | 半導体装置の製造方法、および半導体装置 |
| JP2012231003A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
| JP6132242B2 (ja) * | 2011-07-12 | 2017-05-24 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置およびその製造方法 |
| JP2013140866A (ja) | 2012-01-04 | 2013-07-18 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
| CN102709320B (zh) * | 2012-02-15 | 2014-09-24 | 中山大学 | 纵向导通的GaN基MISFET 器件及其制作方法 |
| JP6025242B2 (ja) * | 2012-03-30 | 2016-11-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP2014192493A (ja) | 2013-03-28 | 2014-10-06 | Toyoda Gosei Co Ltd | 半導体装置 |
| CN103311284B (zh) * | 2013-06-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体器件及其制作方法 |
| JP6197427B2 (ja) | 2013-07-17 | 2017-09-20 | 豊田合成株式会社 | ショットキーバリアダイオード |
| JP6241100B2 (ja) | 2013-07-17 | 2017-12-06 | 豊田合成株式会社 | Mosfet |
| WO2015166572A1 (ja) * | 2014-05-01 | 2015-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| CN106663634B (zh) * | 2015-03-30 | 2021-07-23 | 瑞萨电子株式会社 | 半导体器件及半导体器件的制造方法 |
| WO2017163881A1 (ja) * | 2016-03-23 | 2017-09-28 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6685890B2 (ja) * | 2016-12-19 | 2020-04-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN115810663A (zh) * | 2021-09-14 | 2023-03-17 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6909186B2 (en) * | 2003-05-01 | 2005-06-21 | International Business Machines Corporation | High performance FET devices and methods therefor |
| US20060102931A1 (en) * | 2004-11-17 | 2006-05-18 | Thomas Edward Kopley | Field effect transistor having a carrier exclusion layer |
| JP4916671B2 (ja) * | 2005-03-31 | 2012-04-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| JP2008016762A (ja) * | 2006-07-10 | 2008-01-24 | Oki Electric Ind Co Ltd | GaN−HEMTの製造方法 |
| JP2008072029A (ja) * | 2006-09-15 | 2008-03-27 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
| JP5311765B2 (ja) * | 2006-09-15 | 2013-10-09 | 住友化学株式会社 | 半導体エピタキシャル結晶基板およびその製造方法 |
| JP2008103408A (ja) * | 2006-10-17 | 2008-05-01 | Furukawa Electric Co Ltd:The | 窒化物化合物半導体トランジスタ及びその製造方法 |
| JP5186776B2 (ja) * | 2007-02-22 | 2013-04-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
| KR20100033467A (ko) * | 2007-03-15 | 2010-03-30 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 평판 디스플레이 제조를 위한 구리 상호접속 |
| US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
| JP5030172B2 (ja) * | 2008-06-09 | 2012-09-19 | 株式会社神戸製鋼所 | 絶縁膜及びその製造方法、並びに絶縁膜を備えた電子デバイス |
-
2009
- 2009-12-15 JP JP2009284464A patent/JP5496635B2/ja active Active
- 2009-12-17 US US12/640,347 patent/US8748274B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010166040A (ja) | 2010-07-29 |
| US8748274B2 (en) | 2014-06-10 |
| US20100159656A1 (en) | 2010-06-24 |
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