JP2010166040A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000001681 protective effect Effects 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000012670 alkaline solution Substances 0.000 claims abstract description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 15
- 230000003628 erosive effect Effects 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 8
- 239000000243 solution Substances 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 46
- 238000005530 etching Methods 0.000 description 33
- 238000000231 atomic layer deposition Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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Abstract
【解決手段】基板10上にGaN系半導体層15を形成する工程と、GaN系半導体層15上に酸化アルミニウムからなるゲート絶縁膜18を450℃以下の成膜温度で形成する工程と、ゲート絶縁膜18の上面に保護膜19を形成する工程、ゲート絶縁膜18を熱処理する工程、及びゲート絶縁膜18をプラズマ処理する工程のいずれか一つと、前記いずれか一つの工程の後に、ゲート絶縁膜18を形成する工程の後のアルカリ溶液を用いた処理を実行する工程と、前記ゲート絶縁膜18上にゲート電極を形成する工程と、を有することを特徴とする半導体装置の製造方法。
【選択図】図10
Description
12 GaN電子走行層
14 AlGaN電子供給層
15、52 GaN系半導体層
16 GaNキャップ層
18 ゲート絶縁膜
19 保護膜
20 ソース電極
22 ドレイン電極
24 ゲート電極
54 絶縁膜
56 電極
Claims (8)
- 基板上にGaN系半導体層を形成する工程と、
前記GaN系半導体層上に酸化アルミニウムからなるゲート絶縁膜を450℃以下の成膜温度で形成する工程と、
前記ゲート絶縁膜の上面に保護膜を形成する工程と、
前記ゲート絶縁膜の上面が前記保護膜に覆われた状態で、前記ゲート絶縁膜を形成する工程の後の最初のアルカリ溶液を用いた処理を実行する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記保護膜は、酸化シリコン、酸窒化シリコン、酸化ハフニウムまたは酸化ジルコニウムのいずれかからなることを特徴とする請求項1記載の半導体装置の製造方法。
- 基板上にGaN系半導体層を形成する工程と、
前記GaN系半導体層上に酸化アルミニウムからなるゲート絶縁膜を450℃以下の成膜温度で形成する工程と、
前記ゲート絶縁膜を前記ゲート絶縁膜の成膜温度以上の温度で熱処理する工程と、
前記熱処理する工程の後、前記ゲート絶縁膜を形成する工程の後の最初のアルカリ溶液を用いた処理を実行する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記熱処理する工程は、700℃以上で熱処理する工程であることを特徴とする請求項4記載の半導体装置の製造方法。
- 基板上にGaN系半導体層を形成する工程と、
前記GaN系半導体層上に酸化アルミニウムからなるゲート絶縁膜を450℃以下の成膜温度で形成する工程と、
前記ゲート絶縁膜をO2またはN2を用いプラズマ処理する工程と、
前記プラズマ処理する工程の後、前記ゲート絶縁膜を形成する工程の後の最初のアルカリ溶液を用いた処理を実行する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記ゲート絶縁膜は、ALD法、スパッタリング法またはCVD法のいずれかにより形成されることを特徴とする請求項1、3及び5のいずれか一項記載の半導体装置の製造方法。
- 前記GaN系半導体層上にソース電極及びドレイン電極を形成する工程を含むことを特徴とする請求項1から6いずれか一項記載の半導体装置の製造方法。
- 前記GaN系半導体層上にソース電極と、前記基板の前記GaN系半導体層が形成された面と前記基板を介して反対の面にドレイン電極とを形成する工程を含むことを特徴とする請求項1から6いずれか一項記載の半導体装置の製造方法。
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Cited By (9)
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WO2012070151A1 (ja) * | 2010-11-26 | 2012-05-31 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2012102237A1 (ja) * | 2011-01-25 | 2012-08-02 | 国立大学法人東北大学 | 半導体装置の製造方法、および半導体装置 |
JP2013140866A (ja) * | 2012-01-04 | 2013-07-18 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2013211461A (ja) * | 2012-03-30 | 2013-10-10 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
US9136367B2 (en) | 2013-07-17 | 2015-09-15 | Toyoda Gosei Co., Ltd. | Semiconductor device |
WO2015166572A1 (ja) * | 2014-05-01 | 2015-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
US9349668B2 (en) | 2013-07-17 | 2016-05-24 | Toyoda Gosei Co., Ltd. | Semiconductor device |
US9508822B2 (en) | 2013-03-28 | 2016-11-29 | Toyoda Gosei Co., Ltd. | Semiconductor device |
JPWO2016157371A1 (ja) * | 2015-03-30 | 2017-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
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JP5506036B2 (ja) | 2010-03-02 | 2014-05-28 | 古河電気工業株式会社 | 半導体トランジスタ |
JP2012094688A (ja) * | 2010-10-27 | 2012-05-17 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2012104568A (ja) * | 2010-11-08 | 2012-05-31 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2012231003A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
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CN102709320B (zh) * | 2012-02-15 | 2014-09-24 | 中山大学 | 纵向导通的GaN基MISFET 器件及其制作方法 |
CN103311284B (zh) * | 2013-06-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体器件及其制作方法 |
US10784350B2 (en) * | 2016-03-23 | 2020-09-22 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
JP6685890B2 (ja) * | 2016-12-19 | 2020-04-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN115810663A (zh) * | 2021-09-14 | 2023-03-17 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286942A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2008016762A (ja) * | 2006-07-10 | 2008-01-24 | Oki Electric Ind Co Ltd | GaN−HEMTの製造方法 |
JP2008072029A (ja) * | 2006-09-15 | 2008-03-27 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
JP2008098603A (ja) * | 2006-09-15 | 2008-04-24 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
JP2008103408A (ja) * | 2006-10-17 | 2008-05-01 | Furukawa Electric Co Ltd:The | 窒化物化合物半導体トランジスタ及びその製造方法 |
JP2008205392A (ja) * | 2007-02-22 | 2008-09-04 | Fujitsu Ltd | 半導体装置及びその製造方法 |
WO2008110216A1 (en) * | 2007-03-15 | 2008-09-18 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Copper interconnection for flat panel display manufacturing |
JP2008283202A (ja) * | 2008-06-09 | 2008-11-20 | Kobe Steel Ltd | 絶縁膜及びその製造方法、並びに絶縁膜を備えた電子デバイス |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6909186B2 (en) * | 2003-05-01 | 2005-06-21 | International Business Machines Corporation | High performance FET devices and methods therefor |
US20060102931A1 (en) * | 2004-11-17 | 2006-05-18 | Thomas Edward Kopley | Field effect transistor having a carrier exclusion layer |
US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
-
2009
- 2009-12-15 JP JP2009284464A patent/JP5496635B2/ja active Active
- 2009-12-17 US US12/640,347 patent/US8748274B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286942A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2008016762A (ja) * | 2006-07-10 | 2008-01-24 | Oki Electric Ind Co Ltd | GaN−HEMTの製造方法 |
JP2008072029A (ja) * | 2006-09-15 | 2008-03-27 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
JP2008098603A (ja) * | 2006-09-15 | 2008-04-24 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
JP2008103408A (ja) * | 2006-10-17 | 2008-05-01 | Furukawa Electric Co Ltd:The | 窒化物化合物半導体トランジスタ及びその製造方法 |
JP2008205392A (ja) * | 2007-02-22 | 2008-09-04 | Fujitsu Ltd | 半導体装置及びその製造方法 |
WO2008110216A1 (en) * | 2007-03-15 | 2008-09-18 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Copper interconnection for flat panel display manufacturing |
JP2008283202A (ja) * | 2008-06-09 | 2008-11-20 | Kobe Steel Ltd | 絶縁膜及びその製造方法、並びに絶縁膜を備えた電子デバイス |
Non-Patent Citations (2)
Title |
---|
JPN7013003234; Yuanzheng Yue他: 'AlGaN/GaN MOS-HEMT With HfO2 Dielectric and Al2O3' IEEE ELECTRON DEVICE LETTERS VOL.29,NO.8, 200808, 838-840, IEEE * |
JPN7013003235; P.D.Ye他: 'GaN metal-oxide-semiconductor high-electron-mobili' APPLIED PHYSICS LETTERS 86、063501, 2005, 1-3, American Institute of Phy * |
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WO2015166572A1 (ja) * | 2014-05-01 | 2015-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
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