JP2013211461A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2013211461A JP2013211461A JP2012081797A JP2012081797A JP2013211461A JP 2013211461 A JP2013211461 A JP 2013211461A JP 2012081797 A JP2012081797 A JP 2012081797A JP 2012081797 A JP2012081797 A JP 2012081797A JP 2013211461 A JP2013211461 A JP 2013211461A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000004767 nitrides Chemical class 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000005764 inhibitory process Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 95
- 239000007789 gas Substances 0.000 description 25
- 238000000231 atomic layer deposition Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 230000001629 suppression Effects 0.000 description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000010893 electron trap Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000002879 Lewis base Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 150000007527 lewis bases Chemical class 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005264 electron capture Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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Abstract
【解決手段】本発明は、キャップ層18上に、キャップ層18に接触し、窒素に対するシリコンの組成比が0.75より大きい窒化シリコン、酸素に対するシリコンの組成比が0.5より大きい酸化シリコン、及びアルミニウムのいずれかからなり、膜厚が1nm以上、5nm以下の第1膜34を設ける工程と、キャップ層18上に、ソース電極22、ゲート電極26及びドレイン電極24を設ける工程と、を有する半導体装置の製造方法である。
【選択図】図4
Description
12 バリア層
14 チャネル層
16 電子供給層
18 キャップ層
22 ソース電極
24 ドレイン電極
26 ゲート電極
30 層間絶縁膜
32 配線
34 第1膜
36 第2膜
Claims (5)
- 窒化物半導体層上に、前記窒化物半導体層に接触し、窒素に対するシリコンの組成比が0.75より大きい窒化シリコン、酸素に対するシリコンの組成比が0.5より大きい酸化シリコン、及びアルミニウムのいずれかからなり、膜厚が1nm以上、5nm以下の第1膜を設ける工程と、
前記窒化物半導体層上に、ソース電極、ゲート電極及びドレイン電極を設ける工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1膜上に第2膜を設ける工程を有し、
前記第2膜は窒化シリコン、酸化アルミニウム、及び窒化シリコンのいずれかかなり、実質的に化学量論組成を有することを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第1膜を設ける工程はALD法により前記第1膜を設ける工程であり、
前記第2膜を設ける工程はALD法により前記第2膜を設ける工程であることを特徴とする請求項2記載の半導体装置の製造方法。 - 前記第2膜の厚さは20nm以上、100nm以下であることを特徴とする請求項2又は3記載の半導体装置の製造方法。
- アルミニウムからなる前記第1膜を設ける工程と、前記第2膜を設ける工程とは連続して行われることを特徴とする請求項2から4いずれか一項記載の半導体装置の製造方法。
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JP2012081797A JP6025242B2 (ja) | 2012-03-30 | 2012-03-30 | 半導体装置の製造方法 |
US13/853,742 US20130260517A1 (en) | 2012-03-30 | 2013-03-29 | Method for fabricating semiconductor device |
US14/989,462 US9396928B2 (en) | 2012-03-30 | 2016-01-06 | Method for fabricating semiconductor device |
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JP2012081797A JP6025242B2 (ja) | 2012-03-30 | 2012-03-30 | 半導体装置の製造方法 |
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JP2013211461A true JP2013211461A (ja) | 2013-10-10 |
JP2013211461A5 JP2013211461A5 (ja) | 2015-05-14 |
JP6025242B2 JP6025242B2 (ja) | 2016-11-16 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016143843A (ja) * | 2015-02-04 | 2016-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2016143842A (ja) * | 2015-02-04 | 2016-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
WO2016151905A1 (ja) * | 2015-03-25 | 2016-09-29 | シャープ株式会社 | 窒化物半導体装置 |
JP2017063089A (ja) * | 2015-09-24 | 2017-03-30 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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CN108666216B (zh) * | 2018-05-15 | 2021-05-07 | 西安电子科技大学 | 基于叠层钝化结构的hemt器件及其制备方法 |
IT201800011065A1 (it) * | 2018-12-13 | 2020-06-13 | St Microelectronics Srl | Transistore hemt includente una regione di porta perfezionata e relativo procedimento di fabbricazione |
CN112382662B (zh) * | 2020-11-13 | 2022-06-21 | 宁波铼微半导体有限公司 | 氮化镓增强型器件及其制造方法 |
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US9396928B2 (en) | 2016-07-19 |
US20160118240A1 (en) | 2016-04-28 |
JP6025242B2 (ja) | 2016-11-16 |
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