JP5477670B2 - サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ - Google Patents

サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ Download PDF

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Publication number
JP5477670B2
JP5477670B2 JP2012041966A JP2012041966A JP5477670B2 JP 5477670 B2 JP5477670 B2 JP 5477670B2 JP 2012041966 A JP2012041966 A JP 2012041966A JP 2012041966 A JP2012041966 A JP 2012041966A JP 5477670 B2 JP5477670 B2 JP 5477670B2
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Japan
Prior art keywords
thermistor
film
metal nitride
nitride material
thin film
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JP2012041966A
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English (en)
Japanese (ja)
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JP2013179161A (ja
Inventor
利晃 藤田
寛 田中
均 稲場
和崇 藤原
憲昭 長友
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012041966A priority Critical patent/JP5477670B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to PCT/JP2013/055769 priority patent/WO2013129680A1/ja
Priority to CN201380004634.8A priority patent/CN104025211B/zh
Priority to IN7102DEN2014 priority patent/IN2014DN07102A/en
Priority to US14/380,997 priority patent/US9905341B2/en
Priority to KR1020147022802A priority patent/KR101872063B1/ko
Priority to EP13754162.9A priority patent/EP2822001B1/en
Priority to TW102106961A priority patent/TWI552173B/zh
Publication of JP2013179161A publication Critical patent/JP2013179161A/ja
Application granted granted Critical
Publication of JP5477670B2 publication Critical patent/JP5477670B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP2012041966A 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ Active JP5477670B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
CN201380004634.8A CN104025211B (zh) 2012-02-28 2013-02-26 热敏电阻用金属氮化物材料及其制造方法以及薄膜型热敏电阻传感器
IN7102DEN2014 IN2014DN07102A (enrdf_load_stackoverflow) 2012-02-28 2013-02-26
US14/380,997 US9905341B2 (en) 2012-02-28 2013-02-26 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
PCT/JP2013/055769 WO2013129680A1 (ja) 2012-02-28 2013-02-26 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
KR1020147022802A KR101872063B1 (ko) 2012-02-28 2013-02-26 서미스터용 금속 질화물 재료 및 그 제조 방법 그리고 필름형 서미스터 센서
EP13754162.9A EP2822001B1 (en) 2012-02-28 2013-02-26 Metal nitride material for thermistor, method for producing same, and film thermistor sensor
TW102106961A TWI552173B (zh) 2012-02-28 2013-02-27 Metal nitride material for thermistor and its manufacturing method and film type thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (2)

Publication Number Publication Date
JP2013179161A JP2013179161A (ja) 2013-09-09
JP5477670B2 true JP5477670B2 (ja) 2014-04-23

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JP2012041966A Active JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Country Status (8)

Country Link
US (1) US9905341B2 (enrdf_load_stackoverflow)
EP (1) EP2822001B1 (enrdf_load_stackoverflow)
JP (1) JP5477670B2 (enrdf_load_stackoverflow)
KR (1) KR101872063B1 (enrdf_load_stackoverflow)
CN (1) CN104025211B (enrdf_load_stackoverflow)
IN (1) IN2014DN07102A (enrdf_load_stackoverflow)
TW (1) TWI552173B (enrdf_load_stackoverflow)
WO (1) WO2013129680A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116550A (ja) * 2012-12-12 2014-06-26 Mitsubishi Materials Corp 温度センサ及びその製造方法並びにリードフレームの接続方法
JP2014119257A (ja) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp 気流センサ

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JP5871190B2 (ja) 2012-03-30 2016-03-01 三菱マテリアル株式会社 サーミスタ用金属窒化物膜及びその製造方法並びにフィルム型サーミスタセンサ
JP5896157B2 (ja) * 2012-09-06 2016-03-30 三菱マテリアル株式会社 温度センサ
JP5896160B2 (ja) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 温度センサ
JP6015425B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015424B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015423B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP5928831B2 (ja) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 温度センサ
JP6094422B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6094421B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6318915B2 (ja) * 2013-08-30 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6354947B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6355022B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319566B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319567B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6460376B2 (ja) * 2014-08-29 2019-01-30 三菱マテリアル株式会社 温度センサ及びその製造方法
WO2017047512A1 (ja) * 2015-09-16 2017-03-23 Ｓｅｍｉｔｅｃ株式会社 抵抗器及び温度センサ
JP2017134024A (ja) * 2016-01-29 2017-08-03 三菱マテリアル株式会社 温度センサ
JP6826313B2 (ja) * 2016-03-04 2021-02-03 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP2017163128A (ja) * 2016-03-04 2017-09-14 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP6819872B2 (ja) * 2017-03-23 2021-01-27 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP7234573B2 (ja) 2017-12-25 2023-03-08 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
WO2019131570A1 (ja) 2017-12-25 2019-07-04 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP2019129185A (ja) 2018-01-22 2019-08-01 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
CN113165979B (zh) 2018-12-28 2023-04-11 株式会社村田制作所 复合体以及使用该复合体的结构体和热敏电阻

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116550A (ja) * 2012-12-12 2014-06-26 Mitsubishi Materials Corp 温度センサ及びその製造方法並びにリードフレームの接続方法
JP2014119257A (ja) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp 気流センサ

Also Published As

Publication number Publication date
EP2822001A4 (en) 2016-02-10
TW201351450A (zh) 2013-12-16
KR20140136434A (ko) 2014-11-28
TWI552173B (zh) 2016-10-01
JP2013179161A (ja) 2013-09-09
WO2013129680A1 (ja) 2013-09-06
US20150036723A1 (en) 2015-02-05
CN104025211A (zh) 2014-09-03
IN2014DN07102A (enrdf_load_stackoverflow) 2015-04-24
CN104025211B (zh) 2016-11-09
EP2822001B1 (en) 2017-03-29
KR101872063B1 (ko) 2018-06-27
EP2822001A1 (en) 2015-01-07
US9905341B2 (en) 2018-02-27

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