TWI552173B - Metal nitride material for thermistor and its manufacturing method and film type thermistor - Google Patents

Metal nitride material for thermistor and its manufacturing method and film type thermistor Download PDF

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Publication number
TWI552173B
TWI552173B TW102106961A TW102106961A TWI552173B TW I552173 B TWI552173 B TW I552173B TW 102106961 A TW102106961 A TW 102106961A TW 102106961 A TW102106961 A TW 102106961A TW I552173 B TWI552173 B TW I552173B
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TW
Taiwan
Prior art keywords
thermistor
film
metal nitride
nitride material
type
Prior art date
Application number
TW102106961A
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English (en)
Chinese (zh)
Other versions
TW201351450A (zh
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Hitoshi Inaba
Kazutaka Fujiwara
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
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Publication date
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Publication of TW201351450A publication Critical patent/TW201351450A/zh
Application granted granted Critical
Publication of TWI552173B publication Critical patent/TWI552173B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
TW102106961A 2012-02-28 2013-02-27 Metal nitride material for thermistor and its manufacturing method and film type thermistor TWI552173B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (2)

Publication Number Publication Date
TW201351450A TW201351450A (zh) 2013-12-16
TWI552173B true TWI552173B (zh) 2016-10-01

Family

ID=49082865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102106961A TWI552173B (zh) 2012-02-28 2013-02-27 Metal nitride material for thermistor and its manufacturing method and film type thermistor

Country Status (8)

Country Link
US (1) US9905341B2 (enrdf_load_stackoverflow)
EP (1) EP2822001B1 (enrdf_load_stackoverflow)
JP (1) JP5477670B2 (enrdf_load_stackoverflow)
KR (1) KR101872063B1 (enrdf_load_stackoverflow)
CN (1) CN104025211B (enrdf_load_stackoverflow)
IN (1) IN2014DN07102A (enrdf_load_stackoverflow)
TW (1) TWI552173B (enrdf_load_stackoverflow)
WO (1) WO2013129680A1 (enrdf_load_stackoverflow)

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Publication number Priority date Publication date Assignee Title
JP5871190B2 (ja) 2012-03-30 2016-03-01 三菱マテリアル株式会社 サーミスタ用金属窒化物膜及びその製造方法並びにフィルム型サーミスタセンサ
JP5896157B2 (ja) * 2012-09-06 2016-03-30 三菱マテリアル株式会社 温度センサ
JP5896160B2 (ja) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 温度センサ
JP6111637B2 (ja) * 2012-12-12 2017-04-12 三菱マテリアル株式会社 温度センサ及びその製造方法
JP2014119257A (ja) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp 気流センサ
JP6015425B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015423B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015424B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP5928831B2 (ja) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 温度センサ
JP6094422B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6094421B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6318915B2 (ja) * 2013-08-30 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6354947B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6355022B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319567B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319566B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6460376B2 (ja) * 2014-08-29 2019-01-30 三菱マテリアル株式会社 温度センサ及びその製造方法
US10527501B2 (en) * 2015-09-16 2020-01-07 Semitec Corporation Resistor and temperature sensor
JP2017134024A (ja) * 2016-01-29 2017-08-03 三菱マテリアル株式会社 温度センサ
JP6826313B2 (ja) * 2016-03-04 2021-02-03 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP2017163128A (ja) * 2016-03-04 2017-09-14 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP6819872B2 (ja) * 2017-03-23 2021-01-27 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP7234573B2 (ja) 2017-12-25 2023-03-08 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
WO2019131570A1 (ja) 2017-12-25 2019-07-04 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP2019129185A (ja) 2018-01-22 2019-08-01 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
EP3854765B1 (en) 2018-12-28 2025-10-22 Murata Manufacturing Co., Ltd. Composite, and structure and thermistor using same

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JP2004319737A (ja) * 2003-04-16 2004-11-11 Osaka Prefecture サーミスタ用材料及びその製造方法

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JPH0590011A (ja) * 1991-09-26 1993-04-09 Anritsu Corp 感温抵抗体及びその製造方法
JP2004319737A (ja) * 2003-04-16 2004-11-11 Osaka Prefecture サーミスタ用材料及びその製造方法

Also Published As

Publication number Publication date
CN104025211A (zh) 2014-09-03
JP5477670B2 (ja) 2014-04-23
US9905341B2 (en) 2018-02-27
CN104025211B (zh) 2016-11-09
EP2822001A1 (en) 2015-01-07
EP2822001B1 (en) 2017-03-29
KR20140136434A (ko) 2014-11-28
JP2013179161A (ja) 2013-09-09
KR101872063B1 (ko) 2018-06-27
IN2014DN07102A (enrdf_load_stackoverflow) 2015-04-24
TW201351450A (zh) 2013-12-16
WO2013129680A1 (ja) 2013-09-06
US20150036723A1 (en) 2015-02-05
EP2822001A4 (en) 2016-02-10

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