TWI552173B - Metal nitride material for thermistor and its manufacturing method and film type thermistor - Google Patents

Metal nitride material for thermistor and its manufacturing method and film type thermistor Download PDF

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Publication number
TWI552173B
TWI552173B TW102106961A TW102106961A TWI552173B TW I552173 B TWI552173 B TW I552173B TW 102106961 A TW102106961 A TW 102106961A TW 102106961 A TW102106961 A TW 102106961A TW I552173 B TWI552173 B TW I552173B
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TW
Taiwan
Prior art keywords
thermistor
film
metal nitride
nitride material
type
Prior art date
Application number
TW102106961A
Other languages
English (en)
Chinese (zh)
Other versions
TW201351450A (zh
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Hitoshi Inaba
Kazutaka Fujiwara
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
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Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW201351450A publication Critical patent/TW201351450A/zh
Application granted granted Critical
Publication of TWI552173B publication Critical patent/TWI552173B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
TW102106961A 2012-02-28 2013-02-27 Metal nitride material for thermistor and its manufacturing method and film type thermistor TWI552173B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (2)

Publication Number Publication Date
TW201351450A TW201351450A (zh) 2013-12-16
TWI552173B true TWI552173B (zh) 2016-10-01

Family

ID=49082865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102106961A TWI552173B (zh) 2012-02-28 2013-02-27 Metal nitride material for thermistor and its manufacturing method and film type thermistor

Country Status (8)

Country Link
US (1) US9905341B2 (enrdf_load_stackoverflow)
EP (1) EP2822001B1 (enrdf_load_stackoverflow)
JP (1) JP5477670B2 (enrdf_load_stackoverflow)
KR (1) KR101872063B1 (enrdf_load_stackoverflow)
CN (1) CN104025211B (enrdf_load_stackoverflow)
IN (1) IN2014DN07102A (enrdf_load_stackoverflow)
TW (1) TWI552173B (enrdf_load_stackoverflow)
WO (1) WO2013129680A1 (enrdf_load_stackoverflow)

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JP5871190B2 (ja) * 2012-03-30 2016-03-01 三菱マテリアル株式会社 サーミスタ用金属窒化物膜及びその製造方法並びにフィルム型サーミスタセンサ
JP5896157B2 (ja) * 2012-09-06 2016-03-30 三菱マテリアル株式会社 温度センサ
JP5896160B2 (ja) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 温度センサ
JP6111637B2 (ja) * 2012-12-12 2017-04-12 三菱マテリアル株式会社 温度センサ及びその製造方法
JP2014119257A (ja) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp 気流センサ
JP6015424B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015423B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015425B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP5928831B2 (ja) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 温度センサ
JP6094422B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6094421B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6318915B2 (ja) * 2013-08-30 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6355022B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6354947B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319566B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319567B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6460376B2 (ja) * 2014-08-29 2019-01-30 三菱マテリアル株式会社 温度センサ及びその製造方法
WO2017047512A1 (ja) * 2015-09-16 2017-03-23 Ｓｅｍｉｔｅｃ株式会社 抵抗器及び温度センサ
JP2017134024A (ja) * 2016-01-29 2017-08-03 三菱マテリアル株式会社 温度センサ
JP6826313B2 (ja) * 2016-03-04 2021-02-03 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP2017163128A (ja) * 2016-03-04 2017-09-14 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP6819872B2 (ja) * 2017-03-23 2021-01-27 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
WO2019131570A1 (ja) 2017-12-25 2019-07-04 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP7234573B2 (ja) 2017-12-25 2023-03-08 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP2019129185A (ja) 2018-01-22 2019-08-01 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
EP3854765A4 (en) 2018-12-28 2022-07-13 Murata Manufacturing Co., Ltd. COMPOSITE, AND STRUCTURE AND THERMISTOR USING THE SAME

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JP2004319737A (ja) * 2003-04-16 2004-11-11 Osaka Prefecture サーミスタ用材料及びその製造方法

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Patent Citations (2)

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JPH0590011A (ja) * 1991-09-26 1993-04-09 Anritsu Corp 感温抵抗体及びその製造方法
JP2004319737A (ja) * 2003-04-16 2004-11-11 Osaka Prefecture サーミスタ用材料及びその製造方法

Also Published As

Publication number Publication date
TW201351450A (zh) 2013-12-16
KR101872063B1 (ko) 2018-06-27
CN104025211A (zh) 2014-09-03
EP2822001A1 (en) 2015-01-07
US9905341B2 (en) 2018-02-27
US20150036723A1 (en) 2015-02-05
EP2822001B1 (en) 2017-03-29
JP2013179161A (ja) 2013-09-09
JP5477670B2 (ja) 2014-04-23
IN2014DN07102A (enrdf_load_stackoverflow) 2015-04-24
WO2013129680A1 (ja) 2013-09-06
KR20140136434A (ko) 2014-11-28
CN104025211B (zh) 2016-11-09
EP2822001A4 (en) 2016-02-10

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