IN2014DN07102A - - Google Patents

Info

Publication number
IN2014DN07102A
IN2014DN07102A IN7102DEN2014A IN2014DN07102A IN 2014DN07102 A IN2014DN07102 A IN 2014DN07102A IN 7102DEN2014 A IN7102DEN2014 A IN 7102DEN2014A IN 2014DN07102 A IN2014DN07102 A IN 2014DN07102A
Authority
IN
India
Prior art keywords
metal nitride
thermistor
nitride material
film
tialn
Prior art date
Application number
Other languages
English (en)
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Hitoshi Inaba
Kazutaka Fujiwara
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN07102A publication Critical patent/IN2014DN07102A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
IN7102DEN2014 2012-02-28 2013-02-26 IN2014DN07102A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
PCT/JP2013/055769 WO2013129680A1 (ja) 2012-02-28 2013-02-26 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (1)

Publication Number Publication Date
IN2014DN07102A true IN2014DN07102A (enrdf_load_stackoverflow) 2015-04-24

Family

ID=49082865

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7102DEN2014 IN2014DN07102A (enrdf_load_stackoverflow) 2012-02-28 2013-02-26

Country Status (8)

Country Link
US (1) US9905341B2 (enrdf_load_stackoverflow)
EP (1) EP2822001B1 (enrdf_load_stackoverflow)
JP (1) JP5477670B2 (enrdf_load_stackoverflow)
KR (1) KR101872063B1 (enrdf_load_stackoverflow)
CN (1) CN104025211B (enrdf_load_stackoverflow)
IN (1) IN2014DN07102A (enrdf_load_stackoverflow)
TW (1) TWI552173B (enrdf_load_stackoverflow)
WO (1) WO2013129680A1 (enrdf_load_stackoverflow)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5871190B2 (ja) * 2012-03-30 2016-03-01 三菱マテリアル株式会社 サーミスタ用金属窒化物膜及びその製造方法並びにフィルム型サーミスタセンサ
JP5896157B2 (ja) * 2012-09-06 2016-03-30 三菱マテリアル株式会社 温度センサ
JP5896160B2 (ja) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 温度センサ
JP6111637B2 (ja) * 2012-12-12 2017-04-12 三菱マテリアル株式会社 温度センサ及びその製造方法
JP2014119257A (ja) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp 気流センサ
JP6015424B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015423B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6015425B2 (ja) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP5928831B2 (ja) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 温度センサ
JP6094422B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6094421B2 (ja) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 温度センサ
JP6318915B2 (ja) * 2013-08-30 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6355022B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6354947B2 (ja) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319566B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319567B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6460376B2 (ja) * 2014-08-29 2019-01-30 三菱マテリアル株式会社 温度センサ及びその製造方法
WO2017047512A1 (ja) * 2015-09-16 2017-03-23 Ｓｅｍｉｔｅｃ株式会社 抵抗器及び温度センサ
JP2017134024A (ja) * 2016-01-29 2017-08-03 三菱マテリアル株式会社 温度センサ
JP6826313B2 (ja) * 2016-03-04 2021-02-03 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP2017163128A (ja) * 2016-03-04 2017-09-14 三菱マテリアル株式会社 サーミスタ用金属窒化膜構造及びその製造方法並びにサーミスタセンサ
JP6819872B2 (ja) * 2017-03-23 2021-01-27 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
WO2019131570A1 (ja) 2017-12-25 2019-07-04 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP7234573B2 (ja) 2017-12-25 2023-03-08 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP2019129185A (ja) 2018-01-22 2019-08-01 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
EP3854765A4 (en) 2018-12-28 2022-07-13 Murata Manufacturing Co., Ltd. COMPOSITE, AND STRUCTURE AND THERMISTOR USING THE SAME

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142748B1 (enrdf_load_stackoverflow) * 1970-12-22 1976-11-17
JPS5110360B1 (enrdf_load_stackoverflow) * 1970-12-25 1976-04-03
JPS5110360A (ja) * 1974-07-02 1976-01-27 Fujitsu Ltd Magunetsuto
DE3207979A1 (de) * 1982-03-05 1983-09-08 Ernst Prof. Dr.-Ing. 7000 Stuttgart Lüder Duennschicht-widerstandsthermometer
JP2579470B2 (ja) * 1986-10-14 1997-02-05 株式会社富士通ゼネラル 窒化物の薄膜抵抗体製造方法
US5330853A (en) * 1991-03-16 1994-07-19 Leybold Ag Multilayer Ti-Al-N coating for tools
JPH0590011A (ja) * 1991-09-26 1993-04-09 Anritsu Corp 感温抵抗体及びその製造方法
JPH06158272A (ja) * 1992-11-17 1994-06-07 Ulvac Japan Ltd 抵抗膜および抵抗膜の製造方法
JP2003226573A (ja) 2002-02-01 2003-08-12 Mitsubishi Materials Corp 複合磁器材料およびｌｃ複合部品
SE523826C2 (sv) * 2002-03-20 2004-05-25 Seco Tools Ab Skär belagt med TiAIN för bearbetning med hög hastighet av legerade stål, sätt att framställa ett skär och användning av skäret
WO2003085152A2 (de) * 2002-04-11 2003-10-16 Cemecon Ag Beschichteter körper und ein verfahren zur beschichtung eines körpers
JP3862080B2 (ja) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 熱型赤外線検出器の製造方法
JP4436064B2 (ja) * 2003-04-16 2010-03-24 大阪府 サーミスタ用材料及びその製造方法
JP2006324520A (ja) 2005-05-19 2006-11-30 Mitsubishi Materials Corp サーミスタ薄膜及びその製造方法
US8277958B2 (en) * 2009-10-02 2012-10-02 Kennametal Inc. Aluminum titanium nitride coating and method of making same

Also Published As

Publication number Publication date
TW201351450A (zh) 2013-12-16
KR101872063B1 (ko) 2018-06-27
CN104025211A (zh) 2014-09-03
EP2822001A1 (en) 2015-01-07
US9905341B2 (en) 2018-02-27
US20150036723A1 (en) 2015-02-05
EP2822001B1 (en) 2017-03-29
JP2013179161A (ja) 2013-09-09
JP5477670B2 (ja) 2014-04-23
WO2013129680A1 (ja) 2013-09-06
KR20140136434A (ko) 2014-11-28
CN104025211B (zh) 2016-11-09
EP2822001A4 (en) 2016-02-10
TWI552173B (zh) 2016-10-01

Similar Documents

Publication Publication Date Title
IN2014DN07102A (enrdf_load_stackoverflow)
IN2014DN07101A (enrdf_load_stackoverflow)
MX370922B (es) Indicador de calor de función dual y método de fabricación.
EP2989429A4 (en) Sapphire sensor for measuring pressure and temperature
EP3546847A3 (en) Temperature sensor and fluid temperature controller
WO2012102523A3 (en) Thermoelectric device and thermoelectric module having the same, and method of manufacturing the same
EP2990424A4 (en) Polymerizable compound, polymerizable composition, and liquid crystal display element
PL2787093T3 (pl) Sposób wytwarzania proszku platynowego o wysokiej czystości, a także proszek platynowy możliwy do otrzymania zgodnie z tym sposobem oraz zastosowanie
MY205261A (en) Stable crystal form of tipiracil hydrochloride and crystallization method for the same
EP3467073A4 (en) TOOLS FOR SPONTANEOUS ALIGNMENT FOR LIQUID CRYSTAL COMPOSITION, FOR THE SAME TOOLS FOR SPONTANEOUS ALIGNMENT SUITABLE CONNECTION, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY ELEMENT
EP2833373A4 (en) THERMISTOR METAL NITRIDE FILM, MANUFACTURING METHOD THEREFOR, AND FILM TYPE THERMISTOR SENSOR
WO2014196827A3 (en) Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same
WO2011120637A3 (en) A method of stabilizing a blue phase liquid crystal composition
LT3052513T (lt) Gamybinis procesas, skirtas ulipristalio acetato ir jo 4'-acetilo analogo sintezei
MY160514A (en) Non-crystalline oxidized glutathione and production method therefore
TW201612134A (en) Mgo-based ceramic film, member for semiconductor production apparatus, and method for producing mgo-based ceramic film
TH151860A (enrdf_load_stackoverflow)
TH151859A (enrdf_load_stackoverflow)
PL396354A1 (pl) Sposób otrzymywania amorficznego indapamidu
RU2007137622A (ru) Способ хранения микобактерий лепры
WO2015082849A3 (fr) Nouveau procede de synthese du 7-methoxy-naphtalene-1-carbaldehyde et application a la synthese de l'agomelatine
UA102149C2 (ru) Устройство для измерения температуры
WO2015082848A3 (fr) Nouveau procede de synthese du 7-methoxy-naphtalene-1-carbaldehyde et application a la synthese de l'agomelatine
CN302080264S (zh) 分体式显示电能表表壳（kf06-10101）
UA56825U (ru) ТЕРМОЭЛЕКТРИЧЕСКИЙ МАТЕРИАЛ HA OCHOBE ЭВТЕКТИЧЕСКОГО КОМПОЗИТА СИСТЕМЫ Tl4SnSe4-Tl9BiSe6