WO2014196827A3 - Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same - Google Patents

Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same Download PDF

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Publication number
WO2014196827A3
WO2014196827A3 PCT/KR2014/005006 KR2014005006W WO2014196827A3 WO 2014196827 A3 WO2014196827 A3 WO 2014196827A3 KR 2014005006 W KR2014005006 W KR 2014005006W WO 2014196827 A3 WO2014196827 A3 WO 2014196827A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
silicon
film
amine compound
containing thin
Prior art date
Application number
PCT/KR2014/005006
Other languages
French (fr)
Other versions
WO2014196827A2 (en
Inventor
Se Jin Jang
Sang-Do Lee
Jun Hee Cho
Sung Gi Kim
Jong Hyun Kim
Byeong-Il Yang
Jang Hyeon Seok
Sang Ick Lee
Myong Woon Kim
Original Assignee
Dnf Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130159399A external-priority patent/KR101600337B1/en
Application filed by Dnf Co., Ltd. filed Critical Dnf Co., Ltd.
Priority to JP2016518275A priority Critical patent/JP6366698B2/en
Priority to US14/896,156 priority patent/US9586979B2/en
Priority to CN201480032373.5A priority patent/CN105377860B/en
Publication of WO2014196827A2 publication Critical patent/WO2014196827A2/en
Publication of WO2014196827A3 publication Critical patent/WO2014196827A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/10Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)

Abstract

Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film haying high purity and excellent physical and electrical properties by various deposition methods.
PCT/KR2014/005006 2013-06-07 2014-06-05 Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same WO2014196827A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016518275A JP6366698B2 (en) 2013-06-07 2014-06-05 Novel aminosilylamine compound, method for producing the same, and silicon-containing thin film using the same
US14/896,156 US9586979B2 (en) 2013-06-07 2014-06-05 Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
CN201480032373.5A CN105377860B (en) 2013-06-07 2014-06-05 New amino silane ylamine compounds, prepare its method and use its silicon-containing film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2013-0065399 2013-06-07
KR20130065399 2013-06-07
KR1020130159399A KR101600337B1 (en) 2013-06-07 2013-12-19 Novel amino-silyl amine compound, method for manufacturing thereof and silicon-containing thin film use the same
KR10-2013-0159399 2013-12-19

Publications (2)

Publication Number Publication Date
WO2014196827A2 WO2014196827A2 (en) 2014-12-11
WO2014196827A3 true WO2014196827A3 (en) 2015-04-23

Family

ID=52008679

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/005006 WO2014196827A2 (en) 2013-06-07 2014-06-05 Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same

Country Status (1)

Country Link
WO (1) WO2014196827A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3049499B1 (en) 2013-09-27 2020-07-22 L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
WO2018182318A1 (en) * 2017-03-29 2018-10-04 Dnf Co., Ltd. Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same
KR20180110612A (en) 2017-03-29 2018-10-10 (주)디엔에프 Compositions for depositing silicon-containing thin films containing bis(aminosilyl)alkylamine compound and methods for manufacturing silicon-containing thin film using the same
WO2018182305A1 (en) * 2017-03-29 2018-10-04 Dnf Co., Ltd. Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
KR102105977B1 (en) 2017-03-29 2020-05-04 (주)디엔에프 silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
WO2018182309A1 (en) * 2017-03-29 2018-10-04 Dnf Co., Ltd. Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110021130A (en) * 2009-08-25 2011-03-04 (주)디엔에프 Preparation of alkylaminosilane

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110021130A (en) * 2009-08-25 2011-03-04 (주)디엔에프 Preparation of alkylaminosilane

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BLASZCZYK LEZAK ET AL.: "Silicon carbonitride films produced by remote hydrogen microwave plasma CVD using a (dimethylamino) dimethylsilane precurs or", CHEMICAL VAPOR DEPOSITION, vol. 11, no. L, 2005, pages 44 - 52, XP001225058, DOI: doi:10.1002/cvde.200406316 *
U. WANNAGAT ET AL.: "Zur Umset zung yon metallierten (Di)Alkylaminosilylamin en mit Chlorsilanen", CHEMICAL MONTHLY, vol. 99, no. 4, pages 1376 - 1382 *

Also Published As

Publication number Publication date
WO2014196827A2 (en) 2014-12-11

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