IN2014DN07101A - - Google Patents

Info

Publication number
IN2014DN07101A
IN2014DN07101A IN7101DEN2014A IN2014DN07101A IN 2014DN07101 A IN2014DN07101 A IN 2014DN07101A IN 7101DEN2014 A IN7101DEN2014 A IN 7101DEN2014A IN 2014DN07101 A IN2014DN07101 A IN 2014DN07101A
Authority
IN
India
Prior art keywords
metal nitride
thermistor
nitride material
film
tial
Prior art date
Application number
Other languages
English (en)
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Hitoshi Inaba
Kazutaka Fujiwara
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN07101A publication Critical patent/IN2014DN07101A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Ceramic Products (AREA)
IN7101DEN2014 2012-02-28 2013-02-21 IN2014DN07101A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012041967A JP5477671B2 (ja) 2012-02-28 2012-02-28 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
PCT/JP2013/055601 WO2013129638A1 (ja) 2012-02-28 2013-02-21 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (1)

Publication Number Publication Date
IN2014DN07101A true IN2014DN07101A (enrdf_load_stackoverflow) 2015-04-24

Family

ID=49082825

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7101DEN2014 IN2014DN07101A (enrdf_load_stackoverflow) 2012-02-28 2013-02-21

Country Status (8)

Country Link
US (1) US9852829B2 (enrdf_load_stackoverflow)
EP (1) EP2822002B1 (enrdf_load_stackoverflow)
JP (1) JP5477671B2 (enrdf_load_stackoverflow)
KR (1) KR101871547B1 (enrdf_load_stackoverflow)
CN (1) CN104040647B (enrdf_load_stackoverflow)
IN (1) IN2014DN07101A (enrdf_load_stackoverflow)
TW (1) TWI564270B (enrdf_load_stackoverflow)
WO (1) WO2013129638A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11693009B2 (en) 2009-02-11 2023-07-04 Cedars-Sinai Medical Center Methods for detecting post-infectious irritable bowel syndrome
JP6115824B2 (ja) * 2013-09-06 2017-04-19 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにサーミスタセンサ
JP6115825B2 (ja) * 2013-09-06 2017-04-19 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにサーミスタセンサ
JP6115823B2 (ja) * 2013-09-06 2017-04-19 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6319568B2 (ja) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6394939B2 (ja) * 2014-05-16 2018-09-26 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにフィルム型サーミスタセンサ
RU2706361C2 (ru) 2014-10-09 2019-11-18 Седарс-Синаи Медикал Сентер Способы и системы для отличия синдрома раздраженного кишечника от воспалительного заболевания кишечника и глютеновой болезни
JP2016134491A (ja) * 2015-01-19 2016-07-25 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP6601614B2 (ja) * 2015-01-19 2019-11-06 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
JP2016134505A (ja) * 2015-01-20 2016-07-25 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142748B1 (enrdf_load_stackoverflow) * 1970-12-22 1976-11-17
JPS5110360B1 (enrdf_load_stackoverflow) * 1970-12-25 1976-04-03
DE3207979A1 (de) * 1982-03-05 1983-09-08 Ernst Prof. Dr.-Ing. 7000 Stuttgart Lüder Duennschicht-widerstandsthermometer
JP2579470B2 (ja) * 1986-10-14 1997-02-05 株式会社富士通ゼネラル 窒化物の薄膜抵抗体製造方法
JPH0590011A (ja) * 1991-09-26 1993-04-09 Anritsu Corp 感温抵抗体及びその製造方法
JPH06158272A (ja) * 1992-11-17 1994-06-07 Ulvac Japan Ltd 抵抗膜および抵抗膜の製造方法
US5367285A (en) * 1993-02-26 1994-11-22 Lake Shore Cryotronics, Inc. Metal oxy-nitride resistance films and methods of making the same
JP3473485B2 (ja) * 1999-04-08 2003-12-02 日本電気株式会社 薄膜抵抗体およびその製造方法
JP2003226573A (ja) 2002-02-01 2003-08-12 Mitsubishi Materials Corp 複合磁器材料およびｌｃ複合部品
SE523826C2 (sv) * 2002-03-20 2004-05-25 Seco Tools Ab Skär belagt med TiAIN för bearbetning med hög hastighet av legerade stål, sätt att framställa ett skär och användning av skäret
WO2003085152A2 (de) * 2002-04-11 2003-10-16 Cemecon Ag Beschichteter körper und ein verfahren zur beschichtung eines körpers
JP3862080B2 (ja) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 熱型赤外線検出器の製造方法
JP4436064B2 (ja) * 2003-04-16 2010-03-24 大阪府 サーミスタ用材料及びその製造方法
JP2006324520A (ja) 2005-05-19 2006-11-30 Mitsubishi Materials Corp サーミスタ薄膜及びその製造方法
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8277958B2 (en) * 2009-10-02 2012-10-02 Kennametal Inc. Aluminum titanium nitride coating and method of making same
WO2011102896A1 (en) 2010-02-17 2011-08-25 Tosoh Smd, Inc. Sputter target

Also Published As

Publication number Publication date
JP5477671B2 (ja) 2014-04-23
EP2822002A1 (en) 2015-01-07
EP2822002A4 (en) 2016-02-10
US9852829B2 (en) 2017-12-26
KR101871547B1 (ko) 2018-06-26
CN104040647A (zh) 2014-09-10
JP2013179162A (ja) 2013-09-09
US20150023394A1 (en) 2015-01-22
TWI564270B (zh) 2017-01-01
KR20140138658A (ko) 2014-12-04
WO2013129638A1 (ja) 2013-09-06
TW201345868A (zh) 2013-11-16
EP2822002B1 (en) 2017-03-29
CN104040647B (zh) 2017-03-08

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