CN104040647B - 热敏电阻用金属氮化物材料及其制造方法以及薄膜型热敏电阻传感器 - Google Patents
热敏电阻用金属氮化物材料及其制造方法以及薄膜型热敏电阻传感器 Download PDFInfo
- Publication number
- CN104040647B CN104040647B CN201380004775.XA CN201380004775A CN104040647B CN 104040647 B CN104040647 B CN 104040647B CN 201380004775 A CN201380004775 A CN 201380004775A CN 104040647 B CN104040647 B CN 104040647B
- Authority
- CN
- China
- Prior art keywords
- thermistor
- film
- metal nitride
- nitride materials
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 76
- 239000002184 metal Substances 0.000 title claims abstract description 76
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 113
- 239000010409 thin film Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000005546 reactive sputtering Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 claims description 9
- 230000008025 crystallization Effects 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 229910004349 Ti-Al Inorganic materials 0.000 claims description 7
- 229910004692 Ti—Al Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000005477 sputtering target Methods 0.000 claims description 6
- 238000010304 firing Methods 0.000 abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 39
- 229910052757 nitrogen Inorganic materials 0.000 description 21
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 17
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 229910018509 Al—N Inorganic materials 0.000 description 10
- 239000011780 sodium chloride Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910000238 buergerite Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 102000004895 Lipoproteins Human genes 0.000 description 1
- 108090001030 Lipoproteins Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001988 small-angle X-ray diffraction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-041967 | 2012-02-28 | ||
| JP2012041967A JP5477671B2 (ja) | 2012-02-28 | 2012-02-28 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
| PCT/JP2013/055601 WO2013129638A1 (ja) | 2012-02-28 | 2013-02-21 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104040647A CN104040647A (zh) | 2014-09-10 |
| CN104040647B true CN104040647B (zh) | 2017-03-08 |
Family
ID=49082825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380004775.XA Expired - Fee Related CN104040647B (zh) | 2012-02-28 | 2013-02-21 | 热敏电阻用金属氮化物材料及其制造方法以及薄膜型热敏电阻传感器 |
Country Status (8)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11693009B2 (en) | 2009-02-11 | 2023-07-04 | Cedars-Sinai Medical Center | Methods for detecting post-infectious irritable bowel syndrome |
| JP6115823B2 (ja) * | 2013-09-06 | 2017-04-19 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
| JP6115824B2 (ja) * | 2013-09-06 | 2017-04-19 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにサーミスタセンサ |
| JP6115825B2 (ja) * | 2013-09-06 | 2017-04-19 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにサーミスタセンサ |
| JP6394939B2 (ja) * | 2014-05-16 | 2018-09-26 | 三菱マテリアル株式会社 | サーミスタ及びその製造方法並びにフィルム型サーミスタセンサ |
| JP6319568B2 (ja) * | 2014-05-16 | 2018-05-09 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
| ES3028294T3 (en) | 2014-10-09 | 2025-06-18 | Cedars Sinai Medical Center | Methods and systems for distinguishing irritable bowel syndrome from inflammatory bowel disease and celiac disease |
| JP6601614B2 (ja) * | 2015-01-19 | 2019-11-06 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
| JP2016134491A (ja) * | 2015-01-19 | 2016-07-25 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
| JP2016134505A (ja) * | 2015-01-20 | 2016-07-25 | 三菱マテリアル株式会社 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396262A (ja) * | 1986-10-14 | 1988-04-27 | Fujitsu General Ltd | 窒化物の薄膜抵抗体製造方法 |
| JPH06158272A (ja) * | 1992-11-17 | 1994-06-07 | Ulvac Japan Ltd | 抵抗膜および抵抗膜の製造方法 |
| US6466124B1 (en) * | 1999-04-08 | 2002-10-15 | Nec Corporation | Thin film resistor and method for forming the same |
| JP2004319737A (ja) * | 2003-04-16 | 2004-11-11 | Osaka Prefecture | サーミスタ用材料及びその製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5142748B1 (enrdf_load_stackoverflow) * | 1970-12-22 | 1976-11-17 | ||
| JPS5110360B1 (enrdf_load_stackoverflow) * | 1970-12-25 | 1976-04-03 | ||
| DE3207979A1 (de) | 1982-03-05 | 1983-09-08 | Ernst Prof. Dr.-Ing. 7000 Stuttgart Lüder | Duennschicht-widerstandsthermometer |
| JPH0590011A (ja) * | 1991-09-26 | 1993-04-09 | Anritsu Corp | 感温抵抗体及びその製造方法 |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
| JP2003226573A (ja) | 2002-02-01 | 2003-08-12 | Mitsubishi Materials Corp | 複合磁器材料およびｌｃ複合部品 |
| SE523826C2 (sv) * | 2002-03-20 | 2004-05-25 | Seco Tools Ab | Skär belagt med TiAIN för bearbetning med hög hastighet av legerade stål, sätt att framställa ett skär och användning av skäret |
| AU2003227598A1 (en) * | 2002-04-11 | 2003-10-20 | Cemecon Ag | Coated bodies and a method for coating a body |
| JP3862080B2 (ja) * | 2002-11-01 | 2006-12-27 | 防衛庁技術研究本部長 | 熱型赤外線検出器の製造方法 |
| JP2006324520A (ja) | 2005-05-19 | 2006-11-30 | Mitsubishi Materials Corp | サーミスタ薄膜及びその製造方法 |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US8277958B2 (en) * | 2009-10-02 | 2012-10-02 | Kennametal Inc. | Aluminum titanium nitride coating and method of making same |
| TWI526558B (zh) | 2010-02-17 | 2016-03-21 | 塔沙Ｓｍｄ公司 | 具有改進的濺鍍板材料利用的濺鍍靶材設計 |
-
2012
- 2012-02-28 JP JP2012041967A patent/JP5477671B2/ja active Active
-
2013
- 2013-02-21 EP EP13754695.8A patent/EP2822002B1/en active Active
- 2013-02-21 US US14/380,791 patent/US9852829B2/en active Active
- 2013-02-21 KR KR1020147023893A patent/KR101871547B1/ko not_active Expired - Fee Related
- 2013-02-21 CN CN201380004775.XA patent/CN104040647B/zh not_active Expired - Fee Related
- 2013-02-21 IN IN7101DEN2014 patent/IN2014DN07101A/en unknown
- 2013-02-21 WO PCT/JP2013/055601 patent/WO2013129638A1/ja active Application Filing
- 2013-02-25 TW TW102106583A patent/TWI564270B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396262A (ja) * | 1986-10-14 | 1988-04-27 | Fujitsu General Ltd | 窒化物の薄膜抵抗体製造方法 |
| JPH06158272A (ja) * | 1992-11-17 | 1994-06-07 | Ulvac Japan Ltd | 抵抗膜および抵抗膜の製造方法 |
| US6466124B1 (en) * | 1999-04-08 | 2002-10-15 | Nec Corporation | Thin film resistor and method for forming the same |
| JP2004319737A (ja) * | 2003-04-16 | 2004-11-11 | Osaka Prefecture | サーミスタ用材料及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IN2014DN07101A (enrdf_load_stackoverflow) | 2015-04-24 |
| US20150023394A1 (en) | 2015-01-22 |
| WO2013129638A1 (ja) | 2013-09-06 |
| CN104040647A (zh) | 2014-09-10 |
| TW201345868A (zh) | 2013-11-16 |
| KR101871547B1 (ko) | 2018-06-26 |
| EP2822002B1 (en) | 2017-03-29 |
| US9852829B2 (en) | 2017-12-26 |
| EP2822002A4 (en) | 2016-02-10 |
| EP2822002A1 (en) | 2015-01-07 |
| KR20140138658A (ko) | 2014-12-04 |
| TWI564270B (zh) | 2017-01-01 |
| JP5477671B2 (ja) | 2014-04-23 |
| JP2013179162A (ja) | 2013-09-09 |
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