IN2014DN07102A - - Google Patents

Info

Publication number
IN2014DN07102A
IN2014DN07102A IN7102DEN2014A IN2014DN07102A IN 2014DN07102 A IN2014DN07102 A IN 2014DN07102A IN 7102DEN2014 A IN7102DEN2014 A IN 7102DEN2014A IN 2014DN07102 A IN2014DN07102 A IN 2014DN07102A
Authority
IN
India
Prior art keywords
metal nitride
thermistor
nitride material
film
tialn
Prior art date
Application number
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Hitoshi Inaba
Kazutaka Fujiwara
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN07102A publication Critical patent/IN2014DN07102A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PROVIDED ARE: A METAL NITRIDE MATERIAL THAT IS FOR A THERMISTOR AND THAT HAS HIGH RELIABILITY AND HIGH HEAT RESISTANCE AND CAN BE DIRECTLY FORMED WITHOUT FIRING INTO A FILM OR THE LIKE; A METHOD FOR PRODUCING THE METAL NITRIDE MATERIAL FOR A THERMISTOR; AND A FILM THERMISTOR SENSOR. THE METAL NITRIDE MATERIAL USED IN A THERMISTOR COMPRISES A METAL NITRIDE REPRESENTED BY THE GENERAL FORMULA TIALN (WHERE 0.70 = Y/(X+Y) = 0.95 0.4 = Z = 0.5 AND X+Y+Z = 1) THE CRYSTAL STRUCTURE THEREOF BEING A SINGLE PHASE OF HEXAGONAL WURTZITE.
IN7102DEN2014 2012-02-28 2013-02-26 IN2014DN07102A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012041966A JP5477670B2 (en) 2012-02-28 2012-02-28 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
PCT/JP2013/055769 WO2013129680A1 (en) 2012-02-28 2013-02-26 Metal nitride material for thermistor, method for producing same, and film thermistor sensor

Publications (1)

Publication Number Publication Date
IN2014DN07102A true IN2014DN07102A (en) 2015-04-24

Family

ID=49082865

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7102DEN2014 IN2014DN07102A (en) 2012-02-28 2013-02-26

Country Status (8)

Country Link
US (1) US9905341B2 (en)
EP (1) EP2822001B1 (en)
JP (1) JP5477670B2 (en)
KR (1) KR101872063B1 (en)
CN (1) CN104025211B (en)
IN (1) IN2014DN07102A (en)
TW (1) TWI552173B (en)
WO (1) WO2013129680A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5871190B2 (en) * 2012-03-30 2016-03-01 三菱マテリアル株式会社 Metal nitride film for thermistor, method for producing the same, and film type thermistor sensor
JP5896157B2 (en) * 2012-09-06 2016-03-30 三菱マテリアル株式会社 Temperature sensor
JP5896160B2 (en) * 2012-09-28 2016-03-30 三菱マテリアル株式会社 Temperature sensor
JP6111637B2 (en) * 2012-12-12 2017-04-12 三菱マテリアル株式会社 Temperature sensor and manufacturing method thereof
JP2014119257A (en) * 2012-12-13 2014-06-30 Mitsubishi Materials Corp Air flow sensor
JP6015425B2 (en) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6015424B2 (en) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6015423B2 (en) * 2012-12-21 2016-10-26 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP5928831B2 (en) * 2013-03-21 2016-06-01 三菱マテリアル株式会社 Temperature sensor
JP6094422B2 (en) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 Temperature sensor
JP6094421B2 (en) * 2013-08-09 2017-03-15 三菱マテリアル株式会社 Temperature sensor
JP6354947B2 (en) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6318915B2 (en) * 2013-08-30 2018-05-09 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6355022B2 (en) * 2013-08-30 2018-07-11 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6319566B2 (en) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6319567B2 (en) * 2014-05-16 2018-05-09 三菱マテリアル株式会社 Metal nitride material for thermistor, manufacturing method thereof, and film type thermistor sensor
JP6460376B2 (en) * 2014-08-29 2019-01-30 三菱マテリアル株式会社 Temperature sensor and manufacturing method thereof
WO2017047512A1 (en) * 2015-09-16 2017-03-23 Ｓｅｍｉｔｅｃ株式会社 Resistor and temperature sensor
JP2017134024A (en) * 2016-01-29 2017-08-03 三菱マテリアル株式会社 Temperature sensor
JP6819872B2 (en) * 2017-03-23 2021-01-27 三菱マテリアル株式会社 Thermistor and its manufacturing method and thermistor sensor
JP7234573B2 (en) 2017-12-25 2023-03-08 三菱マテリアル株式会社 THERMISTOR AND MANUFACTURING METHOD THEREOF AND THERMISTOR SENSOR
WO2019131570A1 (en) 2017-12-25 2019-07-04 三菱マテリアル株式会社 Thermistor, method for manufacturing same, and thermistor sensor
JP2019129185A (en) 2018-01-22 2019-08-01 三菱マテリアル株式会社 Thermistor, method for manufacturing the same, and thermistor sensor
EP3854765A4 (en) 2018-12-28 2022-07-13 Murata Manufacturing Co., Ltd. Composite, and structure and thermistor using same

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JP2579470B2 (en) * 1986-10-14 1997-02-05 株式会社富士通ゼネラル Method of manufacturing nitride thin film resistor
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JPH0590011A (en) * 1991-09-26 1993-04-09 Anritsu Corp Thermosensitive resistor and its manufacture
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JP2003226573A (en) 2002-02-01 2003-08-12 Mitsubishi Materials Corp Composite ceramic material and lc composite part
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AU2003227598A1 (en) * 2002-04-11 2003-10-20 Cemecon Ag Coated bodies and a method for coating a body
JP3862080B2 (en) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 Method for manufacturing thermal infrared detector
JP4436064B2 (en) * 2003-04-16 2010-03-24 大阪府 Thermistor material and manufacturing method thereof
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US8277958B2 (en) * 2009-10-02 2012-10-02 Kennametal Inc. Aluminum titanium nitride coating and method of making same

Also Published As

Publication number Publication date
US20150036723A1 (en) 2015-02-05
CN104025211B (en) 2016-11-09
EP2822001B1 (en) 2017-03-29
US9905341B2 (en) 2018-02-27
CN104025211A (en) 2014-09-03
TWI552173B (en) 2016-10-01
EP2822001A4 (en) 2016-02-10
JP2013179161A (en) 2013-09-09
JP5477670B2 (en) 2014-04-23
KR20140136434A (en) 2014-11-28
EP2822001A1 (en) 2015-01-07
KR101872063B1 (en) 2018-06-27
TW201351450A (en) 2013-12-16
WO2013129680A1 (en) 2013-09-06

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