JP5467799B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5467799B2
JP5467799B2 JP2009117689A JP2009117689A JP5467799B2 JP 5467799 B2 JP5467799 B2 JP 5467799B2 JP 2009117689 A JP2009117689 A JP 2009117689A JP 2009117689 A JP2009117689 A JP 2009117689A JP 5467799 B2 JP5467799 B2 JP 5467799B2
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Japan
Prior art keywords
lead
conductive material
semiconductor
semiconductor chip
chip
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JP2009117689A
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English (en)
Japanese (ja)
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JP2010267789A5 (enExample
JP2010267789A (ja
Inventor
孝光 金澤
俊幸 波多
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009117689A priority Critical patent/JP5467799B2/ja
Priority to US12/776,376 priority patent/US8222651B2/en
Publication of JP2010267789A publication Critical patent/JP2010267789A/ja
Publication of JP2010267789A5 publication Critical patent/JP2010267789A5/ja
Priority to US13/533,947 priority patent/US8629467B2/en
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Publication of JP5467799B2 publication Critical patent/JP5467799B2/ja
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JP2009117689A 2009-05-14 2009-05-14 半導体装置 Active JP5467799B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009117689A JP5467799B2 (ja) 2009-05-14 2009-05-14 半導体装置
US12/776,376 US8222651B2 (en) 2009-05-14 2010-05-08 Semiconductor device
US13/533,947 US8629467B2 (en) 2009-05-14 2012-06-26 Semiconductor device

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Application Number Priority Date Filing Date Title
JP2009117689A JP5467799B2 (ja) 2009-05-14 2009-05-14 半導体装置

Publications (3)

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JP2010267789A JP2010267789A (ja) 2010-11-25
JP2010267789A5 JP2010267789A5 (enExample) 2012-04-05
JP5467799B2 true JP5467799B2 (ja) 2014-04-09

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US (2) US8222651B2 (enExample)
JP (1) JP5467799B2 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5467799B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP5921055B2 (ja) * 2010-03-08 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
US8324025B2 (en) * 2010-04-22 2012-12-04 Team Pacific Corporation Power semiconductor device packaging
JP2012015202A (ja) * 2010-06-29 2012-01-19 On Semiconductor Trading Ltd 半導体装置およびその製造方法
CN102456824A (zh) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构
KR101278393B1 (ko) * 2010-11-01 2013-06-24 삼성전기주식회사 파워 패키지 모듈 및 그의 제조방법
JP5578326B2 (ja) * 2011-03-29 2014-08-27 日立金属株式会社 リード部品及びその製造方法、並びに半導体パッケージ
WO2012137439A1 (ja) 2011-04-05 2012-10-11 パナソニック株式会社 封止型半導体装置及びその製造方法
WO2012137333A1 (ja) 2011-04-07 2012-10-11 三菱電機株式会社 モールドモジュール、及び電動パワーステアリング装置
EP2701192B1 (en) * 2011-04-18 2017-11-01 Mitsubishi Electric Corporation Semiconductor device, inverter device provided with semiconductor device, and in-vehicle rotating electrical machine provided with semiconductor device and inverter device
EP2765600A4 (en) * 2011-09-30 2015-06-10 Rohm Co Ltd SEMICONDUCTOR COMPONENT
CN103988295B (zh) * 2011-12-21 2016-08-17 南京皓赛米电力科技有限公司 用于高功率电子元件封装含微通道的引线框架焊盘及封装结构和工艺
WO2013091141A1 (zh) * 2011-12-21 2013-06-27 武汉飞恩微电子有限公司 功率器件封装结构及封装工艺
CN102623618A (zh) * 2012-04-12 2012-08-01 深圳雷曼光电科技股份有限公司 双打反线弧式led封装结构及其封装工艺
US8766430B2 (en) 2012-06-14 2014-07-01 Infineon Technologies Ag Semiconductor modules and methods of formation thereof
JP5961529B2 (ja) * 2012-11-01 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置
KR20150002077A (ko) * 2013-06-28 2015-01-07 삼성전자주식회사 파워 반도체 모듈
WO2015001676A1 (ja) * 2013-07-05 2015-01-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6114134B2 (ja) * 2013-07-29 2017-04-12 トヨタ自動車株式会社 リードフレーム、電力変換装置、半導体装置及び半導体装置の製造方法
US9041460B2 (en) 2013-08-12 2015-05-26 Infineon Technologies Ag Packaged power transistors and power packages
JP6114149B2 (ja) * 2013-09-05 2017-04-12 トヨタ自動車株式会社 半導体装置
JP6072667B2 (ja) * 2013-11-12 2017-02-01 三菱電機株式会社 半導体モジュールとその製造方法
WO2016048676A1 (en) * 2014-09-24 2016-03-31 Hiq Solar, Inc. Transistor thermal and emi management solution for fast edge rate environment
WO2016084180A1 (ja) 2014-11-27 2016-06-02 三菱電機株式会社 半導体モジュールおよび半導体駆動装置
JP6345583B2 (ja) * 2014-12-03 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6365322B2 (ja) * 2015-01-23 2018-08-01 三菱電機株式会社 半導体装置
US9911712B2 (en) * 2015-10-26 2018-03-06 Semiconductor Components Industries, Llc Clip and related methods
JP6577857B2 (ja) 2015-12-21 2019-09-18 ルネサスエレクトロニクス株式会社 半導体装置
JP6477567B2 (ja) * 2016-03-30 2019-03-06 株式会社オートネットワーク技術研究所 回路構成体
JP6973730B2 (ja) * 2016-07-08 2021-12-01 ローム株式会社 半導体装置の製造方法および半導体装置
JP6607571B2 (ja) * 2016-07-28 2019-11-20 株式会社東海理化電機製作所 半導体装置の製造方法
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP6645396B2 (ja) * 2016-10-07 2020-02-14 株式会社デンソー 半導体装置
US10262928B2 (en) * 2017-03-23 2019-04-16 Rohm Co., Ltd. Semiconductor device
DE112018002101B4 (de) * 2017-04-19 2025-11-13 Mitsubishi Electric Corporation Halbleitermodul und Leistungswandlergerät
WO2018237199A1 (en) 2017-06-22 2018-12-27 Renesas Electronics America Inc. SOLID TOP TERMINAL FOR DISCRETE FEED DEVICES
WO2019049213A1 (ja) * 2017-09-05 2019-03-14 新電元工業株式会社 半導体装置
CN111295751B (zh) * 2017-11-10 2023-09-15 新电元工业株式会社 电子模块
CN111279471B (zh) * 2017-11-10 2023-09-15 新电元工业株式会社 电子模块
CN111406311A (zh) * 2017-11-10 2020-07-10 新电元工业株式会社 电子模块以及电子模块的制造方法
JP7001503B2 (ja) * 2018-01-15 2022-01-19 ローム株式会社 半導体装置、および半導体装置の製造方法
KR102172689B1 (ko) * 2020-02-07 2020-11-02 제엠제코(주) 반도체 패키지 및 그 제조방법
CN113496955A (zh) * 2020-04-01 2021-10-12 上海凯虹科技电子有限公司 一种塑封模具
JPWO2021261508A1 (enExample) * 2020-06-23 2021-12-30
JP7686645B2 (ja) * 2020-07-13 2025-06-02 ローム株式会社 半導体装置、および半導体装置の製造方法
DE112021002829T5 (de) * 2020-07-16 2023-03-02 Rohm Co., Ltd. Halbleiterbauteil und Verfahren zum Herstellen eines Halbleiterbauteils
JP7897479B2 (ja) * 2022-05-23 2026-07-30 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
JP7875037B2 (ja) * 2022-06-08 2026-06-17 株式会社東芝 半導体装置及び半導体装置の製造方法
CN115101423A (zh) * 2022-08-19 2022-09-23 泸州龙芯微科技有限公司 一种igbt的封装方法以及封装结构
JP2026049044A (ja) * 2023-01-26 2026-03-18 住友電気工業株式会社 半導体装置
JP7843721B2 (ja) * 2023-02-08 2026-04-10 三菱電機株式会社 半導体装置
DE102023203781A1 (de) * 2023-04-25 2024-10-31 Zf Friedrichshafen Ag Halbleitereinrichtung, Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitereinrichtung
WO2025033099A1 (ja) * 2023-08-04 2025-02-13 ローム株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049184A (ja) * 1998-05-27 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
JP3612226B2 (ja) * 1998-12-21 2005-01-19 株式会社東芝 半導体装置及び半導体モジュール
JP2001351929A (ja) * 2000-06-09 2001-12-21 Hitachi Ltd 半導体装置およびその製造方法
JP3602453B2 (ja) * 2000-08-31 2004-12-15 Necエレクトロニクス株式会社 半導体装置
JP2003110077A (ja) * 2001-10-02 2003-04-11 Mitsubishi Electric Corp 半導体装置
JP4248953B2 (ja) * 2003-06-30 2009-04-02 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP2005243685A (ja) 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置
JP2007012857A (ja) * 2005-06-30 2007-01-18 Renesas Technology Corp 半導体装置
JP4471967B2 (ja) * 2006-12-28 2010-06-02 株式会社ルネサステクノロジ 双方向スイッチモジュール
JP5467799B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置

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