KR20150002077A - 파워 반도체 모듈 - Google Patents

파워 반도체 모듈 Download PDF

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Publication number
KR20150002077A
KR20150002077A KR1020130075413A KR20130075413A KR20150002077A KR 20150002077 A KR20150002077 A KR 20150002077A KR 1020130075413 A KR1020130075413 A KR 1020130075413A KR 20130075413 A KR20130075413 A KR 20130075413A KR 20150002077 A KR20150002077 A KR 20150002077A
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KR
South Korea
Prior art keywords
layer
electrode
power
nickel plated
copper wire
Prior art date
Application number
KR1020130075413A
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English (en)
Inventor
이백우
부성운
Original Assignee
삼성전자주식회사
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020130075413A priority Critical patent/KR20150002077A/ko
Priority to US14/087,472 priority patent/US20150001726A1/en
Publication of KR20150002077A publication Critical patent/KR20150002077A/ko

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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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Abstract

파워 반도체 모듈이 개시된다. 개시된 파워 반도체 모듈은 기판 상의 적어도 하나의 파워 소자와, 상기 파워소자의 상면의 적어도 하나의 전극과, 상기 전극 상의 니켈 도금층과, 상기 니켈 도금층에 일단이 연결되는 구리 와이어를 포함한다. 상기 파워 소자의 측면에는 상기 측면을 둘러싸는 보호층이 형성될 수 있다.

Description

파워 반도체 모듈{Power semiconductor module}
구리 와이어본딩을 위해 전극 보강 니켈도금층을 포함하는 파워 반도체 모듈에 관한 것이다.
산업용 모터나 자동차용 모터 등의 인버터 회로, 대용량 서버의 전원장치, 및 무정전 전원장치 등에 있어서, 비교적 큰 전력을 취급하기 위해 수백 킬로와트(KW)로부터 수 메가와트(MW)까지의 파워 반도체 소자가 사용된다. 이 파워 반도체 소자로서는, 예를 들면 MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor) 및 IGBT(Insulated Gate Bipolar Transistor) 등의 반도체 스위치가 있다.
파워모듈은 기판에 부착된 파워소자를 포함하며, 파워소자는 다른 소자 또는 기판 상의 패드와 전기적으로 연결된다.
파워모듈의 전기적 연결은, 파워 소자 (IGBT or MOSFET, diode)-파워소자, 파워소자-기판 등의 전기적 연결 (electrical interconnection)을 포함하며, 기존의 가장 보편적인 기술은 알루미늄 와이어본딩이다.
최근의 파워모듈은 보다 작은 사이즈에서 더 높은 전류의 파워소자를 사용함에 따라 파워모듈의 파워밀도가 계속 증가되고 있으며, 이에 따라 많은 열이 방출되고 있다. 아울러, 고온에서 동작하는 GaN, SiC와 같은 파워소자로 구성되는 파워모듈이 많은 주목을 받고 있다. 이러한 고파워 밀도, 고온동작의 파워모듈 트렌드 변화에 부응하도록, 파워소자-파워소자, 파워소자-기판을 전기적으로 연결하는 인터커넥션 또한 고온 동작이 가능하도록 하는 연구가 필요하다. 파워모듈의 가장 보편적인 Al 와이어본딩의 경우 Al의 녹는점이 660℃로, 동작온도 200℃에서 homologous temperature는 creep에 민감하게 되는 0.5에 해당한다.
본 개시는 종래의 알루미늄 와이어 대신에 녹는 점이 높은 구리 와이어로 대체시 전극의 강도를 보강한 니켈 도금층을 포함하며, 고온 동작이 가능한 파워 반도체 모듈을 제공한다.
일 실시예에 따른 파워 반도체 모듈은:
기판 상의 적어도 하나의 파워 소자;
상기 파워소자의 상면의 적어도 하나의 전극;
상기 전극 상의 니켈 도금층; 및
상기 니켈 도금층에 연결되는 구리 와이어;를 포함한다.
상기 전극은 알루미늄 또는 알루미늄 합금으로 이루어진 파워 반도체 모듈
상기 기판 상에서 상기 파워소자와 이격된 전극패드를 더 구비하며, 상기 구리 와이어는 상기 전극 패드와 연결될 수 있다.
상기 기판은 DBC(direct bonded copper) 기판, 리드프레임 기판, 인쇄회로 기판 중 하나일 수 있다.
상기 파워소자는 절연 게이트 이극성 트랜지스터(insulated gate bipolar transistor: IGBT), 모스페트(MOSFET), 다이오드 중 적어도 하나를 포함할 수 있다.
일 국면에 따르면, 상기 파워소자는 절연 게이트 이극성 트랜지스터(insulated gate bipolar transistor: IGBT), 모스페트(MOSFET), 다이오드 중 서로 다른 두 개의 파워소자를 포함하며,
상기 구리 와이어는 상기 서로 다른 두 개의 파워소자의 각각의 상면에 형성된 전극 위의 니켈도금층을 연결한다.
상기 니켈 도금층은 3~30㎛ 두께를 가질 수 있다.
상기 니켈 도금층은 인 또는 보론을 포함할 수 있다.
상기 니켈 도금층은 나노 그레인 또는 비정질(amorphous) 층으로 형성된 것일 수 있다.
상기 파워 반도체 모듈은 상기 파워 소자의 측면을 둘러싸는 보호층을 더 포함할 수 있다.
상기 보호층은 폴리머 레지스트, 실리콘 옥사이드, 실리콘 나이트라이드를 포함할 수 있다.
상기 구리 와이어는 100~500㎛ 직경을 가질 수 있다.
상기 구리 와이어는 상기 니켈 도금층에 웨지 본딩으로 연결되어 상기 니켈 도금층과 선접촉을 할 수 있다.
일 실시예에 따른 파워 반도체 모듈은 전극 보강층으로 무전해 니켈 도금층을 사용하므로, 녹는 점이 높은 구리 와이어를 사용하여 고온동작 파워 모듈에서 안정적으로 전기적 연결을 제공할 수 있으며, 전극 상의 귀금속층을 사용하지 않으므로 제조원가가 감소할 수 있다.
무전해 니켈 도금층은 나노 그레인 또는 비정질 amorphous) 층으로 형성되어서, 마이크로 그레인 니켈에 비해 강도가 높게 된다. 이에, 보다 얇은 두께의 층으로 소자 패드를 보강할 수 있게 된다.
도 1은 일 실시예에 따른 파워 반도체 모듈의 구조를 개략적으로 보여주는 단면도다.
도 2는 도 1의 구조를 개략적으로 보여주는 평면도다.
도 3은 다른 실시예에 따른 반도체 모듈의 구조를 개략적으로 보여주는 평면도다.
이하, 첨부된 도면을 참조하여 본 발명의 실시예를 상세하게 설명한다. 참고로, 도면들에서 동일한 참조부호는 동일한 구성요소를 지칭하며, 동일한 명칭을 지닌 구성 요소들은 동일한 물질로 형성된 것일 수 있다. 도면 상에서 각 구성요소의 크기는 설명의 명료성과 편의상 과장되어 있을 수 있다.
한편, 이하에 설명되는 실시예는 단지 예시적인 것에 불과하며, 이러한 실시예들로부터 다양한 변형이 가능하다. 예를 들면, 한 층이 기판이나 다른 층의 "위", "상부" 또는 "상"에 구비된다고 설명될 때, 그 층은 기판이나 다른 층에 직접 접하면서 위에 존재할 수도 있고, 그 사이에 또 다른 층이 존재할 수도 있다.
또한, "상의" 또는 "위의" 및 "하의" 또는 "아래의"와 같은 상대적인 용어들은 도면들에서 도해되는 것처럼 다른 요소들에 대한 어떤 요소들의 상대적인 관계를 기술하기 위해 여기에서 사용될 수 있다. 상대적 용어들은 도면들에서 묘사되는 방향에 추가하여 소자의 다른 방향들을 포함하는 것을 의도한다고 이해될 수 있다. 예를 들어, 도면들에서 구성요소가 뒤집어 진다면(turned over), 다른 요소들의 상부의 면 상에 존재하는 것으로 묘사되는 요소들은 상기 다른 요소들의 하부의 면 상에 방향을 가지게 된다. 그러므로, 예로써 든 "상의"라는 용어는, 도면의 특정한 방향에 의존하여 "하의" 및 "상의" 방향 모두를 포함할 수 있다. 소자가 다른 방향으로 향한다면(다른 방향에 대하여 90도 회전), 본 명세서에 사용되는 상대적인 설명들은 이에 따라 해석될 수 있다.
본 명세서에서 "층"이라는 용어는, 물체들이 포개져 생기는 구조체의 일부를 지칭하기 위하여 사용한다. 따라서, "층"이라는 용어는 물체들의 두께에 의해 의미가 한정되어 해석될 필요는 없다.
도 1은 일 실시예에 따른 파워 반도체 모듈(100)의 구조를 개략적으로 보여주는 단면도다.
도 1 및 도 2를 함께 참조하면, 기판(110) 상에 파워소자(130)가 접착되어 있다. 기판(110) 상에는 복수의 파워소자(130)가 배치될 수 있으며, 도 1 및 도 2에서는 편의상 하나의 파워소자(130)를 도시하였다.
파워소자(130)는 하부전극(131), 반도체층(132), 및 상부전극(133)을 포함할 수 있다. 하부전극(131)은 기판(110) 상에 솔더층(120)을 사이에 두고 기판(110)에 본딩될 수 있다. 파워소자(130)에는 통상 2개의 전극 또는 3개의 전극이 형성될 수 있다. 도 1에서는 편의상 파워소자(130)의 상면과 하면에 각각 하나의 전극이 형성된 것을 도시하였다. 파워소자(130)의 상부전극(133) 상에는 무전해 니켈 도금층(150)이 형성된다. 상부 전극(133)은 Al층 또는 Al 합금층일 수 있다.
파워소자(130) 위에서 상부 전극(133)의 주위에는 절연층(140)이 형성될 수 있다. 절연층(140)은 상부 전극(133) 영역을 한정한다. 상부전극(133)이 두개의 전극으로 형성된 경우, 절연층(140)은 두개의 전극 사이에 형성될 수 있다. 절연층(140)은 실리콘 옥사이드, 실리콘 나이트라이드, 폴리이미드 등으로 형성될 수 있다.
파워소자(130)의 측면에는 보호층(160)이 형성된다. 보호층(160)은 파워소자(130)의 측면을 감싸도록 형성된다. 파워 반도체 모듈(100)에는 복수의 파워소자(130)가 배치될 수 있으며, 보호층(160)은 복수의 파워소자들 (130) 사이에 형성될 수 있다. 보호층(160)은 니켈 도금층(150)의 형성중 니켈이 파워소자(130)의 측면을 덮는 것을 방지한다. 보호층(160)은 폴리머 레지스트, 실리콘 옥사이드, 실리콘 나이트라이드로 형성될 수 있다. 폴리머 레지스트로 보호층(160)을 형성하는 경우 프린팅 또는 디스펜싱 방법을 사용할 수 있다. 또한, 산소 플라즈마 처리 또는 질소 플라즈마 처리로 실리콘 옥사이드층 또는 실리콘 나이트라이드층으로 이루어진 보호층(160)을 형성할 수 있다. 보호층(160)은 도금이 끝난 후에 필요하다면 제거 될 수 있다.
기판(110)은 DBC(direct bonded copper) 기판일 수 있다. 도 1에서는 DBC 기판(110)을 사용한 예를 도시한 것이다. DBC 기판(110)은 세라믹층(111)과 세라믹층(111)의 하부에 형성된 제1 구리층(113)과 세라믹층(111) 상의 제2 구리층(115)을 구비한다. 세라믹층(111)은 전기적 절연을 위해 알루미나 또는 알루미늄 나이트라이드 등으로 형성될 수 있다.
제2 구리층(115)은 패터닝되어서 형성된 복수의 아일랜드 부분(115a, 115b)을 포함한다. 여기서 DBC 기판(110)은 반도체층(132)을 포함하는 파워 소자(130)에 전력을 공급하는 역할 및 파워소자(130)에서 발생하는 열을 그 외부로 방출시키는 열 방출 통로로서의 역할을 할 수 있다.
솔더층(120)은 솔더링(soldering) 또는 신터링(sintering) 공정에 의해 형성될 수 있다. 솔더층(120)은 예를 들어, 주석(Sn), 구리(Cu), 은(Ag), 금(Au), 아연(Zn), 납(Pb), 비스무스(Bi) 또는 인듐(In) 중 적어도 하나의 물질을 포함하여 형성된 것일 수 있다. 신터링의 경우, 나노 또는 마이크로 크기의 은 페이스트(silver paste) 또는 Cu 페이스트를 사용하여, 가압 및 가열 공정에 의해 수행될 수 있다.
도 2는 도 1의 구조를 개략적으로 보여주는 평면도다.
도 2에서는 편의상 두개의 아일랜드 부분(115a, 115b)을 도시하였지만 본 실시예는 이에 한정되지 않으며 3개 이상의 아일랜드 부분을 포함할 수 있다.
니켈 도금층(150)과 아일랜드 부분(115b)은 구리 와이어(170)에 의해 전기적으로 연결된다. 구리 와이어(170)는 녹는 점이 대략 1084℃로 알루미늄 와이어에 비해서 훨씬 높으며 따라서, 비교적 고온에서 동작하는 파워 모듈에서 사용되어도 변형이 적다.
구리 와이어(170)는 와이어를 연결하고자 하는 부위에 배치한 다음, 구리 와이어에 하중을 가한 상태에서 초음파 에너지를 인가하여 와이어와 연결 부위 사이의 금속-금속 본딩을 하여 형성될 수 있다. 구리 와이어(170)는 대략 100-500㎛ 직경을 가질 수 있다. 구리 와이어(170)는 웨지 본딩에 의해 니켈 도금층(150)과 선접촉을 하는 헤비 웨지 본딩(heavy wedge bonding) 형태이다.
구리 와이어(170)는 종래의 알루미늄 와이어 보다 강도가 높으므로, 와이어 본딩이 이루어지는 파워소자(130)의 패드를 보강해야 한다. 구리 와이어(170)는 알루미늄 와이어 보다 강도 및 경도가 높으므로, 전극의 보강없이 구리 와이어 본딩을 하는 경우 파워 소자의 파손이 생길 수 있다.
니켈 도금층(150)은 상술한 보강을 위해 형성된다. 니켈 도금층(150)은 알루미늄 패드 상에 무전해 도금 방법으로 형성될 수 있다. 무전해 도금으로 형성된 니켈 도금층(150)에는 니켈 산화물의 생성이 억제되며, 따라서, Pd, Au, Ag와 같은 귀금속(noble metal) 없이 구리 와이어 본딩을 할 수 있다.
무전해 니켈 도금층(150)은 구리 와이어 본딩을 위한 패드의 강도를 증가시킨다. 구리 와이어(170)는 알루미늄 와이어와 비교하여 최소 2 배 이상 강도 및 경도가 높다. 따라서, 구리 와이어(170)로 와이어 본딩을 하는 경우 와이어 본딩시 가해지는 힘과 초음파 에너지에 의한 파워소자의 손상을 방지하기 위해 전극패드에 대해 추가적인 전극 강화 도금(electrode pad strengthening metallization) 이 필요하다.
또한, 니켈 도금층(150)은 구리 와이어(170)의 구리가 파워소자로 확산되는 것을 방지하는 배리어로 작용할 수 있다.
니켈 도금층(150)은 나노 그레인 혹은 비정질층으로 형성되어서, 마이크로 그레인 니켈에 비해 강도가 높게 된다. 이에, 보다 얇은 두께의 층으로 패드를 보강할 수 있게 된다.
니켈 도금층(150)은 3~30㎛ 두께로 형성될 수 있다. 니켈 도금층(150)의 두께는 구리 와이어(170)의 직경이 증가할수록 증가할 수 있다. 니켈 도금층(150)이 3㎛ 보다 얇으면 상부 전극(133)를 보강하는 힘이 약하여 구리 와이어(170)를 본딩하는 과정에서 파워 소자(130)가 깨질 수 있다. 니켈 도금층(150)이 30㎛ 보다 두껍게 형성되면 파워소자(130)에 워피지(warpage)가 생길 수 있으며, 제조비용이 증가할 수 있다.
한편, 전극(150) 위에 무전해 니켈 도금시, Al/Ni의 접합력이 좋아 별도의 접착층(adhesion layer)을 필요로 하지 않는다.
또한, 파워소자 패드 보강층을 위해 도입된 무전해 니켈 도금 공정은 다음과 같은 많은 장점이 있다.
첫째: Ni 도금층은 저비용 습식 공정인 무전해 도금으로 형성되므로, 진공 Ni 증착공정에 비해 증착속도(deposition rate)가 빠르다.
둘째: 무전해 Ni 도금법을 이용하면, 파워 소자의 전극 위에만 선택적으로 도금할 수 있다. 즉, Ni 층의 리소그래피는 매우 어려운 공정인데, 무전해 Ni 도금은 추가적인 리소그래피를 필요로 하지 않는다.
셋째: 무전해 Ni 도금은 사용되는 환원제에 따라, 인 (Phosphorus) 또는 보론(Boron)이 함유되며 이들의 함유량 또는 열처리에 따라 Ni 도금층에 요구되는 기계적 물성을 조절할 수 있다.
구리 와이어(170)는 도 2에서 보면 복수 개, 예컨대 8개로 도시되어 있다. 고용량 파워소자에서는 하나의 와이어가 제공하는 파워에 한계가 있다. 즉, 120 킬로와트(KW) 파워소자의 경우 600V/60A 구리 와이어 4개가 필요하며 안전률(safety factor)을 고려하여 8개의 구리 와이어로 구성되어서 파워를 공급할 수 있다.
상기 실시예에서는 DBC 기판을 예시하였으나, 본 발명은 이에 한정되지 않는다. 예컨대, 리드프레임 기판, PCB (printed circuit board) 기판 등이 기판으로 사용될 수 있다. PCB 기판의 상면에는 분리된 복수의 구리 패턴이 형성되어 있으며, 각 구리 패턴 상에 파워소자가 형성되거나 또는 각 패턴은 전극패드로 이용될 수 있다. 리드프레임 기판에서 복수의 메탈이 배치되며, 파워소자는 메탈 상에 배치되며, 다른 메탈은 전극패드로 이용될 수 있다.
파워소자(130)는 MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor), IGBT(Insulated Gate Bipolar Transistor), 다이오드 중 어느 하나일 수 있다.
파워소자(130)가 다이오드인 경우, 하부전극(131) 및 상부전극(133)은 각각 캐소드 전극 및 애노드 전극 중 서로 다른 하나일 수 있다.
파워소자(130)가 MOSFET 인 경우, 하부전극(131) 및 상부전극(133) 중 하나는 두 개의 전극일 수 있다. 일 예로 하부전극(131)은 드레인 전극이며, 상부전극(133)은 소스 전극 및 게이트 전극을 포함할 수 있다. 도 3은 파워소자가 MOSFET 인 경우의 개략적 평면도다. 도 1 및 도 2의 구성요소와 실질적으로 동일한 구성요소에는 동일한 참조번호를 사용하고 상세한 설명은 생략한다.
도 3을 참조하면, 상부전극(133)은 소스전극(133a)과 게이트 전극(133b)를 포함한다. 소스전극(133a) 및 게이트 전극(133b) 상에는 각각 니켈도금층(150a, 150b)가 형성될 수 있다. 니켈도금층(150a)은 8개의 구리 와이어(170)으로 아일랜드(115b)에 연결된다. 니켈도금층(150b)은 별도의 와이어(172)를 통해서 아일랜드(115c)에 연결될 수 있다.
파워소자(130)가 IGBT 인 경우, 하부전극(131) 및 상부전극(133) 중 하나는 두 개의 전극일 수 있다. 일 예로 하부전극(131)은 콜렉터 전극이며, 상부전극(133)은 에미터 전극 및 게이트 전극을 포함할 수 있다. 에미터 전극 및 게이트 전극과 전극패드의 연결은 도 3을 참조하면 알 수 있으므로 상세한 설명은 생략한다.
상기 실시예에서는 하나의 파워소자와 전극패드가 구리 와이어로 연결되는 것을 보여주고 있으나, 본 발명은 이에 한정되지 않는다. 예컨대, 두 개의 파워소자와 전극패드가 하나의 구리 와이어로 연결될 수 있다. 예컨대, 다이오드 상면의 전극이 IGBT 상부전극과 하나의 구리 와이어로 연결되고, 이어서, 상기 구리와이어가 기판 상의 전극패드에 연결될 수 있다.
상술한 실시예에 따르면, 전극 보강층으로 무전해 니켈 도금층을 사용하므로, 녹는 점이 높은 구리 와이어를 사용하여 고온동작 파워 모듈에서 안정적으로 전기적 연결을 제공할 수 있으며, 전극 상의 귀금속층을 사용하지 않으므로 제조원가가 감소할 수 있다.
무전해 니켈 도금층은 나노 그레인 혹은 비정질층으로 형성되어서, 마이크로 그레인 니켈에 비해 강도가 높아, 보다 얇은 두께의 층으로 패드를 보강할 수 있게 된다. 이상에서 첨부된 도면을 참조하여 설명된 본 발명의 실시예들은 예시적인 것에 불과하며, 당해 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능함을 이해할 수 있을 것이다. 따라서 본 발명의 진정한 보호범위는 첨부된 특허청구범위에 의해서만 정해져야 할 것이다.
100: 파워 반도체 모듈 110: DBC 기판
111: 세라믹층 113, 115: 구리층
120: 솔더층 130: 파워소자
131: 하부전극 132: 반도체층
133: 상부전극 140: 절연층
150: 니켈 도금층 160: 보호층
170: 구리 와이어

Claims (13)

  1. 기판 상의 적어도 하나의 파워 소자;
    상기 파워소자의 상면의 적어도 하나의 전극;
    상기 전극 상의 니켈 도금층; 및
    상기 니켈 도금층에 연결되는 구리 와이어;를 구비한 파워 반도체 모듈.
  2. 제 1 항에 있어서,
    상기 전극은 알루미늄 또는 알루미늄 합금으로 이루어진 파워 반도체 모듈.
  3. 제 1 항에 있어서,
    상기 기판 상에서 상기 파워소자와 이격된 전극패드를 더 구비하며, 상기 구리 와이어는 상기 전극 패드와 연결되는 파워 반도체 모듈.
  4. 제 1 항에 있어서,
    상기 기판은 DBC (direct bonded copper) 기판, 리드프레임 기판, 인쇄회로 기판 중 하나인 파워 반도체 모듈.
  5. 제 1 항에 있어서,
    상기 파워소자는 절연 게이트 이극성 트랜지스터(insulated gate bipolar transistor: IGBT), 모스페트(MOSFET), 다이오드 중 적어도 하나를 포함하는 파워 반도체 모듈.
  6. 제 5 항에 있어서,
    상기 파워소자는 절연 게이트 이극성 트랜지스터(insulated gate bipolar transistor: IGBT), 모스페트(MOSFET), 다이오드 중 서로 다른 두 개의 파워소자를 포함하며,
    상기 구리 와이어는 상기 서로 다른 두 개의 파워소자의 각각의 상면에 형성된 전극 위의 니켈도금층을 연결하는 파워 반도체 모듈.
  7. 제 1 항에 있어서,
    상기 니켈 도금층은 3~30㎛ 두께를 가지는 파워 반도체 모듈.
  8. 제 1 항에 있어서,
    상기 니켈 도금층은 인 또는 보론을 포함하는 파워 반도체 모듈.
  9. 제 1 항에 있어서,
    상기 니켈 도금층은 나노 그레인 또는 비정질 층으로 형성된 파워 반도체 모듈.
  10. 제 1 항에 있어서,
    상기 파워 소자의 측면을 둘러싸는 보호층을 더 구비한 파워 반도체 모듈.
  11. 제 10 항에 있어서,
    상기 보호층은 폴리머 레지스트, 실리콘 옥사이드, 실리콘 나이트라이드를 포함하는 파워 반도체 모듈.
  12. 제 1 항에 있어서,
    상기 구리 와이어는 100~500㎛ 직경을 가진 파워 반도체 모듈.
  13. 제 1 항에 있어서,
    상기 구리 와이어는 상기 니켈 도금층에 웨지 본딩으로 연결되어 상기 니켈 도금층과 선접촉을 하는 파워 반도체 모듈.
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