JP5443465B2 - 発光素子、発光素子の製造方法、及び発光素子パッケージ - Google Patents
発光素子、発光素子の製造方法、及び発光素子パッケージ Download PDFInfo
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- JP5443465B2 JP5443465B2 JP2011290441A JP2011290441A JP5443465B2 JP 5443465 B2 JP5443465 B2 JP 5443465B2 JP 2011290441 A JP2011290441 A JP 2011290441A JP 2011290441 A JP2011290441 A JP 2011290441A JP 5443465 B2 JP5443465 B2 JP 5443465B2
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- -1 Si 3 N 4 Inorganic materials 0.000 description 4
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- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
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- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
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- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
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- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
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- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Manufacturing & Machinery (AREA)
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Description
(実施形態)
が、これに対して限定するのではない。
して電気的に連結されたことが例示されている。
Claims (10)
- 発光構造物と、
前記発光構造物の上の蛍光体層と、
前記蛍光体層の上に形成された光抽出パターンと、
前記発光構造物の下の第2電極層と
を備え、
前記発光構造物は、第1導電型半導体層、第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間の活性層を有し、
前記光抽出パターンは、前記蛍光体層を部分的に曝露させていて、
前記光抽出パターンにより光が抽出される間、前記蛍光体層での発光分布は、水平方向よりは垂直方向に向かい、かつ
前記光抽出パターンは、前記蛍光体層の上に直接配置されている、発光素子。 - 前記光抽出パターンは、周期的なパターン又は非周期的なパターンを有する、請求項1に記載の発光素子。
- 前記光抽出パターンは、酸化物、窒化物、または塩化物のうち、少なくともいずれか1つを含む誘電体を有する、請求項1又は2に記載の発光素子。
- 前記光抽出パターンは、前記蛍光体層と屈折率の異なる物質を含む、請求項1乃至3のいずれかに記載の発光素子。
- 前記光抽出パターンの上に背景物質を更に備え、
前記背景物質と前記光抽出パターンとは互いに屈折率が異なる、請求項1乃至4のいずれかに記載の発光素子。 - 前記光抽出パターンは、前記周期的なパターンを有し、
前記周期的なパターンは50nm乃至3000nmの周期を有する、請求項1乃至5のいずれかに記載の発光素子。 - 前記蛍光体層は、均一な厚さを有する、請求項1乃至6のいずれかに記載の発光素子。
- 前記光抽出パターンは、前記発光構造物の内部で生成されて前記蛍光体層と前記光抽出パターンとの界面に入射する光を前記発光構造物の外部に抽出する、請求項1乃至7のいずれかに記載の発光素子。
- 発光構造物と、
前記発光構造物の上の蛍光体層と、
前記蛍光体層の上に形成された光抽出パターンと、
前記発光構造物の下の第2電極層と、
前記発光構造物の斜め下方に形成されている保護部材と
を備え、
前記発光構造物は、第1導電型半導体層、第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間の活性層を有し、
前記光抽出パターンは、前記蛍光体層を部分的に曝露させていて、
前記光抽出パターンにより光が抽出される間、前記蛍光体層での発光分布は、水平方向よりは垂直方向に向かう、発光素子。 - 前記第2電極層は、オーミック層、反射層、結合層、及び支持基板の少なくとも1つを有し、
前記保護部材は、前記発光構造物と結合層との間の周囲に形成されている、請求項9に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0013553 | 2010-02-12 | ||
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Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
KR100969100B1 (ko) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101650021B1 (ko) * | 2010-09-15 | 2016-08-30 | 엘지이노텍 주식회사 | 발광 소자 |
JP2012231000A (ja) * | 2011-04-26 | 2012-11-22 | Toshiba Corp | 半導体発光装置 |
TW201306323A (zh) * | 2011-07-31 | 2013-02-01 | Walsin Lihwa Corp | 發光二極體裝置 |
WO2013099193A1 (ja) | 2011-12-26 | 2013-07-04 | コニカミノルタ株式会社 | Led装置用封止剤、led装置、及びled装置の製造方法 |
CN103367570B (zh) * | 2012-03-30 | 2016-01-20 | 清华大学 | 白光led |
CN103367561B (zh) * | 2012-03-30 | 2016-08-17 | 清华大学 | 发光二极管的制备方法 |
CN103474548B (zh) * | 2012-06-07 | 2016-12-07 | 清华大学 | 半导体结构 |
JP6192987B2 (ja) * | 2012-06-12 | 2017-09-06 | エルジー イノテック カンパニー リミテッド | 照明装置 |
SG2012082020A (en) | 2012-11-02 | 2014-06-27 | Sony Corp | A system and method for tracking |
JP6307703B2 (ja) * | 2013-05-31 | 2018-04-11 | パナソニックIpマネジメント株式会社 | 波長変換素子、波長変換素子を備えた発光装置、発光装置を備えた車両、および波長変換素子の製造方法 |
KR102075713B1 (ko) | 2013-07-15 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
CN103730549A (zh) * | 2014-01-07 | 2014-04-16 | 大连理工大学 | 一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法 |
US9515239B2 (en) | 2014-02-28 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
US9618697B2 (en) | 2014-02-28 | 2017-04-11 | Panasonic Intellectual Property Management Co., Ltd. | Light directional angle control for light-emitting device and light-emitting apparatus |
WO2015128909A1 (ja) | 2014-02-28 | 2015-09-03 | パナソニックIpマネジメント株式会社 | 発光素子および発光装置 |
CN105940510B (zh) | 2014-02-28 | 2019-01-11 | 松下知识产权经营株式会社 | 发光装置 |
US9518215B2 (en) | 2014-02-28 | 2016-12-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
WO2015129222A1 (ja) | 2014-02-28 | 2015-09-03 | パナソニックIpマネジメント株式会社 | 発光素子および発光装置 |
JP6349973B2 (ja) * | 2014-05-30 | 2018-07-04 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2016033969A (ja) * | 2014-07-31 | 2016-03-10 | 株式会社東芝 | 電子部品、及び電子ユニット |
KR102310805B1 (ko) * | 2014-08-07 | 2021-10-08 | 엘지이노텍 주식회사 | 형광체 플레이트 및 이를 포함하는 조명장치 |
JP2016171228A (ja) | 2015-03-13 | 2016-09-23 | パナソニックIpマネジメント株式会社 | 発光素子、発光装置および検知装置 |
US10031276B2 (en) | 2015-03-13 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Display apparatus including photoluminescent layer |
JP6569856B2 (ja) | 2015-03-13 | 2019-09-04 | パナソニックIpマネジメント株式会社 | 発光装置および内視鏡 |
US10182702B2 (en) | 2015-03-13 | 2019-01-22 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
JP2016178234A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 半導体受光デバイス |
JP2017005054A (ja) | 2015-06-08 | 2017-01-05 | パナソニックIpマネジメント株式会社 | 発光装置 |
JP2017003697A (ja) | 2015-06-08 | 2017-01-05 | パナソニックIpマネジメント株式会社 | 発光素子および発光装置 |
JP6748905B2 (ja) | 2015-08-20 | 2020-09-02 | パナソニックIpマネジメント株式会社 | 発光装置 |
US10359155B2 (en) | 2015-08-20 | 2019-07-23 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
JP2017040818A (ja) | 2015-08-20 | 2017-02-23 | パナソニックIpマネジメント株式会社 | 発光素子 |
WO2017054937A1 (en) | 2015-09-29 | 2017-04-06 | Philips Lighting Holding B.V. | Light source with diffractive outcoupling |
KR101783601B1 (ko) * | 2016-03-25 | 2017-10-10 | 한국과학기술연구원 | 발광 소자 및 발광 소자 패키지 |
JP6719094B2 (ja) | 2016-03-30 | 2020-07-08 | パナソニックIpマネジメント株式会社 | 発光素子 |
US11294195B2 (en) * | 2018-11-05 | 2022-04-05 | Osram Opto Semiconductors Gmbh | Aperiodic nano-optical array for angular shaping of incoherent emissions |
JP7443866B2 (ja) | 2020-03-23 | 2024-03-06 | セイコーエプソン株式会社 | 波長変換素子、照明装置およびプロジェクター |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
EP4036354A4 (en) | 2020-06-01 | 2023-11-29 | Jamco Corporation | LOCK BUTTON FIXATION, TOILET DOOR AND METHOD FOR MOUNTING LOCK BUTTON FIXATION |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
DE102021119003A1 (de) * | 2021-07-22 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterelement und optoelektronisches bauelement |
Family Cites Families (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
JP2002299698A (ja) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | 発光装置 |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
EP3078899B1 (en) * | 2001-08-09 | 2020-02-12 | Everlight Electronics Co., Ltd | Led illuminator and card type led illuminating light source |
WO2003034508A1 (en) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Light emitting device and method for manufacture thereof |
CA2754097C (en) * | 2002-01-28 | 2013-12-10 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US7312560B2 (en) * | 2003-01-27 | 2007-12-25 | 3M Innovative Properties | Phosphor based light sources having a non-planar long pass reflector and method of making |
US7102175B2 (en) * | 2003-04-15 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
US7105861B2 (en) * | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7040774B2 (en) * | 2003-05-23 | 2006-05-09 | Goldeneye, Inc. | Illumination systems utilizing multiple wavelength light recycling |
US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
US7318651B2 (en) * | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
EP1733077B1 (en) * | 2004-01-15 | 2018-04-18 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
JP5005164B2 (ja) * | 2004-03-03 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | 発光素子,発光型表示装置及び照明装置 |
JP4020092B2 (ja) | 2004-03-16 | 2007-12-12 | 住友電気工業株式会社 | 半導体発光装置 |
CN100454596C (zh) * | 2004-04-19 | 2009-01-21 | 松下电器产业株式会社 | Led照明光源的制造方法及led照明光源 |
US7768023B2 (en) * | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
US7781789B2 (en) * | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
JP4857596B2 (ja) * | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
JP2006024615A (ja) | 2004-07-06 | 2006-01-26 | Matsushita Electric Ind Co Ltd | Led照明光源およびその製造方法 |
WO2006011734A1 (en) * | 2004-07-24 | 2006-02-02 | Young Rak Do | Led device comprising thin-film phosphor having two dimensional nano periodic structures |
US20060113895A1 (en) * | 2004-11-30 | 2006-06-01 | Baroky Tajul A | Light emitting device with multiple layers of quantum dots and method for making the device |
TWI420686B (zh) * | 2004-12-10 | 2013-12-21 | Panasonic Corp | 半導體發光裝置、發光模組及照明裝置 |
US7602116B2 (en) * | 2005-01-27 | 2009-10-13 | Advanced Optoelectronic Technology, Inc. | Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof |
JP2006286701A (ja) * | 2005-03-31 | 2006-10-19 | Mitsubishi Electric Corp | 半導体発光装置 |
KR100638819B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
CN101180745A (zh) * | 2005-06-09 | 2008-05-14 | 罗姆股份有限公司 | 半导体发光元件 |
US20070012928A1 (en) * | 2005-07-13 | 2007-01-18 | Zouyan Peng | Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors |
US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
JP4778745B2 (ja) * | 2005-07-27 | 2011-09-21 | パナソニック株式会社 | 半導体発光装置及びその製造方法 |
US7495383B2 (en) * | 2005-08-01 | 2009-02-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Phosphor based on a combination of quantum dot and conventional phosphors |
EP1935921B1 (en) * | 2005-09-22 | 2017-01-04 | Mitsubishi Chemical Corporation | Sealant for semiconductor light emitting device and method for manufacturing such sealant, and semiconductor light emitting device using such sealant |
WO2007080555A1 (en) * | 2006-01-16 | 2007-07-19 | Koninklijke Philips Electronics N.V. | Phosphor converted light emitting device |
JP2007273975A (ja) | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
US8049233B2 (en) * | 2006-03-10 | 2011-11-01 | Panasonic Electric Works Co., Ltd. | Light-emitting device |
US20070241661A1 (en) * | 2006-04-12 | 2007-10-18 | Yin Chua B | High light output lamps having a phosphor embedded glass/ceramic layer |
KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
US20070263408A1 (en) * | 2006-05-09 | 2007-11-15 | Chua Janet Bee Y | Backlight module and method of making the module |
KR100901947B1 (ko) * | 2006-07-14 | 2009-06-10 | 삼성전자주식회사 | 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법 |
JP2008084973A (ja) | 2006-09-26 | 2008-04-10 | Stanley Electric Co Ltd | 半導体発光デバイス |
KR101282775B1 (ko) * | 2006-11-03 | 2013-07-05 | 엘지이노텍 주식회사 | 수직형 발광 소자 및 그 제조방법 |
US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
TW200832743A (en) * | 2007-01-25 | 2008-08-01 | Chung-Hua Li | Method of forming a layered micro-optical structure, a micro-optical substrate containing same, and a LED containing same |
KR101259122B1 (ko) | 2007-01-26 | 2013-04-26 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조 방법 |
US7868542B2 (en) * | 2007-02-09 | 2011-01-11 | Canon Kabushiki Kaisha | Light-emitting apparatus having periodic structure and sandwiched optical waveguide |
KR100862532B1 (ko) | 2007-03-13 | 2008-10-09 | 삼성전기주식회사 | 발광 다이오드 패키지 제조방법 |
TWI341039B (en) * | 2007-03-30 | 2011-04-21 | Delta Electronics Inc | Light emitting diode apparatus |
JP2008270390A (ja) * | 2007-04-18 | 2008-11-06 | Matsushita Electric Ind Co Ltd | フロントカバー、発光装置およびフロントカバーの製造方法 |
KR100872717B1 (ko) | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US20090015142A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display devices |
US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
KR101383357B1 (ko) * | 2007-08-27 | 2014-04-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
DE102007052181A1 (de) * | 2007-09-20 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR100900288B1 (ko) * | 2007-10-29 | 2009-05-29 | 엘지전자 주식회사 | 발광 소자 |
KR100921462B1 (ko) * | 2007-11-16 | 2009-10-13 | 엘지전자 주식회사 | 수직형 발광 소자 |
US7846751B2 (en) * | 2007-11-19 | 2010-12-07 | Wang Nang Wang | LED chip thermal management and fabrication methods |
JP5212777B2 (ja) * | 2007-11-28 | 2013-06-19 | スタンレー電気株式会社 | 半導体発光装置及び照明装置 |
KR101592836B1 (ko) * | 2008-02-07 | 2016-02-05 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 발광 장치, 백라이트, 컬러 화상 표시 장치, 및 그들에 사용하는 형광체 |
US7868340B2 (en) * | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
KR101534848B1 (ko) * | 2008-07-21 | 2015-07-27 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법 |
US7825427B2 (en) * | 2008-09-12 | 2010-11-02 | Bridgelux, Inc. | Method and apparatus for generating phosphor film with textured surface |
TWI375338B (en) * | 2008-11-27 | 2012-10-21 | Epistar Corp | Opto-electronic device |
KR20100122998A (ko) * | 2009-05-14 | 2010-11-24 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP4742163B2 (ja) | 2009-07-24 | 2011-08-10 | 北越紀州製紙株式会社 | キャストコート紙の製造方法 |
JP2011033394A (ja) | 2009-07-30 | 2011-02-17 | Suzuki Motor Corp | 車両用エンジンの排気圧力検出装置 |
US8672523B2 (en) | 2009-09-16 | 2014-03-18 | Koninklijke Philips N.V. | Light emitter with predefined angular color point distribution |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101028277B1 (ko) * | 2010-05-25 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛 |
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KR100969100B1 (ko) | 2010-07-09 |
EP2360749A3 (en) | 2014-11-19 |
JP2011166148A (ja) | 2011-08-25 |
US8421110B2 (en) | 2013-04-16 |
TW201132228A (en) | 2011-09-16 |
CN102163676A (zh) | 2011-08-24 |
TWI578849B (zh) | 2017-04-11 |
US20110198645A1 (en) | 2011-08-18 |
US20130228813A1 (en) | 2013-09-05 |
JP2012104849A (ja) | 2012-05-31 |
JP2012064988A (ja) | 2012-03-29 |
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