JP5566850B2 - 発光素子、発光素子パッケージ及び照明システム - Google Patents
発光素子、発光素子パッケージ及び照明システム Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 151
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 54
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 265
- 238000000034 method Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 18
- 238000000059 patterning Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000000605 extraction Methods 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000011149 active material Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Description
図1は、第1の実施の形態による発光素子の平面図であり、図2は、第1の実施の形態による発光素子のA−A’線に沿う断面図である。
まず、図3のように、実施の形態の発光素子は、第2電極層110上に形成された発光構造物120を含むことができる。
実施の形態において、前記第1導電型半導体層122はN型半導体層、前記第2導電型半導体層126はP型半導体層で具現できるが、これに限定されない。また、前記第2導電型半導体層126の上には、前記第2導電型と反対の極性を有する半導体、例えばN型半導体層(図示せず)を形成することができる。これにより、発光構造物120は、N−P接合構造、P−N接合構造、N−P−N接合構造、P−N−P接合構造のうち、何れか一つの構造で具現できる。
Claims (15)
- 基板と、
第1導電型半導体層、前記第1導電型半導体層上に形成された第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間に形成された活性層を含んで前記基板上に形成された発光構造物と、
前記発光構造物上にある透光性層と、
前記透光性層上に形成されたパターニングされた蛍光体層と、
前記発光構造物上に第1電極及びパッド電極とを含み、
前記蛍光体層は、前記発光構造物から生成された光を前記発光構造物から生成された光の波長より長波長の光に変換させ、
前記蛍光体層が前記第1電極を露出し、
前記パターニングされた蛍光体層により前記発光構造物が一部露出し、
前記第1電極は、前記露出した発光構造物上に形成され、
前記蛍光体層が前記第1電極を複数の領域から露出させ、
前記第1電極の高さが前記パターニングされた蛍光体層の高さより低い発光素子。 - 前記蛍光体層の厚さは5μm〜500μmである請求項1に記載の発光素子。
- 前記蛍光体層の上面は平坦である請求項1または2に記載の発光素子。
- 前記第1電極は、電気的に接続したラインパターンである請求項1〜3のいずれかに記載の発光素子。
- 前記パターニングされた蛍光体層により露出する発光構造物の上面が円状である請求項1〜4のいずれかに記載の発光素子。
- 前記パターニングされた蛍光体層は円状にパターニングされるか、又は前記パターニングされた蛍光体層は側面にパターンを含む請求項1〜5のいずれかに記載の発光素子。
- 前記蛍光体層は、前記透光性層上に形成された第1蛍光体層と、
前記発光構造物の側面の少なくとも一部に形成された第2蛍光体層とを含む請求項1〜6のいずれかに記載の発光素子。 - 前記第1蛍光体層は、第1厚さを有し、前記第2蛍光体層は、第2厚さを有し、前記第2厚さは、前記第1厚さの2倍以下である請求項7に記載の発光素子。
- 前記パターニングされた蛍光体層の面積が前記発光素子の発光面積の30%〜90%である請求項1〜8のいずれかに記載の発光素子。
- 基板と、
第1導電型半導体層、前記第1導電型半導体層上に形成された第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間に形成された活性層を含んで前記基板上に形成された発光構造物と、
前記発光構造物上にある透光性層と、
前記透光性層上に蛍光体層とを含み、
前記蛍光体層は、前記発光構造物から生成された光を前記発光構造物から生成された光の波長より長波長の光に変換させ、
前記蛍光体層の外周部はパターニングされており、
前記パターニングされた蛍光体層により、前記発光構造物の外周部の少なくとも一部が露出する発光素子。 - 前記蛍光体層は、前記透光性層上に形成された第1蛍光体層と、
前記発光構造物の側面の少なくとも一部に形成された第2蛍光体層とを含む請求項10に記載の発光素子。 - 前記第1蛍光体層は、第1厚さを有し、前記第2蛍光体層は、第2厚さを有し、前記第2厚さは、前記第1厚さの2倍以下である請求項11に記載の発光素子。
- 前記パターニングされた蛍光体層の面積が前記発光素子の発光面積の30%〜90%である請求項10または11に記載の発光素子。
- パッケージ本体と、
前記パッケージ本体に設置された少なくとも一つの電極層と、
前記電極層と電気的に接続した発光素子とを含み、
前記発光素子は、前記請求項1または請求項10に記載の発光素子である発光素子パッケージ。 - 基板と、
前記基板上に設置された請求項14に記載の発光素子パッケージとを含む発光モジュールを含む照明システム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0101228 | 2009-10-23 | ||
KR20090101228 | 2009-10-23 | ||
KR10-2010-0013319 | 2010-02-12 | ||
KR1020100013319A KR100993045B1 (ko) | 2009-10-23 | 2010-02-12 | 발광소자 칩 및 발광소자 패키지 |
Publications (2)
Publication Number | Publication Date |
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JP2011091401A JP2011091401A (ja) | 2011-05-06 |
JP5566850B2 true JP5566850B2 (ja) | 2014-08-06 |
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JP2010234726A Active JP5566850B2 (ja) | 2009-10-23 | 2010-10-19 | 発光素子、発光素子パッケージ及び照明システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US8368300B2 (ja) |
EP (1) | EP2315279B1 (ja) |
JP (1) | JP5566850B2 (ja) |
KR (1) | KR100993045B1 (ja) |
CN (1) | CN102044623B (ja) |
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US20090309114A1 (en) * | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
CN103022288B (zh) * | 2011-09-27 | 2017-02-01 | 比亚迪股份有限公司 | 一种发光二极管及其制造方法 |
JP2013175635A (ja) * | 2012-02-27 | 2013-09-05 | Stanley Electric Co Ltd | 半導体発光素子、およびその製造方法 |
CN103794703B (zh) * | 2012-11-02 | 2017-04-19 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
KR20140094752A (ko) | 2013-01-22 | 2014-07-31 | 삼성전자주식회사 | 전자소자 패키지 및 이에 사용되는 패키지 기판 |
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EP1441396B1 (de) * | 1996-06-26 | 2011-06-01 | OSRAM Opto Semiconductors GmbH | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP4507636B2 (ja) * | 2003-03-27 | 2010-07-21 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4415572B2 (ja) | 2003-06-05 | 2010-02-17 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
KR101047683B1 (ko) * | 2005-05-17 | 2011-07-08 | 엘지이노텍 주식회사 | 와이어 본딩이 불필요한 발광소자 패키징 방법 |
TWI291244B (en) * | 2005-07-07 | 2007-12-11 | Formosa Epitaxy Inc | Light emitting diode and light emitting diode package |
CN1897313A (zh) * | 2005-07-12 | 2007-01-17 | 璨圆光电股份有限公司 | 发光二极管及其封装结构 |
CN100594623C (zh) * | 2005-09-20 | 2010-03-17 | 松下电工株式会社 | 发光二极管照明器具 |
JP2007235103A (ja) * | 2006-01-31 | 2007-09-13 | Sanyo Electric Co Ltd | 半導体発光装置 |
KR100723233B1 (ko) * | 2006-03-31 | 2007-05-29 | 삼성전기주식회사 | 백색 발광 소자 |
DE102006024165A1 (de) * | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
DE102007025092A1 (de) * | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
KR20090002835A (ko) * | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
JP5199622B2 (ja) | 2007-08-27 | 2013-05-15 | パナソニック株式会社 | 火災感知器 |
JP5199623B2 (ja) * | 2007-08-28 | 2013-05-15 | パナソニック株式会社 | 発光装置 |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
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EP2315279A3 (en) | 2013-10-16 |
CN102044623B (zh) | 2015-12-09 |
US8368300B2 (en) | 2013-02-05 |
CN102044623A (zh) | 2011-05-04 |
EP2315279B1 (en) | 2017-12-06 |
EP2315279A2 (en) | 2011-04-27 |
US20110156579A1 (en) | 2011-06-30 |
KR100993045B1 (ko) | 2010-11-08 |
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