JP2011139062A - 発光素子、発光素子パッケージおよび照明システム - Google Patents
発光素子、発光素子パッケージおよび照明システム Download PDFInfo
- Publication number
- JP2011139062A JP2011139062A JP2010289996A JP2010289996A JP2011139062A JP 2011139062 A JP2011139062 A JP 2011139062A JP 2010289996 A JP2010289996 A JP 2010289996A JP 2010289996 A JP2010289996 A JP 2010289996A JP 2011139062 A JP2011139062 A JP 2011139062A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- nanostructure
- emitting device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- 239000002086 nanomaterial Substances 0.000 claims abstract description 81
- 239000002105 nanoparticle Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 38
- 150000004767 nitrides Chemical class 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 180
- 238000000034 method Methods 0.000 description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 229910052738 indium Inorganic materials 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910019897 RuOx Inorganic materials 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- -1 for example Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910018229 Al—Ga Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
【達成手段】本発明は発光素子、発光素子パッケージおよび照明システムに関する。
本発明の発光素子は第1導電型半導体層、第2導電型半導体層および前記第1導電型半導体層と前記第2導電型半導体層の間に活性層を含む発光構造物と、前記発光構造物上に第1非晶質層、および前記第1非晶質層上にナノ粒子形態のナノ構造物と、を含む。
【選択図】図1
Description
Claims (13)
- 第1導電型半導体層、第2導電型半導体層および前記第1導電型半導体層と前記第2導電型半導体層の間に活性層を含む発光構造物と、
前記発光構造物上に第1非晶質層、および前記第1非晶質層上にナノ粒子形態のナノ構造物と、を含む発光素子。 - 前記ナノ構造物は窒化物半導体ナノ構造物を含む請求項1に記載の発光素子。
- 前記ナノ構造物は、前記第1非晶質層上に第1ナノ構造物、および前記第1ナノ構造物上に第2ナノ構造物と、を含む請求項1に記載の発光素子。
- 前記第1ナノ構造物はAlNまたはGaNを含み、前記第2ナノ構造物はInGaNを含む請求項3に記載の発光素子。
- 前記ナノ構造物は前記第1ナノ構造物と前記第2ナノ構造物の積層が複数形成されている請求項3に記載の発光素子。
- 前記ナノ構造物上に第2非晶質層を含む請求項1に記載の発光素子。
- 前記第1非晶質層は非晶質窒化膜または非晶質酸化膜を含む請求項1に記載の発光素子。
- 前記第1非晶質層は前記発光構造物とオーミック性質の第1オーミック誘電体層を含む請求項1に記載の発光素子。
- 前記ナノ構造物上に第2オーミック誘電体層を含む請求項8に記載の発光素子。
- 前記ナノ構造物はAlxInyGa(1−x−y)N(0≦x≦1、0≦y≦1、0≦x+y≦1)である請求項2に記載の発光素子。
- 前記ナノ構造物は2×10−9〜9000×10−9mの粒子を含む請求項1に記載の発光素子。
- パッケージ本体と、
前記パッケージ本体に含まれる少なくとも1つの電極層と、
第1導電型半導体層、第2導電型半導体層および前記第1導電型半導体層と前記第2導電型半導体層の間に介在する活性層を含む発光構造物と、前記発光構造物上に第1非晶質層および前記第1非晶質層上にナノ粒子形態のナノ構造物を含み、前記電極層と電気的に連結された発光素子と、を含む発光素子パッケージ。 - 基板と、前記基板上に設置された発光素子パッケージとを含む発光モジュールを含み、
前記発光素子パッケージは、パッケージ本体と、前記パッケージ本体に含まれる少なくとも1つの電極層と、および第1導電型半導体層、第2導電型半導体層および前記第1導電型半導体層と前記第2導電型半導体層の間に介在する活性層を含む発光構造物と、前記発光構造物上に第1非晶質層および前記第1非晶質層上にナノ粒子形態のナノ構造物を含み、前記電極層と電気的に連結された発光素子を含む照明システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0132731 | 2009-12-29 | ||
KR1020090132731A KR100993074B1 (ko) | 2009-12-29 | 2009-12-29 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011139062A true JP2011139062A (ja) | 2011-07-14 |
Family
ID=43409495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010289996A Pending JP2011139062A (ja) | 2009-12-29 | 2010-12-27 | 発光素子、発光素子パッケージおよび照明システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US8008672B2 (ja) |
EP (1) | EP2341562A1 (ja) |
JP (1) | JP2011139062A (ja) |
KR (1) | KR100993074B1 (ja) |
CN (1) | CN102122699B (ja) |
TW (1) | TWI568034B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116978A1 (ko) * | 2018-12-06 | 2020-06-11 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW541710B (en) * | 2001-06-27 | 2003-07-11 | Epistar Corp | LED having transparent substrate and the manufacturing method thereof |
US20140021444A1 (en) * | 2010-05-31 | 2014-01-23 | Snu R&Db Foundation | Electronic device and manufacturing method thereof |
DE11158693T8 (de) | 2011-03-17 | 2013-04-25 | Valoya Oy | Pflanzenbeleuchtungsvorrichtung und Verfahren |
EP2499900A1 (en) * | 2011-03-17 | 2012-09-19 | Valoya Oy | Method and means for enhancing greenhouse lights |
TWM436224U (ja) * | 2011-10-28 | 2012-08-21 | Rgb Consulting Co Ltd | |
US8835965B2 (en) | 2012-01-18 | 2014-09-16 | The Penn State Research Foundation | Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes |
KR101232069B1 (ko) | 2012-03-21 | 2013-02-12 | 고려대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
CN103367584B (zh) * | 2012-03-30 | 2017-04-05 | 清华大学 | 发光二极管及光学元件 |
KR101309258B1 (ko) * | 2012-04-05 | 2013-09-17 | 영남대학교 산학협력단 | 발광 다이오드 및 그 제조 방법 |
CN103474549B (zh) * | 2012-06-07 | 2016-12-14 | 清华大学 | 半导体结构 |
WO2014007867A1 (en) * | 2012-07-02 | 2014-01-09 | The Regents Of The University Of California | Semi-transparent, transparent, stacked and top-illuminated organic photovoltaic devices |
CN103022287A (zh) * | 2012-11-15 | 2013-04-03 | 璨圆光电股份有限公司 | 多波长发光二极管芯片 |
DE102013112490A1 (de) * | 2013-11-13 | 2015-05-13 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge und Verfahren zu deren Herstellung |
TWI581452B (zh) * | 2014-10-24 | 2017-05-01 | Nat Chunghsing Univ | High light extraction rate of light-emitting diodes, conductive films, and conductive films The production method |
US10374127B2 (en) * | 2015-09-17 | 2019-08-06 | Nxp Usa, Inc. | Electronic devices with nanorings, and methods of manufacture thereof |
US10083920B1 (en) * | 2018-02-01 | 2018-09-25 | Google Llc | Package stiffener for protecting semiconductor die |
CN112086548A (zh) * | 2018-07-16 | 2020-12-15 | 厦门三安光电有限公司 | 微发光装置及其显示器 |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006083219A (ja) * | 2004-09-14 | 2006-03-30 | Sharp Corp | 蛍光体およびこれを用いた発光装置 |
JP2006261554A (ja) * | 2005-03-18 | 2006-09-28 | Kyocera Corp | 発光ダイオード装置 |
WO2009048425A1 (en) * | 2007-10-12 | 2009-04-16 | Agency For Science, Technology And Research | Fabrication of phosphor free red and white nitride-based leds |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5965095B2 (ja) | 1999-12-03 | 2016-08-10 | クリー インコーポレイテッドCree Inc. | 内部および外部光学要素による光取出しを向上させた発光ダイオード |
JP3872327B2 (ja) * | 2000-12-04 | 2007-01-24 | 日本碍子株式会社 | 半導体発光素子 |
JP2004083653A (ja) * | 2002-08-23 | 2004-03-18 | Sharp Corp | 発光装置ならびに蛍光体およびその製造方法 |
KR100507610B1 (ko) * | 2002-11-15 | 2005-08-10 | 광주과학기술원 | 질화물 반도체 나노상 광전소자 및 그 제조방법 |
JP2005072096A (ja) * | 2003-08-20 | 2005-03-17 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光ダイオード装置及びその製造方法 |
KR100601945B1 (ko) | 2004-03-10 | 2006-07-14 | 삼성전자주식회사 | 탑에미트형 질화물계 발광소자 및 그 제조방법 |
KR100634503B1 (ko) | 2004-03-12 | 2006-10-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7602116B2 (en) * | 2005-01-27 | 2009-10-13 | Advanced Optoelectronic Technology, Inc. | Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof |
CN101208810B (zh) * | 2005-03-24 | 2010-05-12 | 科技研究局 | Ⅲ族氮化物白光发光二极管 |
JP4778745B2 (ja) * | 2005-07-27 | 2011-09-21 | パナソニック株式会社 | 半導体発光装置及びその製造方法 |
KR100706796B1 (ko) | 2005-08-19 | 2007-04-12 | 삼성전자주식회사 | 질화물계 탑에미트형 발광소자 및 그 제조 방법 |
JP4749803B2 (ja) | 2005-08-26 | 2011-08-17 | 住友化学株式会社 | 半導体積層基板およびその製造方法 |
KR100779078B1 (ko) * | 2005-12-09 | 2007-11-27 | 한국전자통신연구원 | 빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법 |
KR100801617B1 (ko) | 2006-02-24 | 2008-02-11 | 서울옵토디바이스주식회사 | 광추출을 위한 나노구조체들을 갖는 발광 다이오드 및그것을 제조하는 방법 |
FR2898434B1 (fr) * | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | Diode electroluminescente blanche monolithique |
KR100703218B1 (ko) * | 2006-03-14 | 2007-04-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
JP2008179756A (ja) * | 2006-12-28 | 2008-08-07 | Showa Denko Kk | 発光素子封止用樹脂組成物およびランプ |
US20100110728A1 (en) * | 2007-03-19 | 2010-05-06 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
TWI481062B (zh) * | 2007-10-05 | 2015-04-11 | Delta Electronics Inc | 磊晶基板製造方法及發光二極體裝置及其製造方法 |
KR20090044790A (ko) | 2007-11-01 | 2009-05-07 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
JP5117422B2 (ja) * | 2008-07-15 | 2013-01-16 | 富士フイルム株式会社 | 発光装置及びその製造方法 |
KR20090009176A (ko) | 2008-12-17 | 2009-01-22 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
-
2009
- 2009-12-29 KR KR1020090132731A patent/KR100993074B1/ko active IP Right Grant
-
2010
- 2010-12-15 EP EP10195182A patent/EP2341562A1/en not_active Ceased
- 2010-12-20 TW TW099144697A patent/TWI568034B/zh active
- 2010-12-27 JP JP2010289996A patent/JP2011139062A/ja active Pending
- 2010-12-28 US US12/980,136 patent/US8008672B2/en not_active Expired - Fee Related
- 2010-12-29 CN CN2010106241501A patent/CN102122699B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006083219A (ja) * | 2004-09-14 | 2006-03-30 | Sharp Corp | 蛍光体およびこれを用いた発光装置 |
JP2006261554A (ja) * | 2005-03-18 | 2006-09-28 | Kyocera Corp | 発光ダイオード装置 |
WO2009048425A1 (en) * | 2007-10-12 | 2009-04-16 | Agency For Science, Technology And Research | Fabrication of phosphor free red and white nitride-based leds |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116978A1 (ko) * | 2018-12-06 | 2020-06-11 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN102122699B (zh) | 2013-07-24 |
KR100993074B1 (ko) | 2010-11-08 |
US20110156088A1 (en) | 2011-06-30 |
TWI568034B (zh) | 2017-01-21 |
US8008672B2 (en) | 2011-08-30 |
CN102122699A (zh) | 2011-07-13 |
TW201131824A (en) | 2011-09-16 |
EP2341562A1 (en) | 2011-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4903902B2 (ja) | 発光素子、発光素子の製造方法、及び発光素子パッケージ | |
JP5963798B2 (ja) | 発光素子パッケージ及び照明システム | |
US8008672B2 (en) | Light emitting device | |
KR101081062B1 (ko) | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
US8071973B2 (en) | Light emitting device having a lateral passivation layer | |
JP5416149B2 (ja) | 発光素子パッケージ及び照明システム | |
US20110175120A1 (en) | Light emitting device, light emitting device package and illumination system | |
US10374124B2 (en) | Light emitting device, method for manufacturing light emitting device and lighting system having same | |
JP5751696B2 (ja) | 発光素子、発光素子パッケージ、及び照明システム | |
US8928016B2 (en) | Light emitting device, light emitting device package, and light system | |
KR20120005756A (ko) | 발광소자 | |
US8809884B2 (en) | Light emitting device including an electrode on a textured surface, light emitting device package and lighting system | |
KR20110115384A (ko) | 발광 소자 및 그 제조방법, 발광 소자 패키지 및 조명 시스템 | |
JP2011146707A (ja) | 発光素子チップ、発光素子パッケージ | |
US8692278B2 (en) | Light emitting device | |
KR20130016945A (ko) | 발광소자 및 발광소자의 제조방법 | |
KR20120015882A (ko) | 발광소자 패키지 | |
KR20120001388A (ko) | 발광 소자 | |
KR20130011484A (ko) | 발광소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121030 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130430 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130730 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140124 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140307 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150217 |