JP5427482B2 - マイクロプロセッサ - Google Patents
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- JP5427482B2 JP5427482B2 JP2009143225A JP2009143225A JP5427482B2 JP 5427482 B2 JP5427482 B2 JP 5427482B2 JP 2009143225 A JP2009143225 A JP 2009143225A JP 2009143225 A JP2009143225 A JP 2009143225A JP 5427482 B2 JP5427482 B2 JP 5427482B2
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- 239000010408 film Substances 0.000 claims description 185
- 239000004065 semiconductor Substances 0.000 claims description 58
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 53
- 239000010409 thin film Substances 0.000 claims description 44
- 239000010410 layer Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000004435 EPR spectroscopy Methods 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 67
- 238000000137 annealing Methods 0.000 description 46
- 239000004973 liquid crystal related substance Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 31
- 125000004429 atom Chemical group 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- 239000001257 hydrogen Substances 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000001603 reducing effect Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000000089 atomic force micrograph Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000005620 antiferroelectricity Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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Description
を活性層としたTFTが検討されている。
成膜には、減圧CVD法を用い、成膜ガスとして、ジシラン(Si2H6)(流量250sccm)、ヘリウム(He)(流量300sccm)とした。基板温度465℃、成膜時の圧力は0.5torrとした。
の1/2の値を示す。
本発明では高温アニール前のBearing Ratioは実験結果よりも大きくなると考えられ、高温アニール後のBearing Ratioは29〜72%、代表的には35〜60%の範囲にあると予測される。
なお、この紫外光又は赤外光を照射する工程は省略しても構わない。(図1(B))
従って、公知のあらゆる構造のTFTに対して適用可能である。また、結晶性珪素膜104を形成した以降の工程における数値条件も本実施例に限定される必要はない。さらには、公知のチャネルドープ工程(しきい値電圧を制御するための不純物添加工程)を本実施例のどこかに導入してもなんら問題はない。
即ち、ある結晶面内に含まれる特定の軸(軸Aと呼ぶ)と、隣接する他の結晶面内に含まれる軸Aと等価な軸(軸Bと呼ぶ)とがなす角を回転角と呼ぶと、その回転角に相当する分だけ回折スポットの現れる位置がずれるのである。
即ち、結晶粒界でありながらキャリアの移動を阻害するトラップとして機能しないため、実質的に存在しないと見なすことができる。
204は窒化珪素膜/酸化珪素膜/樹脂膜の積層膜でなる絶縁層、その上にはチタン配線205が設けられ、前述のCMOS回路とTFT202とが電気的に接続されている。チタン配線はさらに樹脂膜でなる絶縁層206で覆われている。
二つの絶縁層204、206は平坦化膜としての機能も有している。
即ち、現在市場に流通している全ての半導体回路に適用できる。例えば、ワンチップ上に集積化されたRISCプロセッサ、ASICプロセッサ等のマイクロプロセッサに適用しても良いし、D/Aコンバータ等の信号処理回路から携帯機器(携帯電話、PHS、モバイルコンピュータ)用の高周波回路に適用しても良い。
なお、基本的な回路はCMOS回路を最小単位として構成することで消費電力を抑えることができる。
Claims (5)
- シリコン基板と、
前記シリコン基板上に形成された酸化珪素膜からなる絶縁膜と、
前記絶縁膜上に形成されたnチャネル型の薄膜トランジスタとpチャネル型の薄膜トランジスタとからなるCMOS回路とを有するマイクロプロセッサであって、
前記nチャネル型の薄膜トランジスタは、
前記絶縁膜上に形成された第1の島状の結晶性珪素膜と、
前記第1の島状の結晶性珪素膜上に形成された第1のゲート絶縁膜と、
前記第1のゲート絶縁膜上に形成された導電性を有する多結晶珪素膜からなる第1のゲート配線と、
前記第1のゲート配線の少なくとも側面に形成された第1の酸化珪素膜と、
前記第1の酸化珪素膜の側面に形成された窒化珪素膜からなる第1のサイドウォールと、
前記第1のゲート配線と重なる前記第1の島状の結晶性珪素膜中に形成された第1のチャネル形成領域と、
前記第1のサイドウォールと重なる前記第1の島状の結晶性珪素膜中に前記第1のチャネル形成領域を挟んで形成された第1のLDD領域と、
前記第1のサイドウォールと重ならない前記第1の島状の結晶性珪素膜中に前記第1のLDD領域を挟んで形成された第1のソース領域および第1のドレイン領域と、
前記第1のゲート配線並びに前記第1のソース領域および前記第1のドレイン領域に形成された第1のシリサイド層と、を有し、
前記pチャネル型の薄膜トランジスタは、
前記絶縁膜上に形成された第2の島状の結晶性珪素膜と、
前記第2の島状の結晶性珪素膜上に形成された第2のゲート絶縁膜と、
前記第2のゲート絶縁膜上に形成された導電性を有する多結晶珪素膜からなる第2のゲート配線と、
前記第2のゲート配線の少なくとも側面に形成された第2の酸化珪素膜と、
前記第2の酸化珪素膜の側面に形成された窒化珪素膜からなる第2のサイドウォールと、
前記第2のゲート配線と重なる前記第2の島状の結晶性珪素膜中に形成された第2のチャネル形成領域と、
前記第2のサイドウォールと重なる前記第2の島状の結晶性珪素膜中に前記第2のチャネル形成領域を挟んで形成された第2のLDD領域と、
前記第2のサイドウォールと重ならない前記第2の島状の結晶性珪素膜中に前記第2のLDD領域を挟んで形成された第2のソース領域および第2のドレイン領域と、
前記第2のゲート配線並びに前記第2のソース領域および前記第2のドレイン領域に形成された第2のシリサイド層と、を有し、
前記nチャネル型の薄膜トランジスタおよび前記pチャネル型の薄膜トランジスタは窒化珪素膜からなる層間絶縁膜によって覆われ、
前記層間絶縁膜は、前記第1のシリサイド層および第2のシリサイド層、前記第1のサイドウォールおよび前記第2のサイドウォールと接し、
前記第1のチャネル形成領域および前記第2のチャネル形成領域における、
炭素の濃度が、5×1018atoms/cm3以下であり、
且つ窒素の濃度が、5×1018atoms/cm3以下であり、
且つ酸素の濃度が、1.5×1019atoms/cm3以下であり、
前記第1の島状の結晶性珪素膜及び前記第2の島状の結晶性珪素膜は、多結晶半導体膜であり、
前記多結晶半導体膜は、高さが最大値から最大値と最小値の差分の1/2を示す領域の占める割合が、29〜72%である表面形状を有することを特徴とするマイクロプロセッサ。 - 請求項1において、
前記第1のチャネル形成領域および前記第2のチャネル形成領域における、
金属の濃度が、1×1017atoms/cm3以下であることを特徴とするマイクロプロセッサ。 - 請求項1または2において、
前記第1のチャネル形成領域および前記第2のチャネル形成領域における、
電子スピン共鳴分析によるスピン密度が、5×1017spins/cm3以下であることを特徴とするマイクロプロセッサ。 - 請求項1乃至3のいずれか一において、
前記第1の島状の結晶性珪素膜および前記第2の島状の結晶性珪素膜の主たる配向面が{110}であることを特徴とするマイクロプロセッサ。 - 請求項1乃至4のいずれか一において、
前記マイクロプロセッサは、CPUコア、RAM、クロックコントローラ、キャッシュメモリ、キャッシュコントローラ、シリアルインターフェース、I/Oポートを有するマイクロプロセッサであることを特徴とするマイクロプロセッサ。
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