CN103745916B - 定义多晶硅生长方向的方法 - Google Patents

定义多晶硅生长方向的方法 Download PDF

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CN103745916B
CN103745916B CN201310747070.9A CN201310747070A CN103745916B CN 103745916 B CN103745916 B CN 103745916B CN 201310747070 A CN201310747070 A CN 201310747070A CN 103745916 B CN103745916 B CN 103745916B
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polycrystalline silicon
growth direction
amorphous silicon
silicon
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CN103745916A (zh
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余威
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明涉及定义多晶硅生长方向的方法。该定义多晶硅生长方向的方法包括：步骤1、在基板上形成缓冲层；步骤2、在该缓冲层上形成非晶硅薄膜；步骤3、使该非晶硅薄膜表面形成规律的非晶硅凸起部；步骤4、经由准分子镭射退火使该非晶硅薄膜形成多晶硅。本发明定义多晶硅生长方向的方法能够控制多晶硅形成时的生长方向，进而可以提高多晶硅晶粒大小。

Description

定义多晶硅生长方向的方法
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种定义多晶硅生长方向的方法。
背景技术
随着平板显示的发展，高分辨率，低能耗的面板需求不断被提出。不同于非晶硅电子迁移率低，低温多晶硅因可在低温下制作，具有高的电子迁移率及可制作C-MOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）电路而被广泛研究用以达到面板高分辨率，低能耗的需求。
低温多晶硅（Low Temperature Poly-Silicon，LTPS）是多晶硅技术的一个分支。对平板显示器来说，采用多晶硅液晶材料有许多优点，如薄膜电路可以做得更薄更小、功耗更低等。
在多晶硅技术发展的初期，为了将玻璃基板从非晶硅结构（a-Si）转变为多晶硅结构，就必须借助一道镭射退火（Laser Anneal）的高温氧化工序，此时玻璃基板的温度将超过摄氏1000度。与传统的高温多晶硅相比，低温多晶硅虽然也需要激光照射工序，但它采用的是准分子激光作为热源，激光经过透射系统后，会产生能量均匀分布的激光束并被投射于非晶硅结构的玻璃基板上，当非晶硅结构的玻璃基板吸收准分子激光的能量后，就会转变成为多晶硅结构。由于整个处理过程是在摄氏500-600度以下完成，普通的玻璃基板也可承受，这就大大降低了制造成本。而除了制造成本降低外，低温多晶硅技术的优点还体现在：电子迁移速率更快；薄膜电路面积更小；更高的分辨率；结构简单、稳定性更高。
目前制作低温多晶硅的方法包括固相结晶（SPC），金属诱导结晶（MIC）和准分子镭射退火（ELA）几种，其中准分子镭射退火（ELA）是目前使用最为广泛的方法。
ELA制作低温多晶硅的方法是在玻璃上生长一缓冲层，然后生长非晶硅，高温去氢后经过HF预清洗，再利用ELA的镭射扫描非晶硅，非晶硅受到高温熔化重结晶形成多晶硅。
低温多晶硅晶粒的大小（Grain size）对多晶硅的电学性能有重要影响，在ELA制程中，非晶硅受到高温后变成完全熔融（nearly completely melts）状态，然后重结晶形成多晶硅。重结晶时会按照低能量向高能量方向结晶，低温向高温方向结晶；所以结晶的起点和方向是凌乱的，导致晶粒偏小，晶粒间晶界（Grain boundary）偏多，就会影响多晶硅的电子迁移率。
发明内容
因此，本发明的目的在于提供一种定义多晶硅生长方向的方法，能够控制多晶硅形成时的生长方向。
为实现上述目的，本发明提供了一种定义多晶硅生长方向的方法，其包括：
步骤1、在基板上形成缓冲层；
步骤2、在该缓冲层上形成非晶硅薄膜；
步骤3、使该非晶硅薄膜表面形成规律的非晶硅凸起部；
步骤4、经由准分子镭射退火使该非晶硅薄膜形成多晶硅。
其中，该步骤3包括：
步骤3.1、根据欲形成的非晶硅凸起部光刻该非晶硅薄膜；
步骤3.2、干法蚀刻该非晶硅薄膜；
步骤3.3、剥离光阻。
其中，该步骤4中进行准分子镭射退火前，对该非晶硅薄膜进行高温去氢和HF预清洗处理。
其中，该缓冲层的材料为氮化硅或二氧化硅。
其中，该基板为玻璃。
其中，根据所欲定义的该步骤4中所形成的多晶硅的生长方向来预先设置所述非晶硅凸起部在该非晶硅薄膜表面的分布。
其中，该缓冲层和非晶硅薄膜分别经由化学气相沉积法形成。
其中，在该基板和该缓冲层之间还形成有绝缘层。
其中，该绝缘层的材料为氮化铝，氮化硼，氧化铝或氧化镁。
其中，该绝缘层通过磁控溅射或化学气相沉积法形成。
本发明定义多晶硅生长方向的方法能够控制多晶硅形成时的生长方向，进而可以提高多晶硅晶粒大小。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明定义多晶硅生长方向的方法的流程图；
图2为按照本发明定义多晶硅生长方向的方法形成非晶硅薄膜的截面图；
图3为按照本发明定义多晶硅生长方向的方法刻蚀后的非晶硅薄膜截面图；
图4为按照本发明定义多晶硅生长方向的方法进行准分子镭射退火制程时非晶硅薄膜的截面图；
图5为按照本发明定义多晶硅生长方向的方法在非晶硅薄膜中籽晶控制多晶硅生长方向的截面图。
具体实施方式
参见图1，其为本发明定义多晶硅生长方向的方法的流程图。结合图2至图5所示的按照本发明定义多晶硅生长方向的方法生长多晶硅的一较佳实施例，本发明的定义多晶硅生长方向的方法主要包括：
步骤1、在基板10上形成缓冲层20；该基板10可以为玻璃或者其它适合的透明材料。
步骤2、在该缓冲层20上形成非晶硅薄膜30；该缓冲层20的材料可以为氮化硅或二氧化硅，或者其它适合的材料。
参见图2，其为按照本发明定义多晶硅生长方向的方法形成非晶硅薄膜的截面图，基板10上生长一缓冲层20，然后再生长非晶硅薄膜30，该缓冲层20和非晶硅薄膜30可以分别经由化学气相沉积法形成，也可以通过其它适合的制程来制作。
步骤3、使该非晶硅薄膜30表面形成规律的非晶硅凸起部40。该步骤3可以包括：
步骤3.1、根据欲形成的非晶硅凸起部40光刻（photo）该非晶硅薄膜30；
步骤3.2、干法蚀刻（dry etching）该非晶硅薄膜30；
步骤3.3、剥离（stripper）光阻。
参见图3，其为按照本发明定义多晶硅生长方向的方法刻蚀后的非晶硅薄膜截面图。通过一次光刻（photo）+干法蚀刻（dry etching）+剥离（stripper）的制程在非晶硅薄膜30上形成多个规律的凸起部40，也就是通过干法刻蚀工艺刻蚀掉一部分非晶硅薄膜30，则凸起部40即形成。
具体方式可为，在非晶硅薄膜30上覆一层感光材料，该层即所谓的光致抗蚀剂层，然后使光线通过掩膜照射于光致抗蚀剂层上使其曝光。由于掩膜上具有对应于非晶硅凸起部40的图案，使得部分光线得以穿过掩膜而照射于光致抗蚀剂层上，使得光致抗蚀剂层的曝光具有选择性，借此将掩膜上的图案复印纸光致抗蚀剂层上。然后，利用合适的显影液除去部分光致抗蚀剂，使得光致抗蚀剂层显现所需要的图案。接着通过干法蚀刻将部分非晶硅薄膜30去除。最后，将剩余的图案化的光致抗蚀剂层全部去除。
步骤4、经由准分子镭射退火使该非晶硅薄膜30形成多晶硅。该步骤4中进行准分子镭射退火前，可以对该非晶硅薄膜30进行高温去氢和HF预清洗处理。
参见图4及图5，图4为按照本发明定义多晶硅生长方向的方法进行准分子镭射退火制程时非晶硅薄的截面图，图5为在非晶硅薄膜中籽晶控制多晶硅生长方向的截面图。利用激光扫描进行准分子镭射退火的过程中，非晶硅薄膜30受到高温，薄区的非晶硅薄膜30变成完全熔融（nearly completely melts）状态，非晶硅凸起部40因厚度偏厚，所以处于部分熔融状态，能量偏低，非晶硅凸起部40未熔融的非晶硅则会如图5所示作为多晶硅生长的籽晶控制多晶硅向四周生长形成，从而实现控制多晶硅生长方向的目的，进而可以提高多晶硅晶粒大小。
本发明通过在非晶硅薄膜30中形成籽晶，则多晶硅形成时即会以籽晶为起点开始生长变大，从而可控制多晶硅形成时的生长方向，进而可以提高多晶硅晶粒大小。生长多晶硅前，可以根据所欲定义的所形成的多晶硅的生长方向来预先设置非晶硅凸起部40在该非晶硅薄膜30表面的分布，例如，非晶硅凸起部40可以设置为以相同的形状在非晶硅薄膜30表面均匀分布。换句话说，可以通过改变非晶硅凸起部40的形状和位置等条件来改变多晶硅形成时的生长方向。
而且，在该基板10和该缓冲层20之间还可以形成有绝缘层。该绝缘层的材料可以为氮化铝，氮化硼，氧化铝或氧化镁，或者其它适合的材料。该绝缘层可以通过磁控溅射或化学气相沉积法或其它适合的制程形成。进而，本发明的定义多晶硅生长方向的方法可以应用于薄膜晶体管，阵列基板，平板显示装置等的制备。
综上所述，本发明定义多晶硅生长方向的方法能够控制多晶硅形成时的生长方向，进而可以提高多晶硅晶粒大小。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (8)

1.一种定义多晶硅生长方向的方法，其特征在于，包括：
步骤1、在基板上形成缓冲层；
步骤2、在该缓冲层上形成非晶硅薄膜；
步骤3、使该非晶硅薄膜表面形成多个规律的非晶硅凸起部；
步骤4、经由准分子镭射退火使该非晶硅薄膜形成多晶硅；
利用激光扫描进行准分子镭射退火的过程中，非晶硅薄膜受到高温，薄区的非晶硅薄膜变成完全熔融状态，非晶硅凸起部因厚度偏厚，所以处于部分熔融状态，能量偏低，非晶硅凸起部未熔融的非晶硅则作为多晶硅生长的籽晶控制多晶硅向四周生长；
该步骤3包括：
步骤3.1、根据欲形成的非晶硅凸起部光刻该非晶硅薄膜；
步骤3.2、干法蚀刻该非晶硅薄膜；
步骤3.3、剥离光阻；
根据所欲定义的该步骤4中所形成的多晶硅的生长方向来预先设置所述非晶硅凸起部在该非晶硅薄膜表面的分布，通过改变非晶硅凸起部的形状和位置条件来改变多晶硅形成时的生长方向。
2.如权利要求1所述的定义多晶硅生长方向的方法，其特征在于，该步骤4中进行准分子镭射退火前，对该非晶硅薄膜进行高温去氢和HF预清洗处理。
3.如权利要求1所述的定义多晶硅生长方向的方法，其特征在于，该缓冲层的材料为氮化硅或二氧化硅。
4.如权利要求1所述的定义多晶硅生长方向的方法，其特征在于，该基板为玻璃。
5.如权利要求1所述的定义多晶硅生长方向的方法，其特征在于，该缓冲层和非晶硅薄膜分别经由化学气相沉积法形成。
6.如权利要求1所述的定义多晶硅生长方向的方法，其特征在于，在该基板和该缓冲层之间还形成有绝缘层。
7.如权利要求6所述的定义多晶硅生长方向的方法，其特征在于，该绝缘层的材料为氮化铝，氮化硼，氧化铝或氧化镁。
8.如权利要求6所述的定义多晶硅生长方向的方法，其特征在于，该绝缘层通过磁控溅射或化学气相沉积法形成。
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