JP5422914B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP5422914B2
JP5422914B2 JP2008125189A JP2008125189A JP5422914B2 JP 5422914 B2 JP5422914 B2 JP 5422914B2 JP 2008125189 A JP2008125189 A JP 2008125189A JP 2008125189 A JP2008125189 A JP 2008125189A JP 5422914 B2 JP5422914 B2 JP 5422914B2
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Japan
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chip microlens
opening
chip
imaging device
state imaging
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Expired - Fee Related
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JP2008125189A
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Japanese (ja)
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JP2009277732A5 (enExample
JP2009277732A (ja
Inventor
健太郎 秋山
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Sony Corp
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Sony Corp
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Priority to JP2008125189A priority Critical patent/JP5422914B2/ja
Priority to TW098112380A priority patent/TWI409969B/zh
Priority to EP09005639A priority patent/EP2120264B1/en
Priority to CN2009101373395A priority patent/CN101582393B/zh
Priority to KR1020090037075A priority patent/KR20090117982A/ko
Priority to US12/463,791 priority patent/US8076172B2/en
Publication of JP2009277732A publication Critical patent/JP2009277732A/ja
Publication of JP2009277732A5 publication Critical patent/JP2009277732A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008125189A 2008-05-12 2008-05-12 固体撮像装置の製造方法 Expired - Fee Related JP5422914B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008125189A JP5422914B2 (ja) 2008-05-12 2008-05-12 固体撮像装置の製造方法
TW098112380A TWI409969B (zh) 2008-05-12 2009-04-14 製造固態成像器件之方法及製造電子裝置之方法
EP09005639A EP2120264B1 (en) 2008-05-12 2009-04-22 Method of manufacturing solid-state imaging device and method of manufacturing electronic apparatus
CN2009101373395A CN101582393B (zh) 2008-05-12 2009-04-24 固体摄像器件制造方法和电子装置制造方法
KR1020090037075A KR20090117982A (ko) 2008-05-12 2009-04-28 고체 촬상 장치의 제조 방법 및 전자 기기의 제조 방법
US12/463,791 US8076172B2 (en) 2008-05-12 2009-05-11 Method of manufacturing solid-state imaging device and method of manufacturing electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008125189A JP5422914B2 (ja) 2008-05-12 2008-05-12 固体撮像装置の製造方法

Publications (3)

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JP2009277732A JP2009277732A (ja) 2009-11-26
JP2009277732A5 JP2009277732A5 (enExample) 2011-06-30
JP5422914B2 true JP5422914B2 (ja) 2014-02-19

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JP2008125189A Expired - Fee Related JP5422914B2 (ja) 2008-05-12 2008-05-12 固体撮像装置の製造方法

Country Status (6)

Country Link
US (1) US8076172B2 (enExample)
EP (1) EP2120264B1 (enExample)
JP (1) JP5422914B2 (enExample)
KR (1) KR20090117982A (enExample)
CN (1) CN101582393B (enExample)
TW (1) TWI409969B (enExample)

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TWI698990B (zh) * 2015-10-28 2020-07-11 台灣積體電路製造股份有限公司 互補式金屬氧化物半導體影像感測器結構及其製造方法

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JP5663925B2 (ja) 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
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Also Published As

Publication number Publication date
JP2009277732A (ja) 2009-11-26
CN101582393A (zh) 2009-11-18
TWI409969B (zh) 2013-09-21
EP2120264A2 (en) 2009-11-18
US20090280596A1 (en) 2009-11-12
EP2120264A3 (en) 2012-02-22
KR20090117982A (ko) 2009-11-17
CN101582393B (zh) 2012-10-17
US8076172B2 (en) 2011-12-13
TW201001739A (en) 2010-01-01
EP2120264B1 (en) 2013-01-30

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