DE112014006650A5 - Entspiegelung der Rückseite eines Halbleiterwafers - Google Patents

Entspiegelung der Rückseite eines Halbleiterwafers Download PDF

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Publication number
DE112014006650A5
DE112014006650A5 DE112014006650.8T DE112014006650T DE112014006650A5 DE 112014006650 A5 DE112014006650 A5 DE 112014006650A5 DE 112014006650 T DE112014006650 T DE 112014006650T DE 112014006650 A5 DE112014006650 A5 DE 112014006650A5
Authority
DE
Germany
Prior art keywords
reflection
semiconductor wafer
wafer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014006650.8T
Other languages
English (en)
Inventor
Daniel Gäbler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of DE112014006650A5 publication Critical patent/DE112014006650A5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE112014006650.8T 2014-08-08 2014-08-08 Entspiegelung der Rückseite eines Halbleiterwafers Withdrawn DE112014006650A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2014/063804 WO2016020729A1 (de) 2014-08-08 2014-08-08 Entspiegelung der rueckseite eines halbleiterwafers

Publications (1)

Publication Number Publication Date
DE112014006650A5 true DE112014006650A5 (de) 2017-01-26

Family

ID=51539306

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014006650.8T Withdrawn DE112014006650A5 (de) 2014-08-08 2014-08-08 Entspiegelung der Rückseite eines Halbleiterwafers

Country Status (3)

Country Link
US (1) US20170271397A1 (de)
DE (1) DE112014006650A5 (de)
WO (1) WO2016020729A1 (de)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724794B2 (en) * 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
US6710376B2 (en) * 2001-09-04 2004-03-23 Eugene Robert Worley Opto-coupler based on integrated forward biased silicon diode LED
WO2004021452A2 (de) 2002-08-29 2004-03-11 X-Fab Semiconductor Foundries Ag Integrierte fotoempfindliche strukturen und passivierungsverfahren
JP2004134672A (ja) * 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP5422914B2 (ja) * 2008-05-12 2014-02-19 ソニー株式会社 固体撮像装置の製造方法
US8207590B2 (en) * 2008-07-03 2012-06-26 Samsung Electronics Co., Ltd. Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
US20100108893A1 (en) * 2008-11-04 2010-05-06 Array Optronix, Inc. Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports
WO2011039568A1 (de) 2009-09-30 2011-04-07 X-Fab Semiconductor Foundries Ag Halbleiterbauelement mit fensteroeffnung als schnittstelle zur umgebungs-ankopplung
US8377733B2 (en) 2010-08-13 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Antireflective layer for backside illuminated image sensor and method of manufacturing same
FR2976119A1 (fr) * 2011-06-06 2012-12-07 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif d'imagerie a illumination face arriere, et dispositif correspondant
US8502389B2 (en) * 2011-08-08 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor and method for forming the same
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels

Also Published As

Publication number Publication date
WO2016020729A1 (de) 2016-02-11
US20170271397A1 (en) 2017-09-21

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee